公开(公告)号：US06574130B2

公开(公告)日：2003-06-03

申请号：US09915095

申请日：2001-07-25

申请人： Brent M. Segal ,  Darren K. Brock ,  Thomas Rueckes

发明人： Brent M. Segal ,  Darren K. Brock ,  Thomas Rueckes

IPC分类号： G11C1100

CPC分类号： G11C23/00 ,  B82Y10/00 ,  G11C13/025 ,  G11C2213/16 ,  G11C2213/77 ,  G11C2213/81 ,  Y10S977/724 ,  Y10S977/734 ,  Y10S977/742 ,  Y10S977/942 ,  Y10S977/943

摘要： A hybrid memory system having electromechanical memory cells is disclosed. A memory cell core circuit has an array of electromechanical memory cells, in which each cell is a crossbar junction at least one element of which is a nanotube or a nanotube ribbon. An access circuit provides array addresses to the memory cell core circuit to select at least one corresponding cell. The access circuit is constructed of semiconductor circuit elements.

摘要翻译： 公开了一种具有机电存储器单元的混合存储器系统。 存储单元核心电路具有机电存储器单元的阵列，其中每个单元是横截面结，其中至少一个元件是纳米管或纳米管带。 访问电路向存储器单元核心电路提供阵列地址以选择至少一个对应的单元。 存取电路由半导体电路元件构成。

公开(公告)号：US20090283803A1

公开(公告)日：2009-11-19

申请号：US12415247

申请日：2009-03-31

申请人： Brent M. Segal ,  Darren K. Brock ,  Thomas Rueckes

发明人： Brent M. Segal ,  Darren K. Brock ,  Thomas Rueckes

IPC分类号： H01L27/08 ,  H01L21/82

CPC分类号： G11C23/00 ,  B82Y10/00 ,  G11C13/025 ,  G11C2213/16 ,  G11C2213/81 ,  H01H1/0094 ,  H01L21/76838 ,  H01L27/10 ,  Y10S977/724 ,  Y10S977/742 ,  Y10S977/796 ,  Y10S977/856 ,  Y10S977/888 ,  Y10S977/943 ,  Y10T428/24893 ,  Y10T428/24917

摘要： Electromechanical circuits, such as memory cells, and methods for making same are disclosed. The circuits include a structure having electrically conductive traces and supports extending from a surface of the substrate, and nanotube ribbons suspended by the supports that cross the electrically conductive traces, wherein each ribbon comprises one or more nanotubes. The electro-mechanical circuit elements are made by providing a structure having electrically conductive traces and supports, in which the supports extend from a surface of the substrate. A layer of nanotubes is provided over the supports, and portions of the layer of nanotubes are selectively removed to form ribbons of nanotubes that cross the electrically conductive traces. Each ribbon includes one or more nanotubes.

摘要翻译： 公开了诸如存储单元的机电电路及其制造方法。 这些电路包括具有导电迹线和从衬底表面延伸的支撑体的结构，以及由支撑体悬挂的穿过导电迹线的纳米管带，其中每个带包括一个或多个纳米管。 电 - 机械电路元件通过提供具有导电迹线和支撑件的结构来制造，其中支撑件从基板的表面延伸。 在载体上提供一层纳米管，并且选择性地去除纳米管层的部分以形成穿过导电迹线的纳米管带。 每个带包括一个或多个纳米管。

公开(公告)号：US07294877B2

公开(公告)日：2007-11-13

申请号：US10811373

申请日：2004-03-26

申请人： Thomas Rueckes ,  Brent M. Segal ,  Bernard Vogeli ,  Darren K. Brock ,  Venkatachalam C. Jaiprakash ,  Claude L. Bertin

发明人： Thomas Rueckes ,  Brent M. Segal ,  Bernard Vogeli ,  Darren K. Brock ,  Venkatachalam C. Jaiprakash ,  Claude L. Bertin

IPC分类号： H01L51/30

CPC分类号： H01L51/055 ,  B82Y10/00 ,  G11C13/025 ,  G11C16/0416 ,  G11C23/00 ,  G11C2213/17 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/42324 ,  H01L51/0048 ,  H01L51/0052

摘要： Nanotube on gate FET structures and applications of such, including n2 crossbars requiring only 2n control lines. A non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and a channel region of a second semiconductor type of material disposed between the source and drain region. A gate structure is made of at least one of semiconductive or conductive material and is disposed over an insulator over the channel region. A control gate is made of at least one of semiconductive or conductive material. An electromechanically-deflectable nanotube switching element is in fixed contact with one of the gate structure and the control gate structure and is not in fixed contact with the other of the gate structure and the control gate structure. The device has a network of inherent capacitances, including an inherent capacitance of an undeflected nanotube switching element in relation to the gate structure. The network is such that the nanotube switching element is deflectable into contact with the other of the gate structure and the control gate structure in response to signals being applied to the control gate and one of the source region and drain region. Certain embodiments of the device have an area of about 4 F2. Other embodiments include a release line is positioned in spaced relation to the nanotube switching element, and having a horizontal orientation that is parallel to the orientation of the source and drain diffusions. Other embodiments provide an n2 crossbar array having n2 non-volatile transistor devices, but require only 2n control lines.

摘要翻译： 纳米管栅极FET结构及其应用，包括只需要2n条控制线的n 2条交叉。 非挥发性晶体管器件包括第一半导体类型的材料的源极区域和漏极区域以及设置在源极和漏极区域之间的第二半导体类型的材料的沟道区域。 栅极结构由半导体或导电材料中的至少一种制成，并且设置在沟道区域上方的绝缘体上。 控制门由半导体或导电材料中的至少一种制成。 机电偏转型纳米管开关元件与栅极结构和控制栅极结构中的一个固定接触，并且不与栅极结构和控制栅极结构中的另一个固定接触。 该器件具有固有电容的网络，包括相对于栅极结构的未折射的纳米管开关元件的固有电容。 网络使得纳米管开关元件响应于施加到控制栅极和源极区域和漏极区域之一的信号而偏转成与栅极结构和控制栅极结构中的另一个接触。 该装置的某些实施例具有约4F 2的面积。 其他实施例包括释放线与纳米管开关元件间隔开定位，并且具有平行于源极和漏极扩散的取向的水平取向。 其他实施例提供了具有n 2个非易失性晶体管器件的n≥2的交叉开关阵列，但是仅需要2n个控制线。

公开(公告)号：US06944054B2

公开(公告)日：2005-09-13

申请号：US10810962

申请日：2004-03-26

申请人： Thomas Rueckes ,  Brent M. Segal ,  Bernhard Vogeli ,  Darren K. Brock ,  Venkatachalam C. Jaiprakash ,  Claude L. Bertin

发明人： Thomas Rueckes ,  Brent M. Segal ,  Bernhard Vogeli ,  Darren K. Brock ,  Venkatachalam C. Jaiprakash ,  Claude L. Bertin

IPC分类号： G11C13/02 ,  G11C23/00 ,  G11C11/34

CPC分类号： G11C23/00 ,  B82Y10/00 ,  G11C13/025 ,  Y10S977/943

摘要： A non-volatile memory array includes a plurality of memory cells, each cell receiving a bit line, word line, and release line. Each memory cell includes a cell selection transistor and a restore transistor with first, second and third nodes. Each cell further includes an electromechanically deflectable switch, the position of which manifests the logical state of the cell. Each cell is bit selectable for read and write operations.

摘要翻译： 非易失性存储器阵列包括多个存储器单元，每个单元接收位线，字线和释放线。 每个存储单元包括单元选择晶体管和具有第一，第二和第三节点的恢复晶体管。 每个单元还包括机电偏转开关，其位置表示单元的逻辑状态。 每个单元都可以进行读和写操作。

公开(公告)号：US08013363B2

公开(公告)日：2011-09-06

申请号：US11835759

申请日：2007-08-08

申请人： Claude L. Bertin ,  Thomas Rueckes ,  X. M. Henry Huang ,  Ramesh Sivarajan ,  Eliodor G. Ghenciu ,  Steven L. Konsek ,  Mitchell Meinhold ,  Jonathan W. Ward ,  Darren K. Brock

发明人： Claude L. Bertin ,  Thomas Rueckes ,  X. M. Henry Huang ,  Ramesh Sivarajan ,  Eliodor G. Ghenciu ,  Steven L. Konsek ,  Mitchell Meinhold ,  Jonathan W. Ward ,  Darren K. Brock

IPC分类号： H01L27/10

CPC分类号： H01L27/1021 ,  B82Y10/00 ,  G11C13/025 ,  G11C2213/19 ,  H01L21/8221 ,  H01L23/5256 ,  H01L27/0688 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/00

摘要： Under one aspect, a nonvolatile nanotube diode includes: a substrate; a semiconductor element disposed over the substrate, the semiconductor element having an anode and a cathode and capable of forming an electrically conductive pathway between the anode and the cathode; a nanotube switching element disposed over the semiconductor element, the nanotube switching element including a conductive contact and a nanotube fabric element capable of a plurality of resistance states; and a conductive terminal disposed in spaced relation to the conductive contact, wherein the nanotube fabric element is interposed between and in electrical communication with the conductive contact and the conductive contact is in electrical communication with the cathode, and wherein in response to electrical stimuli applied to the anode and the conductive terminal, the nonvolatile nanotube diode is capable of forming an electrically conductive pathway between the anode and the conductive terminal.

摘要翻译： 在一个方面，非易失性纳米管二极管包括：基板; 设置在所述衬底上的半导体元件，所述半导体元件具有阳极和阴极，并且能够在所述阳极和所述阴极之间形成导电通路; 设置在所述半导体元件上的纳米管开关元件，所述纳米管开关元件包括导电接触件和能够具有多个电阻状态的纳米管织物元件; 以及导电端子，其以导电接触件的间隔设置，其中所述纳米管织物元件置于所述导电接触件之间并与所述导电接触件电连通，并且所述导电接触件与所述阴极电连通，并且其中响应于施加到 阳极和导电端子，非易失性纳米管二极管能够在阳极和导电端子之间形成导电通路。

公开(公告)号：US07782650B2

公开(公告)日：2010-08-24

申请号：US11835845

申请日：2007-08-08

申请人： Claude L. Bertin ,  Thomas Rueckes ,  X. M. Henry Huang ,  Ramesh Sivarajan ,  Eliodor G. Ghenciu ,  Steven L. Konsek ,  Mitchell Meinhold ,  Jonathan W. Ward ,  Darren K. Brock

发明人： Claude L. Bertin ,  Thomas Rueckes ,  X. M. Henry Huang ,  Ramesh Sivarajan ,  Eliodor G. Ghenciu ,  Steven L. Konsek ,  Mitchell Meinhold ,  Jonathan W. Ward ,  Darren K. Brock

IPC分类号： G11C11/00

CPC分类号： H01L27/1021 ,  G11C2213/19 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/1203 ,  Y10S977/943

摘要： Under one aspect, a memory array includes word lines; bit lines; memory cells; and a memory operation circuit. Each memory cell responds to electrical stimulus on a word line and on a bit line and includes: a two-terminal non-volatile nanotube switching device having first and second terminals, a semiconductor diode element, and a nanotube fabric article capable of multiple resistance states. The semiconductor diode and nanotube article are between and in electrical communication with the first and second terminals, which are coupled to the word line bit line respectively. The operation circuit selects cells by activating bit and/or word lines, detects a resistance state of the nanotube fabric article of a selected memory cell, and adjusts electrical stimulus applied to the cell to controllably induce a selected resistance state in the nanotube fabric article. The selected resistance state corresponds to an informational state of the memory cell.

摘要翻译： 在一个方面，存储器阵列包括字线; 位线 记忆细胞; 和存储器操作电路。 每个存储器单元响应于字线和位线上的电刺激，并且包括：具有第一和第二端子的二端非易失性纳米管开关器件，半导体二极管元件和能够具有多个电阻状态的纳米管织物制品 。 半导体二极管和纳米管制品分别与第一和第二端子电连接，并且与第一和第二端子电连接，它们分别耦合到字线位线。 操作电路通过激活位和/或字线来选择单元，检测所选择的存储单元的纳米管织物的电阻状态，并调整施加到单元的电刺激以可控制地引起纳米管织物制品中选定的电阻状态。 选择的电阻状态对应于存储单元的信息状态。

公开(公告)号：US08217490B2

公开(公告)日：2012-07-10

申请号：US11835856

申请日：2007-08-08

申请人： Claude L. Bertin ,  Thomas Rueckes ,  X. M. Henry Huang ,  Ramesh Sivarajan ,  Eliodor G. Ghenciu ,  Steven L. Konsek ,  Mitchell Meinhold ,  Jonathan W. Ward ,  Darren K. Brock

发明人： Claude L. Bertin ,  Thomas Rueckes ,  X. M. Henry Huang ,  Ramesh Sivarajan ,  Eliodor G. Ghenciu ,  Steven L. Konsek ,  Mitchell Meinhold ,  Jonathan W. Ward ,  Darren K. Brock

IPC分类号： G11C11/56 ,  G11C5/00 ,  H01L29/00

CPC分类号： H01L27/1021 ,  B82Y10/00 ,  G11C13/025 ,  G11C2213/19 ,  G11C2213/71 ,  G11C2213/72 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/1203 ,  Y10S977/943

摘要： Under one aspect, a non-volatile nanotube switch includes a first terminal; a nanotube block including a multilayer nanotube fabric, at least a portion of which is positioned over and in contact with at least a portion of the first terminal; a second terminal, at least a portion of which is positioned over and in contact with at least a portion of the nanotube block, wherein the nanotube block is constructed and arranged to prevent direct physical and electrical contact between the first and second terminals; and control circuitry capable of applying electrical stimulus to the first and second terminals. The nanotube block can switch between a plurality of electronic states in response to a plurality of electrical stimuli applied by the control circuitry to the first and second terminals. For each different electronic state, the nanotube block provides an electrical pathway of different resistance between the first and second terminals.

摘要翻译： 在一个方面，非挥发性纳米管开关包括第一端子; 纳米管块，其包括多层纳米管织物，其至少一部分位于所述第一端子的至少一部分上方并与其接触; 第二端子，其至少一部分定位在所述纳米管块的至少一部分上方并与所述纳米管块的至少一部分接触，其中所述纳米管块被构造和布置成防止所述第一和第二端子之间的直接物理和电接触; 以及能够向第一和第二终端施加电刺激的控制电路。 响应于由控制电路施加到第一和第二端子的多个电刺激，纳米管块可以在多个电子状态之间切换。 对于每个不同的电子状态，纳米管块提供在第一和第二端子之间具有不同电阻的电路径。

公开(公告)号：US08513768B2

公开(公告)日：2013-08-20

申请号：US11835651

申请日：2007-08-08

申请人： Claude L. Bertin ,  Thomas Rueckes ,  X. M. Henry Huang ,  Ramesh Sivarajan ,  Eliodor G. Ghenciu ,  Steven L. Konsek ,  Mitchell Meinhold ,  Jonathan W. Ward ,  Darren K. Brock

发明人： Claude L. Bertin ,  Thomas Rueckes ,  X. M. Henry Huang ,  Ramesh Sivarajan ,  Eliodor G. Ghenciu ,  Steven L. Konsek ,  Mitchell Meinhold ,  Jonathan W. Ward ,  Darren K. Brock

IPC分类号： H01L23/52

CPC分类号： H01L27/1021 ,  B82Y10/00 ,  G11C13/025 ,  G11C2213/19 ,  H01L21/8221 ,  H01L23/5256 ,  H01L27/0688 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/00

摘要： Under one aspect, a non-volatile nanotube diode device includes first and second terminals; a semiconductor element including a cathode and an anode, and capable of forming a conductive pathway between the cathode and anode in response to electrical stimulus applied to the first conductive terminal; and a nanotube switching element including a nanotube fabric article in electrical communication with the semiconductive element, the nanotube fabric article disposed between and capable of forming a conductive pathway between the semiconductor element and the second terminal, wherein electrical stimuli on the first and second terminals causes a plurality of logic states.

摘要翻译： 在一个方面，非挥发性纳米管二极管器件包括第一和第二端子; 包括阴极和阳极的半导体元件，并且能够响应于施加到第一导电端子的电刺激而在阴极和阳极之间形成导电路径; 以及纳米管开关元件，其包括与所述半导体元件电连通的纳米管织物制品，所述纳米管织物制品设置在所述半导体元件和所述第二端子之间，并且能够形成所述第一和第二端子之间的电刺激， 多个逻辑状态。

公开(公告)号：US09911743B2

公开(公告)日：2018-03-06

申请号：US11835852

申请日：2007-08-08

申请人： Claude L. Bertin ,  Thomas Rueckes ,  X. M. Henry Huang ,  Ramesh Sivarajan ,  Eliodor G. Ghenciu ,  Steven L. Konsek ,  Mitchell Meinhold ,  Jonathan W. Ward ,  Darren K. Brock

发明人： Claude L. Bertin ,  Thomas Rueckes ,  X. M. Henry Huang ,  Ramesh Sivarajan ,  Eliodor G. Ghenciu ,  Steven L. Konsek ,  Mitchell Meinhold ,  Jonathan W. Ward ,  Darren K. Brock

IPC分类号： H01L27/102 ,  B82Y10/00 ,  G11C13/02 ,  H01L21/822 ,  H01L27/06 ,  H01L27/12

CPC分类号： H01L27/1021 ,  B82Y10/00 ,  G11C13/025 ,  G11C2213/19 ,  G11C2213/71 ,  G11C2213/72 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/1203

摘要： Under one aspect, a method of making a nanotube switch includes: providing a substrate having a first conductive terminal; depositing a multilayer nanotube fabric over the first conductive terminal; and depositing a second conductive terminal over the multilayer nanotube fabric, the nanotube fabric having a thickness, density, and composition selected to prevent direct physical and electrical contact between the first and second conductive terminals. In some embodiments, the first and second conductive terminals and the multilayer nanotube fabric are lithographically patterned so as to each have substantially the same lateral dimensions, e.g., to each have a substantially circular or rectangular lateral shape. In some embodiments, the multilayer nanotube fabric has a thickness from 10 nm to 200 nm, e.g., 10 nm to 50 nm. The structure may include an addressable diode provided under the first conductive terminal or deposited over the second terminal.

公开(公告)号：US08699268B2

公开(公告)日：2014-04-15

申请号：US11973035

申请日：2007-10-05

申请人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

发明人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

IPC分类号： G11C11/50 ,  G11C11/52

CPC分类号： H01L29/78 ,  B82Y10/00 ,  B82Y99/00 ,  G11C7/065 ,  G11C13/025 ,  G11C16/0416 ,  G11C17/16 ,  G11C17/165 ,  G11C23/00 ,  G11C2213/16 ,  G11C2213/17 ,  G11C2213/79 ,  H01H1/0094 ,  H01L27/10 ,  H01L27/1052 ,  H01L27/112 ,  H01L27/11206 ,  H01L27/115 ,  H01L27/286 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/42324 ,  H01L51/0048 ,  H01L51/0052 ,  H01L51/0508 ,  Y10S977/708 ,  Y10S977/724 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/936 ,  Y10S977/938 ,  Y10S977/94 ,  Y10S977/943

摘要： Field effect devices having a drain controlled via a nanotube switching element. Under one embodiment, a field effect device includes a source region and a drain region of a first semiconductor type and a channel region disposed therebetween of a second semiconductor type. The source region is connected to a corresponding terminal. A gate structure is disposed over the channel region and connected to a corresponding terminal. A nanotube switching element is responsive to a first control terminal and a second control terminal and is electrically positioned in series between the drain region and a terminal corresponding to the drain region. The nanotube switching element is electromechanically operable to one of an open and closed state to thereby open or close an electrical communication path between the drain region and its corresponding terminal. When the nanotube switching element is in the closed state, the channel conductivity and operation of the device is responsive to electrical stimulus at the terminals corresponding to the source and drain regions and the gate structure.

摘要翻译： 具有通过纳米管开关元件控制的漏极的场效应器件。 在一个实施例中，场效应器件包括第一半导体类型的源极区域和漏极区域以及设置在第二半导体类型之间的沟道区域。 源区域连接到相应的终端。 栅极结构设置在沟道区域上并连接到相应的端子。 纳米管开关元件响应于第一控制端子和第二控制端子，并且电连接地定位在漏极区域和对应于漏极区域的端子之间。 纳米管开关元件在机电上可操作地处于打开和关闭状态之一，从而打开或关闭漏区和其相应端之间的电连通路径。 当纳米管开关元件处于闭合状态时，器件的沟道导电性和操作响应于对应于源极和漏极区域以及栅极结构的端子处的电刺激。