公开(公告)号：US20060172548A1

公开(公告)日：2006-08-03

申请号：US11050261

申请日：2005-02-02

申请人： Chih-Ning Wu ,  Charlie Lee ,  Kuan-Yang Liao

发明人： Chih-Ning Wu ,  Charlie Lee ,  Kuan-Yang Liao

IPC分类号： H01L21/336 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/02071 ,  H01L21/0206 ,  H01L21/28088 ,  H01L21/28194 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/518

摘要： A method of cleaning a wafer, adapted for a patterned gate structure. The gate structures comprise a gate dielectric layer, a nitrogen-containing barrier layer and a silicon-containing gate layer sequentially stacked over the substrate. The method includes cleaning the substrate with phosphoric acid solution and hydrofluoric acid solution so that silicon nitride residues formed in a reaction between the nitrogen-containing barrier layer and the silicon-containing gate layer can be removed and the amount of pollutants and particles can be reduced. Ultimately, the yield of the process as well as the quality and reliability of the device are improved.

摘要翻译： 一种适用于图案化栅极结构的清洁晶片的方法。 栅极结构包括依次层叠在衬底上的栅极介电层，含氮势垒层和含硅栅极层。 该方法包括用磷酸溶液和氢氟酸溶液清洗基板，使得可以除去在含氮阻挡层和含硅栅层之间的反应中形成的氮化硅残留物，并且可以减少污染物和颗粒的量 。 最终，改善了工艺的产量以及设备的质量和可靠性。

公开(公告)号：US20060110688A1

公开(公告)日：2006-05-25

申请号：US10993593

申请日：2004-11-19

申请人： Chung-Ju Lee ,  Chih-Ning Wu ,  Kuan-Yang Liao

发明人： Chung-Ju Lee ,  Chih-Ning Wu ,  Kuan-Yang Liao

IPC分类号： G03F7/36

CPC分类号： G03F7/405 ,  G03F7/40

摘要： An etching process compatible with DUV lithography is described. A mask layer is previously formed over a material layer to be etched through a DUV lithography process of 193 nm or 157 nm. Then, plasma etching is performed to pattern the material layer using the mask layer as an etching mask, wherein the etching gas causes a protective layer to form on the surface of the mask layer. The etching gas of the plasma etching includes at least a halogen-containing gas and Xe, wherein the halogen can be F, Cl, Br or a combination thereof.

摘要翻译： 描述了与DUV光刻相兼容的蚀刻工艺。 预先通过193nm或157nm的DUV光刻工艺在待蚀刻的材料层上形成掩模层。 然后，进行等离子体蚀刻，使用掩模层作为蚀刻掩模对材料层进行图案化，其中蚀刻气体在掩模层的表面上形成保护层。 等离子体蚀刻的蚀刻气体至少包含含卤素的气体和Xe，其中卤素可以是F，Cl，Br或其组合。

公开(公告)号：US06767825B1

公开(公告)日：2004-07-27

申请号：US10356754

申请日：2003-02-03

申请人： Chih-Ning Wu

发明人： Chih-Ning Wu

IPC分类号： H01L214763

CPC分类号： H01L21/76811 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/76813

摘要： First of all, a breakthrough process is performed for removing the polymer and oxidized residues remained on top surface of the hard-mask layers, wherein the breakthrough process utilizes a CFx-based mixed-gas, such as Ar/O2/CF4, to slightly flush out the top surface of the hard-mask layers so as to strip the polymer and oxidized residues remained thereon. Afterward, an etching process is performed to etch through the hard-mask layers until a predetermined thickness of the dielectric layer. Finally, another etching process is performed to etch through the hard-mask layer and the dielectric layer and form the damascene structure in the dielectric layer, wherein this etching process utilizes the mixed gas having chlorine, such as O2/Cl2.

摘要翻译： 首先，进行突破性处理以去除残留在硬掩模层的顶表面上的聚合物和氧化残余物，其中突破过程利用基于CF x的混合气体，例如Ar / O 2 / CF 4稍微 冲洗掉硬掩模层的顶表面，以剥离聚合物并残留在其上的氧化残余物。 之后，进行蚀刻处理以蚀刻穿过硬掩模层直到电介质层的预定厚度。 最后，进行另一蚀刻工艺以蚀刻通过硬掩模层和电介质层并在电介质层中形成镶嵌结构，其中该蚀刻工艺利用具有氯的混合气体，例如O 2 / Cl 2。

公开(公告)号：US06733597B2

公开(公告)日：2004-05-11

申请号：US09841817

申请日：2001-04-24

申请人： Chih-Ning Wu ,  Sun-Chieh Chien

发明人： Chih-Ning Wu ,  Sun-Chieh Chien

IPC分类号： B08B300

CPC分类号： H01L21/76814 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/76807 ,  H01L21/76838 ,  Y10S134/902 ,  Y10S438/906

摘要： A method is provided for cleaning a dual damascene structure. A first metal layer, a cap layer, and a dielectric layer are formed on a substrate in sequence. Then a dual damascene opening is formed in the dielectric layer and the cap layer exposing the first metal layer. Next, a post-etching cleaning step is carried out to clean the dual damascene opening using a fluorine-based solvent. Then, an argon gas plasma is sputtered to clean the dual damascene opening before a second metal layer fills in the dual damascene opening.

摘要翻译： 提供了一种清洗双镶嵌结构的方法。 依次在基板上形成第一金属层，盖层和电介质层。 然后在电介质层中形成双镶嵌开口，并且覆盖层露出第一金属层。 接下来，进行后蚀刻清洗工序，使用氟系溶剂清洗双镶嵌开口。 然后，在第二金属层填充到双镶嵌开口之前，溅射氩气等离子体以清洁双镶嵌开口。

公开(公告)号：US06692580B2

公开(公告)日：2004-02-17

申请号：US10407626

申请日：2003-04-04

申请人： Chih-Ning Wu ,  Sun-Chieh Chien

发明人： Chih-Ning Wu ,  Sun-Chieh Chien

IPC分类号： B08B300

CPC分类号： H01L21/76814 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/76807 ,  H01L21/76838 ,  Y10S134/902 ,  Y10S438/906

摘要： A method of cleaning a dual damascene structure. A first metal layer, a cap layer, and a dielectric layer are formed on a substrate in sequence. Then a dual damascene opening is formed in the dielectric layer and the cap layer, exposing the first metal layer. Then, a post-etching cleaning step is carried out to clean the dual damascene opening, and there are two types of cleaning methods. The first method uses a fluorine-based solvent to clean the dual damascene opening. An alternative cleaning method uses a hydrogen peroxide based solvent at a high temperature, followed by a hydrofluoric acid solvent cleaning step. Then, an argon gas plasma is sputtered to clean the dual damascene opening before a second metal layer fills in the dual damascene opening.

摘要翻译： 一种清洗双镶嵌结构的方法。 依次在基板上形成第一金属层，盖层和电介质层。 然后在电介质层和盖层中形成双镶嵌开口，露出第一金属层。 然后，执行后蚀刻清洁步骤以清洁双镶嵌开口，并且存在两种类型的清洁方法。 第一种方法使用氟类溶剂清洗双镶嵌开口。 另一种清洗方法是在高温下使用基于过氧化氢的溶剂，然后使用氢氟酸溶剂清洗步骤。 然后，在第二金属层填充到双镶嵌开口之前，溅射氩气等离子体以清洁双镶嵌开口。

公开(公告)号：US06554002B2

公开(公告)日：2003-04-29

申请号：US09789349

申请日：2001-02-21

申请人： Chih-Ning Wu ,  Cheng-Yuan Tsai ,  Chan-Lon Yang

发明人： Chih-Ning Wu ,  Cheng-Yuan Tsai ,  Chan-Lon Yang

IPC分类号： H01L21302

CPC分类号： H01L21/31111 ,  H01L21/31116 ,  H01L21/76807

摘要： A method for removing fluorine-containing etching residues during dual damascene process comprises providing a dual damascene structure having a copper conductor structure therein, a cap layer formed on the copper conductor structure and the dual damascene structure, and a low dielectric constant dielectric layer on the cap layer. The low dielectric constant dielectric layer formed by spin-on polymer method has at least an opening above the copper conductor structure. The cap layer is etched by fluorine-containing plasma to expose the copper conductor structure. The dual damascene structure is cleaned with a solvent and then the fluorine-containing etching residues are removed by plasma sputtering treatment or baking, or by a combination of both. The addition of baking and plasma sputtering treatment can prevent poor adhesion between the subsequent metal diffusion barrier layer and the low dielectric constant dielectric layer.

摘要翻译： 一种在双镶嵌工艺中去除含氟蚀刻残留物的方法包括提供一种其中具有铜导体结构的双镶嵌结构，在铜导体结构上形成的盖层和双镶嵌结构，以及在其上的低介电常数介电层 盖层。 通过旋涂聚合物方法形成的低介电常数介电层在铜导体结构之上至少有一个开口。 盖层被含氟等离子体蚀刻以暴露铜导体结构。 双重镶嵌结构用溶剂清洗，然后通过等离子体溅射处理或烘烤除去含氟蚀刻残渣，或通过两者的组合。 添加烘烤和等离子体溅射处理可以防止后续金属扩散阻挡层和低介电常数介电层之间的粘附性差。

公开(公告)号：US06511916B1

公开(公告)日：2003-01-28

申请号：US10036363

申请日：2002-01-07

申请人： Chih-Ning Wu

发明人： Chih-Ning Wu

IPC分类号： H01L214763

CPC分类号： G03F7/427 ,  H01L21/31138 ,  H01L21/76807

摘要： First of all, a semiconductor substrate having a dielectric layer thereon is provided. Then a photoresist layer is formed and defined on the dielectric layer. Afterward, an etching process is performed by way of using the photoresist layer as an etching mask to etch through the dielectric layer, so as to form a trench and a polymer layer on the photoresist layer. Subsequently, performing a removing process with two steps strips the photoresist layer and the polymer layer thereof, whereby this removing process with two steps can keep the trench profile and avoid the residues of the polymer layer.

摘要翻译： 首先，提供其上具有电介质层的半导体衬底。 然后在电介质层上形成并限定光致抗蚀剂层。 之后，通过使用光致抗蚀剂层作为蚀刻掩模来进行蚀刻工艺，以蚀刻通过介电层，从而在光致抗蚀剂层上形成沟槽和聚合物层。 随后，通过两个步骤进行去除处理剥离光致抗蚀剂层及其聚合物层，由此通过两个步骤的这种去除过程可以保持沟槽轮廓并避免聚合物层的残留物。

公开(公告)号：US06495472B2

公开(公告)日：2002-12-17

申请号：US09791027

申请日：2001-02-21

申请人： Chih-Ning Wu ,  Chan-Lon Yang

发明人： Chih-Ning Wu ,  Chan-Lon Yang

IPC分类号： H01L21302

CPC分类号： H01L21/76838 ,  H01L21/31116

摘要： A method for avoiding erosion of a conductor structure during a procedure of removing etching residues is provided. The method provides a semiconductor structure and the conductor structure formed therein. A cap layer is formed on the conductor structure and the semiconductor and a dielectric layer formed thereon. The dielectric layer and the cap layer are then etched to partially expose the conductor structure. The etching residues are removed with an amine-containing solution and the amine-containing solution is removed with an intermediate solvent to avoid erosion of the exposed conductor structure. As a key step of the present invention, the intermediate solvent comprises N-methylpyrrolidone or isopropyl alcohol and can protect the conductor structure from erosion.

摘要翻译： 提供了一种在去除蚀刻残留物的过程中避免导体结构侵蚀的方法。 该方法提供半导体结构和其中形成的导体结构。 在导体结构和半导体上形成覆盖层和形成在其上的电介质层。 然后对介电层和盖层进行蚀刻以部分地暴露导体结构。 蚀刻残余物用含胺溶液除去，并且用中间体溶剂除去含胺溶液以避免暴露的导体结构的侵蚀。 作为本发明的关键步骤，中间体溶剂包括N-甲基吡咯烷酮或异丙醇，并且可以保护导体结构免受侵蚀。

公开(公告)号：US06303482B1

公开(公告)日：2001-10-16

申请号：US09597762

申请日：2000-06-19

申请人： Chih-Ning Wu ,  Chan-Lon Yang

发明人： Chih-Ning Wu ,  Chan-Lon Yang

IPC分类号： H01L213205

CPC分类号： H01L21/02071 ,  H01L21/02052 ,  H01L21/31138 ,  H01L21/32137

摘要： A method for cleaning the surface of a semiconductor wafer is disclosed. A plasma ashing process is performed on the surface of the semiconductor wafer. The plasma ashing process is performed in a chamber that contains oxygen and carbon tetrafluoride (CF4). An ozone-containing deionized (DI) water cleaning procedure, an amine-based solvent cleaning procedure and a fluoride-based solvent cleaning procedure are then performed to clean the surface of the semiconductor wafer without over-etching the silicon oxide of the street. Finally, an oxygen plasma cleaning process is performed to remove any residual photo-resist.

摘要翻译： 公开了一种用于清洁半导体晶片表面的方法。 在半导体晶片的表面上进行等离子体灰化处理。 等离子体灰化过程在包含氧和四氟化碳（CF4）的室中进行。 然后执行含臭氧的去离子水（DI）水清洗程序，胺基溶剂清洗程序和基于氟化物的溶剂清洗程序，以清洁半导体晶片的表面，而不会过度蚀刻街道的氧化硅。 最后，进行氧等离子体清洁处理以除去任何残留的光刻胶。