METHOD AND SYSTEM FOR THERMAL TREATMENT OF SUBSTRATES
    32.
    发明申请
    METHOD AND SYSTEM FOR THERMAL TREATMENT OF SUBSTRATES 审中-公开
    基板热处理方法及系统

    公开(公告)号:US20120055916A1

    公开(公告)日:2012-03-08

    申请号:US13036915

    申请日:2011-02-28

    IPC分类号: H05B3/68 H05B1/00

    CPC分类号: H05B3/68

    摘要: A rapid temperature change (RTC) system includes a bake plate assembly including a heat spreader; a heater substrate coupled to the heat spreader; and a heater layer coupled to the heater substrate. The RTC system also includes a passive chill structure positioned adjacent the bake plate assembly. The passive chill structure is moveable to make physical contact with the heater layer. The passive chill structure includes a chill plate and a thermal pad coupled to the chill plate. The RTC system further includes an active chill structure positioned adjacent the passive chill structure. The passive chill structure is moveable to make physical contact with the active chill structure.

    摘要翻译: 快速温度变化(RTC)系统包括包括散热器的烘烤板组件; 联接到散热器的加热器基板; 以及耦合到所述加热器基板的加热器层。 RTC系统还包括邻近烘烤板组件定位的被动冷却结构。 被动冷却结构可移动以与加热器层物理接触。 被动冷却结构包括冷却板和耦合到冷却板的散热垫。 RTC系统还包括邻近被动冷却结构定位的主动冷却结构。 被动冷却结构可移动以与主动冷却结构物理接触。

    APPARATUS FOR SUPPORTING A SUBSTRATE DURING SEMICONDUCTOR PROCESSING OPERATIONS
    33.
    发明申请
    APPARATUS FOR SUPPORTING A SUBSTRATE DURING SEMICONDUCTOR PROCESSING OPERATIONS 审中-公开
    用于在半导体加工操作期间支撑基板的装置

    公开(公告)号:US20090179366A1

    公开(公告)日:2009-07-16

    申请号:US12015060

    申请日:2008-01-16

    IPC分类号: B25B11/00

    摘要: An apparatus for supporting a substrate during semiconductor processing includes a substrate support structure having a first surface, a second surface opposing the first surface, and a groove recessed into the first surface and defining a peripheral portion of the substrate support structure. The substrate support structure is substantially free of guide pins. The apparatus also includes an annular sealing member coupled to the groove and a plurality of proximity pins projecting to a first height above the first surface. The apparatus further includes a plurality of purge ports passing from the second surface to the first surface, a plurality of vacuum ports passing from the second surface to the first surface, and a heating mechanism coupled to the substrate support structure.

    摘要翻译: 一种用于在半导体处理期间支撑衬底的装置包括具有第一表面,与第一表面相对的第二表面的衬底支撑结构以及凹入第一表面并限定衬底支撑结构的周边部分的凹槽。 衬底支撑结构基本上没有引导销。 该装置还包括联接到凹槽的环形密封构件和突出到第一表面上方的第一高度的多个接近销。 所述设备还包括从所述第二表面到所述第一表面通过的多个清洗端口,从所述第二表面到所述第一表面通过的多个真空端口,以及联接到所述基板支撑结构的加热机构。

    METHOD AND SYSTEM FOR PERFORMING ELECTROSTATIC CHUCK CLAMPING IN TRACK LITHOGRAPHY TOOLS
    34.
    发明申请
    METHOD AND SYSTEM FOR PERFORMING ELECTROSTATIC CHUCK CLAMPING IN TRACK LITHOGRAPHY TOOLS 审中-公开
    轨道切割工具中静电切割夹具的方法和系统

    公开(公告)号:US20090109595A1

    公开(公告)日:2009-04-30

    申请号:US11933152

    申请日:2007-10-31

    IPC分类号: H01L21/683

    CPC分类号: H01L21/6831

    摘要: A method of clamping/declamping a semiconductor wafer on an electrostatic chuck in ambient air includes disposing the semiconductor wafer at a predetermined distance above a dielectric surface of the electrostatic chuck having one or more electrodes and applying a first voltage greater than a predetermined threshold to the one or more electrodes of the electrostatic chuck for a first time period. The method includes reducing the first voltage to a second voltage substantially equal to a self bias potential of the semiconductor wafer after the first time period. The method includes maintaining the second voltage for a second time period and adjusting the second voltage to a third voltage characterized by a polarity opposite to that of the first voltage and a magnitude smaller than the predetermined threshold. The method includes reducing the third voltage to a fourth voltage substantially equal to the second voltage after a third time period.

    摘要翻译: 在环境空气中将静电卡盘上的半导体晶片夹紧/放大的方法包括将半导体晶片设置在具有一个或多个电极的静电卡盘的电介质表面之上的预定距离处,并将大于预定阈值的第一电压施加到 静电卡盘的一个或多个电极第一时间段。 该方法包括在第一时间段之后将第一电压降低到基本上等于半导体晶片的自偏压电位的第二电压。 该方法包括将第二电压维持第二时间段,并将第二电压调整到第三电压,其特征在于具有与第一电压相反的极性和小于预定阈值的幅度。 该方法包括在第三时间段之后将第三电压降低到基本上等于第二电压的第四电压。

    Method and System for Detecting Substrate Temperature in a Track Lithography Tool
    35.
    发明申请
    Method and System for Detecting Substrate Temperature in a Track Lithography Tool 审中-公开
    轨迹平版印刷工具中底物温度检测方法与系统

    公开(公告)号:US20080267257A1

    公开(公告)日:2008-10-30

    申请号:US11741121

    申请日:2007-04-27

    申请人: Harald Herchen

    发明人: Harald Herchen

    IPC分类号: G01K11/20 F24J3/00

    CPC分类号: G01K11/20 G01K11/3213

    摘要: A device for measuring a temperature of a semiconductor wafer comprises a structure adapted to support the semiconductor wafer. The structure has an upper end and a lower end. The upper end contacts the wafer. A photoluminescent material is adapted to emit an emission light energy in response to the temperature of the wafer. A light source is adapted to emit an excitation light energy. The light source is optically coupled to the photoluminescent material. A detector is adapted to measure the emission light energy emitted from the photoluminescent material so as to determine the temperature of the wafer. In specific embodiments, the photoluminescent material may be positioned near the upper end of the structure to measure the temperature of the wafer while the wafer is supported with the structure. The structure may comprise a proximity pin and an optically transparent material. The light source and the detector may be positioned near the lower end of the structure and optically coupled to the photoluminescent material.

    摘要翻译: 用于测量半导体晶片的温度的装置包括适于支撑半导体晶片的结构。 该结构具有上端和下端。 上端接触晶片。 光致发光材料适于响应于晶片的温度发射发光光能。 光源适于发射激发光能。 光源光学耦合到光致发光材料。 检测器适于测量从光致发光材料发射的发射光能,以便确定晶片的温度。 在具体实施例中,光致发光材料可以位于结构的上端附近,以在晶片被该结构支撑的同时测量晶片的温度。 该结构可以包括接近销和光学透明材料。 光源和检测器可以定位在结构的下端附近并光学耦合到光致发光材料。

    METHOD AND SYSTEM FOR DETECTION OF WAFER CENTERING IN A TRACK LITHOGRAPHY TOOL
    37.
    发明申请
    METHOD AND SYSTEM FOR DETECTION OF WAFER CENTERING IN A TRACK LITHOGRAPHY TOOL 失效
    用于检测轨迹扫描工具中的波浪中心的方法和系统

    公开(公告)号:US20080168673A1

    公开(公告)日:2008-07-17

    申请号:US11763352

    申请日:2007-06-14

    IPC分类号: G01D21/00

    CPC分类号: G01D5/342

    摘要: A system for measuring substrate concentricity includes a substrate support member adapted to rotate a substrate around a substantially vertical axis. The substrate includes a mounting surface and a process surface. The system also includes a spin cup positioned below the substrate and a translatable arm mounted a predetermined distance above the process surface of the substrate. The translatable arm is adapted to translate along a radius of the substrate. The system further includes an optical emitter mounted on the translatable arm and an optical detector mounted on the translatable arm.

    摘要翻译: 用于测量衬底同心度的系统包括适于围绕基本垂直轴线旋转衬底的衬底支撑构件。 衬底包括安装表面和工艺表面。 该系统还包括位于基底下方的旋转杯,以及安装在衬底的工艺表面上方预定距离的可平移臂。 可平移臂适于沿着基底的半径平移。 该系统还包括安装在可平移臂上的光发射器和安装在可平移臂上的光学探测器。

    METHOD AND SYSTEM TO MEASURE AND COMPENSATE FOR SUBSTRATE WARPAGE DURING THERMAL PROCESSING
    38.
    发明申请
    METHOD AND SYSTEM TO MEASURE AND COMPENSATE FOR SUBSTRATE WARPAGE DURING THERMAL PROCESSING 审中-公开
    在热处理过程中测量和补偿衬底温度的方法和系统

    公开(公告)号:US20080153182A1

    公开(公告)日:2008-06-26

    申请号:US11777929

    申请日:2007-07-13

    IPC分类号: H01L21/324

    摘要: A method of performing a thermal process using a bake plate of a track lithography tool. The bake plate includes a plurality of heater zones. The method includes providing a first drive signal to a first electrode in electrical communication with a process surface of the bake plate. The first electrode is associated with a first heater zone of the plurality of heater zones and each of the plurality of heater zones is adapted to receive a control voltage. The method also includes moving a semiconductor substrate toward the process surface of the bake plate, receiving a first response signal from the first electrode, processing the first response signal to determine a first capacitance value associated with a first gap between the first electrode and a first portion of the semiconductor substrate, and providing a measurement signal related to the first capacitance value.

    摘要翻译: 使用轨道光刻工具的烘烤板进行热处理的方法。 烘烤板包括多个加热器区域。 该方法包括向与烘烤板的处理表面电连通的第一电极提供第一驱动信号。 第一电极与多个加热器区域的第一加热器区域相关联,并且多个加热器区域中的每一个适于接收控制电压。 该方法还包括将半导体衬底朝向烘烤板的处理表面移动,从第一电极接收第一响应信号,处理第一响应信号以确定与第一电极和第一电极之间的第一间隙相关联的第一电容值 并且提供与第一电容值相关的测量信号。

    Electric field reducing thrust plate
    39.
    发明授权
    Electric field reducing thrust plate 失效
    电场减压推力板

    公开(公告)号:US07285195B2

    公开(公告)日:2007-10-23

    申请号:US10877137

    申请日:2004-06-24

    IPC分类号: C25D17/00 C25D5/00 C25D17/10

    摘要: A method and apparatus for an electrochemical processing cell that is configured to minimize bevel and backside deposition. The apparatus includes a contact ring assembly for supporting a substrate, a thrust plate movably positioned to engage a substrate positioned on the contact pins, and a lip seal member positioned to contact the thrust plate and the contact ring to prevent fluid flow therebetween. The lip seal includes at least one bubble release channel formed therethrough. The method includes positioning an electric field barrier between a backside substrate engaging member and a frontside substrate supporting member to prevent electric field from traveling to the bevel and backside of the substrate. The electric field barrier including at least one bubble release channel formed therethrough.

    摘要翻译: 一种用于电化学处理电池的方法和装置,其被配置为最小化斜面和背面沉积。 该装置包括用于支撑基板的接触环组件,可移动地定位成接合位于接触销上的基板的止动板,以及定位成接触推力板和接触环以防止其间流体流动的唇形密封构件。 唇形密封件包括至少一个通过其形成的气泡释放通道。 该方法包括在背面基板接合构件和前侧基板支撑构件之间定位电场屏障,以防止电场行进到基板的斜面和背面。 电场屏障包括至少一个通过其形成的气泡释放通道。