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公开(公告)号：US07999355B2
公开(公告)日：2011-08-16
申请号：US12492201
申请日：2009-06-26
申请人： Scott Jeffrey Weigel , Mark Leonard O'Neill , Bing Han , Hansong Cheng , Manchao Xiao , Chia-Chien Lee
发明人： Scott Jeffrey Weigel , Mark Leonard O'Neill , Bing Han , Hansong Cheng , Manchao Xiao , Chia-Chien Lee
IPC分类号： H01L21/3105
CPC分类号： H01L21/3121 , C23C18/122 , C23C18/1245 , C23C18/14 , H01L21/02164 , H01L21/02219 , H01L21/02282 , H01L21/316
摘要： The present invention is a process for spin-on deposition of a silicon dioxide-containing film under oxidative conditions for gap-filling in high aspect ratio features for shallow trench isolation used in memory and logic circuit-containing semiconductor substrates, such as silicon wafers having one or more integrated circuit structures contained thereon, comprising the steps of: providing a semiconductor substrate having high aspect ratio features; contacting the semiconductor substrate with a liquid formulation comprising a low molecular weight aminosilane; forming a film by spreading the liquid formulation over the semiconductor substrate; heating the film at elevated temperatures under oxidative conditions. Compositions for this process are also set forth.
摘要翻译： 本发明是一种用于在氧化条件下用于间隙填充的含二氧化硅的膜的沉积方法，用于在存储器和含逻辑电路的半导体衬底中使用的浅沟槽隔离的高纵横比特征中，例如具有 包含其中的一个或多个集成电路结构，包括以下步骤：提供具有高纵横比特征的半导体衬底; 使半导体衬底与包含低分子量氨基硅烷的液体制剂接触; 通过在半导体衬底上铺展液体制剂形成膜; 在氧化条件下在升高的温度下加热薄膜。 还介绍了这一过程的组成。
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32.发明授权Methods for depositing metal films onto diffusion barrier layers by CVD or ALD processes 失效通过CVD或ALD工艺将金属膜沉积到扩散阻挡层上的方法公开(公告)号：US07985449B2
公开(公告)日：2011-07-26
申请号：US11738187
申请日：2007-04-20
IPC分类号： C23C16/06
CPC分类号： H01L21/76843 , C23C14/58 , C23C14/5846 , H01L21/28556 , H01L21/3205 , H01L21/32051 , H01L21/76856 , H01L21/76876
摘要： A process is described for depositing a metal film on a substrate surface having a diffusion barrier layer deposited thereupon. In one embodiment of the present invention, the process includes: providing a surface of the diffusion barrier layer that is substantially free of an elemental metal and forming the metal film on at least a portion of the surface via deposition by using a organometallic precursor. In certain embodiments, the diffusion barrier layer may be exposed to an adhesion promoting agent prior to or during at least a portion of the forming step. Suitable adhesion promoting agents include nitrogen, nitrogen-containing compounds, carbon-containing compounds, carbon and nitrogen containing compounds, silicon-containing compounds, silicon and carbon containing compounds, silicon, carbon, and nitrogen containing compounds, or mixtures thereof. The process of the present invention provides substrates having enhanced adhesion between the diffusion barrier layer and the metal film.
摘要翻译： 描述了在其上沉积有扩散阻挡层的衬底表面上沉积金属膜的方法。 在本发明的一个实施方案中，该方法包括：提供基本上不含元素金属的扩散阻挡层的表面，并通过使用有机金属前体沉积在至少部分表面上形成金属膜。 在某些实施方案中，扩散阻挡层可以在形成步骤的至少一部分之前或期间暴露于粘合促进剂。 合适的粘合促进剂包括氮，含氮化合物，含碳化合物，含碳和氮的化合物，含硅化合物，含硅和碳的化合物，硅，碳和氮的化合物或其混合物。 本发明的方法提供了在扩散阻挡层和金属膜之间具有增强的粘附性的基底。
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33.发明授权Methods for depositing metal films on diffusion barrier layers by CVD or ALD processes 失效通过CVD或ALD工艺在扩散阻挡层上沉积金属膜的方法公开(公告)号：US07311946B2
公开(公告)日：2007-12-25
申请号：US10428447
申请日：2003-05-02
CPC分类号： H01L21/76843 , C23C14/58 , C23C14/5846 , H01L21/28556 , H01L21/3205 , H01L21/32051 , H01L21/76856 , H01L21/76876
摘要： A process is described for depositing a metal film on a substrate surface having a diffusion barrier layer deposited thereupon. In one embodiment of the present invention, the process includes: providing a surface of the diffusion barrier layer that is substantially free of an elemental metal and forming the metal film on at least a portion of the surface via deposition by using a organometallic precursor. In certain embodiments, the diffusion barrier layer may be exposed to an adhesion promoting agent prior to or during at least a portion of the forming step. Suitable adhesion promoting agents include nitrogen, nitrogen-containing compounds, carbon-containing compounds, carbon and nitrogen containing compounds, silicon-containing compounds, silicon and carbon containing compounds, silicon, carbon, and nitrogen containing compounds, or mixtures thereof. The process of the present invention provides substrates having enhanced adhesion between the diffusion barrier layer and the metal film.
摘要翻译： 描述了在其上沉积有扩散阻挡层的衬底表面上沉积金属膜的方法。 在本发明的一个实施方案中，该方法包括：提供基本上不含元素金属的扩散阻挡层的表面，并通过使用有机金属前体沉积在至少部分表面上形成金属膜。 在某些实施方案中，扩散阻挡层可以在形成步骤的至少一部分之前或期间暴露于粘合促进剂。 合适的粘合促进剂包括氮，含氮化合物，含碳化合物，含碳和氮的化合物，含硅化合物，含硅和碳的化合物，硅，碳和氮的化合物或其混合物。 本发明的方法提供了在扩散阻挡层和金属膜之间具有增强的粘附性的基底。
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34.发明授权公开(公告)号：US07101530B2
公开(公告)日：2006-09-05
申请号：US10430246
申请日：2003-05-06
申请人： Guido P. Pez , Aaron R. Scott , Alan C. Cooper , Hansong Cheng
发明人： Guido P. Pez , Aaron R. Scott , Alan C. Cooper , Hansong Cheng
CPC分类号： C01B3/0015 , Y02E60/328
摘要： Processes are provided for the storage and release of hydrogen by means of a substantially reversible catalytic hydrogenation of extended pi-conjugated substrates which include large polycyclic aromatic hydrocarbons, polycyclic aromatic hydrocarbons with nitrogen heteroatoms, polycyclic aromatic hydrocarbons with oxygen heteroatoms, polycyclic aromatic hydrocarbons with alkyl, alkoxy, ketone, ether or polyether substituents, pi-conjugated molecules comprising 5 membered rings, pi-conjugated molecules comprising six and five membered rings with nitrogen or oxygen hetero atoms, and extended pi-conjugated organic polymers. The hydrogen, contained in the at least partially hydrogenated form of the extended pi-conjugated system, can be facilely released for use by a catalytic dehydrogenation of the latter in the presence of a dehydrogenation catalyst which can be effected by lowering the hydrogen gas pressure, generally to pressures greater than 0.1 bar or raising the temperature to less than 250° C. or less, or by a combination of these two process parameters.
摘要翻译： 提供了通过扩展的π-共轭底物的基本可逆的催化氢化来提供氢的方法，其包括大的多环芳烃，具有氮杂原子的多环芳烃，具有氧杂原子的多环芳烃，具有烷基的多环芳烃 烷氧基，酮，醚或聚醚取代基，包含5元环的π-共轭分子，包含具有氮或氧杂原子的六元和五元环的π-共轭分子和延伸的π-共轭有机聚合物。 包含在延伸的π-共轭体系的至少部分氢化形式中的氢可以通过在脱氢催化剂的存在下通过催化脱氢来容易地释放使用，所述脱氢催化剂可以通过降低氢气压力来实现， 通常压力大于0.1巴或将温度升高到小于250℃或更低，或通过这两个工艺参数的组合。
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