公开(公告)号：US20070218683A1

公开(公告)日：2007-09-20

申请号：US11378263

申请日：2006-03-20

申请人： Tadahiro Ishizaka ,  Tsukasa Matsuda ,  Masamichi Hara ,  Jacques Faguet ,  Yasushi Mizusawa

发明人： Tadahiro Ishizaka ,  Tsukasa Matsuda ,  Masamichi Hara ,  Jacques Faguet ,  Yasushi Mizusawa

IPC分类号： C23C16/00 ,  H05H1/00

CPC分类号： C23C16/45542 ,  C23C16/32 ,  C23C16/36 ,  C23C16/509 ,  C23C16/56

摘要： A method for forming a modified TaC or TaCN film that may be utilized as a barrier film for Cu metallization. The method includes disposing a substrate in a process chamber of a plasma enhanced atomic layer deposition (PEALD) system configured to perform a PEALD process, depositing a TaC or TaCN film on the substrate using the PEALD process, and modifying the deposited TaC or TaCN film by exposing the deposited TaC or TaCN film to plasma excited hydrogen or atomic hydrogen or a combination thereof in order to remove carbon from at least the plasma exposed portion of the deposited TaCN film. The method further includes forming a metal film on the modified TaCN film, where the modified TaCN film provides stronger adhesion to the metal film than the deposited TaCN film. According to one embodiment, a TaCN film is deposited from alternating exposures of TAIMATA and plasma excited hydrogen.

摘要翻译： 用于形成可用作Cu金属化阻挡膜的改性TaC或TaCN膜的方法。 该方法包括将基板设置在等离子体增强原子层沉积（PEALD）系统的处理室中，其被配置为执行PEALD工艺，使用PEALD工艺在基板上沉积TaC或TaCN膜，以及修改沉积的TaC或TaCN膜 通过将沉积的TaC或TaCN膜暴露于等离子体激发的氢或原子氢或其组合，以便从至少沉积的TaCN膜的等离子体暴露部分除去碳。 该方法还包括在改性的TaCN膜上形成金属膜，其中改性的TaCN膜比沉积的TaCN膜提供比金属膜更强的附着力。 根据一个实施方案，通过TAIMATA和等离子体激发氢的交替曝光沉积TaCN膜。

公开(公告)号：US20140003892A1

公开(公告)日：2014-01-02

申请号：US14005461

申请日：2012-03-06

申请人： Kaoru Yamamoto ,  Masamichi Hara ,  Tetsuya Miyashita

发明人： Kaoru Yamamoto ,  Masamichi Hara ,  Tetsuya Miyashita

IPC分类号： F16K3/30 ,  B65G49/00

CPC分类号： F16K3/30 ,  B65G49/00 ,  C23C14/566 ,  C23C16/16 ,  C23C16/4401 ,  F16K3/0227 ,  F16K3/182 ,  F16K51/02 ,  H01L21/28556 ,  H01L21/67126 ,  H01L21/76841

摘要： A substrate processing device includes a depressurizable hot wall chamber having a sidewall with a temperature which becomes higher than room temperature and a first substrate transferring port provided in the sidewall, a depressurizable transfer chamber having a transfer arm mechanism and a second substrate transferring port, and a gate valve unit provided between the hot wall chamber and the transfer chamber. The gate valve unit includes: a housing having a sidewall provided with communicating holes, a first housing substrate transferring port, and a second housing substrate transferring port; a valve body which is elevatable in the housing; and a double sealing structure having a first sealing member and a second sealing member provided at an outer side of the first sealing member. The communicating holes communicate a gap between the first sealing member and the second sealing member with an internal space of the housing.

摘要翻译： 基板处理装置包括具有侧壁的可降压热壁室，其温度变得高于室温，以及设置在侧壁中的第一基板输送口，具有转移臂机构和第二基板输送口的可降压输送室，以及 设置在所述热壁室和所述传送室之间的闸阀单元。 闸阀单元包括：壳体，其具有设置有连通孔的侧壁，第一壳体基板传送端口和第二壳体基板传送端口; 可在壳体内升降的阀体; 以及具有第一密封构件和设置在第一密封构件的外侧的第二密封构件的双重密封结构。 连通孔与第一密封构件和第二密封构件之间的间隙与壳体的内部空间连通。

公开(公告)号：US09121515B2

公开(公告)日：2015-09-01

申请号：US14005461

申请日：2012-03-06

申请人： Kaoru Yamamoto ,  Masamichi Hara ,  Tetsuya Miyashita

发明人： Kaoru Yamamoto ,  Masamichi Hara ,  Tetsuya Miyashita

IPC分类号： H01L21/677 ,  F16K3/30 ,  F16K51/02 ,  H01L21/67 ,  C23C16/44 ,  H01L21/285 ,  H01L21/768 ,  B65G49/00 ,  F16K3/02 ,  C23C14/56 ,  F16K3/18 ,  C23C16/16

CPC分类号： F16K3/30 ,  B65G49/00 ,  C23C14/566 ,  C23C16/16 ,  C23C16/4401 ,  F16K3/0227 ,  F16K3/182 ,  F16K51/02 ,  H01L21/28556 ,  H01L21/67126 ,  H01L21/76841

摘要： A substrate processing device includes a depressurizable hot wall chamber having a sidewall with a temperature which becomes higher than room temperature and a first substrate transferring port provided in the sidewall, a depressurizable transfer chamber having a transfer arm mechanism and a second substrate transferring port, and a gate valve unit provided between the hot wall chamber and the transfer chamber. The gate valve unit includes: a housing having a sidewall provided with communicating holes, a first housing substrate transferring port, and a second housing substrate transferring port; a valve body which is elevatable in the housing; and a double sealing structure having a first sealing member and a second sealing member provided at an outer side of the first sealing member. The communicating holes communicate a gap between the first sealing member and the second sealing member with an internal space of the housing.

摘要翻译： 基板处理装置包括具有侧壁的可降压热壁室，其温度变得高于室温，以及设置在侧壁中的第一基板输送口，具有转移臂机构和第二基板输送口的可降压输送室，以及 设置在所述热壁室和所述传送室之间的闸阀单元。 闸阀单元包括：壳体，其具有设置有连通孔的侧壁，第一壳体基板传送端口和第二壳体基板传送端口; 可在壳体内升降的阀体; 以及具有第一密封构件和设置在第一密封构件的外侧的第二密封构件的双重密封结构。 连通孔与第一密封构件和第二密封构件之间的间隙与壳体的内部空间连通。

公开(公告)号：US07638002B2

公开(公告)日：2009-12-29

申请号：US10998420

申请日：2004-11-29

申请人： Kenji Suzuki ,  Emmanuel P. Guidotti ,  Gerrit J. Leusink ,  Masamichi Hara ,  Daisuke Kuroiwa

发明人： Kenji Suzuki ,  Emmanuel P. Guidotti ,  Gerrit J. Leusink ,  Masamichi Hara ,  Daisuke Kuroiwa

IPC分类号： C23C16/00 ,  B01D7/00

CPC分类号： C23C16/4481 ,  C23C16/16

摘要： A high conductance, multi-tray solid precursor evaporation system coupled with a high conductance vapor delivery system is described for increasing deposition rate by increasing exposed surface area of solid precursor. The multi-tray solid precursor evaporation system includes a base tray with one or more upper trays. Each tray is configured to support and retain film precursor in, for example, solid powder form or solid tablet form. Additionally, each tray is configured to provide for a high conductance flow of carrier gas over the film precursor while the film precursor is heated. For example, the carrier gas flows inward over the film precursor, and vertically upward through a flow channel within the stackable trays and through an outlet in the solid precursor evaporation system.

摘要翻译： 描述了与高电导蒸气输送系统耦合的高电导多托盘固体前驱物蒸发系统，以通过增加固体前体的暴露表面积来提高沉积速率。 多托盘固体前体蒸发系统包括具有一个或多个上托盘的基托。 每个托盘被构造成支撑和保持例如固体粉末形式或固体片剂形式的膜前体。 此外，每个托盘构造成在膜前体被加热的同时提供载气在膜前体上的高电导流。 例如，载体气体向内流过膜前体，并且垂直向上流过可堆放托盘内的流动通道并通过固体前驱物蒸发系统中的出口。

公开(公告)号：US06607710B1

公开(公告)日：2003-08-19

申请号：US09686372

申请日：2000-10-12

申请人： Osamu Ito ,  Nobuhiko Kanazashi ,  Aki Morishita ,  Masamichi Hara ,  Masaru Kanagawa ,  Yasuko Watanabe ,  Yoshitoshi Itaya

发明人： Osamu Ito ,  Nobuhiko Kanazashi ,  Aki Morishita ,  Masamichi Hara ,  Masaru Kanagawa ,  Yasuko Watanabe ,  Yoshitoshi Itaya

IPC分类号： A61K5100

CPC分类号： A61K51/0497 ,  C07B59/004 ,  C07F9/3865 ,  C07F9/3869 ,  C07F9/3873

摘要： An object of the present invention is to provide a bisphosphonic acid derivative and said bisphosphonic acid derivative being labeled with a radioactive nuclide, which has properties of rapid accumulation to the bone and rapid urinary excretion. The present invention relates to a bisphosphonic acid derivative and said bisphosphonic acid derivative being labeled with a radioactive nuclide, which is represented by the following general formula (1), R—Y—A  (1) wherein A is a bisphosphonic acid or a salt thereof, having P—C—P bond; Y is a bonding portion such as a methylene, an amido etc.; R is a group of any one of a polyaminopolycarboxylic acid, an aliphatic carboxylic acid, a mercaptoacetylpolyamino acid or its derivatives and a compound represented by the formula (2), X is a halogen atom or an isotope thereof or an alkyl tin; Z is a group of any one of compounds of an aminocarboxylic acid, an alkylcarboxylic acid or a substituted-alkylcarboxylic acid, an alkylsulfonic acid or a substituted-alkylsulfonic acid.

摘要翻译： 本发明的目的是提供双膦酸衍生物和所述双膦酸衍生物，其被放射性核素标记，其具有快速积累到骨骼和快速排尿的性质。 本发明涉及用下列通式（1）表示的放射性核素标记的双膦酸衍生物和二膦酸衍生物，其中A为具有P-C-P键的双膦酸或其盐; Y是亚甲基，酰氨基等的结合部分; R是聚氨基多羧酸，脂肪族羧酸，巯基乙酰基聚氨基酸或其衍生物中的任何一种和式（2）表示的化合物，X是卤素原子或其同位素或烷基锡; Z是氨基羧酸，烷基羧酸或取代的烷基羧酸的化合物，烷基磺酸或取代的烷基磺酸中的任何一种。

公开(公告)号：US20070072392A1

公开(公告)日：2007-03-29

申请号：US11523502

申请日：2006-09-20

申请人： Meiki Ooseki ,  Kiyofumi Yamamoto ,  Masamichi Hara

发明人： Meiki Ooseki ,  Kiyofumi Yamamoto ,  Masamichi Hara

IPC分类号： H01L21/30 ,  H01L21/461 ,  H01L21/46 ,  H01L21/302

CPC分类号： H01L27/14683 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14685

摘要： The present invention provides a method of cleaning a cover glass having a spacer which is to be incorporated in a solid image pickup device, comprising: a dry cleaning step performed after dry etching; a wipe-off cleaning step performed after the dry cleaning step; a primary wet cleaning step performed after the wipe-off cleaning step; and a secondary wet cleaning step performed after the primary wet cleaning step, wherein the cover glass having a spacer is fabricated by a manufacturing process including the steps of: bonding a spacer substrate to a glass substrate with an adhesive; applying a photoresist to the spacer substrate; exposing and developing the photoresist by use of a photomask and forming an etching mask corresponding to the spacer on the spacer substrate; and forming a spacer on the glass substrate by the dry etching the spacer substrate.

摘要翻译： 本发明提供了一种清洁具有待固定在固体摄像装置中的隔离物的玻璃罩的方法，包括：干蚀刻后进行的干洗步骤; 在干洗步骤之后执行擦拭清洁步骤; 在擦拭清洁步骤之后执行的初级湿清洗步骤; 以及在所述一次湿式清洗步骤之后执行的二次湿式清洗步骤，其中具有间隔件的所述盖玻璃通过包括以下步骤的制造方法制造：将间隔基板与粘合剂接合到玻璃基板; 将光刻胶施加到间隔基板上; 通过使用光掩模曝光和显影光致抗蚀剂，并在间隔基板上形成对应于间隔物的蚀刻掩模; 以及通过干蚀刻间隔基板在玻璃基板上形成间隔物。

公开(公告)号：US20060185598A1

公开(公告)日：2006-08-24

申请号：US11351546

申请日：2006-02-10

申请人： Kenji Suzuki ,  Emmanuel Guidotti ,  Gerrit Leusink ,  Masamichi Hara ,  Daisuke Kuroiwa ,  Tadahiro Ishizaka

发明人： Kenji Suzuki ,  Emmanuel Guidotti ,  Gerrit Leusink ,  Masamichi Hara ,  Daisuke Kuroiwa ,  Tadahiro Ishizaka

IPC分类号： C23C16/00

CPC分类号： C23C16/4481

摘要： A high conductance, multi-tray film precursor evaporation system coupled with a high conductance vapor delivery system is described for increasing the deposition rate by increasing exposed surface area of film precursor. The multi-tray film precursor evaporation system includes one or more trays. Each tray is configured to support and retain film precursor in, for example, solid powder form or solid tablet form. Additionally, each tray is configured to provide for a high conductance flow of carrier gas over the film precursor while the film precursor is heated. For example, the carrier gas flows inward over the film precursor, and vertically upward through a flow channel within the stackable trays and through an outlet in the solid precursor evaporation system.

摘要翻译： 描述了与高电导蒸气传输系统耦合的高电导多托盘膜前体蒸发系统，以通过增加膜前体的暴露表面积来增加沉积速率。 多托盘膜前体蒸发系统包括一个或多个托盘。 每个托盘被构造成支撑和保持例如固体粉末形式或固体片剂形式的膜前体。 此外，每个托盘构造成在膜前体被加热的同时提供载气在膜前体上的高电导流。 例如，载体气体向内流过膜前体，并且垂直向上流过可堆放托盘内的流动通道并通过固体前驱物蒸发系统中的出口。

公开(公告)号：US20060112882A1

公开(公告)日：2006-06-01

申请号：US10998420

申请日：2004-11-29

申请人： Kenji Suzuki ,  Emmanuel Guidotti ,  Gerrit Leusink ,  Masamichi Hara ,  Daisuke Kuroiwa

发明人： Kenji Suzuki ,  Emmanuel Guidotti ,  Gerrit Leusink ,  Masamichi Hara ,  Daisuke Kuroiwa

IPC分类号： C23C16/00

CPC分类号： C23C16/4481 ,  C23C16/16

摘要： A high conductance, multi-tray solid precursor evaporation system coupled with a high conductance vapor delivery system is described for increasing deposition rate by increasing exposed surface area of solid precursor. The multi-tray solid precursor evaporation system includes a base tray with one or more upper trays. Each tray is configured to support and retain film precursor in, for example, solid powder form or solid tablet form. Additionally, each tray is configured to provide for a high conductance flow of carrier gas over the film precursor while the film precursor is heated. For example, the carrier gas flows inward over the film precursor, and vertically upward through a flow channel within the stackable trays and through an outlet in the solid precursor evaporation system.

公开(公告)号：US07484315B2

公开(公告)日：2009-02-03

申请号：US11007962

申请日：2004-12-09

申请人： Kenji Suzuki ,  Emmanuel P. Guidotti ,  Gerrit J. Leusink ,  Masamichi Hara ,  Daisuke Kuroiwa

发明人： Kenji Suzuki ,  Emmanuel P. Guidotti ,  Gerrit J. Leusink ,  Masamichi Hara ,  Daisuke Kuroiwa

IPC分类号： F26B25/10

CPC分类号： C23C16/16 ,  C23C16/4481

摘要： A replaceable precursor tray for use with a high conductance, multi-tray solid precursor evaporation system coupled with a high conductance vapor delivery system is described for increasing deposition rate by increasing exposed surface area of solid precursor. The multi-tray solid precursor evaporation system is configured to be coupled to the process chamber of a thin film deposition system, and it includes a base tray with one or more stackable upper trays. Each tray is configured to support and retain film precursor in, for example, solid powder form or solid tablet form. Additionally, each tray is configured to provide for a high conductance flow of carrier gas over the film precursor while the film precursor is heated. For example, the carrier gas flows inward over the film precursor, and vertically upward through a flow channel within the stackable trays and through an outlet in the solid precursor evaporation system.

摘要翻译： 描述了与用于与高电导蒸气输送系统耦合的高电导多托盘固体前体蒸发系统一起使用的可替换的前体托盘，用于通过增加固体前体的暴露表面积来提高沉积速率。 多托盘固体前体蒸发系统被配置为耦合到薄膜沉积系统的处理室，并且其包括具有一个或多个可堆叠的上托盘的基托。 每个托盘被构造成支撑和保持例如固体粉末形式或固体片剂形式的膜前体。 此外，每个托盘构造成在膜前体被加热的同时提供载气在膜前体上的高电导流。 例如，载体气体向内流过膜前体，并且垂直向上流过可堆放托盘内的流动通道并通过固体前驱物蒸发系统中的出口。

公开(公告)号：US07459396B2

公开(公告)日：2008-12-02

申请号：US11537575

申请日：2006-09-29

申请人： Kenji Suzuki ,  Emmanuel P. Guidotti ,  Gerrit J. Leusink ,  Masamichi Hara ,  Daisuke Kuroiwa

发明人： Kenji Suzuki ,  Emmanuel P. Guidotti ,  Gerrit J. Leusink ,  Masamichi Hara ,  Daisuke Kuroiwa

IPC分类号： H01L21/00

CPC分类号： C23C16/4481 ,  C23C16/16

摘要： A method for depositing a Ru metal layer on a patterned substrate from a film precursor vapor delivered from a multi-tray film precursor evaporation system. The method comprises providing a patterned substrate in a process chamber of a deposition system, and forming a process gas containing Ru3(CO)12 precursor vapor and a carrier gas comprising CO gas. The process gas is formed by: providing a solid Ru3(CO)12 precursor in a plurality of spaced trays within a precursor evaporation system, wherein each tray is configured to support the solid precursor and wherein the plurality of spaced trays collectively provide a plurality of surfaces of solid precursor; heating the solid precursor in the plurality of spaced trays in the precursor evaporation system to a temperature greater than about 60° C. and maintaining the solid precursor at the temperature to form the vapor; and flowing the carrier gas in contact with the plurality of surfaces of the solid precursor during the heating to capture Ru3(CO)12 precursor vapor in the carrier gas as the vapor is being formed at the plurality of surfaces. The method further includes transporting the process gas from the precursor evaporation system to the process chamber and exposing the patterned substrate to the process gas to deposit a Ru metal layer on the patterned substrate by a thermal CVD.

摘要翻译： 一种用于从多托盘膜前体蒸发系统递送的膜前体蒸气在图案化衬底上沉积Ru金属层的方法。 该方法包括在沉积系统的处理室中提供图案化衬底，并形成含有Ru 3（CO）12前体蒸气和包含CO气体的载气的工艺气体。 工艺气体通过以下方式形成：在前体蒸发系统内的多个间隔的塔板中提供固体Ru 3（CO）12前体，其中每个托盘被配置为支撑固体前体，并且其中多个间隔的托盘共同提供多个 固体前体表面; 将前体蒸发系统中的多个间隔的塔板中的固体前体加热到大于约60℃的温度，并将固体前体保持在该温度以形成蒸气; 并且在加热期间使载气与固体前体的多个表面接触，以在多个表面中形成蒸气时捕获载气中的Ru 3（CO）12前体蒸气。 该方法还包括将处理气体从前体蒸发系统输送到处理室，并将图案化衬底暴露于工艺气体，以通过热CVD沉积图案化衬底上的Ru金属层。