公开(公告)号：US6137213A

公开(公告)日：2000-10-24

申请号：US176150

申请日：1998-10-21

Applicant: Curtis D. Moyer ,  Peter A. Smith ,  Robert H. Reuss ,  Troy A. Trottier ,  Steven A. Voight ,  Diane A. Carrillo ,  Kevin J. Nordquist ,  Jaynal A. Molla ,  David W. Jacobs ,  Kathleen A. Tobin

Inventor： Curtis D. Moyer ,  Peter A. Smith ,  Robert H. Reuss ,  Troy A. Trottier ,  Steven A. Voight ,  Diane A. Carrillo ,  Kevin J. Nordquist ,  Jaynal A. Molla ,  David W. Jacobs ,  Kathleen A. Tobin

IPC: H01J1/304 ,  H01J29/46 ,  H01J29/94 ,  H01J31/12 ,  H01J1/02

CPC classification number: H01J29/467 ,  H01J31/127

Abstract: A field emission device (100, 150) includes a cathode plate (102, 180) having electron emitters (116), an anode plate (104, 170) having a phosphor (107, 207, 307, 407) activated by electrons (119) emitted by electron emitters (116), and a vacuum bridge focusing structure (118, 158, 218, 318) for focusing electrons (119) emitted by electron emitters (116). Vacuum bridge focusing structure (118, 158, 218, 318) has landings (121, 122, 221, 322), which are attached to cathode plate (102, 180), and further has bridges (120, 220, 320), which extend above and beyond landings (121, 122, 221, 322, 421) to provide a self-supporting structure that is spaced apart from cathode plate (102, 180).

Abstract translation: 场致发射器件（100,150）包括具有电子发射器（116）的阴极板（102,180），具有由电子激活的荧光体（107,207,307,407）的阳极板（104,170） ）和由电子发射器（116）发射的用于聚焦电子（119）的真空电桥聚焦结构（118,158,218,318）。 真空桥聚焦结构（118,158,218,318）具有连接到阴极板（102,180）上的平台（121,122,221,322），并且还具有桥梁（120,220,320），其中 （121,122,221,322,421）之上和之外延伸以提供与阴极板（102,180）间隔开的自支撑结构。

公开(公告)号：US5940683A

公开(公告)日：1999-08-17

申请号：US588470

申请日：1996-01-18

Applicant: Paige M. Holm ,  Chan-Long Shieh ,  Curtis D. Moyer

Inventor： Paige M. Holm ,  Chan-Long Shieh ,  Curtis D. Moyer

IPC: H01L21/60 ,  G09F9/33 ,  H01L25/16 ,  H01L27/15 ,  H01L33/00 ,  H01L21/00

CPC classification number: H01L25/167 ,  G09F9/3026 ,  H01L25/162 ,  H01L27/156 ,  H01L2924/0002 ,  H01L33/0079

Abstract: A light emitting diode display package and method of fabricating a light emitting diode (LED) display package including a LED array display chip, fabricated of an array of LEDs, formed on a substrate, having connection pads positioned about the perimeter of the LED array display chip, a separate silicon driver chip having connection pads routed to an uppermost surface, positioned to cooperatively engage those of the display chip when properly registered and interconnected using wafer level processing technology. The display chip being flip chip mounted to the driver chip and having a layer of interchip bonding dielectric positioned between the space defined by the display chip and the driver chip. The LED display and driver chip package subsequently having selectively removed the substrate onto which the LED array was initially formed, thereby exposing the connection pads of the display chip and a remaining indium-gallium-aluminum-phosphide (InGaAlP) epilayer. The light emitted from the LED display chip, being emitted through the remaining indium-gallium-aluminum-phosphide (InGaAlP) epilayer of the display chip.

Abstract translation: 一种制造发光二极管（LED）显示封装的发光二极管显示封装和方法，所述发光二极管（LED）显示封装包括形成在基板上的由阵列LED制成的LED阵列显示芯片，所述LED阵列显示芯片具有围绕所述LED阵列显示器周边定位的连接焊盘 芯片，具有连接到最上表面的连接焊盘的单独的硅驱动器芯片，定位成当使用晶片级处理技术正确地注册和互连时协作地接合显示芯片的那些。 显示芯片被倒装芯片安装到驱动器芯片上，并且具有位于由显示芯片和驱动器芯片限定的空间之间的芯片间接合电介质层。 LED显示器和驱动器芯片封装随后选择性地去除了最初形成LED阵列的衬底，从而暴露显示芯片的连接焊盘和剩余的铟 - 镓 - 铝 - 磷化物（InGaAlP）外延层。 从LED显示芯片发出的光通过显示芯片的剩余的铟镓铝磷化物（InGaAlP）外延层发射。

公开(公告)号：US5848925A

公开(公告)日：1998-12-15

申请号：US773121

申请日：1996-12-26

Applicant: Emmett Howard ,  Curtis D. Moyer ,  James E. Jaskie

Inventor： Emmett Howard ,  Curtis D. Moyer ,  James E. Jaskie

IPC: H01J9/02

CPC classification number: H01J9/025 ,  H01J2201/30423 ,  H01J2329/00

Abstract: A method for fabricating an array (300) of edge electron emitters (530) includes the steps of: forming first and second grooves (310, 320) in first and second opposing planar surfaces (101, 102), respectively, of a supporting substrate (110) to form an array of openings (330) therethrough; forming a dielectric layer (122) on the first planar surface (101) and an emission structure (120) on the dielectric layer (122); forming a plurality of cathodes (132) on the emission structure (120); forming gates (515) on a portion of the surfaces defining the first grooves (310); forming a masking film (710) on the cathodes (132)/emission structure (120); removing an outer, radial portion (726) of the masking film (710); etching the emission structure (120), the retracted masking film (710) forming a mask, thereby providing a predetermined configuration of the edge electron emitters (530) with respect to the gates (515) and cathodes (132).

Abstract translation: 一种用于制造边缘电子发射器（530）的阵列（300）的方法包括以下步骤：分别在支撑衬底的第一和第二相对的平坦表面（101,102）中形成第一和第二凹槽（310,320） （110）以形成穿过其中的开口阵列（330）; 在所述第一平坦表面（101）上形成介电层（122）和所述电介质层（122）上的发射结构（120）; 在所述发射结构（120）上形成多个阴极（132）; 在限定第一凹槽（310）的表面的一部分上形成浇口（515）; 在阴极（132）/发射结构（120）上形成掩模膜（710）; 去除所述掩蔽膜（710）的外径向部分（726）; 蚀刻发射结构（120），缩回的掩模膜（710）形成掩模，从而相对于栅极（515）和阴极（132）提供边缘电子发射器（530）的预定配置。

公开(公告)号：US5502348A

公开(公告)日：1996-03-26

申请号：US169232

申请日：1993-12-20

Applicant: Curtis D. Moyer ,  Lawrence N. Dworsky ,  Robert C. Kane

Inventor： Curtis D. Moyer ,  Lawrence N. Dworsky ,  Robert C. Kane

IPC: H01J21/06 ,  H01J3/40 ,  H01J21/10 ,  H01J1/46 ,  H01J17/24 ,  H01L23/58 ,  H01L29/06

CPC classification number: H01J21/105 ,  H01J3/40 ,  Y10S257/928

Abstract: A ballistic charge transport device including an edge electron emitter defining an elongated central opening therethrough with a receiving terminal (e.g. an anode) at one end of the opening and a getter at the other end. A suitable potential is applied between the emitter and the receiving terminal to attract emitted electrons to the receiving terminal and a different suitable potential is applied between the emitter and the getter so that contaminants, such as ions and other undesirable particles, are accelerated toward and absorbed by the getter.

Abstract translation: 一种弹道电荷传输装置，包括边缘电子发射体，其限定了在开口的一端处具有接收端子（例如阳极）的细长中心开口和另一端的吸气剂。 在发射极和接收端子之间施加合适的电位以将发射的电子吸引到接收端子，并且在发射极和吸气剂之间施加不同的合适电势，使得诸如离子和其它不期望的颗粒的污染物被加速并被吸收 由吸气者。

公开(公告)号：US5349209A

公开(公告)日：1994-09-20

申请号：US921773

申请日：1992-07-30

Applicant: Curtis D. Moyer ,  Thomas B. Harvey, III ,  James E. Jaskie

Inventor： Curtis D. Moyer ,  Thomas B. Harvey, III ,  James E. Jaskie

IPC: H01L33/00 ,  H01L51/50 ,  H01L51/52 ,  H05B33/12 ,  H05B33/14 ,  H01L27/14 ,  H01L29/34 ,  H01L31/12

CPC classification number: H01L51/5092 ,  H01L51/5012

Abstract: A light emitting diode including a carrier injection layer of semiconductor material, such as diamond, and a light emitting layer of electroluminescent organic material, such as PPV, positioned to form a diode junction therebetween. The semiconductor material being selected to have a wider bandgap than the organic material and the materials being further selected to minimize the discontinuities at the junction which would cause energy spikes.

Abstract translation: 包括诸如金刚石的半导体材料的载流子注入层和诸如PPV的电致发光有机材料的发光层的发光二极管，其被定位以在它们之间形成二极管结。 选择半导体材料具有比有机材料更宽的带隙，并且进一步选择材料以最小化将导致能量尖峰的接合处的不连续性。

公开(公告)号：US5334855A

公开(公告)日：1994-08-02

申请号：US933837

申请日：1992-08-24

Applicant: Curtis D. Moyer ,  James E. Jaskie ,  Ronald N. Legge

Inventor： Curtis D. Moyer ,  James E. Jaskie ,  Ronald N. Legge

IPC: H01L33/00 ,  H01L33/42 ,  H01L29/161

CPC classification number: H01L33/42 ,  H01L33/002

Abstract: A light emitting diode including a carrier injection layer of semiconductor material, such as diamond, and a light emitting layer of polycrystalline phosphor, such as zinc oxide, positioned to form a diode junction therebetween. The semiconductor material being selected to have a wider bandgap than the polycrystalline phosphor and the materials being further selected to minimize the discontinuities at the junction which would cause energy spikes.

Abstract translation: 包括诸如金刚石的半导体材料的载流子注入层和诸如氧化锌的多晶磷光体的发光层的发光二极管被定位以在它们之间形成二极管结。 选择半导体材料具有比多晶磷光体更宽的带隙，并且进一步选择材料以最小化将导致能量尖峰的接合处的不连续性。

公开(公告)号：US5044736A

公开(公告)日：1991-09-03

申请号：US609539

申请日：1990-11-06

Applicant: James E. Jaskie ,  Curtis D. Moyer

Inventor： James E. Jaskie ,  Curtis D. Moyer

IPC: G02B1/11 ,  G02F1/19

CPC classification number: G02F1/19 ,  G02B1/111

Abstract: A configurable display comprising a distributed Bragg reflector having a plurality of flexible, compressible polymer layers is provided. The polymer layers are transparent and comprise alternating layers of differential index of refraction material so that a reflective surface is formed at each interface between the alternating layers. The polymer layers are sandwiched between a first electrode which is transparent and a second electrode. Thickness of each of the layers is designed such that light reflecting from the reflective surfaces interferes constructively at predetermined wavelengths. The thickness of each of the layers is altered by application of a static potential between the first and second electrodes which deforms the polymer layers thereby shifting the wavelength at which constructive interference occurs. In this manner wavelength and amplitude of reflective light can be modulated by a voltage applied between the first and second electrodes.

Abstract translation: 提供了一种可配置显示器，其包括具有多个柔性可压缩聚合物层的分布布拉格反射器。 聚合物层是透明的并且包括差分折射率材料的交替层，使得在交替层之间的每个界面处形成反射表面。 聚合物层被夹在透明的第一电极和第二电极之间。 每个层的厚度被设计成使得从反射表面反射的光以预定的波长建设性地干涉。 通过在第一和第二电极之间施加静电势来改变每个层的厚度，使得聚合物层变形从而使发生相长干涉的波长发生变化。 以这种方式，可以通过施加在第一和第二电极之间的电压来调制反射光的波长和幅度。

公开(公告)号：US4805003A

公开(公告)日：1989-02-14

申请号：US120569

申请日：1987-11-10

Applicant: Paige M. Holm ,  Curtis D. Moyer

Inventor： Paige M. Holm ,  Curtis D. Moyer

IPC: H01L21/338 ,  H01L29/80 ,  H01L29/812 ,  H01L29/205

CPC classification number: H01L29/8122

Abstract: A vertical III-V compound MESFET is provided. The MESFET has a buried P-type layer which separates the source and the drain regions. A small N-type region in the buried P layer connects the source channel to the drain area. This opening in the buried P layer is located underneath the Schottky gate.

Abstract translation: 提供垂直的III-V复合MESFET。 MESFET具有分离源区和漏区的掩埋P型层。 掩埋P层中的小N型区域将源极沟道连接到漏极区域。 掩埋P层中的这个开口位于肖特基门下方。

公开(公告)号：US4775876A

公开(公告)日：1988-10-04

申请号：US93851

申请日：1987-09-08

Applicant: Curtis D. Moyer

Inventor： Curtis D. Moyer

IPC: H01L33/00 ,  H01L33/02 ,  H01L33/14 ,  H01L33/30

CPC classification number: H01L33/30 ,  H01L33/0004 ,  H01L33/14 ,  H01L33/02

Abstract: A photon recycling light emitting diode consisting of a stack of direct bandgap semiconductor active layers on a substrate with increasing bandgap energy from the substrate, separated by barrier layers having higher bandgap energy and capped with a window layer having a bandgap energy higher than the active layers.

Abstract translation: 一种光子再循环发光二极管，由衬底上的直接带隙半导体有源层的堆叠构成，具有来自衬底的带隙能量增加，由具有较高带隙能量的阻挡层隔开并且被具有比有源层高的带隙能量的窗口层 。