公开(公告)号：US20210331167A1

公开(公告)日：2021-10-28

申请号：US16475035

申请日：2018-08-01

Applicant: BOE Technology Group Co., Ltd.

Inventor： Xiaochen Ma ,  Guangcai Yuan ,  Ce Ning ,  Song Liu

IPC: B01L3/00 ,  G01N27/414

Abstract: The present application provides a micro-channel structure. The micro-channel structure includes a base substrate; a rail layer on the base substrate and including a first rail and a second rail spaced apart from each other; and a wall layer on a side of the rail layer distal to the base substrate, and including a first wall and a second wall at least partially spaced apart from each other, thereby forming a micro-channel between the first wall and the second wall. The micro-channel has an extension direction along a plane substantially parallel to a main surface of the base substrate, the extension direction being substantially parallel to extension directions of the first rail and the second rail along the plane substantially parallel to the main surface of the base substrate.

公开(公告)号：US11133363B2

公开(公告)日：2021-09-28

申请号：US16556342

申请日：2019-08-30

Applicant: BOE Technology Group Co., Ltd.

Inventor： Ke Wang ,  Xinhong Lu ,  Hehe Hu ,  Wei Yang ,  Ce Ning

IPC: H01L27/32 ,  H01L27/12 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423

Abstract: The present discloses an array substrate and a manufacturing method thereof, and a display device. The array substrate includes a first transistor and a second transistor. The first transistor includes a first active layer, a first gate, a first source and a first drain. The second transistor includes a second active layer, a second gate, a second source and a second drain. An orthographic projection of the second source on the base substrate and an orthographic projection of the second drain on the base substrate at least partially overlap. One of the second source and the second drain is in the same layer as and made from the same material as the first gate. The first source and the first drain are in the same layer as and made from the same material as the other of the second source and the second drain.

公开(公告)号：US11092866B2

公开(公告)日：2021-08-17

申请号：US16631331

申请日：2019-07-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hehe Hu ,  Xiaochen Ma ,  Guangcai Yuan ,  Ce Ning ,  Xin Gu

IPC: G02F1/1368 ,  G02F1/1362

Abstract: The present disclosure provides a display panel and a manufacturing method thereof, a driving method and a display device. The display panel includes: a base substrate and a thin film transistor on a surface of the base substrate. The thin film transistor includes: a gate, and a source and a drain arranged along a first direction, and a first passivation layer covering the gate, the source and the drain. a space region in which liquid crystal molecules are filled is formed in the first passivation layer. The space region is between the source and the drain. The source and the drain are configured to control rotation of the liquid crystal molecules.

公开(公告)号：US20210220824A1

公开(公告)日：2021-07-22

申请号：US16755911

申请日：2019-04-16

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Ce Ning ,  Xiaochen Ma ,  Hehe Hu ,  Guangcai Yuan ,  Xin Gu

IPC: B01L3/00

Abstract: The present disclosure relates to a micro-channel device. The micro-channel device may include a micro-channel structure and a semiconductor junction. The micro-channel structure may include a base layer, a plurality of rails distributed on the base layer at intervals, and a cover layer comprising a plurality of columns. The cover layer and the base layer are configured to form a plurality of micro-channels. The semiconductor junction may include a P-type semiconductor layer, an intrinsic semiconductor layer and a N-type semiconductor layer stacked in a first direction.

公开(公告)号：US10916662B2

公开(公告)日：2021-02-09

申请号：US16528622

申请日：2019-08-01

Applicant: BOE Technology Group Co., Ltd.

Inventor： Feng Guan ,  Guangcai Yuan ,  Zhi Wang ,  Chen Xu ,  Qi Yao ,  Zhanfeng Cao ,  Ce Ning ,  Woobong Lee ,  Lei Chen

IPC: H01L29/786 ,  H01L27/12

Abstract: An oxide thin film transistor, an array substrate, and preparation methods thereof are disclosed. The method for preparing an oxide thin film transistor comprises a step of forming a pattern comprising an oxide semiconductor active layer on a substrate, wherein the step comprises: forming an amorphous oxide semiconductor thin film on the substrate; performing an excimer laser annealing, at least at a position in the amorphous oxide semiconductor thin film corresponding to a channel region of oxide semiconductor active layer to be formed, such that the amorphous oxide semiconductor material at the laser-annealed position is crystallized, to form a crystalline oxide semiconductor material; and forming the pattern comprising the oxide semiconductor active layer.

公开(公告)号：US10795478B2

公开(公告)日：2020-10-06

申请号：US16319982

申请日：2018-05-14

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wenlin Zhang ,  Wei Yang ,  Ce Ning

IPC: G06F3/041 ,  H01L27/12

Abstract: Provided are an array substrate and preparation method therefor, and a display apparatus. The array substrate includes: a substrate, the substrate having a first TFT region, a touch control region and a second TFT region; a photosensitive PN junction, the photosensitive PN junction being provided in the touch control region; a first thin-film transistor, provided in the first TFT region, and electrically connected to the photosensitive PN junction; and a second thin-film transistor, provided in the second TFT region, and electrically connected to a pixel electrode.

公开(公告)号：US20190267559A1

公开(公告)日：2019-08-29

申请号：US16115009

申请日：2018-08-28

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Song Liu ,  Yu Wen ,  Jianming Sun ,  Zhengliang Li ,  Xiaochen Ma ,  Hehe Hu ,  Wenlin Zhang ,  Jianhua Du ,  Ce Ning

IPC: H01L51/42 ,  H01L51/44

Abstract: The present disclosure relates to the field of display, in particular to a thin film transistor, a method for preparing the same, and a display device. The thin film transistor of the present disclosure includes a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode, a drain electrode, and a photoelectric conversion layer in contact with the gate electrode. The photoelectric conversion layer is configured to generate an induced potential in a light environment.

公开(公告)号：US20160315195A1

公开(公告)日：2016-10-27

申请号：US15086857

申请日：2016-03-31

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Ce Ning ,  Wei Yang ,  Xiaohu Li

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/49 ,  H01L29/22 ,  H01L21/027 ,  H01L29/45 ,  H01L27/12 ,  H01L29/66 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L21/0274 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1259 ,  H01L27/1262 ,  H01L29/22 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/4958 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78648

Abstract: An array substrate and a manufacturing method thereof, and a display device are provided. The manufacturing method comprises: forming a first gate metal pattern on a base substrate; forming a gate insulating layer, a first active layer pattern and a source-drain metal pattern on the base substrate on which the first gate metal pattern is formed; forming a first protective layer pattern and a through hole pattern on the base substrate on which the source-drain metal pattern is formed; and forming a second active layer pattern and a pixel electrode pattern on the base substrate on which the first protective layer pattern is formed. Embodiments of the present disclosure solve problems of poor display performance and high cost of the array substrate and achieve effects of improving the display performance and reducing the cost.

Abstract translation: 提供阵列基板及其制造方法以及显示装置。 该制造方法包括：在基底基板上形成第一栅极金属图案; 在其上形成有第一栅极金属图案的基底基板上形成栅极绝缘层，第一有源层图案和源极 - 漏极金属图案; 在其上形成有源极 - 漏极金属图案的基底基板上形成第一保护层图案和通孔图案; 以及在其上形成有第一保护层图案的基底基板上形成第二有源层图案和像素电极图案。 本公开的实施例解决了显示性能差和阵列基板的高成本的问题，并且实现了提高显示性能并降低成本的效果。

公开(公告)号：US09362414B2

公开(公告)日：2016-06-07

申请号：US14416227

申请日：2014-04-16

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Ke Wang ,  Seongyeol Yoo ,  Ce Ning ,  Wei Yang

IPC: H01L29/786 ,  H01L21/4763 ,  H01L29/51 ,  H01L29/49 ,  H01L29/66 ,  H01L29/423 ,  H01L29/417

Abstract: Provided are oxide thin-film transistor and display device employing the same, and method for manufacturing an oxide thin-film transistor array substrate. A source electrode and a drain electrode are located below an oxide active layer pattern, and a gate electrode is located below the source electrode and the drain electrode, and the gate insulating layer is located between the gate electrode and the source electrode/the drain electrode.

公开(公告)号：US20250164842A1

公开(公告)日：2025-05-22

申请号：US19028480

申请日：2025-01-17

Applicant: BOE Technology Group Co., Ltd.

Inventor： Binbin Tong ,  Lizhong Wang ,  Jianbo Xian ,  Liping Lei ,  Chunping Long ,  Yunping Di ,  Ce Ning

IPC: G02F1/1362 ,  G02F1/01 ,  G02F1/1333 ,  G02F1/1339 ,  G02F1/1343

Abstract: A display panel is disclosed. In the display panel, the second electrode is electrically connected to the first electrode through the first via hole, and a first support structure is provided in a region corresponding to the first via hole; and at least a part of the first support structure is located in the first via hole, and an orthographic projection of the first via hole on the base substrate at least partially overlaps with an orthographic projection of the gate line on the base substrate, the first support structure extends upward within the first via hole to an upper opening region of the first via hole, and a top of the first support structure is higher than the upper surface of the first interlayer insulating layer, a surface of the first support structure close to the second substrate is a curved surface.