公开(公告)号：US20160072054A1

公开(公告)日：2016-03-10

申请号：US14479353

申请日：2014-09-07

申请人： Yimin Guo

发明人： Yimin Guo

IPC分类号： H01L43/12 ,  H01L43/08 ,  H01L43/10 ,  H01L43/02

CPC分类号： H01L43/12 ,  H01L27/228

摘要： A method to make magnetic random access memory with extremely small cell size is provided. Using atomic layer deposition (ALD) technique, a very thin film of hard mask material is uniformly grown on the vertical spatial walls of a pre-form. Stand alone hard mask is formed after removing the pre-form. Array of magnetic memory cells are formed by reactive ion etch (RIE) or ion milling using such small hard mask. This way, the dimension of the hard mask is no longer limited by photolithography tool capability, instead, it is controlled by ALD-grown hard mask film thickness which can be made extremely thin.

摘要翻译： 提供了一种制造具有极小单元尺寸的磁随机存取存储器的方法。 使用原子层沉积（ALD）技术，将非常薄的硬掩模材料均匀地生长在预成型件的垂直空间壁上。 在取下预制件后，形成独立的硬面罩。 通过使用这种小的硬掩模的反应离子蚀刻（RIE）或离子研磨形成磁存储单元的阵列。 这样，硬掩模的尺寸不再受光刻工具的能力限制，而是由ALD生长的硬掩模膜厚度控制，这可以使其非常薄。

公开(公告)号：US20160064651A1

公开(公告)日：2016-03-03

申请号：US14475575

申请日：2014-09-03

申请人： Yimin Guo

发明人： Yimin Guo

IPC分类号： H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L43/02

CPC分类号： H01L43/08 ,  H01L43/12

摘要： This invention is about a method to make three-terminal spin transfer torque transistor magnetic random access memory (ST3-MRAM) cell using plasma based ion implantation. The core memory stack of such ST3-MRAM cell contains a bottom digit line (or VIA), a thick dielectric insulating layer, a memory layer, another thin dielectric layer, and a magnetic reference layer on the top. After the formation of the top magnetic reference pillar by photolithography patterning and etching, the outside region of the magnetic memory layer is converted to a non-magnetic conducting lead by heavy doping of boron ions generated by plasma from boron hydrogen (BxH3x) containing gas.

摘要翻译： 本发明是关于使用等离子体离子注入制造三端自旋转移转矩晶体管磁性随机存取存储器（ST3-MRAM）单元的方法。 这种ST3-MRAM单元的核心存储器堆栈包含顶部的底部数字线（或VIA），厚介质绝缘层，存储层，另一个薄介电层和磁性参考层。 在通过光刻图案和蚀刻形成顶部磁性参考柱之后，通过从含有氢气（BxH 3 x）的气体的等离子体产生的硼离子的重掺杂，将磁存储层的外部区域转换为非磁性导电引线。

公开(公告)号：US20150364676A1

公开(公告)日：2015-12-17

申请号：US14301335

申请日：2014-06-11

申请人： Yimin Guo

发明人： Yimin Guo

IPC分类号： H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L43/02

CPC分类号： H01L43/08 ,  H01L43/12

摘要： This invention is about a three-terminal spin transistor magnetic random access memory and the method to make it with a narrow foot print. The first terminal, a bit line, is connected to the top magnetic reference layer, and the second terminal is located at the middle memory layer which is connected to the underneath CMOS control circuit through VIA and the third one, a digital line, is a voltage gate with a narrow point underneath the memory layer across an insulating layer which is used to reduce the write current when it is turned on. The fabrication includes formation of a large VIA base, formation of digital line, formation of memory cell & VIA connection and formation of the top bit line. Dual photolithography patterning and hard mask etch are used to form the digital line pillar and small memory pillar. Oxygen plasma ion implantation is used to define an insulating region underneath the memory cell and metallic ion implantation is used to convert a buried dielectric VIA base outside the center memory pillar into an electric conductive path between middle memory cell and underneath CMOS device.

摘要翻译： 本发明涉及一种三端旋转晶体管磁性随机存取存储器以及使其具有窄脚印的方法。 第一端子位线连接到顶部磁性参考层，并且第二端子位于通过VIA连接到下面的CMOS控制电路的中间存储器层，第三端子是数字线路 在绝缘层上的存储层下方具有窄点的电压栅极，该绝缘层用于在接通时减小写入电流。 该制造包括形成大的VIA基座，数字线的形成，存储器单元的形成和VIA连接以及顶部位线的形成。 使用双光刻图案和硬掩模蚀刻来形成数字线柱和小存储柱。 使用氧等离子体离子注入来限定存储器单元下方的绝缘区域，并且使用金属离子注入将中心存储器柱外部的掩埋电介质VIA基底转换成中间存储器单元和CMOS器件之下的导电路径。

公开(公告)号：US20150340602A1

公开(公告)日：2015-11-26

申请号：US14285637

申请日：2014-05-23

申请人： Yimin Guo

发明人： Yimin Guo

IPC分类号： H01L43/12 ,  H01L43/02 ,  H01L43/10 ,  H01L43/08

CPC分类号： H01L43/12 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： A method to form a small magnetic random access memory (MRAM) cell using collimated oxygen ion implantation is provided. With a proper control of the bias voltage and collimation angle, oxygen ions are impinged into the magnetic memory layers with a desired energy and bombardment angle, yielding a sharp oxygen boundary around the memory cell. After a high temperature anneal, a dielectric matrix with good metal-oxide bonding is formed within the oxygen implanted memory region and thus forming a small MRAM cell in the mask protected area.

摘要翻译： 提供了使用准直氧离子注入形成小型磁性随机存取存储器（MRAM）单元的方法。 通过对偏置电压和准直角的适当控制，氧离子以期望的能量和轰击角撞击到磁存储层中，在存储器单元周围产生尖锐的氧边界。 在高温退火之后，在氧注入存储区域内形成具有良好金属氧化物键合的介质矩阵，从而在掩模保护区域中形成小的MRAM单元。

公开(公告)号：US20140254252A1

公开(公告)日：2014-09-11

申请号：US14200003

申请日：2014-03-06

申请人： Yimin Guo

发明人： Yimin Guo

IPC分类号： G11C11/16

CPC分类号： G11C11/1673 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/5607 ,  H01F10/3263 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/08

摘要： A STT-MRAM comprises apparatus, and method of operating a double-MTJ magnetoresistive memory and a plurality of magnetoresistive memory element having a first recording layer which has an interface interaction with an underneath dielectric functional layer and having a second recording layer which has no interface interaction with an underneath dielectric functional layer. The energy switch barrier of the first recording layer is reduced under an electric field applying along a perpendicular direction of the functional with a proper voltage on a digital line from a control circuitry; accordingly, the magnetization of the first recording layer is readily reversible in a low spin-transfer switching current while the magnetization of the second recording layer is readily reversible in a high spin-transfer switching current, enabling two separate bits recording in a double MTJ stack.

摘要翻译： STT-MRAM包括装置和操作双MTJ磁阻存储器的方法和具有第一记录层的多个磁阻存储元件，该第一记录层与下介质功能层具有界面相互作用，并具有不具有界面的第二记录层 与下面的介电功能层的相互作用。 在来自控制电路的数字线路上沿着具有适当电压的功能的垂直方向施加的电场下，第一记录层的能量开关势垒减小; 因此，第一记录层的磁化在低自旋转移切换电流中容易可逆，同时第二记录层的磁化在高自旋转移开关电流中容易可逆，使得能够在双MTJ堆叠中记录两个单独的位 。

公开(公告)号：US20140252439A1

公开(公告)日：2014-09-11

申请号：US14198589

申请日：2014-03-06

申请人： Yimin Guo

发明人： Yimin Guo

IPC分类号： H01L43/04 ,  H01L43/14

CPC分类号： H01L43/14 ,  G11C11/1675 ,  G11C11/18 ,  H01L27/228 ,  H01L43/04 ,  H01L43/08 ,  H01L43/12

摘要： A spin-transfer-torque magnetoresistive memory comprises apparatus and method of manufacturing a three terminal magnetoresistive memory element having highly conductive bottom electrodes overlaid on top of a SHE-metal layer in the regions outside of an MTJ stack. The memory cell comprises a bit line positioned adjacent to selected ones of the plurality of magnetoresistive memory elements to supply a reading current across the magnetoresistive element stack and two highly conductive bottom electrodes overlaid and electrically contacting on top of a SHE-metal layer in the outside of an MTJ region and to supply a bi-directional spin Hall effect recording current, and accordingly to switch the magnetization of the recording layer. Thus magnetization of a recording layer can be readily switched or reversed to the direction in accordance with a direction of a current along the SHE-metal layer by applying a low write current.

摘要翻译： 自旋转移 - 转矩磁阻存储器包括制造具有高导电性底部电极的三端子磁阻存储元件的装置和方法，其覆盖在MTJ堆叠外的区域中的SHE-金属层的顶部。 存储单元包括位于与多个磁阻存储元件中选定的磁阻存储元件相邻的位线，以在磁阻元件堆叠上提供读取电流，并且两个高度导电的底部电极重叠并电接触外部的SHE-金属层的顶部 并提供双向旋转霍尔效应记录电流，并因此切换记录层的磁化。 因此，通过施加低写入电流，记录层的磁化可以容易地根据沿着SHE-金属层的电流的方向切换或反向。

公开(公告)号：US20140217526A1

公开(公告)日：2014-08-07

申请号：US14149757

申请日：2014-01-07

申请人： Yimin Guo

发明人： Yimin Guo

IPC分类号： H01L43/02

CPC分类号： H01L27/224 ,  G11C11/02 ,  G11C11/161 ,  H01L27/22 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10

摘要： A perpendicular magnetoresistive element comprises anovel buffer layer provided on a surface of the recording layer, which is opposite to a surface of the recording layer where the tunnel barrier layer is provided, wherein at least the portion of the buffer layer interfacing to the recording layer contains a rocksalt crystal structure having the (100) plane parallel to the substrate plane and at least a portion of the buffer layer comprises a doped element having conductivity enhancement and the perpendicular resistance of the buffer layer is relatively small than that of the tunnel barrier layer. The invention preferably includes materials, configurations and processes of perpendicular magnetoresistive elements suitable for perpendicular spin-transfer torque MRAM applications

摘要翻译： 垂直磁阻元件包括设置在记录层的与设置有隧道势垒层的记录层的表面相对的表面上的缓冲层，其中至少与记录层相接的缓冲层的部分包含 具有（100）平面平行于衬底平面的岩盐晶体结构，并且缓冲层的至少一部分包括具有导电性增强的掺杂元素，并且缓冲层的垂直电阻相对于隧道势垒层的垂直电阻小。 本发明优选地包括适用于垂直旋转传递转矩MRAM应用的垂直磁阻元件的材料，配置和工艺

公开(公告)号：US08514506B1

公开(公告)日：2013-08-20

申请号：US13371252

申请日：2012-02-10

申请人： Shaoping Li ,  Yimin Guo ,  Francis H. Liu ,  Sining Mao

发明人： Shaoping Li ,  Yimin Guo ,  Francis H. Liu ,  Sining Mao

IPC分类号： G11B5/09 ,  G11B20/10

CPC分类号： G11B5/3954 ,  G11B5/012 ,  G11B20/10009 ,  G11B20/10037 ,  G11B20/10046 ,  G11B20/10074 ,  G11B20/10175 ,  G11B20/10222 ,  G11B20/10231 ,  G11B20/10277 ,  G11B20/10305 ,  G11B20/10314 ,  G11B20/10379 ,  G11B20/1258 ,  G11B2220/2516

摘要： A disk drive is disclosed comprising a disk having a plurality of data tracks, and a head actuated over the disk, the head comprising a first read element and a second read element. A data track is read to generate a first read signal emanating from the first read element and a second read signal emanating from the second read element. The first read signal is delayed in continuous time relative to the second read signal to generate a delayed read signal, and the second read signal is combined with the delayed read signal to generate a combined read signal. An estimated data sequence is detected from the combined read signal.

摘要翻译： 公开了一种磁盘驱动器，其包括具有多个数据磁道的磁盘，以及在盘上驱动的磁头，磁头包括第一读取元件和第二读取元件。 读取数据磁道以产生从第一读取元件发出的第一读取信号和从第二读取元件发出的第二读取信号。 第一读取信号相对于第二读取信号以连续时间延迟，以产生延迟的读取信号，并且将第二读取信号与延迟的读取信号组合以产生组合的读取信号。 从组合的读取信号中检测估计的数据序列。

公开(公告)号：US08277669B1

公开(公告)日：2012-10-02

申请号：US12643954

申请日：2009-12-21

申请人： Tsung Yuan Chen ,  Yimin Guo ,  Jinqiu Zhang ,  Ut Tran

发明人： Tsung Yuan Chen ,  Yimin Guo ,  Jinqiu Zhang ,  Ut Tran

IPC分类号： B44C1/22

CPC分类号： G11B5/3116 ,  G11B5/315 ,  G11B5/3163 ,  Y10T29/49046

摘要： A method and system for providing a pole of magnetic transducer having an air-bearing surface (ABS) are described. Leading shield and planarization stop layers are provided. Portions of the planarization stop and shield layers distal from the ABS location are removed, providing a depression forming a bevel. The bevel has an angle greater than zero and less than ninety degrees. An intermediate layer having a top surface substantially perpendicular to the ABS location is provided. Part of the intermediate layer is removed, forming a trench having a bottom corresponding to the leading shield and a location and profile corresponding to the pole. A nonmagnetic layer is provided at least partially in the trench. The pole with a leading edge bevel corresponding to the bevel is provided in the trench. A capping layer covering the pole is provided, at least part of the intermediate layer removed, and a wrap-around shield provided.

摘要翻译： 描述了一种用于提供具有空气轴承表面（ABS）的磁换能器极的方法和系统。 提供了领先的屏蔽和平坦化停止层。 除去远离ABS位置的平坦化停止和屏蔽层的部分，提供形成斜面的凹陷。 斜面角度大于零，小于九十度。 提供具有基本上垂直于ABS位置的顶表面的中间层。 中间层的一部分被去除，形成具有对应于前屏蔽的底部的沟槽和对应于极的位置和轮廓。 至少部分地在沟槽中提供非磁性层。 在沟槽中设置有与斜面相对应的前缘斜面的极。 提供覆盖极的覆盖层，去除中间层的至少一部分和设置的环绕护罩。

公开(公告)号：US08203332B2

公开(公告)日：2012-06-19

申请号：US12214925

申请日：2008-06-24

申请人： Yimin Guo ,  Grace Gorman

发明人： Yimin Guo ,  Grace Gorman

IPC分类号： G01B7/30

CPC分类号： G01P3/488 ,  G01D5/147 ,  G01D5/2451

摘要： The invention discloses a method and apparatus for determining the rotational status of a gear wheel whether or not it is actually turning. A key feature is the magnetic angle sensor that is used. Said sensor comprises a bridge structure of four MR devices in a square array. The direction of the pinned reference layer is the same for all four devices and lies along one of the diagonals of said square array. A single wafer process is used to manufacture the invented device.

摘要翻译： 本发明公开了一种用于确定齿轮的旋转状态的方法和装置，无论其是否正在转动。 一个关键的特征是使用的磁角传感器。 所述传感器包括方阵阵列中的四个MR器件的桥结构。 钉扎参考层的方向对于所有四个装置是相同的，并且位于所述正方形阵列的一个对角线上。 使用单个晶片工艺来制造本发明的器件。