摘要:
An interference signal avoiding device of a frequency hopping spread system and a method thereof are disclosed. A method of transmitting/receiving an interference signal avoiding signal according to the present invention includes: determining a frequency hopping channel set and a parameter of an interference signal detector in consideration of characteristics of an interference signal; detecting whether there is an interference signal with respect to frequency hopping candidate channels that are to be used for the next frequency hopping by using the determined interference signal detector; transmitting a signal through a channel that is determined by the interference signal detector that there is no interference signal among the frequency hopping candidate channels; and searching a channel through which the signal is transmitted from the frequency hopping candidate channels in order to receive the transmitted signal.
摘要:
Provided is a semiconductor device including first, second and third source/drain regions. A first conductive plug in contact with the first source/drain regions, having a first width and a first height, and including a first material is provided. An interlayer insulating layer covering the first conductive plug and the substrate is disposed. A second conductive plug vertically penetrating the interlayer insulating layer to be in contact with the second source/drain regions, having a second width and a second height, and including a second material is provided. A third conductive plug vertically penetrating the interlayer insulating layer to be in contact with the third source/drain regions, having a third width and a third height, and including a third material is disposed. The second material includes a noble metal, a noble metal oxide or a perovskite-based conductive oxide.
摘要:
Provided is a method of operating a smart radio communication system, the method including: collecting information associated with each of a plurality of radio access technologies (RATs) through an access to the plurality of RATs; receiving a type of a service, requested by a terminal, via a first RAT accessing the terminal among the plurality of RATs; selecting an optimal channel based on the collected information and the received type of the service; and transmitting a content corresponding to the service via the selected optimal channel.
摘要:
A plurality of metal patterns are disposed on a substrate. A support structure is provided between the plurality of metal patterns. The support structure has a supporter and a glue layer. Each of the plurality of metal patterns has a greater vertical length than a horizontal length on the substrate when viewed from a cross-sectional view. The supporter has a band gap energy of at least 4.5eV. The glue layer is in contact with the plurality of metal patterns. The supporter and the glue layer are formed of different materials.
摘要:
Disclosed are wholly aromatic polyamide filament and a method of manufacturing the same, characterized in that, in a process of preparing wholly aromatic polyamide polymer, a multiple tubular feed pipe for polymeric monomer and polymerization solvent with specific construction of adjacent inner paths 11a and outer paths 11b which are alternately arranged one another is used to feed either aromatic diacid chloride A or aromatic diamine dissolved in the polymerization solvent B into a polymerization reactor 20 through corresponding one among the inner and outer paths 11a and 11b. The present invention is effective to progress uniform and homogeneous polymerization over all of area of a polymerization reactor 20 leading to reduction of deviation in degree of polymerization, since polymeric monomers are miscible and react together very well immediately after putting the monomers into the reactor 20. Accordingly, the wholly aromatic polyamide filament produced exhibits narrow PDI and increased ACS, so as to considerably improve strength and modulus thereof.
摘要:
A semiconductor device may include a resistance pattern including a resistance material on a substrate. The resistance pattern may include first and second spaced apart base elements, a bridge element, and first, second, third, and fourth extension elements. The first and second base elements may be substantially parallel, and the bridge element may be connected between respective center portions of the first and second spaced apart base elements. The first and second extension elements may be connected to opposite ends of the first base element and may extend toward the second base element, and the third and fourth extension elements may be connected to opposite ends of the second base element and may extend toward the first base element. Related methods are also discussed.
摘要:
Provided is a method for providing a service, and a method and an apparatus for allocating a resource in a wireless communication system. Services to be provided to users are divided into one of primary and secondary services based on priority in terms of frequency utilization. A service is provided using frequency channel remaining after being used in the primary service in a time zone when frequency utilization rate of the primary service is a threshold value or less. Accordingly, when service data corresponding to the secondary service are received, a user terminal stores the service data in a storage unit. Then, when the user requests provision of the corresponding service, the user terminal provides the stored service data to the user.
摘要:
A semiconductor device and/or gate structure having a composite dielectric layer and methods of manufacturing the same is provided. In the semiconductor device, gate structure, and methods provided, a first conductive layer may be formed on a substrate. A native oxide layer formed on the first conductive layer may be removed. A surface of the first conductive layer may be nitrided so that the surface may be altered into a nitride layer. A composite dielectric layer including the first and/or second dielectric layers may be formed on the nitride layer. A second conductive layer may be formed on the composite dielectric layer. The first dielectric layer may include a material having a higher dielectric constant. The second dielectric layer may be capable of suppressing crystallization of the first dielectric layer.
摘要:
The present invention relates to a method for preparing a Sohporae Fructus extract containing isoflavone. More particularly, the present invention relates to a method for preparing a Sohporae Fructus extract containing isoflavone in high concentration, which is characterized by the steps of hydrothermal extraction, enzyme treatment and ethanol extraction of Sophorae Fructus. A Sophorae Fructus extract containing a high concentration of aglycon-type isoflavone having an excellent bio-absorbability can be prepared by the method of the present invention.
摘要:
Embodiments of the present invention provide methods of manufacturing memory devices including forming floating gate patterns on a semiconductor substrate having active regions thereon, wherein the floating gate patterns cover the active regions and are spaced apart from the active regions; forming an inter-gate dielectric layer on the semiconductor substrate having the floating gate patterns by alternately stacking a zirconium oxide layer and an aluminum oxide layer at least once, wherein the inter-gate dielectric layer is formed by a deposition process using O3 gas as a reactive gas; forming a control gate layer on the inter-gate dielectric layer; and forming a control gate, an inter-gate dielectric layer pattern and a floating gate by sequentially patterning the control gate layer, the inter-gate dielectric layer and the floating gate pattern, wherein the inter-gate dielectric layer pattern and the control gate are sequentially stacked across the active regions, and the floating gate is formed between the active regions and the inter-gate dielectric layer pattern Memory devices, such as flash memory devices are also provided.