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    CPP sensors with hard bias structures that shunt sense current towards a shield
    32.
    发明授权
    CPP sensors with hard bias structures that shunt sense current towards a shield 有权
    具有硬偏压结构的CPP传感器将屏蔽层的感应电流分流

    公开(公告)号：US08335056B2

    公开(公告)日：2012-12-18

    申请号：US11957466

    申请日：2007-12-16

    申请人： Hamid Balamane ,  Jeffrey R. Childress ,  Robert E. Fontana, Jr. ,  Jordan A. Katine ,  Neil Smith

    发明人： Hamid Balamane ,  Jeffrey R. Childress ,  Robert E. Fontana, Jr. ,  Jordan A. Katine ,  Neil Smith

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3932 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3912 ,  G11B2005/3996

    摘要： Read sensors and associated methods of fabrication are disclosed. A read sensor as disclosed herein includes a first shield, a sensor stack including an antiparallel (AP) free layer, and insulating material disposed on the sensor stack. A aperture is formed through the insulating material above the sensor stack so that a subsequently deposited second shield is electrically coupled to the sensor stack through the aperture. The width of the aperture controls the current density that is injected into the top of the sensor stack. Also, hard bias structures may be formed to be electrically coupled to the sensor stack. The electrical coupling of the sensor stack and the hard bias structures allows current to laterally spread out as it passes through the sensor stack, and hence, provides a non-uniform current density.

    摘要翻译： 公开了传感器和相关的制造方法。 本文公开的读取传感器包括第一屏蔽层，包括反平行（AP）自由层的传感器堆叠以及设置在传感器堆叠上的绝缘材料。 通过传感器堆叠上方的绝缘材料形成孔，使得随后沉积的第二屏蔽件通过孔电耦合到传感器堆叠。 光圈的宽度控制注入到传感器叠层顶部的电流密度。 此外，可以形成硬偏置结构以电耦合到传感器堆叠。 传感器堆叠和硬偏置结构的电耦合允许电流在其通过传感器堆叠时横向展开，因此提供不均匀的电流密度。

    Method of manufacturing a magnetic sensor by multiple depositions of varying geometry
    34.
    发明授权
    Method of manufacturing a magnetic sensor by multiple depositions of varying geometry 有权
    通过不同几何形状的多次沉积制造磁性传感器的方法

    公开(公告)号：US07698807B2

    公开(公告)日：2010-04-20

    申请号：US11337020

    申请日：2006-01-20

    申请人： Jeffrey Robinson Childress ,  Robert E. Fontana, Jr. ,  Jeffrey S. Lille

    发明人： Jeffrey Robinson Childress ,  Robert E. Fontana, Jr. ,  Jeffrey S. Lille

    IPC分类号： G11B5/187

    CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932 ,  H01L43/08 ,  H01L43/12 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49048

    摘要： Formation of the magnetic sensor layers of a magnetic sensor are separated into at least two depositions to reduce the dimension of the sensor. The free layer portion of the sensor is deposited at a different process step than the pinned layer portion. The top of the free layer stack can be a tunnel barrier, the free layer, or part of the free layer. The free layer stack also may contain an in-stack bias layer. The longitudinal bias layer may be patterned in a separate processing step, which allows the stack containing the free layer to be effectively thinner and allow smaller track width dimensions.

    摘要翻译： 将磁传感器的磁传感器层的形成分成至少两个沉积物以减小传感器的尺寸。 传感器的自由层部分以与被钉扎层部分不同的工艺步骤沉积。 自由层堆叠的顶部可以是隧道势垒，自由层或自由层的一部分。 自由层堆叠还可以包含堆叠内偏压层。 纵向偏置层可以在单独的处理步骤中进行图案化，其允许包含自由层的堆叠被有效地更薄并且允许更小的轨道宽度尺寸。

    Three terminal magnetic sensor having an in-stack longitudinal biasing layer structure
    35.
    发明授权
    Three terminal magnetic sensor having an in-stack longitudinal biasing layer structure 失效
    具有叠层纵向偏置层结构的三端磁传感器

    公开(公告)号：US07639459B2

    公开(公告)日：2009-12-29

    申请号：US11032598

    申请日：2005-01-10

    申请人： Jeffrey R. Childress ,  Robert E. Fontana, Jr. ,  Jeffrey S. Lille

    发明人： Jeffrey R. Childress ,  Robert E. Fontana, Jr. ,  Jeffrey S. Lille

    IPC分类号： G11B5/33

    CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3932 ,  H01L29/66984 ,  H01L43/08

    摘要： In one illustrative example, a three terminal magnetic sensor (TTM) suitable for use in a magnetic head has a sensor stack structure which includes a base region, a collector region, and an emitter region. A first barrier layer separates the emitter region from the base region, and a second barrier layer separates the collector region from the base region. A plurality of terminals of the TTM include a base lead coupled to the base region, a collector lead coupled to the collector region, and an emitter lead coupled to the emitter region. Preferably, the base region consists of a free layer structure so as to have a relatively small thickness. A pinned layer structure is made part of the emitter region. An in-stack longitudinal biasing layer (LBL) structure is formed in stack with the sensor stack structure and has a magnetic moment that is parallel to a sensing plane of the TTM for magnetically biasing the free layer structure. The in-stack LBL structure is made part of the collector region which also includes a layer of semiconductor material. In one variation, the emitter region has the in-stack LBL structure and the collector region has the pinned layer structure. The TTM may comprise a spin valve transistor (SVT), a magnetic tunnel transistor (MTT), or a double junction structure.

    摘要翻译： 在一个说明性示例中，适用于磁头的三端磁传感器（TTM）具有包括基极区域，集电极区域和发射极区域的传感器堆叠结构。 第一阻挡层将发射极区域与基极区域分开，并且第二阻挡层将集电极区域与基极区域分离。 TTM的多个端子包括耦合到基极区域的基极引线，耦合到集电极区域的集电极引线和耦合到发射极区域的发射极引线。 优选地，基区由自由层结构组成，以便具有相对较小的厚度。 被钉扎层结构是发射极区域的一部分。 堆叠纵向偏置层（LBL）结构与传感器堆叠结构堆叠形成，并且具有平行于TTM的感测平面的磁矩，用于磁偏置自由层结构。 叠层LBL结构是集成区域的一部分，其还包括半导体材料层。 在一个变型中，发射极区域具有叠层LBL结构，并且集电极区域具有钉扎层结构。 TTM可以包括自旋阀晶体管（SVT），磁隧道晶体管（MTT）或双结结构。

    Three terminal magnetic sensing devices having base lead layers in-plane with collector substrate materials and methods of making the same
    36.
    发明授权
    Three terminal magnetic sensing devices having base lead layers in-plane with collector substrate materials and methods of making the same 失效
    具有与集电体基板材料在一起的基极引线层的三端子磁感测装置及其制造方法

    公开(公告)号：US07635599B2

    公开(公告)日：2009-12-22

    申请号：US11239178

    申请日：2005-09-29

    申请人： Robert E. Fontana, Jr. ,  Jui-Lung Li ,  Jeffrey S. Lille ,  Sergio Nicoletti

    发明人： Robert E. Fontana, Jr. ,  Jui-Lung Li ,  Jeffrey S. Lille ,  Sergio Nicoletti

    IPC分类号： H01L21/00

    CPC分类号： G11B5/398 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  H01L29/66984

    摘要： Three terminal magnetic sensing devices (TTMs) having base lead layers in-plane with collector substrate materials, and methods of making the same, are disclosed. In one illustrative example, a collector substrate having an elevated region and a recessed region adjacent the elevated region is provided. An insulator layer is formed in full-film over the collector substrate, and a base lead layer is formed in full-film over the insulator layer and in-plane with semiconductor materials of the elevated region. The insulator materials and the base lead materials that are formed over the elevated region are removed. A sensor stack structure having an emitter region and a base region is then formed over the elevated region such that part of the base region is formed over an end of the base lead layer. A base conductive via may be formed to contact base lead materials of the base lead layer at a suitable distance away from the sensor stack structure. Advantageously, the base conductive via formation may occur without causing damage to the sensor stack structure. Also, the base lead layer is formed in the recessed region of the collector substrate prior to the formation of the sensor stack structure such that the TTM may be entirely in-situ manufactured. Furthermore, the trackwidth of the TTM may be defined directly by the elevated region of the collector substrate. The TTM is suitable for incorporation into nanoscale devices which increase areal recording densities, therefore aiding the revolution in magnetic storage.

    摘要翻译： 公开了具有与集电器基板材料在一起的基极引线层的三端子磁感测装置（TTM）及其制造方法。 在一个说明性示例中，提供了具有升高区域和与升高区域相邻的凹陷区域的收集器基板。 在集电体基板上形成绝缘体层，并且在绝缘体层上形成基极引线层，并且与升高区域的半导体材料在同一平面内形成基极引线层。 去除在升高区域上形成的绝缘体材料和基底引线材料。 然后在升高的区域上形成具有发射极区域和基极区域的传感器堆叠结构，使得基极区域的一部分形成在基极引线层的一端上。 可以形成基底导电通孔，以在离传感器堆叠结构适当的距离处接触基底引线层的基底引线材料。 有利地，可以在不会对传感器堆叠结构造成损害的情况下发生基底导电通孔形成。 此外，在形成传感器堆叠结构之前，基极引线层形成在集电体基板的凹陷区域中，使得TTM可以完全原位制造。 此外，TTM的轨道宽度可以由收集器基板的升高区域直接定义。 TTM适合纳入纳米级器件，增加面积记录密度，从而有助于磁存储的革命。

    Magnetic head having thermally assisted write head with heater element, and protective sacrificial layer
    37.
    发明授权
    Magnetic head having thermally assisted write head with heater element, and protective sacrificial layer 失效
    磁头具有加热元件的热​​辅助写头和保护牺牲层

    公开(公告)号：US06999277B2

    公开(公告)日：2006-02-14

    申请号：US10631885

    申请日：2003-07-30

    申请人： Robert E. Fontana, Jr. ,  Jeffrey S. Lille

    发明人： Robert E. Fontana, Jr. ,  Jeffrey S. Lille

    IPC分类号： G11B5/147

    CPC分类号： G11B5/127 ,  Y10T29/49032 ,  Y10T29/49082 ,  Y10T29/49083

    摘要： A magnetic head including a media heating device. Following the fabrication of the heating device, a sacrificial layer of material is deposited to protect the heating device during subsequent process steps. Thereafter, write head components, such as write head induction coils and/or a P1 pole pedestal are fabricated above the heating device, and the sacrificial layer is substantially consumed in protecting the heating device during the aggressive etching and milling steps used to create those components. Further components, including a second magnetic pole are thereafter fabricated to complete the fabrication of the write head portion of the magnetic head. The sacrificial layer may be comprised of alumina, or a material such as NiFe that can act as a seed layer for a subsequent head components such as the P1 pole pedestal.

    摘要翻译： 包括介质加热装置的磁头。 在加热装置的制造之后，沉积牺牲层材料以在随后的工艺步骤中保护加热装置。 此后，在加热装置之上制造诸如写头感应线圈和/或P1极基座的写头部件，并且在用于产生这些部件的腐蚀性蚀刻和铣削步骤期间，牺牲层基本上被消耗以保护加热装置 。 此后，制造包括第二磁极的其它部件以完成磁头的写入头部的制造。 牺牲层可以由氧化铝或诸如NiFe的材料组成，其可以用作后续头部部件如P1极基座的种子层。

    Method for making a magnetoresistive read transducer
    40.
    发明授权
    Method for making a magnetoresistive read transducer 失效
    制造磁阻读取传感器的方法

    公开(公告)号：US4940511A

    公开(公告)日：1990-07-10

    申请号：US355239

    申请日：1989-05-22

    申请人： Robert E. Fontana, Jr. ,  James K. Howard ,  James H. Lee ,  Haralambos Lefakis

    发明人： Robert E. Fontana, Jr. ,  James K. Howard ,  James H. Lee ,  Haralambos Lefakis

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3903 ,  Y10T29/49044 ,  Y10T29/49046

    摘要： A magnetoresistive (MR) read transducer comprising a thin film MR layer formed of ferromagnetic material and a nonmagnetic thin film spacer layer in contact with the MR layer. The spacer layer comprises a material selected from the group consisting of nichrome and nichrome with chromium oxide. A thin film of soft magnetic material is deposited in contact with the spacer layer so that a transverse bias is produced in at least a part of the MR layer. A feature of the invention is that the resistivity of the spacer layer can be chosen by selecting the ratio of nichrome to chromium oxide in the spacer layer. In a specific embodiment the spacer layer extends over only the central region of the MR layer. In case the MR layer is a nickel based alloy, a wet chemical etching process using an etchant comprising an aqueous solution of ceric ammonium nitrate and acetic acid can be used to pattern the spacer layer.

    摘要翻译： 磁阻（MR）读取换能器包括由铁磁材料形成的薄膜MR层和与MR层接触的非磁性薄膜间隔层。 间隔层包括选自镍铬合金和镍铬合金与铬氧化物的材料。 沉积与间隔层接触的软磁性材料的薄膜，使得在MR层的至少一部分中产生横向偏压。 本发明的一个特征是间隔层的电阻率可以通过选择间隔层中的镍铬合金与氧化铬的比例来选择。 在具体实施例中，间隔层仅在MR层的中心区域上延伸。 在MR层是镍基合金的情况下，可以使用使用包含硝酸铈铵和乙酸的水溶液的蚀刻剂的湿化学蚀刻工艺来对间隔层进行图案化。