公开(公告)号：US11776846B2

公开(公告)日：2023-10-03

申请号：US17157467

申请日：2021-01-25

Applicant: ASM IP Holding B.V.

Inventor： Timothee Blanquart

IPC: H01L21/02 ,  H01L21/768 ,  H01J37/32 ,  C23C16/34 ,  C23C16/455 ,  C23C16/52

CPC classification number: H01L21/76837 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/52 ,  H01J37/32449 ,  H01J37/32834 ,  H01J37/32899 ,  H01L21/0234 ,  H01L21/02211 ,  H01L21/02274 ,  H01J2237/332

Abstract: Methods and systems for manufacturing a structure comprising a substrate. The substrate comprises plurality of recesses and a plurality of lateral spaces. The recesses and lateral spaces are at least partially filled with a gap filling fluid.

公开(公告)号：US20230143678A1

公开(公告)日：2023-05-11

申请号：US17966660

申请日：2022-10-14

Applicant: ASM IP Holding B.V.

Inventor： René Henricus Jozef Vervuurt ,  Timothee Blanquart

IPC: C23C16/455 ,  C23C16/34

CPC classification number: C23C16/45553 ,  C23C16/342 ,  C23C16/45536

Abstract: Methods and systems for depositing a boron nitride film on a substrate are disclosed. More particularly, the disclosure relates to methods and systems that can be used for depositing a boron nitride film by a pulsed CVD process.

公开(公告)号：US20230098689A1

公开(公告)日：2023-03-30

申请号：US17818081

申请日：2022-08-08

Applicant: ASM IP Holding, B.V.

Inventor： Charles Dezelah ,  Timothee Blanquart

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/455 ,  C23C16/56

Abstract: A method of forming high quality a-BN layers. The method includes use of a precursor chemistry that is particularly suited for use in a cyclical deposition process such as in chemical vapor deposition (CVD), atomic layer deposition (ALD), and the like. In brief, new methods are described of forming boron nitride (BN) layers from precursors capable of growing amorphous BN (a-BN) films by CVD, ALD, or the like. In some cases, the precursor is or includes a borane adduct of hydrazine or a hydrazine derivative.

公开(公告)号：US11572620B2

公开(公告)日：2023-02-07

申请号：US16673860

申请日：2019-11-04

Applicant: ASM IP Holding B.V.

Inventor： Timothee Blanquart

IPC: C23C16/02 ,  C23C16/24 ,  C23C16/455

Abstract: A method for selectively depositing an amorphous silicon film on a substrate comprising a metallic nitride surface and a metallic oxide surface is disclosed. The method may include; providing a substrate within a reaction chamber, heating the substrate to a deposition temperature, contacting the substrate with silicon iodide precursor, and selectively depositing the amorphous silicon film on the metallic nitride surface relative to the metallic oxide surface. Semiconductor device structures including an amorphous silicon film deposited by selective deposition methods are also disclosed.

公开(公告)号：US20220319855A1

公开(公告)日：2022-10-06

申请号：US17708189

申请日：2022-03-30

Applicant: ASM IP Holding, B.V.

Inventor： Timothee Blanquart

IPC: H01L21/285 ,  H01J37/32

Abstract: Methods and related systems for filling a gap feature comprised in a substrate are disclosed. The methods comprise a step of providing a substrate comprising one or more gap features into a reaction chamber. The one or more gap features comprise a proximal part comprising a proximal surface and a distal part comprising a distal surface. The methods further comprise a step of subjecting the substrate to a plasma treatment. Thus the proximal surface is inhibited while leaving the distal surface substantially unaffected. Then, the methods comprise a step of selectively depositing a metal- and nitrogen-containing material on the distal surface.

公开(公告)号：US20220319834A1

公开(公告)日：2022-10-06

申请号：US17708299

申请日：2022-03-30

Applicant: ASM IP Holding, B.V.

Inventor： René Henricus Jozef Vervuurt ,  Timothee Blanquart ,  Viljami Pore ,  Yu Xu

IPC: H01L21/02 ,  H01L21/768 ,  H01J37/32 ,  C23C16/50 ,  C23C16/40 ,  C23C16/52 ,  C23C16/455

Abstract: Disclosed are methods and systems for filling a gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

公开(公告)号：US20220285211A1

公开(公告)日：2022-09-08

申请号：US17680711

申请日：2022-02-25

Applicant: ASM IP Holding B.V.

Inventor： Elina Färm ,  Shinya Iwashita ,  Charles Dezelah ,  Jan Willem Maes ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Viljami Pore ,  Giuseppe Alessio Verni ,  Qi Xie ,  Ren-Jie Chang ,  Eric James Shero

IPC: H01L21/768 ,  H01L21/02 ,  C23C16/455

Abstract: Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises at least partially filling the gap with a gap filling fluid. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

公开(公告)号：US20220119944A1

公开(公告)日：2022-04-21

申请号：US17451299

申请日：2021-10-18

Applicant: ASM IP HOLDING B.V.

Inventor： Shinya Yoshimoto ,  Takahiro Onuma ,  Makoto Igarashi ,  Yukihiro Mori ,  Hideaki Fukuda ,  Rene Henricus Jozef Vervuurt ,  Timothee Blanquart

IPC: C23C16/455 ,  C23C16/46 ,  C23C16/52

Abstract: In accordance with some embodiments herein, methods and apparatuses for flowable deposition of thin films are described. Some embodiments herein relate to cyclical processes for gap-fill in which deposition is followed by a thermal anneal and repeated. In some embodiments, the deposition and thermal anneal are carried out in separate station. In some embodiments second module is heated to a higher temperature than the first station. In some embodiments, the thermal anneal comprises RTA.

公开(公告)号：US11251035B2

公开(公告)日：2022-02-15

申请号：US17024092

申请日：2020-09-17

Applicant: ASM IP Holding B.V.

Inventor： Timothee Blanquart ,  David de Roest

IPC: H01L21/02 ,  H01L21/033

Abstract: The invention relates to a method of providing a structure by depositing a layer on a substrate in a reactor. The method comprising: introducing a silicon halide precursor in the reactor; introducing a reactant gas comprising oxygen in the reactor; and, providing an energy source to create a plasma from the reactant gas so that the oxygen reacts with the first precursor in a layer comprising silicon dioxide.

公开(公告)号：US20190318923A1

公开(公告)日：2019-10-17

申请号：US16280964

申请日：2019-02-20

Applicant: ASM IP Holding B.V.

Inventor： Timothee Blanquart ,  David de Roest

IPC: H01L21/02 ,  H01L21/033

Abstract: The invention relates to a method of providing a structure by depositing a layer on a substrate in a reactor. The method comprising: introducing a silicon halide precursor in the reactor; introducing a reactant gas comprising oxygen in the reactor; and, providing an energy source to create a plasma from the reactant gas so that the oxygen reacts with the first precursor in a layer comprising silicon dioxide.