公开(公告)号：US20200083375A1

公开(公告)日：2020-03-12

申请号：US16679885

申请日：2019-11-11

Applicant: ASM IP Holding B.V.

Inventor： John Tolle ,  Joe Margetis

IPC: H01L29/78 ,  H01L29/36 ,  H01L29/167 ,  H01L21/02 ,  H01L29/08 ,  H01L29/165

Abstract: A method for depositing a Group IV semiconductor on a surface of a substrate is disclosed. The method may include: providing a substrate within a reaction chamber and heating the substrate to a deposition temperature. The methods may further include: exposing the substrate to at least one Group IV precursor and exposing the substrate to at least one Group IIIA dopant precursor; wherein the at least one Group IIIA dopant precursor comprises a borohydride, an organic borohydride, a halide, or an organohalide. Semiconductor device structures including a Group IV semiconductor deposited by the methods of the disclosure are also provided.

公开(公告)号：US10541333B2

公开(公告)日：2020-01-21

申请号：US15985298

申请日：2018-05-21

Applicant: ASM IP Holding B.V.

Inventor： John Tolle ,  Joe Margetis

IPC: H01L29/78 ,  H01L21/02 ,  H01L29/167 ,  H01L29/36 ,  H01L29/45 ,  H01L29/66

Abstract: A method for depositing a Group IV semiconductor on a surface of a substrate is disclosed. The method may include: providing a substrate within a reaction chamber and heating the substrate to a deposition temperature. The methods may further include: exposing the substrate to at least one Group IV precursor and exposing the substrate to at least one Group IIIA dopant precursor; wherein the at least one Group IIIA dopant precursor comprises a borohydride, an organic borohydride, a halide, or an organohalide. Semiconductor device structures including a Group IV semiconductor deposited by the methods of the disclosure are also provided.

公开(公告)号：US20190027605A1

公开(公告)日：2019-01-24

申请号：US15985298

申请日：2018-05-21

Applicant: ASM IP Holding B.V.

Inventor： John Tolle ,  Joe Margetis

IPC: H01L29/78 ,  H01L21/02 ,  H01L29/36 ,  H01L29/167

Abstract: A method for depositing a Group IV semiconductor on a surface of a substrate is disclosed. The method may include: providing a substrate within a reaction chamber and heating the substrate to a deposition temperature. The methods may further include: exposing the substrate to at least one Group IV precursor and exposing the substrate to at least one Group IIIA dopant precursor; wherein the at least one Group IIIA dopant precursor comprises a borohydride, an organic borohydride, a halide, or an organohalide. Semiconductor device structures including a Group IV semiconductor deposited by the methods of the disclosure are also provided.

公开(公告)号：US20180151358A1

公开(公告)日：2018-05-31

申请号：US15863340

申请日：2018-01-05

Applicant: ASM IP Holding B.V.

Inventor： Joe Margetis ,  John Tolle ,  Gregory Bartlett ,  Nupur Bhargava

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/24

CPC classification number: H01L21/02636 ,  C23C16/24 ,  C23C16/455 ,  C23C16/45514 ,  C23C16/45574 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

Abstract: A gas distribution system is disclosed in order to obtain better film uniformity on a substrate in a cross-flow reactor. The better film uniformity may be achieved by an asymmetric bias on individual injection ports of the gas distribution system. The gas distribution may allow for varied tunability of the film properties.

公开(公告)号：US09892913B2

公开(公告)日：2018-02-13

申请号：US15450199

申请日：2017-03-06

Applicant: ASM IP Holding B.V.

Inventor： Joe Margetis ,  John Tolle ,  Gregory Bartlett ,  Nupur Bhargava

IPC: H01L21/20 ,  H01L21/02 ,  C23C16/455

CPC classification number: H01L21/02636 ,  C23C16/24 ,  C23C16/455 ,  C23C16/45514 ,  C23C16/45574 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

Abstract: A gas distribution system is disclosed in order to obtain better film uniformity on a substrate in a cross-flow reactor. The better film uniformity may be achieved by an asymmetric bias on individual injection ports of the gas distribution system. The gas distribution may allow for varied tunability of the film properties.

公开(公告)号：US09647114B2

公开(公告)日：2017-05-09

申请号：US14827177

申请日：2015-08-14

Applicant: ASM IP Holding B.V.

Inventor： Joe Margetis ,  John Tolle

IPC: C23C16/00 ,  H01L29/78 ,  H01L21/02 ,  H01L29/161 ,  H01L29/167 ,  H01L29/08 ,  C23C16/455

CPC classification number: C23C16/455 ,  C23C16/0272 ,  C23C16/30 ,  C23C16/45512 ,  C30B25/02 ,  C30B29/52 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/167

Abstract: Methods of forming p-type doped germanium-tin layers, systems for forming the p-type doped germanium-tin layers, and structures including the p-type doped germanium-tin layers are disclosed. The p-type doped germanium-tin layers include an n-type dopant, which allows relatively high levels of tin and/or p-type dopant to be included into the p-type doped germanium-tin layers.