公开(公告)号：US08759136B2

公开(公告)日：2014-06-24

申请号：US13431399

申请日：2012-03-27

Applicant: Hubert Benzel ,  Heribert Weber

Inventor： Hubert Benzel ,  Heribert Weber

IPC: H01L29/84

CPC classification number: G01L9/0042 ,  G01L9/0045 ,  G01L9/0054 ,  G01P15/0802 ,  G01P15/123 ,  G01P2015/084

Abstract: An electrically insulating sheathing for a piezoresistor and a semiconductor material are provided such that the piezoresistor is able to be used in the high temperature range, e.g., for measurements at higher ambient temperatures than 200° C. A doped resistance area is initially laterally delineated by at least one circumferential essentially vertical trench and is undercut by etching over the entire area. An electrically insulating layer is then created on the wall of the trench and the undercut area, so that the resistance area is electrically insulated from the adjacent semiconductor material by the electrically insulating layer.

Abstract translation: 提供了用于压电电阻器和半导体材料的电绝缘护套，使得压敏电阻器能够在高温范围内使用，例如用于在高于200℃的较高环境温度下测量。掺杂电阻区域最初由 至少一个周向基本上垂直的沟槽，并且通过在整个区域上的蚀刻而被切削。 然后在沟槽的壁和底切区域上形成电绝缘层，使得电阻区域通过电绝缘层与相邻的半导体材料电绝缘。

公开(公告)号：US08679975B2

公开(公告)日：2014-03-25

申请号：US13004599

申请日：2011-01-11

Applicant: Jochen Reinmuth ,  Barbara Will ,  Heribert Weber

Inventor： Jochen Reinmuth ,  Barbara Will ,  Heribert Weber

IPC: H01L21/60

CPC classification number: H01L21/3081 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/033 ,  B81C1/00404 ,  B81C1/00626 ,  H01L21/0334 ,  H01L21/76229

Abstract: A method is described for creating at least one recess in a semiconductor component, in particular a micromechanical or electrical semiconductor component, having the following steps: applying at least one mask to the semiconductor component, forming at least one lattice having at least one or more lattice openings in the mask over the recess to be formed, the lattice opening or lattice openings being formed as a function of the etching rate and/or the dimensioning of the recess to be formed; forming the recess below the lattice.

Abstract translation: 描述了一种用于在半导体部件，特别是微机电或电半导体部件中形成至少一个凹部的方法，其具有以下步骤：将至少一个掩模施加到半导体部件，形成至少一个具有至少一个或多个 在要形成的凹部上的掩模中的格子孔，形成作为蚀刻速率和/或要形成的凹部的尺寸的函数的格子孔或格子孔; 在网格下面形成凹陷。

公开(公告)号：US08659099B2

公开(公告)日：2014-02-25

申请号：US13586576

申请日：2012-08-15

Applicant: Jochen Reinmuth ,  Heribert Weber

Inventor： Jochen Reinmuth ,  Heribert Weber

IPC: H01L29/84

CPC classification number: G01P15/0802 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81C1/00626 ,  B81C2201/0132 ,  B81C2203/0136 ,  G01C19/5783

Abstract: A method for manufacturing a micromechanical structure includes: forming a first insulation layer above a substrate; forming a first micromechanical functional layer on the first insulation layer; forming multiple first trenches in the first micromechanical functional layer, which trenches extend as far as the first insulation layer; forming a second insulation layer on the first micromechanical functional layer, which second insulation layer fills up the first trenches; forming etch accesses in the second insulation layer, which etch accesses locally expose the first micromechanical functional layer; and etching the first micromechanical functional layer through the etch accesses, the filled first trenches and the first insulation layer acting as an etch stop.

Abstract translation: 一种制造微机械结构的方法包括：在基板上形成第一绝缘层; 在所述第一绝缘层上形成第一微机械功能层; 在所述第一微机械功能层中形成多个第一沟槽，所述沟槽延伸到所述第一绝缘层; 在所述第一微机械功能层上形成第二绝缘层，所述第二绝缘层填充所述第一沟槽; 在所述第二绝缘层中形成蚀刻访问，所述蚀刻访问局部暴露所述第一微机械功能层; 并且通过蚀刻访问蚀刻第一微机械功能层，填充的第一沟槽和用作蚀刻停止层的第一绝缘层。

公开(公告)号：US08607447B2

公开(公告)日：2013-12-17

申请号：US13004427

申请日：2011-01-11

Applicant: Jochen Reinmuth ,  Heribert Weber

Inventor： Jochen Reinmuth ,  Heribert Weber

IPC: H01L23/488 ,  H01L21/768

CPC classification number: B81B7/0006 ,  B81B2207/096 ,  H01L21/743 ,  H01L21/764 ,  H01L21/7682 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/14 ,  H01L2924/1461 ,  Y10T29/49147 ,  Y10T29/49155 ,  Y10T29/49165 ,  Y10T29/4922 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A method for providing and connecting a first contact area to at least one second contact area on a substrate, in particular in the case of a semiconductor component, which includes providing at least one insulation layer on the substrate, forming an opening in the at least one insulation layer over at least one insulation trench of a first contact area, applying at least one metal layer to the insulation layer, forming the first and second contact areas in the at least one metal layer and at least one printed conductor between the two contact areas, and forming the insulation trench.

Abstract translation: 一种用于将第一接触区域提供并连接到衬底上的至少一个第二接触区域的方法，特别是在半导体部件的情况下，其包括在所述衬底上提供至少一个绝缘层，至少在所述衬底上形成开口 在第一接触区域的至少一个绝缘沟槽上的一个绝缘层，将至少一个金属层施加到所述绝缘层，在所述至少一个金属层中形成所述第一和第二接触区域，以及在所述两个接触件之间形成至少一个印刷导体 区域，并形成绝缘沟槽。

公开(公告)号：US20120038030A1

公开(公告)日：2012-02-16

申请号：US13198651

申请日：2011-08-04

Applicant: Jens Frey ,  Heribert Weber ,  Eckhard Graf ,  Roman Schlosser

Inventor： Jens Frey ,  Heribert Weber ,  Eckhard Graf ,  Roman Schlosser

IPC: H01L29/41 ,  H01L21/762 ,  H01L29/06

CPC classification number: H01L21/76898 ,  H01L21/02118 ,  H01L21/02318 ,  H01L21/486 ,  H01L23/49827 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method is described for filling cavities in wafers, the cavities being open to a predetermined surface of the wafer, including the following steps: applying a lacquer-like filling material to the predetermined surface of the wafer; heating the wafer at a first temperature; driving out gas bubbles enclosed in the filling material by heating the wafer under vacuum at a second temperature which is equal to or higher than the first temperature; and curing the filling material by heating the wafer at a third temperature which is higher than the second temperature. Furthermore, also described is a blind hole filled using such a method and general 3D cavities as well as a wafer having insulation trenches of a silicon via filled using such a method.

Abstract translation: 描述了一种用于在晶片中填充空腔的方法，空腔朝向晶片的预定表面开放，包括以下步骤：将漆状填充材料施加到晶片的预定表面; 在第一温度下加热晶片; 通过在等于或高于第一温度的第二温度下在真空下加热晶片来驱除封闭在填充材料中的气泡; 以及通过在高于第二温度的第三温度下加热晶片来固化填充材料。 此外，还描述了使用这种方法和一般3D空腔填充的盲孔以及具有使用这种方法填充的硅通孔的绝缘沟槽的晶片。

公开(公告)号：US20100307247A1

公开(公告)日：2010-12-09

申请号：US12793179

申请日：2010-06-03

Applicant: Heribert Weber

Inventor： Heribert Weber

IPC: G01P15/10 ,  B23P17/04

CPC classification number: B81B3/0078 ,  B81B2201/0235 ,  B81C2203/0109 ,  G01P15/08 ,  G01P15/0802 ,  G01P15/125 ,  Y10T29/49826

Abstract: A micromechanical acceleration sensor for a transport device, in particular a motor vehicle, having a seismic mass. The seismic mass includes an auxiliary mass, and the auxiliary mass is composed of a different material than the seismic mass. Also described is a method for manufacturing an acceleration sensor for a transport device, in particular a motor vehicle, having a seismic mass, an auxiliary mass being provided on/in the seismic mass when forming the seismic mass. Also described is an assembly, apparatus, or device, in particular for a motor vehicle. The assembly, apparatus, or device has a micromechanical acceleration sensor as described, or an acceleration sensor manufactured as described.

Abstract translation: 一种用于具有地震质量的运输装置，特别是机动车辆的微机械加速度传感器。 地震质量包括辅助质量，辅助质量由与地震质量不同的材料组成。 还描述了一种在形成地震质量时，用于制造具有地震质量的运输装置，特别是机动车辆的加速度传感器的方法，所述运动装置具有地震质量，在质量块上/在地震质量块中提供辅助质量。 还描述了一种组件，装置或装置，特别是用于机动车辆。 组件，装置或装置具有如上所述的微机械加速度传感器或如上所述制造的加速度传感器。

公开(公告)号：US07833405B2

公开(公告)日：2010-11-16

申请号：US10450362

申请日：2001-12-13

Applicant: Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaeffer

Inventor： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaeffer

IPC: B23H3/00 ,  C23F1/00 ,  B31D3/00 ,  C03C25/68 ,  H01L21/00

CPC classification number: B81C1/00182 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C2201/0114 ,  B81C2201/0115 ,  B81C2201/0178

Abstract: A micromechanical component is described which includes a substrate; a monocrystalline layer, which is provided above the substrate and which has a membrane area; a cavity that is provided underneath the membrane area; and one or more porous areas, which are provided inside the monocrystalline layer and which have a doping that is higher than that of the surrounding layer.

Abstract translation: 描述了一种微机械部件，其包括基板; 单晶层，其设置在基板上方并具有膜面积; 设置在膜区域下方的空腔; 以及一个或多个多孔区域，其设置在单晶层内部并且具有高于周围层的掺杂。

公开(公告)号：US20100133630A1

公开(公告)日：2010-06-03

申请号：US12597137

申请日：2008-04-08

Applicant: Roland Scheuerer ,  Heribert Weber ,  Eckhard Graf

Inventor： Roland Scheuerer ,  Heribert Weber ,  Eckhard Graf

IPC: H01L29/84 ,  H01L21/30

CPC classification number: B81C1/00095 ,  H01L21/76898 ,  H01L23/481

Abstract: A method for manufacturing a micromechanical component is proposed. In this context, at least one trench structure having a depth less than the substrate thickness is to be produced in a substrate. In addition, an insulating layer and a filler layer are produced or applied on a first side of the substrate. The filler layer comprises a filler material that substantially fills up the trench structure. A planar first side of the substrate is produced by way of a subsequent planarization within a plane of the filler layer or of the insulating layer or of the substrate. A further planarization of the second side of the substrate is then accomplished. A micromechanical component that is manufactured in accordance with the method is also described.

Abstract translation: 提出了一种制造微机械部件的方法。 在本上下文中，在衬底中产生具有小于衬底厚度的深度的至少一个沟槽结构。 此外，在基板的第一面上制造或施加绝缘层和填充层。 填充层包括基本上填充沟槽结构的填充材料。 衬底的平面第一侧通过在填充层或绝缘层或衬底的平面内的随后的平坦化产生。 然后完成衬底的第二侧的进一步的平坦化。 还描述了根据该方法制造的微机械部件。

公开(公告)号：US20100089868A1

公开(公告)日：2010-04-15

申请号：US12450659

申请日：2008-04-08

Applicant: Roland Scheuerer ,  Heribert Weber ,  Eckhard Graf

Inventor： Roland Scheuerer ,  Heribert Weber ,  Eckhard Graf

IPC: B81C1/00 ,  B44C1/22

CPC classification number: B81C1/00333 ,  B81B2203/033 ,  B81C1/0015 ,  B81C2201/0197

Abstract: A method for producing a micromechanical component is proposed, a trench structure being substantially completely filled up by a first filler layer, and a first mask layer being applied on the first filler layer, on which in turn a second filler layer and a second mask layer are applied. A micromechanical component is also proposed, the first filler layer filling up the trench structure of the micromechanical component and at the same time forming a movable sensor structure.

Abstract translation: 提出了一种用于制造微机械部件的方法，其中沟槽结构基本上被第一填充层完全填充，第一掩模层被施加在第一填料层上，第二掩模层又在第二填料层和第二掩模层 被应用。 还提出了微机械部件，第一填充层填充微机械部件的沟槽结构，同时形成可移动的传感器结构。

公开(公告)号：US20100025786A1

公开(公告)日：2010-02-04

申请号：US12086951

申请日：2006-11-15

Applicant: Peter Schmollngruber ,  Hans Artmann ,  Thomas Wagner ,  Heribert Weber

Inventor： Peter Schmollngruber ,  Hans Artmann ,  Thomas Wagner ,  Heribert Weber

IPC: H01L29/84 ,  H01L21/30

CPC classification number: B81C1/00158 ,  B81B3/0081 ,  B81C2201/014

Abstract: A method for manufacturing a diaphragm, on a semiconductor substrate, includes the method operations or tasks of a) providing a semiconductor substrate, b) producing trenches in the semiconductor substrate, webs made of semiconductor substrate remaining between the trenches, c) producing an oxide layer on the walls of the trenches with the aid of a thermal oxidation method, d) producing access openings in a cover layer produced in a preceding method operation or task on the semiconductor substrate, to expose the semiconductor substrate in the area of the webs, e) isotropic etching of the semiconductor substrate exposed in method operation or task d) using a method selective to the oxide layer and to the cover layer, at least one cavity being produced in the webs below the cover layer, which is laterally delimited by the oxide layer of at least one trench, and f) depositing a sealing layer to seal the access openings in the cover layer.

Abstract translation: 一种在半导体衬底上制造隔膜的方法包括以下方法操作或任务：a）提供半导体衬底，b）在半导体衬底中制造沟槽，保留在沟槽之间的由半导体衬底制成的网，c）产生氧化物 借助于热氧化方法在沟槽的壁上形成层; d）在半导体衬底上的前述方法操作或任务中产生的覆盖层中产生进入开口，以在幅材的区域中露出半导体衬底， e）在方法操作或任务中暴露的半导体衬底的各向同性蚀刻d）使用对氧化物层和覆盖层选择性的方法，在覆盖层下方的纤维网中产生至少一个空腔， 氧化物层，以及f）沉积密封层以密封覆盖层中的进入开口。