摘要:
A linear oscillator and an electric toothbrush capable of emitting a low noise and of being assembled compact are provided. The linear oscillator, which reciprocates a shaft in an axial direction thereof, includes a plunger movable together with the shaft in the axial direction of the shaft, an elastic member for applying an axially acting resilient force to the plunger, an electromagnetic driving unit operable to reciprocate the plunger in the axial direction of the shaft at a resonant frequency when an alternating current is supplied thereto, and a fixing member restricting rotation of the plunger about an axis thereof within a predetermined angle. The electric toothbrush includes the linear oscillator and a brush head attached to the shaft for use in brushing teeth.
摘要:
Crystalline superfine particles capable of emitting light depending upon a time-rate-of-change of a stress and controlled in grain size in the range from 5 nm to 100 nm are complexed with another material such as resin. The crystalline superfine particles are manufactured by using aggregates of molecules, i.e. inverted micelles, which orient hydrophilic groups of surfactant molecules inward and hydrophobic groups outward in a nonpolar solvent and which contain metal ions of a metal for forming the crystalline superfine particles dissolved in water inside the inverted micelles. Alternatively, they are manufactured by using inverted micelles enveloping precursor superfine particles, in which precursor superfine particles are enveloped in water inside the inverted micelles. The crystalline superfine particles are excellent in dispersibility in another material to be complexed, enhanced in emission efficiency and usable to make a transparent stress emission material. The complex material obtained is used to manufacture artificial light-emitting hair structures, artificial light-emitting skin, artificial light-emitting bodies, artificial light-emitting fabrics, and others.
摘要:
A Co silicide layer having a low resistance and a small junction leakage current is formed on the surface of the gate electrode, source and drain of MOSFETS by silicidizing a Co film deposited on a main plane of a wafer by sputtering using a high purity Co target having a Co purity of at least 99.99% and Fe and Ni contents of not greater than 10 ppm, preferably having a Co purity of 99.999%.
摘要:
Aspects of the invention provide a projector capable of comparatively easily achieving a contrast ratio higher than the original contrast ratio of the liquid-crystal light valve by a simple mechanism. The illumination light modulated by liquid-crystal light valves, i.e., image light, can be combined together in a cross dichroic prism, and then light intensity of suitable pixels is reduced by a proper amount by a liquid-crystal light valve, and then sent to a projection lens. The image light entering the projection lens can be projected to a projection surface. Because the light intensity of the image light formed by the liquid-crystal light valves is appropriately attenuated at suitable pixel areas by the liquid-crystal light valve, image light projection with a contrast ratio exceeding by far the contrast ratio achievable by the liquid-crystal light valves alone is possible due to cumulative light-intensity adjustment.
摘要:
A connector includes contacts each having a contact portion, an elastic portion and a fulcrum portion between the contact portion and a connection portion, and a pressure receiving portion; a housing fixing the contacts; and a slider having urging portions pivotally moved between the connection and pressure receiving portions of the contacts to urging the contact portions against the circuit board, thereby achieving reliable connection and miniaturization of the connector. In an aspect, the housing is formed on the side of a board insertion opening with a recessed portion for conducting the board. In another aspect, the contact includes upper and lower contact portions one above the other arranged alternately staggered so as to be connected to a circuit board having contact portions alternately staggered, so that no defective connection occurs, even if the circuit board is inserted erroneously upside down. In a further aspect, the connector further includes locking members having an engaging portion which engages an anchoring portion of the circuit board to prevent the circuit board from being removed. In one aspect, contacts of two kinds are inserted into the housing from opposite sides, respectively so that these contacts of the two kinds are into contact with the contact portions on respective surfaces of the circuit board. In a further aspect, moreover, a plate-shaped piece is provided in opposition to the contact portions of the contacts to prevent the housing from being deformed.
摘要:
A manufacturing method of an endless metal belt having metal rings built up and differing in circumference, includes the following steps of: a first circumference correction step of expanding each of the metal rings; and a second circumference correction step of expanding each of the metal rings after conducting a solution heat treatment to the expanded metal ring. In the manufacturing method, by executing the first circumference correction step and the second circumference correction step before and after the solution heat treatment, respectively, an expansion quantity for setting a circumference of each of the metal rings to become a predetermined length is attained.
摘要:
An implantation step of a dopant ion for forming source and drain regions (S and D) is divided into one implantation of a dopant ion for forming a p/n junction with a well region (3), and one implantation of a dopant ion that does not influence a position of the p/n junction between the source and drain regions (S and D) and the well region with a shallow implantation depth and a large implantation amount. After conducting an activation heat treatment of the dopant, a surface of the source/drain region is made into cobalt silicide 12, so that the source/drain region (S and D) can have a low resistance, and a p/n junction leakage can be reduced.
摘要:
An implantation step of a dopant ion for forming source and drain regions (S and D) is divided into one implantation of a dopant ion for forming a p/n junction with a well region (3), and one implantation of a dopant ion that does not influence a position of the p/n junction between the source and drain regions (S and D) and the well region with a shallow implantation depth and a large implantation amount. After conducting an activation heat treatment of the dopant, a surface of the source/drain region is made into cobalt silicide 12, so that the source/drain region (S and D) can have a low resistance, and a p/n junction leakage can be reduced.