公开(公告)号：US07453254B2

公开(公告)日：2008-11-18

申请号：US10565984

申请日：2004-07-23

Applicant: Heribert Weber ,  Doris Schielein ,  Christian Krummel ,  Christoph Schelling

Inventor： Heribert Weber ,  Doris Schielein ,  Christian Krummel ,  Christoph Schelling

IPC: G01N27/00 ,  G01N27/12

CPC classification number: G01N27/12 ,  G01N27/128

Abstract: A chemical sensor has a substrate, a first metallization plane on the substrate, an electrode structure formed in the first metallization plane, a passivation layer applied to the first metallization plane and formed with contact holes, a sensitive ceramic layer on the passivation layer and in the contact holes, and a bond-promoting layer configured as a second metallization plane and between the passivation layer and the ceramic layer.

Abstract translation: 化学传感器具有衬底，衬底上的第一金属化平面，形成在第一金属化平面中的电极结构，钝化层施加到第一金属化平面并形成有接触孔，钝化层上的敏感陶瓷层 所述接触孔和构造为第二金属化平面并且在所述钝化层和所述陶瓷层之间的增粘层。

公开(公告)号：US20080093694A1

公开(公告)日：2008-04-24

申请号：US12001289

申请日：2007-12-10

Applicant: Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Thorsten Pannek ,  Frank Schafer

Inventor： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Thorsten Pannek ,  Frank Schafer

IPC: H01L29/02 ,  H01L21/02

CPC classification number: B81C1/00182 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C2201/0115 ,  B81C2201/0136 ,  G01L9/0042

Abstract: In a method for manufacturing a semiconductor component having a semiconductor substrate, a flat, porous diaphragm layer and a cavity underneath the porous diaphragm layer are produced to form unsupported structures for a component. In a first approach, the semiconductor substrate may receive a doping in the diaphragm region that is different from that of the cavity. This permits different pore sizes and/or porosities to be produced, which is used in producing the cavity for improved etching gas transport. Also, mesopores may be produced in the diaphragm region and nanopores may be produced as an auxiliary structure in what is to become the cavity region.

Abstract translation: 在制造具有半导体衬底的半导体部件的方法中，制造平坦的多孔隔膜层和多孔隔膜层下方的空腔，以形成用于部件的无支撑结构。 在第一种方法中，半导体衬底可以在膜片区域中接收不同于空腔的掺杂。 这允许产生不同的孔径和/或孔隙率，其用于制造用于改善蚀刻气体输送的空腔。 此外，可以在隔膜区域中产生中孔，并且可以在将要成为空腔区域的地方制造纳米孔作为辅助结构。

公开(公告)号：US07306966B2

公开(公告)日：2007-12-11

申请号：US10486182

申请日：2002-07-25

Applicant: Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Thorsten Pannek ,  Frank Schäfer

Inventor： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Thorsten Pannek ,  Frank Schäfer

IPC: H01L21/00

CPC classification number: B81C1/00182 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C2201/0115 ,  B81C2201/0136 ,  G01L9/0042

Abstract: In a method for manufacturing a semiconductor component having a semiconductor substrate, a flat, porous diaphragm layer and a cavity underneath the porous diaphragm layer are produced to form unsupported structures for a component. In a first approach, the semiconductor substrate may receive a doping in the diaphragm region that is different from that of the cavity. This permits different pore sizes and/or porosities to be produced, which is used in producing the cavity for improved etching gas transport. Also, mesopores may be produced in the diaphragm region and nanopores may be produced as an auxiliary structure in what is to become the cavity region.

Abstract translation: 在制造具有半导体衬底的半导体部件的方法中，制造平坦的多孔隔膜层和多孔隔膜层下方的空腔，以形成用于部件的无支撑结构。 在第一种方法中，半导体衬底可以在膜片区域中接收不同于空腔的掺杂。 这允许产生不同的孔径和/或孔隙率，其用于制造用于改善蚀刻气体输送的空腔。 此外，可以在隔膜区域中产生介孔，并且可以在将要成为空腔区域的地方制造纳米孔作为辅助结构。

公开(公告)号：US07300854B2

公开(公告)日：2007-11-27

申请号：US10451775

申请日：2001-12-06

Applicant: Hubert Benzel ,  Heribert Weber ,  Frank Schaefer

Inventor： Hubert Benzel ,  Heribert Weber ,  Frank Schaefer

IPC: H01L21/76 ,  H01L21/20 ,  H01L21/00

CPC classification number: B81C1/00492 ,  B81B2201/0235 ,  B81B2203/0315 ,  B81C2201/0115 ,  Y10S438/96

Abstract: A method of producing a semiconductor component, e.g., a multilayer semiconductor component, and a semiconductor component produced by this method, where the semiconductor component has, e.g., a mobile mass, i.e., an oscillator structure.A method easily and inexpensively produce a micromechanical component having monocrystalline oscillator structures, such as an acceleration sensor or a rotational rate sensor for example, by surface micromechanics, a first porous layer is formed in the semiconductor component in a first step and a cavity, i.e., a cavern, is formed beneath or out of the first porous layer in the semiconductor component in a second step.

Abstract translation: 制造半导体元件的方法，例如多层半导体元件，以及通过该方法制造的半导体元件，其中半导体元件具有例如移动质量，即振荡器结构。 一种容易且廉价地制造具有单晶振荡器结构的微机械部件，例如加速度传感器或旋转速率传感器，例如通过表面微机械，在第一步骤和空腔中在半导体部件中形成第一多孔层，即 在第二步骤中，在半导体部件中的第一多孔层的下面或外面形成有洞穴。

公开(公告)号：US20070222006A1

公开(公告)日：2007-09-27

申请号：US11700709

申请日：2007-01-30

Applicant: Heribert Weber ,  Christoph Schelling

Inventor： Heribert Weber ,  Christoph Schelling

IPC: H01L29/82

CPC classification number: H04R19/016

Abstract: A micromechanical component which includes a substrate; a first rigid electrode system situated on or in the substrate; a second electrode system suspended on the substrate; an intermediate space provided between the first electrode system and the second electrode system; the second electrode system being mounted on the suspension post in an elastically deflectable manner with respect to the first electrode system such that the capacitance of a capacitor formed by the first electrode system, the second electrode system, and the intermediate space may be modified.

Abstract translation: 一种微机械部件，其包括基板; 第一刚性电极系统，位于或在基底上; 悬浮在基板上的第二电极系统; 设置在所述第一电极系统和所述第二电极系统之间的中间空间; 第二电极系统相对于第一电极系统以可弹性偏转的方式安装在悬架上，使得可以修改由第一电极系统，第二电极系统和中间空间形成的电容器的电容。

公开(公告)号：US07160750B2

公开(公告)日：2007-01-09

申请号：US10473762

申请日：2002-02-21

Applicant: Hubert Benzel ,  Heribert Weber ,  Frank Schaefer

Inventor： Hubert Benzel ,  Heribert Weber ,  Frank Schaefer

IPC: H01L21/00

CPC classification number: B81C1/00047 ,  B81B2201/0278 ,  B81C2201/0115 ,  B81C2201/0139

Abstract: A method for manufacturing a semiconductor component, such as, for example, a multilayer semiconductor component including a micromechanical component, such as, for example, a heat transfer sensor having a semiconductor substrate of silicon, and a sensor region. For inexpensive manufacture of a thermal insulation between the semiconductor substrate and the sensor region a porous layer is provided in the semiconductor component.

Abstract translation: 一种半导体部件的制造方法，例如包括微机械部件的多层半导体部件，例如具有硅的半导体基板的传热传感器和传感器区域。 为了廉价地制造半导体基板和传感器区域之间的绝热，在半导体部件中设置多孔层。

公开(公告)号：US07148077B2

公开(公告)日：2006-12-12

申请号：US10970069

申请日：2004-10-19

Applicant: Matthias Fuertsch ,  Stefan Pinter ,  Heribert Weber ,  Frank Fischer ,  Lars Metzger ,  Christoph Schelling ,  Frieder Sundermeier

Inventor： Matthias Fuertsch ,  Stefan Pinter ,  Heribert Weber ,  Frank Fischer ,  Lars Metzger ,  Christoph Schelling ,  Frieder Sundermeier

IPC: H01L21/00

CPC classification number: B81B3/007 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C2201/0167

Abstract: A micromechanical structural element, having a very stable diaphragm, implemented in a pure front process and in a layer construction on a substrate. The layer construction includes at least one sacrificial layer and one diaphragm layer above the sacrificial layer, which is structured for laying bare the diaphragm and generating stabilizing elements on the diaphragm, at least one recess being generated for a stabilizing element of the diaphragm. The structure generated in the sacrificial layer is then at least superficially closed with at least one material layer being deposited above the structured sacrificial layer, this material layer forming at least a part of the diaphragm layer and being structured to generate at least one etch hole for etching the sacrificial layer, which is removed from the region under the etch hole, the diaphragm and the at least one stabilizing element being laid bare, a cavity being created under the diaphragm.

Abstract translation: 具有非常稳定的隔膜的微机械结构元件以纯正的前工艺和基底上的层结构实现。 该层结构包括至少一个牺牲层和牺牲层上方的一个隔膜层，其被构造用于铺设隔膜并在隔膜上产生稳定元件，为隔膜的稳定元件产生至少一个凹槽。 然后在牺牲层中产生的结构至少被表面封闭，其中至少一个材料层沉积在结构化牺牲层的上方，该材料层形成隔膜层的至少一部分并被构造成产生至少一个蚀刻孔 蚀刻从蚀刻孔下方的区域去除的牺牲层，隔膜和至少一个稳定元件被裸露，在隔膜下面形成空腔。

公开(公告)号：US20060057755A1

公开(公告)日：2006-03-16

申请号：US11221520

申请日：2005-09-07

Applicant: Heribert Weber

Inventor： Heribert Weber

IPC: H01L21/00

CPC classification number: B81C1/00158 ,  B81B2201/0278 ,  B81B2203/0315

Abstract: A micromechanical component having a silicon substrate; a cavity provided in the substrate; and a diaphragm, provided on the surface of the substrate, which closes the cavity; the diaphragm featuring a silicon-oxide layer having an opening that is formed by silicon-oxide wedges pointing to each other; and the diaphragm having at least one closing layer which closes the opening. Also, a suitable manufacturing method.

Abstract translation: 具有硅衬底的微机械部件; 设置在所述基板中的空腔; 以及设置在所述基板的表面上的隔膜，其关闭所述空腔; 所述隔膜的特征在于具有通过彼此指向的氧化硅楔形成的开口的氧化硅层; 并且所述隔膜具有封闭所述开口的至少一个封闭层。 另外，合适的制造方法。

公开(公告)号：US20050199041A1

公开(公告)日：2005-09-15

申请号：US10514211

申请日：2002-11-14

Applicant: Heribert Weber ,  Christian Krummel

Inventor： Heribert Weber ,  Christian Krummel

IPC: G01N27/02 ,  G01N27/12 ,  G01N27/22

CPC classification number: G01N27/128

Abstract: The invention relates to a sensor assembly for measuring a gas concentration, in particular CO, H2, NOx and/or hydrocarbons. The aim of the invention is to permit an accurate measurement by relatively simple means, ii particular at low cost. To achieve this, the sensor assembly is provided with an insulation material that is applied to the substrate (2) and comprises one or more insulation layers (4, 6, 8, 10), at least one first electrode structure (12, 13) that is provided in or on the insulation material, at least one second electrode structure (14, 15) that is provided in or on the insulation material and is placed at a vertical distance from the first electrode structure, a gas-sensitive layer (16), which borders the first electrode structure (12, 13) and the second electrode structure (14, 15) and a heating conductor structure (7) that is located in the insulation material (4, 6, 8, 10).

Abstract translation: 本发明涉及一种用于测量气体浓度的传感器组件，特别是CO，H 2 O，NO x和/或烃。 本发明的目的是允许通过相对简单的手段进行精确的测量，特别是以低成本。 为了实现这一点，传感器组件设置有施加到基板（2）并且包括一个或多个绝缘层（4,6,8,10），至少一个第一电极结构（12,13）的绝缘材料， 设置在所述绝缘材料中或绝缘材料上的至少一个第二电极结构（14,15），其设置在所述绝缘材料中或绝缘材料上并且与所述第一电极结构垂直距离放置，气敏层（16,15） ），其与第一电极结构（12,13）和第二电极结构（14,15）接合，并且位于绝缘材料（4,6,8,10）中的加热导体结构（7）。

公开(公告)号：US20050006235A1

公开(公告)日：2005-01-13

申请号：US10885196

申请日：2004-07-06

Applicant: Matthias Fuertsch ,  Heribert Weber ,  Christoph Schelling

Inventor： Matthias Fuertsch ,  Heribert Weber ,  Christoph Schelling

IPC: G01P5/12 ,  G01F1/684 ,  G01F1/692 ,  G01F1/696 ,  G01N27/26 ,  G01P15/00 ,  H05B1/02

CPC classification number: G01P15/008 ,  G01F1/684 ,  G01F1/6845 ,  G01F1/696

Abstract: A sensor element has at least one heater structure, at least one first circuit trace being provided via which current is injected into the heater structure; at least one second circuit trace being provided via which the current is coupled out of the heater structure, and an arrangement for detecting the resistances of individual sections of the heater structure. According to the present invention, the arrangement for detecting the resistances includes additional, high-resistance measuring lines by which the voltage is tapped directly at the individual segments of the heater structure.

Abstract translation: 传感器元件具有至少一个加热器结构，提供至少一个第一电路迹线，电流被注入到加热器结构中; 提供至少一个第二电路迹线，电流被耦合到加热器结构之外，以及用于检测加热器结构的各个部分的电阻的装置。 根据本发明，用于检测电阻的装置包括附加的高电阻测量线，通过该测量线直接在加热器结构的各个部分上被窃听。