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1.发明授权Method of manufacturing a magnetic sensor by multiple depositions of varying geometry 有权通过不同几何形状的多次沉积制造磁性传感器的方法公开(公告)号：US07698807B2
公开(公告)日：2010-04-20
申请号：US11337020
申请日：2006-01-20
IPC分类号： G11B5/187
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3932 , H01L43/08 , H01L43/12 , Y10T29/49041 , Y10T29/49044 , Y10T29/49048
摘要： Formation of the magnetic sensor layers of a magnetic sensor are separated into at least two depositions to reduce the dimension of the sensor. The free layer portion of the sensor is deposited at a different process step than the pinned layer portion. The top of the free layer stack can be a tunnel barrier, the free layer, or part of the free layer. The free layer stack also may contain an in-stack bias layer. The longitudinal bias layer may be patterned in a separate processing step, which allows the stack containing the free layer to be effectively thinner and allow smaller track width dimensions.
摘要翻译： 将磁传感器的磁传感器层的形成分成至少两个沉积物以减小传感器的尺寸。 传感器的自由层部分以与被钉扎层部分不同的工艺步骤沉积。 自由层堆叠的顶部可以是隧道势垒，自由层或自由层的一部分。 自由层堆叠还可以包含堆叠内偏压层。 纵向偏置层可以在单独的处理步骤中进行图案化，其允许包含自由层的堆叠被有效地更薄并且允许更小的轨道宽度尺寸。
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2.发明授权Read sensor having an in-stack biasing structure and an AP coupled free layer structure for increased magnetic stability 失效具有堆叠偏压结构的读取传感器和用于提高磁稳定性的AP耦合自由层结构公开(公告)号：US07324313B2
公开(公告)日：2008-01-29
申请号：US10955681
申请日：2004-09-30
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/313 , G11B5/3903 , G11B5/3909 , G11B5/3932
摘要： Current-perpendicular-to-the-plane (CPP), current-in-to-the-plane (CIP), and tunnel valve type sensors are provided having an antiparallel (AP) coupled free layer structure, an in-stack biasing structure which stabilizes the AP coupled free layer structure and a nonmagnetic spacer layer formed between the in-stack biasing layer and the AP coupled free layer structure. The AP coupled free layer structure has a first AP coupled free layer adjacent to the nonmagnetic spacer layer, a second AP coupled free layer, and an antiparallel coupling (APC) layer formed between the first and the second AP coupled free layers. The net moment of the AP coupled free layer structure has an antiparallel edge magnetostatic coupling with the in-stack biasing structure. At the same time, the first AP coupled free layer has an antiparallel exchange coupling with the second AP coupled free layer. By forming the second AP coupled free layer with a thickness greater than a thickness of the first AP coupled free layer, the AP coupled free layer structure has a net magnetic moment in the direction of the second AP coupled free layer moment. The non-magnetic spacer layer is chosen so that first AP coupled free layer has a parallel interlayer (Neel or Orange-peel or positive exchange) coupling with the in-stack biasing structure, so that the interlayer coupling adds to the edge magnetostatic coupling to increase a stability of the AP coupled free layer structure.
摘要翻译： 提供了电流垂直于平面（CPP），电流平面（CIP）和隧道阀式传感器，其具有反平行（AP）耦合自由层结构，堆叠偏置结构 其稳定AP耦合的自由层结构和形成在堆叠间偏压层和AP耦合自由层结构之间的非磁性间隔层。 AP耦合自由层结构具有邻近非磁性间隔层的第一AP耦合自由层，第二AP耦合自由层以及形成在第一和第二AP耦合自由层之间的反并联耦合（APC）层。 AP耦合自由层结构的净矩具有与堆叠偏压结构的反平行边缘静磁耦合。 同时，第一AP耦合自由层与第二AP耦合自由层具有反平行交换耦合。 通过形成厚度大于第一AP耦合自由层的厚度的第二AP耦合自由层，AP耦合自由层结构在第二AP耦合自由层时刻的方向上具有净磁矩。 选择非磁性间隔层，使得第一AP耦合自由层具有与堆叠偏压结构耦合的平行中间层（Neel或橙色剥离或正交换），使得层间耦合增加了边缘静磁耦合 增加AP耦合自由层结构的稳定性。
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3.发明授权Semiconductor slider with an integral spin valve transistor structure and method for making same without a bonding step 有权具有整体自旋阀晶体管结构的半导体滑块及其制造方法，而无需结合步骤公开(公告)号：US07230805B2
公开(公告)日：2007-06-12
申请号：US11036238
申请日：2005-01-13
CPC分类号： B82Y10/00 , G11B5/102 , G11B5/3103 , G11B5/3163 , G11B5/332 , G11B5/3903 , G11B5/3967
摘要： A semiconductor slider including an integral spin valve transistor (SVT) having a read width of 250 nm or less disposed on a monolithic semiconductor. substrate, useful in magnetic data storage applications. The monolithic slider may also include other magnetic and semiconductor transistor structures and is fabricated in a single process using standard thin-film processing steps. The SVT includes a sensor stack having a top surface and including a first ferromagnetic (FM) layer in contact with and forming a Schottky barrier at the monolithic semiconductor substrate, a FM shield layer disposed over the sensor stack and in electrical contact with the top surface thereof, a SVT emitter terminal coupled to the FM shield, a SVT collector terminal coupled to the substrate and a SVT base terminal coupled to the first FM layer. The sensor stack may include a spin valve (SV) stack or a tunnel valve (TV) stack, for example.
摘要翻译： 一种半导体滑块，其包括设置在单片半导体上的读宽度为250nm或更小的整体自旋阀晶体管（SVT）。 基板，可用于磁数据存储应用。 单片滑块还可以包括其它磁性和半导体晶体管结构，并且使用标准薄膜处理步骤在单个工艺中制造。 SVT包括具有顶表面并且包括在单片半导体衬底处接触并形成肖特基势垒的第一铁磁（FM）层的传感器堆叠，设置在传感器堆叠上方并与顶表面电接触的FM屏蔽层 耦合到FM屏蔽的SVT发射极端子，耦合到衬底的SVT集电极端子和耦合到第一FM层的SVT基极端子。 传感器堆叠可以包括例如自旋阀（SV）堆叠或隧道阀（TV）堆叠。
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4.发明授权Semiconductor slider with an integral spin valve transistor structure and method for making same without a bonding step 失效具有整体自旋阀晶体管结构的半导体滑块及其制造方法，而无需结合步骤公开(公告)号：US06870717B2
公开(公告)日：2005-03-22
申请号：US10150189
申请日：2002-05-16
CPC分类号： B82Y10/00 , G11B5/102 , G11B5/3103 , G11B5/3163 , G11B5/332 , G11B5/3903 , G11B5/3967
摘要： A semiconductor slider including an integral spin valve transistor (SVT) having a read width of 250 nm or less disposed on a monolithic semiconductor substrate, useful in magnetic data storage applications. The monolithic slider may also include other magnetic and semiconductor transistor structures and is fabricated in a single process using standard thin-film processing steps. The SVT includes a sensor stack having a top surface and including a first ferromagnetic (FM) layer in contact with and forming a Schottky barrier at the monolithic semiconductor substrate, a FM shield layer disposed over the sensor stack and in electrical contact with the top surface thereof, a SVT emitter terminal coupled to the FM shield, a SVT collector terminal coupled to the substrate and a SVT base terminal coupled to the first FM layer. The sensor stack may include a spin valve (SV) stack or a tunnel valve (TV) stack, for example.
摘要翻译： 一种半导体滑块，其包括设置在单片半导体衬底上的读宽度为250nm或更小的整体自旋阀晶体管（SVT），可用于磁数据存储应用。 单片滑块还可以包括其它磁性和半导体晶体管结构，并且使用标准薄膜处理步骤在单个工艺中制造。 SVT包括具有顶表面并且包括在单片半导体衬底处接触并形成肖特基势垒的第一铁磁（FM）层的传感器堆叠，设置在传感器堆叠上方并与顶表面电接触的FM屏蔽层 耦合到FM屏蔽的SVT发射极端子，耦合到衬底的SVT集电极端子和耦合到第一FM层的SVT基极端子。 传感器堆叠可以包括例如自旋阀（SV）堆叠或隧道阀（TV）堆叠。
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5.发明授权Increased anisotropy induced by direct ion etch for telecommunications/electronics devices 有权通过电子/电子设备的直接离子蚀刻引起的各向异性增加公开(公告)号：US08004374B2
公开(公告)日：2011-08-23
申请号：US11845239
申请日：2007-08-27
CPC分类号： G11B5/3166 , G11B5/3163 , G11B5/3196 , G11B5/3932 , G11C11/14 , H01L43/12 , Y10T29/49075
摘要： A microwave bandstop filter having a magnetic strip formed over dielectric material. The magnetic resonant frequency is controlled by an induced magnetic anisotropy in the magnetic strip of the microwave bandstop filter. The magnetic anisotropy field is induced by an anisotropic surface texture formed on the surface of the magnetic strip itself, or formed on an underlying layer. Alternatively, the anisotropic surface texture could be formed on both an underlying layer and on the magnetic strip itself. This induced magnetic anisotropy field allows the resonant frequency of the microwave filter to be controlled over a wide frequency range and make high frequency operation possible without reliance on the application of an externally applied magnetic field.
摘要翻译： 一种微波带阻滤波器，其具有在电介质材料上形成的磁条。 磁共振频率由微波带阻滤波器的磁条中的感应磁各向异性控制。 磁各向异性场由形成在磁条本身的表面上的各向异性表面纹理引起，或形成在下层上。 或者，各向异性表面纹理可以形成在下层和磁条本身上。 该感应磁各向异性场允许微波滤波器的谐振频率在宽的频率范围内被控制，并且可以在不依赖外部施加的磁场的情况下进行高频运行。
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6.发明授权Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic in-stack bias layer 失效使用倾斜蚀刻底层的磁性读取传感器，用于在硬磁堆叠偏压层中诱导单轴磁各向异性公开(公告)号：US07460343B2
公开(公告)日：2008-12-02
申请号：US11097638
申请日：2005-03-31
IPC分类号： G11B5/39
CPC分类号： G11B5/3932 , B82Y25/00 , B82Y40/00 , H01F10/16 , H01F10/30 , H01F10/3272 , H01F10/3286 , H01F41/308 , H01L43/08
摘要： A magnetoresistive sensor having an in stack bias layer with an engineered magnetic anisotropy in a direction parallel with the medium facing surface. The in-stack bias layer may be constructed of CoPt, CoPtCr or some other magnetic material and is deposited over an underlayer that has been ion beam etched. The ion beam etch has been performed at an angle with respect to normal in order to form anisotropic roughness in form of oriented ripples or facets. The anisotropic roughness induces a uniaxial magnetic anisotropy substantially parallel to the medium facing surface in the hard magnetic in-stack bias layer deposited thereover.
摘要翻译： 磁阻传感器具有在与介质面向表面平行的方向上具有工程磁各向异性的堆叠偏置层。 叠层偏置层可以由CoPt，CoPtCr或一些其它磁性材料构成，并且沉积在已被离子束蚀刻的底层上。 已经以相对于正常的角度执行离子束蚀刻，以便形成定向的波纹或小面的各向异性的粗糙度。 各向异性粗糙度在其上沉积的硬磁堆叠偏压层中引起基本平行于面向介质的表面的单轴磁各向异性。
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7.发明授权Flux guide structure for a spin valve transistor which includes a slider body semiconductor layer 有权包括滑块体半导体层的自旋阀晶体管的通量引导结构公开(公告)号：US06577476B1
公开(公告)日：2003-06-10
申请号：US10108688
申请日：2002-03-28
IPC分类号： G11B539
CPC分类号： B82Y10/00 , G01R33/06 , G11B5/012 , G11B5/3106 , G11B5/332
摘要： A spin valve transistor (SVT) for a magnetic head and a method of making the same are described. A slider of a disk drive is formed of a semiconductor material, such as silicon. A free layer is formed over the semiconductor material and a magnetic pinned layer is formed over a portion of the free layer. The free layer has an edge that is substantially flush with an air bearing surface (ABS) between the magnetic head and the disk, whereas the magnetic pinned layer has an edge that is recessed away from the ABS. Advantageously, since the free layer serves as a flux guiding structure for the sensor, the sensor has a thinner profile at the ABS to accommodate higher recording densities.
摘要翻译： 描述了一种用于磁头的自旋阀晶体管（SVT）及其制造方法。 磁盘驱动器的滑块由诸如硅的半导体材料形成。 在半导体材料上形成自由层，并且在自由层的一部分上形成磁性被钉扎层。 自由层具有与磁头和盘之间的空气支承表面（ABS）基本齐平的边缘，而磁性钉扎层具有远离ABS凹进的边缘。 有利地，由于自由层用作传感器的通量引导结构，传感器在ABS处具有更薄的轮廓以适应较高的记录密度。
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8.发明授权Magneto-resistive and spin-valve sensor gap with reduced thickness and high thermal conductivity 失效磁阻和自旋阀传感器间隙具有减小的厚度和高导热性公开(公告)号：US06452761B1
公开(公告)日：2002-09-17
申请号：US09483087
申请日：2000-01-14
申请人： Matthew Joseph Carey , Jeffrey Robinson Childress , Robert Edward Fontana, Jr. , Bruce Alvin Gurney , Stuart Stephen Papworth-Parkin , Ren Xu
发明人： Matthew Joseph Carey , Jeffrey Robinson Childress , Robert Edward Fontana, Jr. , Bruce Alvin Gurney , Stuart Stephen Papworth-Parkin , Ren Xu
IPC分类号： G11B533
CPC分类号： B82Y10/00 , G11B5/3103 , G11B5/3106 , G11B5/3133 , G11B5/3903 , G11B5/40 , Y10T29/49043
摘要： The current invention provides for magnetic sensor devices with reduced gap thickness and improved thermal conductivity. Gap structures of the current invention are integrated in laminated Magneto-Resistive and Spin-Valve sensors used in magnetic data storage systems. The gap structures are produced by depositing metal layers and oxidizing portions of or all of the metal layers to form thin high quality oxidized metal dielectric separator layers. The oxidized metal layer provides for excellent electrical insulation of the sensor element and any remaining metallic portions of the metal layers provide a thermally conducting pathway to assist the dissipation of heat generated by the sensor element. Because of the combined qualities of electrical insulation and thermal conductivity, magnetic sensor devices of this invention can be made with thinner gap structures and operated at higher drive currents. Further, oxidized metal layers provide suitable surfaces to growing oxidized metal gap insulator layers of any thickness.
摘要翻译： 本发明提供了具有减小的间隙厚度和改善的导热性的磁传感器装置。 本发明的间隙结构集成在磁数据存储系统中使用的层压磁阻和旋转阀传感器中。 通过沉积金属层和氧化金属层的全部或全部以形成薄的高质量的氧化金属介电隔离层来产生间隙结构。 氧化的金属层提供传感器元件的优异的电绝缘性，并且金属层的任何剩余的金属部分提供导热通路，以帮助消散由传感器元件产生的热量。 由于电绝缘和导热性的综合特性，本发明的磁传感器装置可以用较薄的间隙结构制成，并在较高的驱动电流下工作。 此外，氧化的金属层为任何厚度的生长的氧化金属间隙绝缘体层提供合适的表面。
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9.发明申请CURRENT PERPENDICULAR TO PLANE SPIN VALVE WITH HIGH-POLARIZATION MATERIAL IN AP1 LAYER FOR REDUCED SPIN TORQUE 审中-公开在AP1层平面旋转阀的平面旋转阀用于减少旋转扭矩的当前公开(公告)号：US20090168269A1
公开(公告)日：2009-07-02
申请号：US11966017
申请日：2007-12-28
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3906 , H01F10/132 , H01F10/3272
摘要： A current perpendicular to plane magnetoresistive sensor having improved resistance amplitude change and reduced spin torque noise. The sensor has an antiparallel coupled pinned layer structure with at least one of the layers of the pinned layer structure includes a high spin polarization material such as Co2FeGe. The sensor can also include an antiparallel coupled free layer.
摘要翻译： 垂直于平面磁阻传感器的电流具有改善的电阻幅度变化和减少的自旋转矩噪声。 传感器具有反平行耦合的钉扎层结构，其中被钉扎层结构的至少一个层包括诸如Co 2 FeGe的高自旋极化材料。 传感器还可以包括反平行耦合的自由层。
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10.发明授权Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in hard magnetic bias layers 失效使用倾斜蚀刻底层的磁性读取传感器，用于诱导硬磁偏置层中的单轴磁各向异性公开(公告)号：US07457085B2
公开(公告)日：2008-11-25
申请号：US11096636
申请日：2005-03-31
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , G11B5/3932 , H01F10/16 , H01F10/30 , H01F10/3272 , H01F41/306 , H01L43/08 , H01L43/12
摘要： A magnetoresistive sensor having a hard bias layer with an engineered magnetic anisotropy in a direction substantially parallel with the medium facing surface. The hard bias layer may be constructed of CoPt, CoPtCr or some other magnetic material and is deposited over an underlayer that has been ion beam etched. The ion beam etch has been performed at an angle with respect to normal in order to induce anisotropic roughness on its surface for example in form of oriented ripples or facets. The anisotropic roughness induces a uniaxial magnetic anisotropy substantially parallel to the medium facing surface in the hard magnetic bias layers deposited there over.
摘要翻译： 磁阻传感器具有在与介质面对表面基本平行的方向上具有工程磁各向异性的硬偏置层。 硬偏置层可以由CoPt，CoPtCr或一些其它磁性材料构成，并且被沉积在已被离子束蚀刻的底层上。 已经以相对于正常的角度执行离子束蚀刻，以便在其表面上引起各向异性的粗糙度，例如以定向的波纹或小面的形式。 各向异性粗糙度在其上沉积的硬磁偏置层中引起基本平行于面向介质的表面的单轴磁各向异性。
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