公开(公告)号：US11682540B2

公开(公告)日：2023-06-20

申请号：US17466362

申请日：2021-09-03

Applicant: Entegris, Inc.

Inventor： Ying Tang ,  Sharad N. Yedave ,  Joseph R. Despres ,  Joseph D. Sweeney ,  Oleg Byl

IPC: H01J37/317 ,  H01J37/08

CPC classification number: H01J37/3171 ,  H01J37/08

Abstract: A system and method for ion implantation is described, which includes a gas or gas mixture including at least one ionizable gas used to generate ionic species and an arc chamber that includes two or more different arc chamber materials. Using the system ionic species are generated in the arc chamber with liner combination, and one or more desired ionic species display a higher beam current among the ionic species generated, which is facilitated by use of the different materials. In turn improved implantation of the desired ionic species into a substrate can be achieved. Further, the system can minimize formation of metal deposits during system operation, thereby extending source life and promoting improved system performance.

公开(公告)号：US11299802B2

公开(公告)日：2022-04-12

申请号：US17055885

申请日：2019-03-15

Applicant: ENTEGRIS, INC.

Inventor： Oleg Byl ,  Ying Tang ,  Joseph R. Despres ,  Joseph Sweeney ,  Sharad N. Yedave

IPC: C23C14/48 ,  C23C14/56 ,  H01J37/08 ,  H01J37/317

Abstract: The current disclosure is directed to methods and assemblies configured to deliver a mixture of germanium tetrafluoride (GeF4) and hydrogen (H2) gases to an ion implantation apparatus, so H2 is present in an amount in the range of 25%-67% (volume) of the gas mixture, or the GeF4 and H2 are present in a volume ratio (GeF4:H2) in the range of 3:1 to 33:67. The use of the H2 gas in an amount in mixture or relative to the GeF4 gas prevents the volatilization of cathode material, thereby improving performance and lifetime of the ion implantation apparatus. Gas mixtures according to the disclosure also result in a significant Ge+ current gain and W+ peak reduction during an ion implantation procedure.

公开(公告)号：US11139145B2

公开(公告)日：2021-10-05

申请号：US16904286

申请日：2020-06-17

Applicant: ENTEGRIS, INC.

Inventor： Ying Tang ,  Sharad N. Yedave ,  Joseph R. Despres ,  Joseph D. Sweeney ,  Oleg Byl

IPC: H01J37/317 ,  H01J37/08

Abstract: A system and method for ion implantation is described, which includes a gas or gas mixture including at least one ionizable gas used to generate ionic species and an arc chamber that includes two or more different arc chamber materials. Using the system ionic species are generated in the arc chamber with liner combination, and one or more desired ionic species display a higher beam current among the ionic species generated, which is facilitated by use of the different materials. In turn improved implantation of the desired ionic species into a substrate can be achieved. Further, the system can minimize formation of metal deposits during system operation, thereby extending source life and promoting improved system performance.

公开(公告)号：US20190136069A1

公开(公告)日：2019-05-09

申请号：US16098728

申请日：2017-03-27

Applicant: ENTEGRIS, INC.

Inventor： Steven Bishop ,  Sharad N. Yedave ,  Oleg Bly ,  Joseph Sweeney ,  Ying Tang

IPC: C09D1/00 ,  H01J37/08 ,  H01J37/317

Abstract: A hydrogenated isotopically enriched boron trifluoride (BF3) dopant source gas composition. The composition contains (i) boron trifluoride isotopically enriched above natural abundance in boron of atomic mass 11 (UB), and (ii) hydrogen in an amount of from 2 to 6.99 vol. %, based on total volume of boron trifluoride and hydrogen in the composition. Also described are methods of use of such dopant source gas composition, and associated apparatus therefor.

公开(公告)号：US20170250084A1

公开(公告)日：2017-08-31

申请号：US15507859

申请日：2015-08-19

Applicant: Entegris, Inc.

Inventor： Oleg Byl ,  Sharad N. Yedave ,  Joseph D. Sweeney ,  Barry Lewis Chambers ,  Ying Tang

IPC: H01L21/265 ,  H01J37/244 ,  H01L31/18 ,  H01J37/317

CPC classification number: H01L21/2658 ,  H01J37/08 ,  H01J37/244 ,  H01J37/3171 ,  H01J2237/006 ,  H01L31/18

Abstract: Apparatus and method for use of solid dopant phosphorus and arsenic sources and higher order phosphorus or arsenic implant source material are described. In various implementations, solid phosphorus-comprising or arsenic-comprising materials are provided in the ion source chamber for generation of dimer or tetramer implant species. In other implementations, the ion implantation is augmented by use of a reactor for decomposing gaseous phosphorus-comprising or arsenic-comprising materials to form gas phase dimers and tetramers for ion implantation.

公开(公告)号：US20160013018A1

公开(公告)日：2016-01-14

申请号：US14861844

申请日：2015-09-22

Applicant: Entegris, Inc.

Inventor： Robert Kaim ,  Joseph D. Sweeney ,  Oleg Byl ,  Sharad N. Yedave ,  Edward E. Jones ,  Peng Zou ,  Ying Tang ,  Barry Lewis Chambers ,  Richard S. Ray

IPC: H01J37/317 ,  H01L21/265

CPC classification number: H01J37/3171 ,  C01B35/00 ,  C01B35/061 ,  C01P2006/88 ,  H01J2237/006 ,  H01J2237/08 ,  H01J2237/31701 ,  H01L21/265 ,  Y02P20/134

Abstract: An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

Abstract translation: 包含两个或更多个硼原子和至少一个氟原子的同位素富集的含硼化合物，其中至少一个硼原子含有所需的硼的同位素，其浓度或比例大于天然丰度浓度或比率 。 该化合物可以具有化学式B2F4。 对这些化合物的合成方法和使用这种化合物的离子注入方法进行了描述，以及储存和分配容器，其中有利地含有同位素富集的含硼化合物用于随后的分配用途。

公开(公告)号：US20150380212A1

公开(公告)日：2015-12-31

申请号：US14768758

申请日：2014-03-03

Applicant: ENTEGRIS, INC.

Inventor： Oleg Byl ,  Joseph D. Sweeney ,  Ying Tang ,  Richard S. Ray

IPC: H01J37/317 ,  H01L21/22 ,  H01J37/08

CPC classification number: H01J37/3171 ,  C23C14/48 ,  H01J37/08 ,  H01J2237/006 ,  H01J2237/08 ,  H01L21/2225

Abstract: Ion implantation compositions, systems and methods are described, for implantation of dopant species. Specific selenium dopant source compositions are described, as well as the use of co-flow gases to achieve advantages in implant system characteristics such as recipe transition, beam stability, source life, beam uniformity, beam current, and cost of ownership.

Abstract translation: 描述了用于注入掺杂物种类的离子注入组合物，系统和方法。 描述了具体的硒掺杂剂源组合物，以及使用共流气体来实现植入系统特征如配方转变，束稳定性，源寿命，束均匀性，束电流和所有权成本的优点。

公开(公告)号：US09142387B2

公开(公告)日：2015-09-22

申请号：US14095575

申请日：2013-12-03

Applicant: Entegris, Inc.

Inventor： Robert Kaim ,  Joseph D. Sweeney ,  Oleg Byl ,  Sharad N. Yedave ,  Edward E. Jones ,  Peng Zou ,  Ying Tang ,  Barry Lewis Chambers ,  Richard S. Ray

IPC: C23C16/00 ,  H01J37/317 ,  C01B35/00 ,  C01B35/06

CPC classification number: H01J37/3171 ,  C01B35/00 ,  C01B35/061 ,  C01P2006/88 ,  H01J2237/006 ,  H01J2237/08 ,  H01J2237/31701 ,  H01L21/265 ,  Y02P20/134

Abstract: An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

Abstract translation: 包含两个或更多个硼原子和至少一个氟原子的同位素富集的含硼化合物，其中至少一个硼原子含有所需的硼的同位素，其浓度或比例大于天然丰度浓度或比率 。 该化合物可以具有化学式B2F4。 对这些化合物的合成方法和使用这种化合物的离子注入方法进行了描述，以及储存和分配容器，其中有利地含有同位素富集的含硼化合物用于随后的分配用途。