公开(公告)号：US20050191824A1

公开(公告)日：2005-09-01

申请号：US11106135

申请日：2005-04-13

申请人： Carlos Mazure ,  Bruno Ghyselen

发明人： Carlos Mazure ,  Bruno Ghyselen

IPC分类号： H01L21/20 ,  H01L21/762 ,  H01L29/10 ,  H01L29/15 ,  H01L21/30 ,  H01L31/0312

CPC分类号： H01L29/1054 ,  H01L21/76254 ,  H01L21/76259

摘要： Methods for producing a multilayer semiconductor structure are described. In an embodiment, the method includes providing a support substrate made of a first semiconductor material having a first lattice parameter, and depositing a layer of a second semiconductor material having a second lattice parameter that is substantially different than the first lattice parameter onto the support substrate. In this manner, an intermediate structure is formed that has an interface between the first and second semiconductor materials, and the depositing is conducted such that most of the defects in the deposited layer are confined to an adaptation layer located in a region adjacent to the interface. The method also includes creating a zone of weakness in the intermediate structure, bonding the second semiconductor material layer to a target substrate, detaching the support substrate at the zone of weakness to obtain a multilayer semiconductor structure having an exposed surface where detached, and treating the exposed surface to assure that the adaptation layer is fully removed in order to obtain a relaxed thin layer of the second semiconductor material having a high quality surface.

摘要翻译： 对多层半导体结构体的制造方法进行说明。 在一个实施例中，该方法包括提供由具有第一晶格参数的第一半导体材料制成的支撑衬底，以及将具有与第一晶格参数基本不同的第二晶格参数的第二半导体材料层沉积到支撑衬底上 。 以这种方式，形成在第一和第二半导体材料之间具有界面的中间结构，并且进行沉积，使得沉积层中的大部分缺陷被限制在位于与界面相邻的区域中的适配层 。 该方法还包括在中间结构中产生弱点区域，将第二半导体材料层接合到目标衬底，在弱化区域分离支撑衬底以获得具有剥离的暴露表面的多层半导体结构， 以确保适配层被完全去除以获得具有高质量表面的第二半导体材料的松弛薄层。

公开(公告)号：US08049224B2

公开(公告)日：2011-11-01

申请号：US12862471

申请日：2010-08-24

申请人： Bruno Ghyselen ,  Daniel Bensahel ,  Thomas Skotnicki

发明人： Bruno Ghyselen ,  Daniel Bensahel ,  Thomas Skotnicki

IPC分类号： H01L29/12

CPC分类号： H01L29/1054 ,  H01L21/76254 ,  H01L21/76259 ,  Y10S438/938

摘要： Semiconductor wafers having a thin layer of strained semiconductor material. These structures include a substrate; an oxide layer upon the substrate; a silicon carbide (SiC) layer upon the oxide layer, and a strained layer of a semiconductor material in a strained state upon the silicon carbide layer, or a matching layer upon the donor substrate that is made from a material that induces strain in subsequent epitaxially grown layers thereon; a strained layer of a semiconductor material of defined thickness in a strained state; and an insulating or semi-insulating layer upon the strained layer in a thickness that retains the strained state of the strained layer. The insulating or semi-insulating layers are made of silicon carbide or oxides and act to retain strain in the strained layer.

摘要翻译： 半导体晶片具有应变半导体材料的薄层。 这些结构包括底物; 基底上的氧化物层; 氧化物层上的碳化硅（SiC）层，以及在碳化硅层上处于应变状态的半导体材料的应变层，或者由施主衬底上的由随后的外延生长引起应变的材料制成的匹配层 生长层; 在应变状态下具有规定厚度的半导体材料的应变层; 以及在应变层上的绝缘或半绝缘层，其厚度保持应变层的应变状态。 绝缘层或半绝缘层由碳化硅或氧化物制成并用于将应变保留在应变层中。

公开(公告)号：US07646038B2

公开(公告)日：2010-01-12

申请号：US11852562

申请日：2007-09-10

申请人： Bruce Faure ,  Fabrice Letertre ,  Bruno Ghyselen

发明人： Bruce Faure ,  Fabrice Letertre ,  Bruno Ghyselen

IPC分类号： H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336

CPC分类号： C30B25/183 ,  C30B33/00 ,  H01L21/76254

摘要： An efficient method of fabricating a high-quality heteroepitaxial microstructure having a smooth surface. The method includes detaching a layer from a base structure to provide a carrier substrate having a detached surface, and then forming a heteroepitaxial microstructure on the detached surface of the carrier substrate by depositing an epitaxial layer on the detached surface of a carrier substrate. Also included is a heteroepitaxial microstructure fabricated from such method.

摘要翻译： 制造具有光滑表面的高品质异质外延微结构的有效方法。 该方法包括从基底结构分离层以提供具有分离表面的载体基底，然后通过在载体基底的分离表面上沉积外延层而在载体基底的分离表面上形成异质外延微结构。 还包括由这种方法制造的异质外延微结构。

公开(公告)号：US07498245B2

公开(公告)日：2009-03-03

申请号：US10276306

申请日：2001-05-29

申请人： Bernard Aspar ,  Chrystelle Lagahe ,  Olivier Rayssac ,  Bruno Ghyselen

发明人： Bernard Aspar ,  Chrystelle Lagahe ,  Olivier Rayssac ,  Bruno Ghyselen

IPC分类号： H01L21/00

CPC分类号： H01L21/76254 ,  H01L2221/68368

摘要： This invention relates to a substrate (1) weakened by the presence of a micro-cavities zone, the micro-cavities zone (4′) delimiting a thin layer (5) with one face (2) of the substrate (1), some or all of the gaseous species having been eliminated from the micro-cavities (4′).The invention also relates to a process for the production of such a substrate.

摘要翻译： 本发明涉及通过存在微腔区而被削弱的衬底（1），用空心衬垫（1）的一个面（2）限定薄层（5）的微腔区（4'），一些 或已经从微腔（4'）中去除的全部气态物质。 本发明还涉及生产这种基材的方法。

公开(公告)号：US07465991B2

公开(公告)日：2008-12-16

申请号：US11402047

申请日：2006-04-12

申请人： Bruno Ghyselen ,  Fabrice Letertre

发明人： Bruno Ghyselen ,  Fabrice Letertre

IPC分类号： H01L27/01

CPC分类号： H01L21/3148 ,  H01L21/318 ,  H01L21/76254 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/2003 ,  H01L29/267 ,  Y10T428/24479

摘要： A semiconductor substrate that includes a relatively thin monocrystalline useful layer, an intermediate layer transferred from a source substrate, and a relatively thick layer of a support present on one of the useful layer of the intermediate layer. The support is made of a deposited material that has a lower quality than that of one or both of the intermediate and useful layers. A bonding layer may be included on one of the intermediate layer or the useful layer, or both, to facilitate bonding of the layers an a thin layer may be provided between the useful layer and intermediate layer. These final substrates are useful in optic, electronic, or optoelectronic applications.

摘要翻译： 一种半导体衬底，其包括相对薄的单晶有用层，从源极衬底转移的中间层和存在于所述中间层的有用层之一上的相对厚的载体层。 该载体由具有比中间层和有用层中的一个或两个的质量低的沉积材料制成。 可以在中间层或有用层之一或两者中包括结合层，以促进层的结合，可以在有用层和中间层之间提供薄层。 这些最终的底物可用于光学，电子或光电子应用。

公开(公告)号：US20080164492A1

公开(公告)日：2008-07-10

申请号：US12040134

申请日：2008-02-29

申请人： Bruno Ghyselen ,  Daniel Bensahel ,  Thomas Skotnicki

发明人： Bruno Ghyselen ,  Daniel Bensahel ,  Thomas Skotnicki

IPC分类号： H01L29/04 ,  H01L21/18

CPC分类号： H01L29/1054 ,  H01L21/76254 ,  H01L21/76259 ,  Y10S438/938

摘要： A process for preparing a semiconductor wafer with a strained layer having an elevated critical thickness. A first wafer having a strained layer of a semiconductor material on a matching layer is provided, with the semiconductor material having a first lattice parameter corresponding to a relaxed state and a first critical thickness corresponding to the first strained state, and the first thickness is less than the first critical thickness, The matching layer has a matching lattice parameter that is sufficiently different than the first lattice parameter to retain the strained layer in the strained state, The strained layer is transferred to a receiving substrate selected to provide the transferred strained layer with a second critical thickness that is greater than the first critical thickness, and additional semiconductor material is grown on the transferred strained layer to provide a second thickness that is greater than the first critical thickness and less than the second critical thickness, The invention also relates to the semiconductor structures that can be produced by the process.

摘要翻译： 一种制备具有临界厚度升高的应变层的半导体晶片的方法。 提供了在匹配层上具有半导体材料应变层的第一晶片，半导体材料具有对应于松弛状态的第一晶格参数和对应于第一应变状态的第一临界厚度，并且第一厚度较小 匹配层具有与第一晶格参数充分不同的匹配晶格参数，以将应变层保持在应变状态。应变层被转移到选择的接收衬底以提供转移的应变层， 第二临界厚度大于第一临界厚度，并且附加的半导体材料在转移的应变层上生长以提供大于第一临界厚度并小于第二临界厚度的第二厚度。本发明还涉及 可以通过该方法生产的半导体结构 。

公开(公告)号：US07265435B2

公开(公告)日：2007-09-04

申请号：US11261785

申请日：2005-10-31

申请人： Bruno Ghyselen ,  Takeshi Akatsu

发明人： Bruno Ghyselen ,  Takeshi Akatsu

IPC分类号： H01L31/288 ,  H01L21/425

CPC分类号： H01L21/26506 ,  H01L21/76254

摘要： A method for implanting atomic species through an uneven surface of a semiconductor layer. The technique includes applying a covering layer upon the uneven surface in an amount sufficient and in a manner to increase surface uniformity. The method also includes implanting atomic species through the covering layer and uneven surface to obtain a more uniform depth of implantation of the atomic species in the layer.

摘要翻译： 一种用于通过半导体层的不平坦表面注入原子物质的方法。 该技术包括以足够的量并以增加表面均匀性的方式在不平坦表面上施加覆盖层。 该方法还包括通过覆盖层和不平坦表面注入原子物质，以获得层中原子物质的更均匀的注入深度。

公开(公告)号：US07256075B2

公开(公告)日：2007-08-14

申请号：US11075273

申请日：2005-03-07

申请人： Bruno Ghyselen ,  Cécile Aulnette ,  Bénédite Osternaud ,  Takeshi Akatsu ,  Yves Mathieu Le Vaillant

发明人： Bruno Ghyselen ,  Cécile Aulnette ,  Bénédite Osternaud ,  Takeshi Akatsu ,  Yves Mathieu Le Vaillant

IPC分类号： H01L21/00

CPC分类号： H01L21/02032 ,  H01L21/76254 ,  H01L21/76259

摘要： The invention relates to a method of transferring useful layers from a donor wafer which includes a multi-layer structure on the surface of the donor wafer that has a thickness sufficient to form multiple useful layers for subsequent detachment. The layers may be formed of materials having sufficiently different properties such that they may be selectively removed. The layers of material may also include sub-layers that can be selectively removed from each other.

摘要翻译： 本发明涉及从施主晶片转移有用层的方法，该施主晶片在施主晶片的表面上包括多层结构，其具有足以形成用于随后拆卸的多个有用层的厚度。 这些层可以由具有足够不同性质的材料形成，使得它们可以被选择性地去除。 材料层还可以包括可以相互选择性地去除的子层。

公开(公告)号：US07009270B2

公开(公告)日：2006-03-07

申请号：US10755007

申请日：2004-01-08

申请人： Fabrice Letertre ,  Bruno Ghyselen ,  Oliver Rayssac

发明人： Fabrice Letertre ,  Bruno Ghyselen ,  Oliver Rayssac

IPC分类号： H01L29/00

CPC分类号： H01L21/187 ,  B81C1/00365 ,  B81C2201/0191 ,  C30B25/183 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02439 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/76254

摘要： A stress absorbing microstructure assembly including a support substrate having an accommodation layer that has plurality of motifs engraved or etched in a surface, a buffer layer and a nucleation layer. The stress absorbing microstructure assembly may also include an insulating layer between the buffer layer and the nucleation layer. This assembly can receive thick epitaxial layers thereon with concern of causing cracking of such layers.

摘要翻译： 一种应力吸收微结构组件，包括具有在表面上雕刻或蚀刻的多个图案的容纳层的支撑衬底，缓冲层和成核层。 应力吸收微结构组件还可以包括缓冲层和成核层之间的绝缘层。 该组件可以在其上接收厚的外延层，同时引起这种层的破裂。

公开(公告)号：US06974760B2

公开(公告)日：2005-12-13

申请号：US10893192

申请日：2004-07-15

申请人： Bruno Ghyselen ,  Fabrice Letertre

发明人： Bruno Ghyselen ,  Fabrice Letertre

IPC分类号： H01L21/265 ,  H01L21/02 ,  H01L21/18 ,  H01L21/20 ,  H01L21/266 ,  H01L21/76 ,  H01L21/762 ,  H01L27/12 ,  H01L21/30

CPC分类号： H01L21/02032 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/26586 ,  H01L21/266 ,  H01L21/7602 ,  H01L21/76254

摘要： Methods for transferring a useful layer of silicon carbide to a receiving substrate are described. In an embodiment, the technique includes implanting at least H+ ions through a front face of a source substrate of silicon carbide with an implantation energy E greater than or equal to 95 keV and an implantation dose D chosen to form an optimal weakened zone near a mean implantation depth, the optimal weakened zone defining the useful layer and a remainder portion of the source substrate. The method also includes bonding the front face of the source substrate to a contact face of the receiving substrate, and detaching the useful layer from the remainder portion of the source substrate along the weakened zone while minimizing or avoiding forming an excess zone of silicon carbide material at the periphery of the useful layer that was not transferred to the receiving substrate during detachment. Such a method facilitates recycling the remainder portion of the source substrate.

摘要翻译： 描述了将有用的碳化硅层转移到接收衬底的方法。 在一个实施例中，该技术包括将至少H + +离子注入到碳化硅源极基底的前面，其注入能量E大于或等于95keV，并且将植入剂量D选择为 在平均植入深度附近形成最佳弱化区，最佳弱化区限定有用层和源极衬底的剩余部分。 该方法还包括将源极基板的正面接合到接收基板的接触面，并且沿着弱化区域将有用层与源极基板的剩余部分分离，同时最小化或避免形成碳化硅材料的过剩区域 在有用层的外围，在分离期间未被转移到接收基板。 这种方法有助于再循环源极衬底的剩余部分。