摘要:
A first transistor and a second transistor are formed with different threshold voltages. A first gate is formed over the first region of a substrate for a first transistor and a second gate over the second region for a second transistor. The first region is masked. A threshold voltage of the second transistor is adjusted by implanting through the second gate while masking the first region. Current electrode regions are formed on opposing sides of the first gate and current electrode regions on opposing sides of the second gate.
摘要:
Forming an NVM structure includes forming a floating gate layer; forming a first dielectric layer over the floating gate layer; forming a plurality of nanocrystals over the first dielectric layer; etching the first dielectric layer using the plurality of nanocrystals as a mask to form dielectric structures, wherein the floating gate layer is exposed between adjacent dielectric structures; etching a first depth into the floating gate layer using the plurality of dielectric structures as a mask to form a plurality of patterned structures, wherein the first depth is less than a thickness of the floating gate layer; patterning the floating gate layer to form a floating gate; forming a second dielectric layer over the floating gate, wherein the second dielectric layer is formed over the patterned structures and on the floating gate layer between adjacent patterned structures; and forming a control gate layer over the second dielectric layer.
摘要:
A method and structure implant a first-type impurity within a substrate to form a channel region within the substrate adjacent a top surface of the substrate; form a gate stack on the top surface of the substrate above the channel region; and implant a second-type impurity within the substrate to form source and drain regions within the substrate adjacent the top surface. The channel region is positioned between the source and drain regions. The second-type impurity has an opposite polarity with respect to the first-type impurity. The method and structure implant a greater concentration of the first-type impurity, relative to a concentration of the first-type impurity within the channel region, to form a primary body doping region within the substrate below (relative to the top surface) the channel region; and to form secondary body doping regions within the substrate below (relative to the top surface) the source and drain regions.
摘要:
The present invention discloses a method and apparatus for measuring the temperature field on the surface of casting billet/slab, including: a thermal imager, an infrared radiation thermometer, a mechanical scanning unit, an image and data processing system; the thermal imager, the infrared radiation thermometer and the mechanical scanning unit are respectively connected to the image and data processing system; the infrared radiation thermometer is installed on the mechanical scanning unit and can measure the temperature of casting billet/slab surface by scanning; the thermal imager can measure the temperature of a certain area on the surface of casting billet/slab by thermal imaging. The present invention makes use of the combination of high-resolution thermal imager and scan-type infrared radiation thermometer, through the model-based filtering method, overcomes the influence of iron scales on the surface of casting billet/slab, and implements real-time stable measurement of surface temperature of casting billet/slab.
摘要:
A semiconductor fabrication process includes masking a first region, e.g., an NMOS region, of a semiconductor wafer, e.g., a biaxial, tensile strained silicon on insulator (SOI) wafer and creating recesses in source/drain regions of a second wafer region, e.g., a PMOS region. The wafer is then annealed in an ambient that promotes migration of silicon. The source/drain recesses are filled with source/drain structures, e.g., by epitaxial growth. The anneal ambient may include a hydrogen bearing species, e.g., H2 or GeH2, maintained at a temperature in the range of approximately 800 to 1000° C. The second region may be silicon and the source/drain structures may be silicon germanium. Creating the recesses may include creating shallow recesses with a first etch process, performing an amorphizing implant to create an amorphous layer, performing an inert ambient anneal to recrystallize the amorphous layer, and deepening the shallow recesses with a second etch process.
摘要:
An apparatus for measuring the liquid level of molten metal comprises an image measuring device (5), a measuring probe (6), a lifting mechanism (1), a displacement sensor (11), an data processing system (4) and a correction marker(7). The lifting mechanism (1) is fixed to the molten metal container (10) or is independent of the molten metal container, the image measuring device (5) and the measuring probe (6) are installed on the lifting mechanism (1) or are independent of the lifting mechanism, and the optical axis of the image measuring device (5) is set at an angle with the geometric axis of the measuring probe (6), the measuring probe (6) is located within the field of view of the image measuring device (5), the image measuring device (5), the lifting mechanism (1) and the displacement sensor (11) are connected to the data processing system (4) respectively. A method for measuring the level of molten metal is also disclosed. The present invention is able to eliminate the influence by the slag layer floating on the molten metal and to achieve stably and continuously accurate measurement of molten metal level by using the measuring probe (6) inserting into molten metal through the slag-metal interface and having the slag thickness information after lifted.
摘要:
The present invention discloses a method and apparatus for measuring the temperature field on the surface of casting billet/slab, including: a thermal imager, an infrared radiation thermometer, a mechanical scanning unit, an image and data processing system; the thermal imager, the infrared radiation thermometer and the mechanical scanning unit are respectively connected to the image and data processing system; the infrared radiation thermometer is installed on the mechanical scanning unit and can measure the temperature of casting billet/slab surface by scanning; the thermal imager can measure the temperature of a certain area on the surface of casting billet/slab by thermal imaging. The present invention makes use of the combination of high-resolution thermal imager and scan-type infrared radiation thermometer, through the model-based filtering method, overcomes the influence of iron scales on the surface of casting billet/slab, and implements real-time stable measurement of surface temperature of casting billet/slab.
摘要:
A method for forming a semiconductor device includes providing a substrate and forming a p-channel device and an n-channel device, each of the p-channel device and the n-channel device comprising a source, a drain, and a gate, the p-channel device having a first sidewall spacer and the n-channel device having a second sidewall spacer. The method further includes forming a liner and forming a tensile stressor layer over the liner and removing a portion of the tensile stressor layer from a region overlying the p-channel device. The method further includes transferring a stress characteristic of an overlying portion of a remaining portion of the tensile stressor layer to a channel of the n-channel device. The method further includes using the remaining portion of the tensile stressor layer as a hard mask, forming a first recess and a second recess adjacent the gate of the p-channel device.
摘要:
A transistor is formed by providing a semiconductor layer and forming a control electrode overlying the semiconductor layer. A portion of the semiconductor layer is removed lateral to the control electrode to form a first recess and a second recess on opposing sides of the control electrode. A first stressor is formed within the first recess and has a first doping profile. A second stressor is formed within the second recess and has the first doping profile. A third stressor is formed overlying the first stressor. The third stressor has a second doping profile that has a higher electrode current doping concentration than the first profile. A fourth stressor overlying the second stressor is formed and has the second doping profile. A first current electrode and a second current electrode of the transistor include at least a portion of the third stressor and the fourth stressor, respectively.
摘要:
A semiconductor process and apparatus fabricate a metal gate electrode (30) and an integrated semiconductor resistor (32) by forming a metal-based layer (26) and semiconductor layer (28) over a gate dielectric layer (24) and then selectively implanting the resistor semiconductor layer (28) in a resistor area (97) to create a conductive upper region (46) and a conduction barrier (47), thereby confining current flow in the resistor semiconductor layer (36) to only the top region (46) in the finally formed device.