公开(公告)号：US20070162736A1

公开(公告)日：2007-07-12

申请号：US11462409

申请日：2006-08-04

Applicant: Tung-Peng Wu ,  Wei-Te Hsu ,  Wen-Chin Lin

Inventor： Tung-Peng Wu ,  Wei-Te Hsu ,  Wen-Chin Lin

IPC: G06F15/177 ,  G06F9/00

CPC classification number: G06F9/4401

Abstract: An electronic device with accelerated boot process and a method for the same are proposed. When the host of the electronic device is in the off mode or standby mode, users can input a normal boot signal or a fast boot signal to activate the host. The boot signal is encoded by an encoder for producing a corresponding code. The host determines whether the input signal is the normal boot signal or the fast boot signal according to the received code. If the received code is the normal boot signal, the host performs a normal boot process. If the received code is the fast boot signal, an instant launcher directly launches application programs specified in the fast boot signal and blocks the start of unnecessary application programs. The boot process of the electronic device can be effectively accelerated, and users can define several boot modes themselves to meet different requirements.

Abstract translation: 提出了一种具有加速启动过程的电子设备及其方法。 当电子设备的主机处于关闭模式或待机模式时，用户可以输入正常的引导信号或快速引导信号来激活主机。 引导信号由用于产生相应代码的编码器编码。 主机根据接收到的代码确定输入信号是正常引导信号还是快速启动信号。 如果接收到的代码是正常引导信号，则主机执行正常引导过程。 如果接收的代码是快速启动信号，即时启动器将直接启动在快速引导信号中指定的应用程序，并阻止不必要的应用程序的启动。 电子设备的启动过程可以有效加速，用户可以自己定义几种启动模式，以满足不同的需求。

公开(公告)号：US20070096230A1

公开(公告)日：2007-05-03

申请号：US11610760

申请日：2006-12-14

Applicant: Yuan-Hung Liu ,  Chih-Ta Wu ,  Lan-Lin Chao ,  Yeur-Luen Tu ,  Wen-Chin Lin ,  Chia-Shiung Tsai

Inventor： Yuan-Hung Liu ,  Chih-Ta Wu ,  Lan-Lin Chao ,  Yeur-Luen Tu ,  Wen-Chin Lin ,  Chia-Shiung Tsai

IPC: H01L43/00 ,  H01L29/82

CPC classification number: H01L43/12 ,  H01L27/228

Abstract: An improved magnetoresistive memory device has a reduced distance between the magnetic memory element and a conductive memory line used for writing to the magnetic memory element. The reduced distance is facilitated by forming the improved magnetoresistive memory device according to a method that includes forming a mask over the magnetoresistive memory element and forming an insulating layer over the mask layer, then removing portions of the insulating layer using a planarization process. A conductive via can then be formed in the mask layer, for example using a damascene process. The conductive memory line can then be formed over the mask layer and conductive via.

Abstract translation: 改进的磁阻存储器件具有减小的磁存储元件与用于写入磁存储器元件的导电存储器线之间的距离。 通过根据包括在磁阻存储元件上形成掩模并在掩模层上形成绝缘层，然后使用平坦化处理去除绝缘层的部分的方法，通过形成改进的磁阻存储器件来简化缩短的距离。 然后可以在掩模层中形成导电通孔，例如使用镶嵌工艺。 然后可以在掩模层和导电通孔上形成导电存储器线。

公开(公告)号：US07203129B2

公开(公告)日：2007-04-10

申请号：US10780171

申请日：2004-02-16

Applicant: Wen-Chin Lin ,  Danny D. Tang ,  Li-Shyue Lai

Inventor： Wen-Chin Lin ,  Danny D. Tang ,  Li-Shyue Lai

IPC: G11C8/00

CPC classification number: G11C11/16 ,  G11C2213/72 ,  G11C2213/74

Abstract: In one example, an MRAM memory array includes a plurality of word lines, a plurality of bit lines crossing the word lines, and a plurality of first and second diodes, and magnetic tunnel junction memories. Each first diode includes a cathode, and an anode coupled to each bit line. Each second diode includes an anode, and a cathode coupled to each word line. The magnetic tunnel junction memories include a pinned layer, a free layer, and a non-magnetic layer. The non-magnetic layer is located between the pinned layer and the free layer. Each diode is positioned at crossing points of the bit lines and the word lines and connected between the first diode at the corresponding crossing bit line and the second diode at the corresponding crossing word line.

Abstract translation: 在一个示例中，MRAM存储器阵列包括多个字线，与字线交叉的多个位线，以及多个第一和第二二极管以及磁性隧道结存储器。 每个第一二极管包括阴极和耦合到每个位线的阳极。 每个第二二极管包括阳极和耦合到每个字线的阴极。 磁性隧道结存储器包括钉扎层，自由层和非磁性层。 非磁性层位于被钉扎层和自由层之间。 每个二极管位于位线和字线的交叉点处，并连接在相应交叉位线处的第一二极管和相应交叉字线处的第二二极管之间。

公开(公告)号：US20070077697A1

公开(公告)日：2007-04-05

申请号：US11241574

申请日：2005-09-30

Applicant: Wen-Chin Lin ,  Denny Tang ,  Chuan-Ying Lee ,  H. C. Cheng

Inventor： Wen-Chin Lin ,  Denny Tang ,  Chuan-Ying Lee ,  H. C. Cheng

IPC: H01L21/8238 ,  H01L21/425 ,  H01L21/31

CPC classification number: H01L21/76 ,  H01L21/263 ,  H01L21/26506 ,  H01L21/266 ,  H01L21/823481 ,  H01L21/823878 ,  H01L27/08

Abstract: A method for forming semi-insulating portions in a semiconductor substrate provides depositing a hardmask film over a semiconductor substructure to a thickness sufficient to prevent charged particles from passing through the hardmask. The hardmask is patterned creating openings through which charged particles pass and enter the substrate during an implantation process. The semi-insulating portions may extend deep into the semiconductor substrate and electrically insulate devices formed on opposed sides of the semi-insulating portions. The charged particles may advantageously be protons and further substrate portions covered by the patterned hardmask film are substantially free of the charged particles.

Abstract translation: 在半导体衬底中形成半绝缘部分的方法提供了将半导体衬底上的硬掩模膜沉积到足以防止带电粒子穿过硬掩模的厚度。 硬掩模被图案化以产生开孔，在注入过程中带电粒子通过该开口进入衬底。 半绝缘部分可以深深地延伸到半导体衬底中并且电绝缘形成在半绝缘部分的相对侧上的器件。 带电粒子可以有利地是质子，并且由图案化的硬掩模膜覆盖的另外的基底部分基本上没有带电粒子。

公开(公告)号：US20050083747A1

公开(公告)日：2005-04-21

申请号：US10689421

申请日：2003-10-20

Applicant: Denny Tang ,  Wen-Chin Lin

Inventor： Denny Tang ,  Wen-Chin Lin

IPC: G11C5/14 ,  G11C7/02 ,  G11C11/16 ,  G11C11/56

CPC classification number: G11C5/147 ,  G11C11/16 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/5607 ,  G11C2211/5634

Abstract: A multilevel reference generator has a plurality of nonlinear standard resistive elements where each resistive element is biased at a constant level to develop a resultant level. The multilevel reference generator has a plurality of mirror sources. Each mirror source is in communication with the one of the plurality of resistive elements such that each mirror source receives the resultant level from the one standard resistive element and provides a mirrored replication of the resultant level. The multilevel reference generator has a plurality of reference level combining circuits. The reference level combining circuit includes a resultant level summing circuit that additively combines the first and second mirrored replication level and a level scaling circuit to create a scaling of the combined first and second mirrored replication levels to create the reference level.

Abstract translation: 多电平参考发生器具有多个非线性标准电阻元件，其中每个电阻元件被偏置在恒定电平以产生合成电平。 多电平参考发生器具有多个镜源。 每个反射镜源与多个电阻元件中的一个电阻元件相通，使得每个反射镜源从一个标准电阻元件接收合成电平，并提供所得电平的镜像复制。 多电平参考发生器具有多个参考电平组合电路。 参考电平组合电路包括相加地组合第一和第二镜像复制级别的电平求和电路和级别缩放电路，以创建组合的第一和第二镜像复制级别的缩放以创建参考电平。

公开(公告)号：US5920667A

公开(公告)日：1999-07-06

申请号：US909759

申请日：1997-08-12

Applicant: Kuo-Tung Tiao ,  Yen-Zen Lee ,  Wen-Chin Lin ,  Victor Hwang ,  Yeh Jin Ching

Inventor： Kuo-Tung Tiao ,  Yen-Zen Lee ,  Wen-Chin Lin ,  Victor Hwang ,  Yeh Jin Ching

IPC: G02B6/32 ,  G02B6/35 ,  G02B6/38

CPC classification number: G02B6/3504 ,  G02B6/32 ,  G02B6/3558

Abstract: A switch device with a spiral mechanism for optical fiber is disclosed for improved reliablility. It includes: (a) a plurality of non-rotatable optical fibers, each having first end and second ends, the first end of each the non-rotatable optical fiber being provided with a parallel convergent lens, the second end of each the non-rotatable optical fiber being provided with a connector to connect an interface for receiving an optical signal; the plurality of the non-rotatable optical fibers being fixed on a circular fixture; (b) a rotatable optical fiber having first and second ends, wherein the first end of the rotatable optical fiber passes through a fixture hole, and connected with connector for receiving a optical signal, while the second end of the rotatable optical fiber being fixed to a motor; and (c) a spiral pipe made of a rigid material being sleeved on a portion of the rotatable optical fiber between the first and second ends The second end of the rotatable optical fiber is arranged such that it can be connected to the first end of one of the non-rotatable optical fibers without contact to form into a coupling channel within an angular scope of 360 degrees.

Abstract translation: 公开了一种具有用于光纤的螺旋机构的开关装置，用于改善可靠性。 它包括：（a）多个不可旋转的光纤，每个具有第一端和第二端，每个不可旋转的光纤的第一端设置有平行会聚透镜，每个非可旋转光纤的第二端， 可旋转光纤设置有连接器以连接用于接收光信号的接口; 多个不可旋转的光纤被固定在圆形夹具上; （b）具有第一端和第二端的可旋转光纤，其中可旋转光纤的第一端通过固定孔，并与用于接收光信号的连接器连接，而可旋转光纤的第二端被固定到 电机 和（c）由刚性材料制成的螺旋管，套在第一和第二端之间的可旋转光纤的一部分上。可旋转光纤的第二端被布置成使得其可连接到第一端的第一端 的不可旋转的光纤，而不会在360度的角度范围内形成耦合通道。

公开(公告)号：US08496493B2

公开(公告)日：2013-07-30

申请号：US13306859

申请日：2011-11-29

Applicant: Wen-Chin Lin ,  Wen-Chieh Wang ,  Sheng-Tien Chang ,  Chin-Ming Chen ,  Ching-Jou Chen

Inventor： Wen-Chin Lin ,  Wen-Chieh Wang ,  Sheng-Tien Chang ,  Chin-Ming Chen ,  Ching-Jou Chen

IPC: H01R13/625

CPC classification number: G06F1/187

Abstract: An apparatus for fixing a storage device includes a metal bracket, and a fixing frame slidably received in the bracket. The bracket includes two side plates, and one of the side plates forms a resilient tab. The fixing frame includes two opposite fixing arms each defining a latching hole, two resilient members, and two metal fasteners. Each resilient member includes a pad clinging to an inner surface of a corresponding one of the fixing arms, and a projection engaging in the latching hole of the corresponding fixing arm. Each fastener includes a head, and a pin. The heads are received in the corresponding latching holes and abut against outer sides of the corresponding projections. The pins extend through the corresponding through holes for engaging with the storage device. A protrusion extends outwards from one of the heads to contact the resilient tab and connect the storage device to ground.

Abstract translation: 用于固定存储装置的装置包括金属支架和可滑动地容纳在支架中的固定框架。 支架包括两个侧板，并且其中一个侧板形成弹性片。 固定框架包括两个相对的固定臂，每个固定臂限定一个锁定孔，两个弹性构件和两个金属紧固件。 每个弹性构件包括粘附到对应的一个固定臂的内表面的垫，以及接合在相应的固定臂的闩锁孔中的突起。 每个紧固件包括头部和销。 头部被容纳在相应的闩锁孔中，并抵靠在相应突出部的外侧。 销延伸通过相应的通孔，以与存储装置接合。 一个突起从一个头部向外延伸以接触弹性突舌并将存储装置连接到地面。

公开(公告)号：US08367553B2

公开(公告)日：2013-02-05

申请号：US12962055

申请日：2010-12-07

Applicant: Wei-Che Tsao ,  Wen-Chin Lin

Inventor： Wei-Che Tsao ,  Wen-Chin Lin

IPC: H01L21/306

CPC classification number: H01L21/76898 ,  H01L21/7684

Abstract: A method for manufacturing TSVs comprises following steps: A stack structure having a substrate, an ILD layer and a dielectric stop layer is provided, in which an opening penetrating through the ILD layer and the dialectic stop layer and further extending into the substrate is formed. After an insulator layer and a metal barrier are formed on the stack structure, a top metal layer is formed on the stack structure to fulfill the opening. A first planarization process stopping on the metal barrier is conducted, wherein the first planarization process has a polishing rate for removing the metal barrier less than that for removing the top metal layer. A second planarization process stopping on the dielectric stop layer is conducted, wherein the second planarization process has a polishing rate for removing the insulator layer greater than that for removing the dielectric stop layer. The dielectric stop layer is than removed.

Abstract translation: 制造TSV的方法包括以下步骤：提供具有基板，ILD层和电介质停止层的堆叠结构，其中形成穿透ILD层和辩证阻止层并进一步延伸到基板中的开口。 在堆叠结构上形成绝缘体层和金属屏障之后，在堆叠结构上形成顶部金属层以实现开口。 进行停止在金属屏障上的第一平面化处理，其中第一平面化工艺具有除去金属屏障的抛光速率小于除去顶部金属层的抛光速率。 进行停止在电介质停止层上的第二平坦化工艺，其中第二平坦化工艺具有用于除去绝缘体层的抛光速率大于去除电介质停止层的抛光速率。 电介质停止层除去。

公开(公告)号：US20130011938A1

公开(公告)日：2013-01-10

申请号：US13176790

申请日：2011-07-06

Applicant: Wei-Che TSAO ,  Chia-Lin Hsu ,  Jen-Chieh Lin ,  Teng-Chun Tsai ,  Hsin-Kuo Hsu ,  Ya-Hsueh Hsieh ,  Ren-Peng Huang ,  Chih-Hsien Chen ,  Wen-Chin Lin ,  Yung-Lun Hsieh

Inventor： Wei-Che TSAO ,  Chia-Lin Hsu ,  Jen-Chieh Lin ,  Teng-Chun Tsai ,  Hsin-Kuo Hsu ,  Ya-Hsueh Hsieh ,  Ren-Peng Huang ,  Chih-Hsien Chen ,  Wen-Chin Lin ,  Yung-Lun Hsieh

IPC: H01L21/66 ,  H01L21/306 ,  H01L21/304

CPC classification number: H01L21/31053 ,  H01L21/3212 ,  H01L21/76898 ,  H01L22/12 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for manufacturing TSVs, wherein the method comprises several steps as follows: A stack structure having a substrate and an ILD layer (inter layer dielectric layer) is provided, in which an opening penetrating through the ILD layer and further extending into the substrate is formed. After an insulator layer and a metal barrier layer are formed on the stack structure and the sidewalls of the opening, a top metal layer is then formed on the stack structure to fulfill the opening. A first planarization process stopping on the barrier layer is conducted to remove a portion of the top metal layer. A second planarization process stopping on the ILD layer is subsequently conducted to remove a portion of the metal barrier layer, a portion of the insulator layer and a portion of the top metal layer, wherein the second planarization process has a polishing endpoint determined by a light interferometry or a motor current.

Abstract translation: 一种制造TSV的方法，其中该方法包括以下几个步骤：提供具有基板和ILD层（层间电介质层）的堆叠结构，其中穿透ILD层并进一步延伸到基板中的开口是 形成。 在堆叠结构和开口的侧壁上形成绝缘体层和金属阻挡层之后，在堆叠结构上形成顶部金属层以实现开口。 进行停止在阻挡层上的第一平面化处理以去除顶部金属层的一部分。 随后进行停止在ILD层上的第二平坦化处理以去除金属阻挡层的一部分，绝缘体层的一部分和顶部金属层的一部分，其中第二平坦化工艺具有由光线确定的抛光终点 干涉测量或电机电流。

公开(公告)号：US08349028B2

公开(公告)日：2013-01-08

申请号：US12591236

申请日：2009-11-13

Applicant: Wen-Chin Lin ,  Chien-Wen Lee

Inventor： Wen-Chin Lin ,  Chien-Wen Lee

IPC: C09B62/04

CPC classification number: C09B62/085 ,  C09B62/043 ,  C09B62/06 ,  C09B62/09 ,  C09B62/095 ,  C09B62/10 ,  C09B67/0072 ,  C09B67/0073

Abstract: The present invention relates to a reactive printing dye composition, which includes: (a) at least one reactive dye; (b) an organic buffer; and (c) a mirabilite or a dispersant. The reactive printing dye composition of the present invention is capable for being used in the fabric-dyeing, for example, dyeing of cotton, hemp, silk, rayon, wool, blending, etc. The reactive printing dye composition of the present invention is advantageous in high pH value stability, high storage stability, and reduced degradation in dyeing strength. In addition, the present invention further provides an aqueous reactive printing dye composition.

Abstract translation: 本发明涉及一种反应性印花染料组合物，其包括：（a）至少一种活性染料; （b）有机缓冲液; 和（c）芒硝或分散剂。 本发明的活性印刷染料组合物能够用于织物染色，例如棉，麻，丝，人造丝，羊毛，混纺等的染色。本发明的反应性印花染料组合物是有利的 在高pH值稳定性，高储存稳定性和染色强度降低降低。 此外，本发明还提供一种水性反应性印花染料组合物。