公开(公告)号：US09263487B2

公开(公告)日：2016-02-16

申请号：US14313243

申请日：2014-06-24

申请人： CANON KABUSHIKI KAISHA

发明人： Taro Kato ,  Mineo Shimotsusa ,  Hiroaki Sano ,  Takeshi Ichikawa ,  Yasuhiro Sekine ,  Mahito Shinohara ,  Genzo Momma

IPC分类号： H04N5/225 ,  H01L27/146

CPC分类号： H01L27/14627 ,  H01L27/14621 ,  H01L27/14629 ,  H01L27/1463

摘要： A photoelectric conversion apparatus includes a semiconductor substrate having a photoelectric conversion portion. An insulator is provided on the semiconductor substrate. The insulator has a hole corresponding to the photoelectric conversion portion. A waveguide member is provided in the hole. An in-layer lens is provided on a side of the waveguide member farther from the semiconductor substrate. A first intermediate member is provided between the waveguide member and the in-layer lens. The first intermediate member has a lower refractive index than the in-layer lens.

摘要翻译： 光电转换装置包括具有光电转换部分的半导体衬底。 绝缘体设置在半导体衬底上。 绝缘体具有与光电转换部对应的孔。 波导构件设置在孔中。 在距离半导体衬底更远的波导构件的一侧设置有层内透镜。 第一中间构件设置在波导构件和内层透镜之间。 第一中间构件具有比层内透镜低的折射率。

公开(公告)号：US20150377700A1

公开(公告)日：2015-12-31

申请号：US14843847

申请日：2015-09-02

申请人： CANON KABUSHIKI KAISHA

发明人： Mineo Shimotsusa ,  Koichiro Iwata

IPC分类号： G01J1/44 ,  H01L27/146

CPC分类号： G01J1/44 ,  H01L27/14601 ,  H04N5/33 ,  H04N5/369 ,  H04N5/378

摘要： A photoelectric conversion apparatus according to one aspect of the present invention includes a first substrate including a photoelectric conversion region and a surrounding region, and a second substrate including a circuit for processing a signal from the photoelectric conversion region, and overlapping the first substrate. In this case, the circuit for processing a signal from the photoelectric conversion region includes a first circuit and a second circuit with a higher drive frequency than that of the first circuit. In an orthogonal projection, the second circuit is only provided in the photoelectric conversion region.

摘要翻译： 根据本发明的一个方面的光电转换装置包括：第一基板，包括光电转换区域和周围区域;以及第二基板，包括用于处理来自光电转换区域的信号的电路，并与第一基板重叠。 在这种情况下，用于处理来自光电转换区域的信号的电路包括具有比第一电路的驱动频率更高的驱动频率的第一电路和第二电路。 在正交投影中，第二电路仅设置在光电转换区域中。

公开(公告)号：US09209220B2

公开(公告)日：2015-12-08

申请号：US14577985

申请日：2014-12-19

申请人： CANON KABUSHIKI KAISHA

发明人： Masahiro Kobayashi ,  Mineo Shimotsusa

IPC分类号： H01L27/146 ,  H01L31/062 ,  H01L31/0224 ,  H01L31/18

CPC分类号： H01L27/1469 ,  H01L21/76898 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687 ,  H01L31/0224 ,  H01L31/18

摘要： The first face of the pad is situated between the front-side face of the second semiconductor substrate and a hypothetical plane including and being parallel to the front-side face, and a second face of the pad that is a face on the opposite side of the first face is situated between the first face and the front-side face of the second semiconductor substrate, and wherein the second face is connected to the wiring structure so that the pad is electrically connected to the circuit arranged in the front-side face of the second semiconductor substrate via the wiring structure.

摘要翻译： 衬垫的第一面位于第二半导体衬底的前侧面和包括平行于前侧面的假想平面之间，并且衬垫的第二面是与第二面相反侧的面 所述第一面位于所述第二半导体衬底的所述第一面和所述正面之间，并且所述第二面与所述布线结构连接，使得所述衬垫电连接到布置在所述第二面的正面侧的电路 所述第二半导体衬底经由所述布线结构。

公开(公告)号：US09094624B2

公开(公告)日：2015-07-28

申请号：US14265711

申请日：2014-04-30

申请人： CANON KABUSHIKI KAISHA

发明人： Mineo Shimotsusa ,  Takehiko Soda

IPC分类号： H04N5/225 ,  H04N5/355 ,  H01L27/146 ,  H01L31/062

CPC分类号： H04N5/355 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643

摘要： A solid-state imaging apparatus which includes a semiconductor portion having a first face on the light incident side and a second face opposite to the first face, and an optical system arranged on the first face, comprising a first semiconductor region of a first conductivity type provided on the second face side in the semiconductor region, a photoelectric conversion portion provided in the semiconductor portion so as to surround the first semiconductor region, including a second semiconductor region of the first conductivity type, and a gate electrode arranged between the first and the second semiconductor regions on the second face, for transferring a charge generated in the photoelectric conversion portion to the first semiconductor region, wherein the optical system is configured so that a light intensity in the second semiconductor region is higher than that in the first semiconductor region.

摘要翻译： 一种固态成像装置，包括：在光入射侧具有第一面的半导体部分和与该第一面相反的第二面;以及配置在该第一面上的光学系统，具有第一导电型的第一半导体区域 设置在所述半导体区域中的所述第二面侧的光电转换部，设置在所述半导体部中以围绕包括所述第一导电型的第二半导体区域的所述第一半导体区域的光电转换部，以及配置在所述第一和第 在第二面上的第二半导体区域，用于将在光电转换部分中产生的电荷转移到第一半导体区域，其中光学系统被配置为使得第二半导体区域中的光强度高于第一半导体区域中的光强度。

公开(公告)号：US09082820B2

公开(公告)日：2015-07-14

申请号：US14038484

申请日：2013-09-26

申请人： CANON KABUSHIKI KAISHA

发明人： Mineo Shimotsusa

IPC分类号： H01L21/44 ,  H01L21/768 ,  H01L23/00 ,  H01L23/48 ,  H01L27/146

CPC分类号： H01L21/768 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/05 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/1469 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/08145 ,  H01L2224/24147 ,  H01L2224/48463 ,  H01L2224/80896 ,  H01L2224/8203 ,  H01L2224/92 ,  H01L2924/12043 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/80001 ,  H01L2224/82

摘要： A first wiring part has an intermediate layer made of a material different from materials of a first insulator layer and a first conductor layer and located between the first insulator layer and the first conductor layer. In a step of forming a first hole, which penetrates through a first element part and the first insulator layer, from a side of a first semiconductor layer toward the first conductor layer, and forming a second hole, which penetrates through the first element part, the first wiring part, and a second insulator layer, from the side toward the second conductor layer, an etching condition of the first insulator layer when the first hole is formed is that an etching rate for the material of the first insulator layer under the etching condition is higher than an etching rate for the material of the intermediate layer under the etching condition.

摘要翻译： 第一布线部分具有由与第一绝缘体层和第一导体层的材料不同的材料制成并位于第一绝缘体层和第一导体层之间的中间层。 在从第一半导体层侧朝向第一导体层形成穿过第一元件部和第一绝缘体层的第一孔的工序中，形成穿过第一元件部的第二孔， 第一布线部分和第二绝缘体层，从一侧到第二导体层，当形成第一孔时第一绝缘体层的蚀刻条件是蚀刻下的第一绝缘体层的材料的蚀刻速率 条件高于蚀刻条件下中间层材料的蚀刻速率。

公开(公告)号：US20150179700A1

公开(公告)日：2015-06-25

申请号：US14625513

申请日：2015-02-18

申请人： CANON KABUSHIKI KAISHA

发明人： Takehito Okabe ,  Kentarou Suzuki ,  Takashi Usui ,  Taro Kato ,  Mineo Shimotsusa ,  Shunsuke Takimoto

IPC分类号： H01L27/146

CPC分类号： H01L27/14685 ,  H01L27/14629 ,  H01L27/14632 ,  H01L27/14641 ,  H01L27/14687 ,  H01L27/14689

摘要： A method for manufacturing a solid-state image pickup device is provided. The image pickup apparatus includes a photoelectric conversion portion disposed on the semiconductor substrate, a first insulating film over the photoelectric conversion portion, functioning as an antireflection film, a second insulating film on the first insulating film, disposed corresponding to the photoelectric conversion portion, and a waveguide having a clad and a core whose bottom is disposed on the second insulating film. The method includes forming an opening by anisotropically etching part of a member disposed over the photoelectric conversion portion, thereby forming the clad, and forming the core in the opening. In the method, the etching is performed under conditions where the etching rate of the second insulating film is lower than the etching rate of the member.

摘要翻译： 提供了一种用于制造固态图像拾取装置的方法。 图像拾取装置包括设置在半导体衬底上的光电转换部分，在光电转换部分上的第一绝缘膜，用作抗反射膜，第一绝缘膜上的与光电转换部相对设置的第二绝缘膜，以及 具有包层和芯的波导，其底部设置在第二绝缘膜上。 该方法包括通过各向异性蚀刻设置在光电转换部分上的部件的一部分形成开口，从而形成包层，并在开口中形成芯。 在该方法中，在第二绝缘膜的蚀刻速率低于构件的蚀刻速率的条件下进行蚀刻。

公开(公告)号：US20150118782A1

公开(公告)日：2015-04-30

申请号：US14577985

申请日：2014-12-19

申请人： CANON KABUSHIKI KAISHA

发明人： Masahiro Kobayashi ,  Mineo Shimotsusa

IPC分类号： H01L27/146

CPC分类号： H01L27/1469 ,  H01L21/76898 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687 ,  H01L31/0224 ,  H01L31/18

摘要： The first face of the pad is situated between the front-side face of the second semiconductor substrate and a hypothetical plane including and being parallel to the front-side face, and a second face of the pad that is a face on the opposite side of the first face is situated between the first face and the front-side face of the second semiconductor substrate, and wherein the second face is connected to the wiring structure so that the pad is electrically connected to the circuit arranged in the front-side face of the second semiconductor substrate via the wiring structure.

摘要翻译： 衬垫的第一面位于第二半导体衬底的前侧面和包括平行于前侧面的假想平面之间，并且衬垫的第二面是与第二面相反侧的面 所述第一面位于所述第二半导体衬底的所述第一面和所述正面之间，并且所述第二面与所述布线结构连接，使得所述衬垫电连接到布置在所述第二面的正面侧的电路 所述第二半导体衬底经由所述布线结构。

公开(公告)号：US08953076B2

公开(公告)日：2015-02-10

申请号：US14137100

申请日：2013-12-20

申请人： Canon Kabushiki Kaisha

发明人： Hajime Ikeda ,  Yoshihisa Kabaya ,  Takanori Watanabe ,  Takeshi Ichikawa ,  Mineo Shimotsusa

IPC分类号： H04N3/14 ,  H04N5/335 ,  G01J1/44 ,  H01J40/14 ,  H01L27/148 ,  H01L31/0224 ,  H01L27/146

CPC分类号： H01L31/022408 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689 ,  H04N5/335

摘要： A photoelectric conversion device comprises a p-type region, an n-type buried layer formed under the p-type region, an element isolation region, and a channel stop region which covers at least a lower portion of the element isolation region, wherein the p-type region and the buried layer form a photodiode, and a diffusion coefficient of a dominant impurity of the channel stop region is smaller than a diffusion coefficient of a dominant impurity of the buried layer.

摘要翻译： 光电转换装置包括p型区域，在p型区域下形成的n型掩埋层，元件隔离区域和覆盖元件隔离区域的至少下部的沟道阻挡区域，其中， p型区域和掩埋层形成光电二极管，沟道阻挡区域的主要杂质的扩散系数小于掩埋层的主要杂质的扩散系数。

公开(公告)号：US08890331B2

公开(公告)日：2014-11-18

申请号：US13774150

申请日：2013-02-22

申请人： Canon Kabushiki Kaisha

发明人： Mineo Shimotsusa ,  Takeshi Ichikawa ,  Yasuhiro Sekine

IPC分类号： H01L27/142 ,  H01L27/146 ,  H01L31/024

CPC分类号： H01L27/14634 ,  H01L24/05 ,  H01L27/14618 ,  H01L27/14621 ,  H01L27/14687 ,  H01L27/1469 ,  H01L31/024 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/48463 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/13091 ,  H01L2924/351 ,  H01L2924/00

摘要： A photoelectric conversion device includes a first semiconductor substrate including a photoelectric conversion unit for generating a signal charge in accordance with an incident light, and a second semiconductor substrate including a signal processing unit for processing an electrical signal on the basis of the signal charge generated in the photoelectric conversion unit. The signal processing unit is situated in an orthogonal projection area from the photoelectric conversion unit to the second semiconductor substrate. A multilayer film including a plurality of insulator layers is provided between the first semiconductor substrate and the second semiconductor substrate. The thickness of the second semiconductor substrate is smaller than 500 micrometers. The thickness of the second semiconductor substrate is greater than the distance from the second semiconductor substrate and a light-receiving surface of the first semiconductor substrate.

摘要翻译： 光电转换装置包括：第一半导体衬底，其包括用于根据入射光产生信号电荷的光电转换单元;以及第二半导体衬底，其包括信号处理单元，用于根据产生的信号电荷来处理电信号 光电转换单元。 信号处理单元位于从光电转换单元到第二半导体基板的正交投影区域中。 在第一半导体衬底和第二半导体衬底之间设置包括多个绝缘体层的多层膜。 第二半导体衬底的厚度小于500微米。 第二半导体衬底的厚度大于距第二半导体衬底和第一半导体衬底的光接收表面的距离。

公开(公告)号：US20140306309A1

公开(公告)日：2014-10-16

申请号：US14313243

申请日：2014-06-24

申请人： Canon Kabushiki Kaisha

发明人： Taro Kato ,  Mineo Shimotsusa ,  Hiroaki Sano ,  Takeshi Ichikawa ,  Yasuhiro Sekine ,  Mahito Shinohara ,  Genzo Momma

IPC分类号： H01L27/146

CPC分类号： H01L27/14627 ,  H01L27/14621 ,  H01L27/14629 ,  H01L27/1463

摘要： A photoelectric conversion apparatus includes a semiconductor substrate having a photoelectric conversion portion. An insulator is provided on the semiconductor substrate. The insulator has a hole corresponding to the photoelectric conversion portion. A waveguide member is provided in the hole. An in-layer lens is provided on a side of the waveguide member farther from the semiconductor substrate. A first intermediate member is provided between the waveguide member and the in-layer lens. The first intermediate member has a lower refractive index than the in-layer lens.

摘要翻译： 光电转换装置包括具有光电转换部分的半导体衬底。 绝缘体设置在半导体衬底上。 绝缘体具有与光电转换部对应的孔。 波导构件设置在孔中。 在距离半导体衬底更远的波导构件的一侧设置有层内透镜。 第一中间构件设置在波导构件和内层透镜之间。 第一中间构件具有比层内透镜低的折射率。