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1.发明授权Method of manufacturing a magnetic sensor by multiple depositions of varying geometry 有权通过不同几何形状的多次沉积制造磁性传感器的方法公开(公告)号：US07698807B2
公开(公告)日：2010-04-20
申请号：US11337020
申请日：2006-01-20
IPC分类号： G11B5/187
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3932 , H01L43/08 , H01L43/12 , Y10T29/49041 , Y10T29/49044 , Y10T29/49048
摘要： Formation of the magnetic sensor layers of a magnetic sensor are separated into at least two depositions to reduce the dimension of the sensor. The free layer portion of the sensor is deposited at a different process step than the pinned layer portion. The top of the free layer stack can be a tunnel barrier, the free layer, or part of the free layer. The free layer stack also may contain an in-stack bias layer. The longitudinal bias layer may be patterned in a separate processing step, which allows the stack containing the free layer to be effectively thinner and allow smaller track width dimensions.
摘要翻译： 将磁传感器的磁传感器层的形成分成至少两个沉积物以减小传感器的尺寸。 传感器的自由层部分以与被钉扎层部分不同的工艺步骤沉积。 自由层堆叠的顶部可以是隧道势垒，自由层或自由层的一部分。 自由层堆叠还可以包含堆叠内偏压层。 纵向偏置层可以在单独的处理步骤中进行图案化，其允许包含自由层的堆叠被有效地更薄并且允许更小的轨道宽度尺寸。
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2.发明授权Read sensor having an in-stack biasing structure and an AP coupled free layer structure for increased magnetic stability 失效具有堆叠偏压结构的读取传感器和用于提高磁稳定性的AP耦合自由层结构公开(公告)号：US07324313B2
公开(公告)日：2008-01-29
申请号：US10955681
申请日：2004-09-30
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/313 , G11B5/3903 , G11B5/3909 , G11B5/3932
摘要： Current-perpendicular-to-the-plane (CPP), current-in-to-the-plane (CIP), and tunnel valve type sensors are provided having an antiparallel (AP) coupled free layer structure, an in-stack biasing structure which stabilizes the AP coupled free layer structure and a nonmagnetic spacer layer formed between the in-stack biasing layer and the AP coupled free layer structure. The AP coupled free layer structure has a first AP coupled free layer adjacent to the nonmagnetic spacer layer, a second AP coupled free layer, and an antiparallel coupling (APC) layer formed between the first and the second AP coupled free layers. The net moment of the AP coupled free layer structure has an antiparallel edge magnetostatic coupling with the in-stack biasing structure. At the same time, the first AP coupled free layer has an antiparallel exchange coupling with the second AP coupled free layer. By forming the second AP coupled free layer with a thickness greater than a thickness of the first AP coupled free layer, the AP coupled free layer structure has a net magnetic moment in the direction of the second AP coupled free layer moment. The non-magnetic spacer layer is chosen so that first AP coupled free layer has a parallel interlayer (Neel or Orange-peel or positive exchange) coupling with the in-stack biasing structure, so that the interlayer coupling adds to the edge magnetostatic coupling to increase a stability of the AP coupled free layer structure.
摘要翻译： 提供了电流垂直于平面（CPP），电流平面（CIP）和隧道阀式传感器，其具有反平行（AP）耦合自由层结构，堆叠偏置结构 其稳定AP耦合的自由层结构和形成在堆叠间偏压层和AP耦合自由层结构之间的非磁性间隔层。 AP耦合自由层结构具有邻近非磁性间隔层的第一AP耦合自由层，第二AP耦合自由层以及形成在第一和第二AP耦合自由层之间的反并联耦合（APC）层。 AP耦合自由层结构的净矩具有与堆叠偏压结构的反平行边缘静磁耦合。 同时，第一AP耦合自由层与第二AP耦合自由层具有反平行交换耦合。 通过形成厚度大于第一AP耦合自由层的厚度的第二AP耦合自由层，AP耦合自由层结构在第二AP耦合自由层时刻的方向上具有净磁矩。 选择非磁性间隔层，使得第一AP耦合自由层具有与堆叠偏压结构耦合的平行中间层（Neel或橙色剥离或正交换），使得层间耦合增加了边缘静磁耦合 增加AP耦合自由层结构的稳定性。
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3.发明授权公开(公告)号：US07016167B2
公开(公告)日：2006-03-21
申请号：US10406779
申请日：2003-04-03
IPC分类号： G11B5/127
CPC分类号： H01F10/3268 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3906 , G11B5/3932 , G11B2005/0008 , G11B2005/3996 , H01F41/302 , H01F41/325 , H01L29/66984 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044
摘要： A method and structure for a spin valve transistor (SVT) comprises a magnetic field sensor, an insulating layer adjacent the magnetic field sensor, a bias layer adjacent the insulating layer, a non-magnetic layer adjacent the bias layer, and a ferromagnetic layer over the non-magnetic layer, wherein the insulating layer and the non-magnetic layer comprise antiferromagnetic materials. The magnetic field sensor comprises a base region, a collector region adjacent the base region, an emitter region adjacent the base region, and a barrier region located between the base region and the emitter region. The bias layer is between the insulating layer and the non-magnetic layer. The bias layer is magnetic and is at least three times the thickness of the magnetic materials in the base region.
摘要翻译： 自旋阀晶体管（SVT）的方法和结构包括磁场传感器，与磁场传感器相邻的绝缘层，与绝缘层相邻的偏置层，邻近偏置层的非磁性层，以及铁磁层 非磁性层，其中绝缘层和非磁性层包括反铁磁材料。 磁场传感器包括基极区域，邻近基极区域的集电极区域，邻近基极区域的发射极区域和位于基极区域和发射极区域之间的势垒区域。 偏置层位于绝缘层和非磁性层之间。 偏置层是磁性的，并且是基极区域中的磁性材料的厚度的至少三倍。
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4.发明授权CPP magnetoresistive sensors with in-stack longitudinal biasing and overlapping magnetic shield 失效CPP磁阻传感器具有堆叠纵向偏置和重叠磁屏蔽公开(公告)号：US06680832B2
公开(公告)日：2004-01-20
申请号：US09853352
申请日：2001-05-11
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/112 , G11B5/313 , G11B5/3909 , G11B5/3912 , G11B5/398 , G11B2005/3996
摘要： A current-perpendicular-to-the-plane (CPP) magnetoresistive sensor or read head has a magnetic shield geometry that covers the side walls of the sensor structure to prevent side reading caused by magnetic flux entering from adjacent data tracks. The shield geometry includes a bottom shield with a substantially planar surface and a specially shaped top shield. The top shield has substantially vertical portions generally parallel to the side walls of the sensor structure, a horizontal top portion over the trackwidth region of the sensor, and horizontal side portions formed over the portions of the bottom shield on either side of the sensor structure. The insulating gap material that separates the bottom and top shields is in contact with the horizontal portions of the bottom shield and the side walls of the sensor structure.
摘要翻译： 电流垂直平面（CPP）磁阻传感器或读头具有覆盖传感器结构的侧壁的磁屏蔽几何形状，以防止由相邻数据轨道进入的磁通量引起的侧读。 屏蔽几何形状包括具有基本平坦表面的底部屏蔽和特别形状的顶部屏蔽。 顶部屏蔽件具有大致平行于传感器结构的侧壁的大致垂直部分，在传感器的轨道宽度区域上方的水平顶部部分，以及形成在传感器结构的任一侧上的底部屏蔽部分之上的水平侧部分。 分离底部和顶部屏蔽件的绝缘间隙材料与底部屏蔽件的水平部分和传感器结构的侧壁接触。
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5.发明授权Three terminal magnetic sensor having an in-stack longitudinal biasing layer structure 失效具有叠层纵向偏置层结构的三端磁传感器公开(公告)号：US07639459B2
公开(公告)日：2009-12-29
申请号：US11032598
申请日：2005-01-10
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , H01L29/66984 , H01L43/08
摘要： In one illustrative example, a three terminal magnetic sensor (TTM) suitable for use in a magnetic head has a sensor stack structure which includes a base region, a collector region, and an emitter region. A first barrier layer separates the emitter region from the base region, and a second barrier layer separates the collector region from the base region. A plurality of terminals of the TTM include a base lead coupled to the base region, a collector lead coupled to the collector region, and an emitter lead coupled to the emitter region. Preferably, the base region consists of a free layer structure so as to have a relatively small thickness. A pinned layer structure is made part of the emitter region. An in-stack longitudinal biasing layer (LBL) structure is formed in stack with the sensor stack structure and has a magnetic moment that is parallel to a sensing plane of the TTM for magnetically biasing the free layer structure. The in-stack LBL structure is made part of the collector region which also includes a layer of semiconductor material. In one variation, the emitter region has the in-stack LBL structure and the collector region has the pinned layer structure. The TTM may comprise a spin valve transistor (SVT), a magnetic tunnel transistor (MTT), or a double junction structure.
摘要翻译： 在一个说明性示例中，适用于磁头的三端磁传感器（TTM）具有包括基极区域，集电极区域和发射极区域的传感器堆叠结构。 第一阻挡层将发射极区域与基极区域分开，并且第二阻挡层将集电极区域与基极区域分离。 TTM的多个端子包括耦合到基极区域的基极引线，耦合到集电极区域的集电极引线和耦合到发射极区域的发射极引线。 优选地，基区由自由层结构组成，以便具有相对较小的厚度。 被钉扎层结构是发射极区域的一部分。 堆叠纵向偏置层（LBL）结构与传感器堆叠结构堆叠形成，并且具有平行于TTM的感测平面的磁矩，用于磁偏置自由层结构。 叠层LBL结构是集成区域的一部分，其还包括半导体材料层。 在一个变型中，发射极区域具有叠层LBL结构，并且集电极区域具有钉扎层结构。 TTM可以包括自旋阀晶体管（SVT），磁隧道晶体管（MTT）或双结结构。
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6.发明授权Three terminal magnetic sensing devices having base lead layers in-plane with collector substrate materials and methods of making the same 失效具有与集电体基板材料在一起的基极引线层的三端子磁感测装置及其制造方法公开(公告)号：US07635599B2
公开(公告)日：2009-12-22
申请号：US11239178
申请日：2005-09-29
IPC分类号： H01L21/00
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , H01L29/66984
摘要： Three terminal magnetic sensing devices (TTMs) having base lead layers in-plane with collector substrate materials, and methods of making the same, are disclosed. In one illustrative example, a collector substrate having an elevated region and a recessed region adjacent the elevated region is provided. An insulator layer is formed in full-film over the collector substrate, and a base lead layer is formed in full-film over the insulator layer and in-plane with semiconductor materials of the elevated region. The insulator materials and the base lead materials that are formed over the elevated region are removed. A sensor stack structure having an emitter region and a base region is then formed over the elevated region such that part of the base region is formed over an end of the base lead layer. A base conductive via may be formed to contact base lead materials of the base lead layer at a suitable distance away from the sensor stack structure. Advantageously, the base conductive via formation may occur without causing damage to the sensor stack structure. Also, the base lead layer is formed in the recessed region of the collector substrate prior to the formation of the sensor stack structure such that the TTM may be entirely in-situ manufactured. Furthermore, the trackwidth of the TTM may be defined directly by the elevated region of the collector substrate. The TTM is suitable for incorporation into nanoscale devices which increase areal recording densities, therefore aiding the revolution in magnetic storage.
摘要翻译： 公开了具有与集电器基板材料在一起的基极引线层的三端子磁感测装置（TTM）及其制造方法。 在一个说明性示例中，提供了具有升高区域和与升高区域相邻的凹陷区域的收集器基板。 在集电体基板上形成绝缘体层，并且在绝缘体层上形成基极引线层，并且与升高区域的半导体材料在同一平面内形成基极引线层。 去除在升高区域上形成的绝缘体材料和基底引线材料。 然后在升高的区域上形成具有发射极区域和基极区域的传感器堆叠结构，使得基极区域的一部分形成在基极引线层的一端上。 可以形成基底导电通孔，以在离传感器堆叠结构适当的距离处接触基底引线层的基底引线材料。 有利地，可以在不会对传感器堆叠结构造成损害的情况下发生基底导电通孔形成。 此外，在形成传感器堆叠结构之前，基极引线层形成在集电体基板的凹陷区域中，使得TTM可以完全原位制造。 此外，TTM的轨道宽度可以由收集器基板的升高区域直接定义。 TTM适合纳入纳米级器件，增加面积记录密度，从而有助于磁存储的革命。
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7.发明授权Magnetic head having thermally assisted write head with heater element, and protective sacrificial layer 失效磁头具有加热元件的热辅助写头和保护牺牲层公开(公告)号：US06999277B2
公开(公告)日：2006-02-14
申请号：US10631885
申请日：2003-07-30
IPC分类号： G11B5/147
CPC分类号： G11B5/127 , Y10T29/49032 , Y10T29/49082 , Y10T29/49083
摘要： A magnetic head including a media heating device. Following the fabrication of the heating device, a sacrificial layer of material is deposited to protect the heating device during subsequent process steps. Thereafter, write head components, such as write head induction coils and/or a P1 pole pedestal are fabricated above the heating device, and the sacrificial layer is substantially consumed in protecting the heating device during the aggressive etching and milling steps used to create those components. Further components, including a second magnetic pole are thereafter fabricated to complete the fabrication of the write head portion of the magnetic head. The sacrificial layer may be comprised of alumina, or a material such as NiFe that can act as a seed layer for a subsequent head components such as the P1 pole pedestal.
摘要翻译： 包括介质加热装置的磁头。 在加热装置的制造之后，沉积牺牲层材料以在随后的工艺步骤中保护加热装置。 此后，在加热装置之上制造诸如写头感应线圈和/或P1极基座的写头部件，并且在用于产生这些部件的腐蚀性蚀刻和铣削步骤期间，牺牲层基本上被消耗以保护加热装置 。 此后，制造包括第二磁极的其它部件以完成磁头的写入头部的制造。 牺牲层可以由氧化铝或诸如NiFe的材料组成，其可以用作后续头部部件如P1极基座的种子层。
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公开(公告)号：US07367111B2
公开(公告)日：2008-05-06
申请号：US11340263
申请日：2006-01-25
CPC分类号： H01F10/3268 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3906 , G11B5/3932 , G11B2005/0008 , G11B2005/3996 , H01F41/302 , H01F41/325 , H01L29/66984 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044
摘要： A method and structure for a spin valve transistor (SVT) comprises a magnetic field sensor, an insulating layer adjacent the magnetic field sensor, a bias layer adjacent the insulating layer, a non-magnetic layer adjacent the bias layer, and a ferromagnetic layer over the non-magnetic layer, wherein the insulating layer and the non-magnetic layer comprise antiferromagnetic materials. The magnetic field sensor comprises a base region, a collector region adjacent the base region, an emitter region adjacent the base region, and a barrier region located between the base region and the emitter region. The bias layer is between the insulating layer and the non-magnetic layer. The bias layer is magnetic and is at least three times the thickness of the magnetic materials in the base region.
摘要翻译： 自旋阀晶体管（SVT）的方法和结构包括磁场传感器，与磁场传感器相邻的绝缘层，与绝缘层相邻的偏置层，邻近偏置层的非磁性层，以及铁磁层 非磁性层，其中绝缘层和非磁性层包括反铁磁材料。 磁场传感器包括基极区域，邻近基极区域的集电极区域，邻近基极区域的发射极区域和位于基极区域和发射极区域之间的势垒区域。 偏置层位于绝缘层和非磁性层之间。 偏置层是磁性的，并且是基极区域中的磁性材料的厚度的至少三倍。
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9.发明授权公开(公告)号：US07290324B2
公开(公告)日：2007-11-06
申请号：US11231201
申请日：2005-09-19
CPC分类号： G11B5/127 , Y10T29/49032 , Y10T29/49082 , Y10T29/49083
摘要： A magnetic head including a media heating device. Following the fabrication of the heating device, a sacrificial layer of material is deposited to protect the heating device during subsequent process steps. Thereafter, write head components, such as write head induction coils and/or a P1 pole pedestal are fabricated above the heating device, and the sacrificial layer is substantially consumed in protecting the heating device during the aggressive etching and milling steps used to create those components. Further components, including a second magnetic pole are thereafter fabricated to complete the fabrication of the write head portion of the magnetic head. The sacrificial layer may be comprised of alumina, or a material such as NiFe that can act as a seed layer for a subsequent head components such as the P1 pole pedestal.
摘要翻译： 包括介质加热装置的磁头。 在加热装置的制造之后，沉积牺牲层材料以在随后的工艺步骤中保护加热装置。 此后，在加热装置上方制造诸如写入头感应线圈和/或P 1极基座的写头部件，并且在用于创建这些的侵蚀性蚀刻和铣削步骤期间，牺牲层基本上被消耗以保护加热装置 组件。 此后，制造包括第二磁极的其它部件以完成磁头的写入头部的制造。 牺牲层可以由氧化铝或诸如NiFe的材料组成，其可以用作后续头部部件例如P 1极基座的种子层。
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公开(公告)号：US09064628B2
公开(公告)日：2015-06-23
申请号：US13477978
申请日：2012-05-22
申请人： Robert E. Fontana, Jr. , Philipp Herget , Eugene J. O'Sullivan , Lubomyr T. Romankiw , Naigang Wang , Bucknell C. Webb
发明人： Robert E. Fontana, Jr. , Philipp Herget , Eugene J. O'Sullivan , Lubomyr T. Romankiw , Naigang Wang , Bucknell C. Webb
CPC分类号： H01F27/2804 , H01F5/00 , H01F17/0013 , H01F2017/0066 , H01F2017/0086 , H01F2027/2809 , H01L28/10
摘要： A thin film coupled inductor, a thin film spiral inductor, and a system that includes an electronic device and a power supply or power converter incorporating one or more such inductors. A thin film coupled inductor includes a wafer substrate; a bottom yoke comprising a magnetic material above the wafer substrate; a first insulating layer above the bottom yoke; a first conductor above the bottom yoke and separated therefrom by the first insulating layer; a second insulating layer above the first conductor; a second conductor above the second insulating layer; a third insulating layer above the second conductor; and a non-planar top yoke above the third insulating layer, the top yoke comprising a magnetic material.
摘要翻译： 薄膜耦合电感器，薄膜螺旋电感器以及包括电子器件和并入一个或多个此类电感器的电源或功率转换器的系统。 薄膜耦合电感器包括晶片衬底; 底部轭，其包括晶片衬底上方的磁性材料; 在底部轭上方的第一绝缘层; 第一导体，位于底部磁轭之上并由第一绝缘层分离; 在所述第一导体上方的第二绝缘层; 在第二绝缘层上方的第二导体; 在第二导体上方的第三绝缘层; 以及在第三绝缘层上方的非平面顶部磁轭，顶部磁轭包括磁性材料。
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