公开(公告)号：US07672089B2

公开(公告)日：2010-03-02

申请号：US11611828

申请日：2006-12-15

申请人： Tsann Lin

发明人： Tsann Lin

IPC分类号： G11B5/39

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11B5/3906 ,  G11B5/3932 ,  H01F10/3254 ,  H01F10/3272

摘要： This invention provides a CPP TMR or GMR sensor with an amorphous ferromagnetic lower keeper layer and a crystalline ferromagnetic upper keeper layer. The amorphous ferromagnetic lower keeper layer strongly exchange-couples to an underlying antiferromagnetic pinning layer and planarizes its rough surface. The crystalline ferromagnetic upper keeper layer strongly antiparallel-couples to an adjacent ferromagnetic reference layer across a nonmagnetic spacer layer. The amorphous ferromagnetic lower keeper layer is preferably made of a Co—Fe—B alloy film with an Fe content high enough to ensure strong exchange-coupling to the underlying antiferromagnetic pinning layer, and with a B content high enough to ensure the formation of an amorphous phase for planarizing an otherwise rough surface due to the underlying antiferromagnetic pinning layer. The crystalline ferromagnetic upper keeper layer is preferably made of a Co—Fe alloy film with an Fe content low enough to ensure strong antiparallel-coupling to the adjacent ferromagnetic reference layer across the nonmagnetic spacer layer. The sensor is annealed at temperatures low enough to prevent the amorphous phase from transforming into a polycrystalline phase, but also high enough to maximize TMR.

摘要翻译： 本发明提供了具有非晶铁磁下保持层和结晶铁磁上保持层的CPP TMR或GMR传感器。 非晶铁磁下层保护层与下面的反铁磁钉扎层强烈交换耦合，并使其粗糙表面平坦化。 结晶铁磁上保持层在非磁性间隔层上强烈反平行耦合到相邻的铁磁参考层。 非晶铁磁下保持层优选由Fe含量足够高的Co-Fe-B合金膜制成，以确保与下面的反铁磁性钉扎层的强交换耦合，并且B含量足以确保形成 非晶相，用于平坦化由于下面的反铁磁性钉扎层而导致的粗糙表面。 结晶铁磁上保持层优选由Fe含量低的Co-Fe合金膜制成，以确保穿过非磁性间隔层与相邻铁磁参考层的强反平行耦合。 传感器在足够低的温度下退火，以防止非晶相转变为多晶相，但也足够高以使TMR最大化。

公开(公告)号：US07652855B2

公开(公告)日：2010-01-26

申请号：US11595186

申请日：2006-11-09

申请人： James Mac Freitag ,  David Eugene Heim ,  Kuok San Ho ,  Wipul Pemsiri Jayasekara ,  Kim Y. Lee ,  Tsann Lin ,  Jyh-Shuey Lo ,  Mustafa Michael Pinarbasi ,  Ching Hwa Tsang

发明人： James Mac Freitag ,  David Eugene Heim ,  Kuok San Ho ,  Wipul Pemsiri Jayasekara ,  Kim Y. Lee ,  Tsann Lin ,  Jyh-Shuey Lo ,  Mustafa Michael Pinarbasi ,  Ching Hwa Tsang

IPC分类号： G11B5/39

CPC分类号： G11B5/3932 ,  B82Y10/00 ,  B82Y25/00 ,  G11B2005/3996

摘要： A lead overlay design of a magnetic sensor is described with sensor and free layer dimensions such that the free layer is stabilized by the large demagnetization field due to the shape anisotropy. In one embodiment the giant magnetoresistive (GMR) effect under the leads is destroyed by removing the antiferromagnetic (AFM) and pinned layers above the free layer. The overlaid lead pads are deposited on the exposed spacer layer at the sides of the mask that defines the active region. In other embodiment a layer of electrically insulating material is deposited over the sensor to encapsulate it and thereby insulate it from contact with the hardbias structures. Various embodiments with self-aligned leads are also described. In a variation of the encapsulation embodiment, the insulating material is also deposited under the lead pads so the electrical current is channeled through the active region of the sensor and sidewall deposited lead pads.

摘要翻译： 用传感器和自由层尺寸描述磁传感器的引线覆盖设计，使得由于形状各向异性，自由层由大的退磁场稳定。 在一个实施例中，引线下的巨磁阻（GMR）效应通过去除自由层上方的反铁磁（AFM）和固定层而被破坏。 覆盖的引线焊盘沉积在限定有源区的掩模侧面上的暴露间隔层上。 在另一个实施例中，电绝缘材料层沉积在传感器上以将其封装并由此使其与硬质合金结构的接触绝缘。 还描述了具有自对准引线的各种实施例。 在封装实施例的变型中，绝缘材料也沉积在引线焊盘下方，使得电流通过传感器的有源区域和侧壁沉积的引线焊盘。

公开(公告)号：US07650684B2

公开(公告)日：2010-01-26

申请号：US10892581

申请日：2004-07-16

申请人： Wen-Yaung Lee ,  Tsann Lin ,  Danielle Mauri ,  Alexander Michael Zeltser

发明人： Wen-Yaung Lee ,  Tsann Lin ,  Danielle Mauri ,  Alexander Michael Zeltser

IPC分类号： G11B5/127 ,  G11B5/33 ,  C23C16/00

CPC分类号： B82Y10/00 ,  G11B5/012 ,  G11B5/3143 ,  G11B5/3163 ,  G11B5/3903 ,  Y10T29/49021 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49048

摘要： A method for fabricating a magnetic head including a spin valve sensor having a sensor layer stack that includes a pinned magnetic layer, a spacer layer formed on the pinned magnetic layer, and a free magnetic layer formed on the spacer layer. In a preferred embodiment the spacer layer is comprised of CuOx. The method includes the plasma smoothing of the upper surface of the pinned magnetic layer prior to depositing the spacer layer, and a preferred plasma gas is a mixture of argon and oxygen.

摘要翻译： 一种用于制造磁头的方法，该磁头包括具有传感器层堆叠的自旋阀传感器，所述传感器层堆叠包括钉扎磁性层，形成在钉扎磁性层上的间隔层和形成在间隔层上的自由磁性层。 在优选实施例中，间隔层由CuOx构成。 该方法包括在沉积间隔层之前对被钉扎的磁性层的上表面的等离子体平滑化，优选的等离子体气体是氩和氧的混合物。

公开(公告)号：US20090296286A1

公开(公告)日：2009-12-03

申请号：US12129120

申请日：2008-05-29

申请人： Tsann Lin

发明人： Tsann Lin

IPC分类号： G11B5/127 ,  H01L21/00

CPC分类号： G11B5/3906 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/10 ,  H01L43/12

摘要： A current-to-perpendicular-to-plane (CPP) read sensor with multiple reference layers and associated fabrication methods are disclosed. According to one embodiment, the multiple reference layers of a CPP read sensor include a first reference layer (e.g., Co—Fe) formed by a ferromagnetic polycrystalline film, a second reference layer (e.g., Co—Fe—Hf) formed by a ferromagnetic amorphous film, a third reference layer (e.g., Co—Fe—B) formed by a ferromagnetic amorphous film, and a fourth reference layer (e.g., Co—Fe) formed by a ferromagnetic polycrystalline film. A plasma treatment is applied to the fourth reference layer for surface smoothening, and no replenishment is needed as long as the fourth reference layer is not completely removed after the plasma treatment. The fourth reference layer protects the surface of the third reference layer from spin polarization deterioration caused by the plasma treatment, thereby maintaining a strong TMR or GMR effect.

摘要翻译： 公开了具有多个参考层和相关制造方法的电流对垂直平面（CPP）读取传感器。 根据一个实施例，CPP读取传感器的多个参考层包括由铁磁性多晶膜形成的第一参考层（例如，Co-Fe），由铁磁性多晶膜形成的第二参考层（例如Co-Fe-Hf） 非晶膜，由铁磁性非晶膜形成的第三参考层（例如，Co-Fe-B）和由铁磁性多晶膜形成的第四参考层（例如，Co-Fe）。 对第四参考层进行等离子体处理以进行表面平滑处理，只要第四参考层在等离子体处理后未完全去除，则不需要补充。 第四参考层保护第三参考层的表面免于由等离子体处理引起的自旋极化劣化，从而保持强的TMR或GMR效应。

公开(公告)号：US20090244791A1

公开(公告)日：2009-10-01

申请号：US12056195

申请日：2008-03-26

申请人： Tsann Lin

发明人： Tsann Lin

IPC分类号： H04B7/212

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3906 ,  H01F10/137 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295 ,  H01L43/10

摘要： The invention provides a current-perpendicular-to-plane (CPP) tunneling magnetoresistance (TMR) or giant magnetoresistance (GMR) read sensor with multiple ferromagnetic sense layers. In one embodiment of the invention, a CPP TMR read sensor comprises a first sense layer formed by a ferromagnetic polycrystalline Co—Fe film, a second sense layer formed by a ferromagnetic interstitial-type amorphous Co—Fe— B film, a third sense layer formed by a ferromagnetic substitute-type amorphous Co—Fe—X film where X is Hf, Zr or Y, and a fourth sense layer formed by a ferromagnetic Ni—Fe film. The third sense layer acts as a diffusion barrier layer to suppress Ni diffusion, thus allowing the incorporation of the Ni—Fe fourth sense layer for improving ferromagnetic properties of the multiple sense layers. The multiple sense layers induce spin-dependent scattering, thus facilitating the CPP TMR read sensor to exhibit a strong TMR effect.

摘要翻译： 本发明提供具有多个铁磁感应层的电流垂直平面（CPP）隧道磁阻（TMR）或巨磁电阻（GMR）读取传感器。 在本发明的一个实施例中，CPP TMR读取传感器包括由铁磁性多晶Co-Fe膜形成的第一感测层，由铁磁间隙型无定形Co-Fe-B膜形成的第二感测层，第三感测层 由铁磁性替代型无定形Co-Fe-X膜形成，其中X是Hf，Zr或Y，以及由铁磁性Ni-Fe膜形成的第四感测层。 第三感测层用作扩散阻挡层以抑制Ni扩散，从而允许并入Ni-Fe第四感测层以改善多感测层的铁磁性质。 多重感测层诱导自旋依赖散射，从而便于CPP TMR读取传感器表现出强烈的TMR效应。

公开(公告)号：US07467458B2

公开(公告)日：2008-12-23

申请号：US10779941

申请日：2004-02-17

申请人： Tsann Lin

发明人： Tsann Lin

IPC分类号： G11B5/127

CPC分类号： G11B5/3932 ,  Y10T29/49021 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49128 ,  Y10T29/49155

摘要： Methods of making a read sensor with a selectively deposited lead layers are disclosed. In one illustrative example, the method includes the acts of forming a plurality of read sensor layers over a wafer; forming a monolayer photoresist to mask the plurality of read sensor layers in a central region; ion milling to remove the unmasked plurality of read sensor layers in side regions to thereby form a read sensor in the central region; depositing longitudinal bias layers in the side regions; and depositing a silicon reactant layer over the longitudinal bias layers in the side regions. After removing the monolayer photoresist, a silicon reduction process and a hydrogen reduction process are sequentially performed for the selective depositions of the lead material. In the silicon reduction process, tungsten hexafluoride (WF6) and argon (Ar) gases are passed over the wafer to thereby selectively deposit a relatively thin W film only on the Si reactant layer in the side regions through the following chemical reaction: 2WF6+3Si→2W+3SiF4. In the hydrogen reduction process, WF6 and hydrogen (H2) gases are passed over the wafer to thereby selectively deposit a relatively thick W film only on the W film in the side regions through the following chemical reaction: WF6+3H2→W+6HF.

摘要翻译： 公开了制造具有选择性沉积引线层的读取传感器的方法。 在一个说明性示例中，该方法包括在晶片上形成多个读取传感器层的动作; 形成单层光致抗蚀剂以掩蔽中心区域中的多个读取传感器层; 离子研磨以去除侧面区域中未掩蔽的多个读取传感器层，从而在中心区域形成读取传感器; 在侧面区域中沉积纵向偏置层; 以及在侧面区域中的纵向偏压层上沉积硅反应物层。 在去除单层光致抗蚀剂之后，依次进行硅还原法和氢还原法，用于选择性沉积铅材料。 在硅还原过程中，六氟化钨（WF6）和氩（Ar）气体通过晶片，从而通过以下化学反应选择性地在侧面区域的Si反应物层上沉积相对薄的W膜：2WF6 + 3Si - > 2W + 3SiF4。 在氢还原过程中，WF6和氢（H2）气体通过晶片，从而通过以下化学反应选择性地在侧区域的W膜上沉积相对较厚的W膜：WF6 + 3H2-> W + 6HF 。

公开(公告)号：US20080158741A1

公开(公告)日：2008-07-03

申请号：US11618527

申请日：2006-12-29

申请人： Tsann Lin

发明人： Tsann Lin

IPC分类号： G11B5/33

CPC分类号： G11B5/3912 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  H01F10/30 ,  H01F10/3272 ,  H01F41/302

摘要： A current-perpendicular-to-plane (CPP) magnetoresistance sensor and a method for forming a current-perpendicular-to-plane (CPP) magnetoresistance sensor. The method includes providing a ferromagnetic shield layer and disposing one or more seed layers on the ferromagnetic shield layer. The method also includes disposing a pinning layer on the one or more seed layers, wherein the pinning layer excludes PtMn, and disposing a pinned layer on the pinning layer. The shield layer, each of the one or more seed layers, the pinning layer, and the pinned layer are comprised of compounds having face-centered-cubic structures.

摘要翻译： 电流垂直平面（CPP）磁阻传感器和形成电流 - 垂直平面（CPP）磁阻传感器的方法。 该方法包括提供铁磁屏蔽层并在铁磁屏蔽层上设置一个或多个晶种层。 所述方法还包括在所述一个或多个晶种层上设置钉扎层，其中所述钉扎层排除PtMn，并且将钉扎层设置在钉扎层上。 屏蔽层，一个或多个种子层中的每一个，钉扎层和被钉扎层由具有面心立方结构的化合物组成。

公开(公告)号：US20080144234A1

公开(公告)日：2008-06-19

申请号：US11611828

申请日：2006-12-15

申请人： Tsann Lin

发明人： Tsann Lin

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11B5/3906 ,  G11B5/3932 ,  H01F10/3254 ,  H01F10/3272

摘要： This invention provides a CPP TMR or GMR sensor with an amorphous ferromagnetic lower keeper layer and a crystalline ferromagnetic upper keeper layer. The amorphous ferromagnetic lower keeper layer strongly exchange-couples to an underlying antiferromagnetic pinning layer and planarizes its rough surface. The crystalline ferromagnetic upper keeper layer strongly antiparallel-couples to an adjacent ferromagnetic reference layer across a nonmagnetic spacer layer. The amorphous ferromagnetic lower keeper layer is preferably made of a Co—Fe—B alloy film with an Fe content high enough to ensure strong exchange-coupling to the underlying antiferromagnetic pinning layer, and with a B content high enough to ensure the formation of an amorphous phase for planarizing an otherwise rough surface due to the underlying antiferromagnetic pinning layer. The crystalline ferromagnetic upper keeper layer is preferably made of a Co—Fe alloy film with an Fe content low enough to ensure strong antiparallel-coupling to the adjacent ferromagnetic reference layer across the nonmagnetic spacer layer. The sensor is annealed at temperatures low enough to prevent the amorphous phase from transforming into a polycrystalline phase, but also high enough to maximize TMR.

摘要翻译： 本发明提供了具有非晶铁磁下保持层和结晶铁磁上保持层的CPP TMR或GMR传感器。 非晶铁磁下层保护层与下面的反铁磁钉扎层强烈交换耦合，并使其粗糙表面平坦化。 结晶铁磁上保持层在非磁性间隔层上强烈反平行耦合到相邻的铁磁参考层。 非晶铁磁下保持层优选由Fe含量足够高的Co-Fe-B合金膜制成，以确保与下面的反铁磁性钉扎层的强交换耦合，并且B含量足以确保形成 非晶相，用于平坦化由于下面的反铁磁性钉扎层而导致的粗糙表面。 结晶铁磁上保持层优选由Fe含量低的Co-Fe合金膜制成，以确保穿过非磁性间隔层与相邻铁磁参考层的强反平行耦合。 传感器在足够低的温度下退火，以防止非晶相转变为多晶相，但也足够高以使TMR最大化。

公开(公告)号：US07324311B2

公开(公告)日：2008-01-29

申请号：US10857095

申请日：2004-05-28

申请人： Kim Y. Lee ,  Tsann Lin

发明人： Kim Y. Lee ,  Tsann Lin

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/39

摘要： A magnetoresistive sensor having a trackwidth defined by AFM biasing layers disposed beneath a free layer of the sensor. The present invention provides a current in plane magnetoresistive sensor that includes a non-magnetic, electrically conductive layer in a trackwidth region. The non-magnetic, electrically conductive layer can be for example Ta, but could be some other material. This non-magnetic, electrically conductive layer has first and second laterally opposed sides and a planar upper surface. First and second insulating layers are formed at each of the sides of the non-magnetic, electrically conductive layer, and bias layers extend laterally outward from the insulation layers. The bias layers can be constructed of either an antiferromagnetic (AFM) material or could be constructed of a hard magnetic material such as CoPtCr. The bias layers have planar upper surfaces that are coplanar with the upper surface of the non-magnetic, electrically conductive layer.

摘要翻译： 具有由设置在传感器的自由层下方的AFM偏置层限定的轨道宽度的磁阻传感器。 本发明提供一种电流平面磁阻传感器，其包括轨道宽度区域中的非磁性导电层。 非磁性导电层可以是例如Ta，但可以是一些其它材料。 该非磁性导电层具有第一和第二横向相对的侧面和平坦的上表面。 第一和第二绝缘层形成在非磁性导电层的每个侧面，并且偏压层从绝缘层横向向外延伸。 偏置层可以由反铁磁（AFM）材料构成，或者可以由诸如CoPtCr的硬磁材料构成。 偏置层具有与非磁性导电层的上表面共面的平面上表面。

公开(公告)号：US20070217082A1

公开(公告)日：2007-09-20

申请号：US11376537

申请日：2006-03-15

申请人： Tsann Lin

发明人： Tsann Lin

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3929 ,  B82Y10/00 ,  B82Y25/00 ,  G11B2005/3996

摘要： A read sensor stabilized by bidirectional anisotropy is disclosed. The read sensor includes a longitudinal flux-closure structure comprising an antiferromagnetic pinning layer, a ferromagnetic bias layer, a nonmagnetic spacer layer, and a ferromagnetic sense layer. In this longitudinal flux-closure structure, the antiferromagnetic pinning layer directly couples to the ferromagnetic bias layer inducing strong unidirectional anisotropy, and also indirectly couples to the ferromagnetic sense layer inducing weak unidirectional anisotropy. In addition, the ferromagnetic bias layer antiparallel-couples to the ferromagnetic sense layer across the nonmagnetic spacer layer inducing optimal bidirectional anisotropy. The magnetization of the ferromagnetic bias layer thus remains rigidly pinned mainly due to the strong unidirectional anisotropy, while the magnetization of the ferromagnetic sense layer can rotate freely and stably due to the optimal bidirectional anisotropy.

摘要翻译： 公开了通过双向各向异性稳定的读取传感器。 读取传感器包括纵向磁通闭合结构，其包括反铁磁性钉扎层，铁磁偏置层，非磁性间隔层和铁磁感应层。 在这种纵向磁通闭合结构中，反铁磁钉扎层直接耦合到铁磁偏置层，引起强的单向各向异性，并且还间接耦合到铁磁感应层，引起弱的单向各向异性。 此外，铁磁偏置层跨越非磁性间隔层反并联到铁磁感测层，引起最佳的双向各向异性。 因此，铁磁偏置层的磁化主要由于单向各向异性强而被固定地固定，而由于最佳的双向各向异性，铁磁感应层的磁化可以自由而稳定地旋转。