摘要:
A structure of an electron beam apparatus having shielding properties for shielding against an environmental magnetic field is provided. The electron beam apparatus comprises a mirror barrel for housing a magnetic lens for converging an electron beam onto a specimen and a specimen chamber for housing the specimen, wherein a non-magnetic material having conductivity is used as a material for at least one of the mirror barrel and a main body of the specimen chamber. The material for the mirror barrel or the main body of the specimen chamber is an aluminum alloy and a thickness of a sidewall of the mirror barrel or the main body of the specimen chamber is 10 mm or more. A magnetic plate having a thickness smaller than that of the sidewall of the mirror barrel or the main body of the specimen chamber is provided on an inner sidewall of the mirror barrel or the main body of the specimen chamber.
摘要:
An image forming method and a charged particle beam apparatus suitable for suppressing the inclination of charging when scanning a two-dimensional area with a charged particle beam. A third scanning line located between a first scanning line and a second scanning line is scanned. After the first, second and third scanning lines have been scanned, a plurality of scanning lines are scanned between the first and third scanning lines and between the second and third scanning lines.
摘要:
A method and a device are disclosed for suppressing error in electrostatic charge amount or defocus on the basis of electrostatic charge storage due to electron beam scanning when measuring the electrostatic charge amount of the sample or a focus adjustment amount by scanning the electron beam. An electrostatic charge measurement method, a focus adjustment method, or a scanning electron microscope for measuring an electrostatic charge amount or controlling an application voltage to the sample changes the application voltage to the energy filter while moving the scanning location of the electron beam on the sample.
摘要:
A sample measuring method and a charged particle beam apparatus are provided which remove contaminants, that have adhered to a sample in a sample chamber of an electron microscope, to eliminate adverse effects on the subsequent manufacturing processes. To achieve this objective, after the sample measurement or inspection is made by using a charged particle beam, contaminants on the sample are removed before the next semiconductor manufacturing process. This allows the contaminants adhering to the sample in the sample chamber to be removed and therefore failures or defects that may occur in a semiconductor fabrication process following the measurement and inspection can be minimized.
摘要:
An image forming method and a charged particle beam apparatus suitable for suppressing the inclination of charging when scanning a two-dimensional area with a charged particle beam. A third scanning line located between a first scanning line and a second scanning line is scanned. After the first, second and third scanning lines have been scanned, a plurality of scanning lines are scanned between the first and third scanning lines and between the second and third scanning lines.
摘要:
An object of this invention is to provide a charged particle beam apparatus that is capable of handling samples without adhering impurities onto the samples. In a scanning electron microscope in which a lubricant was coated on a sliding portion of a movable member that moves inside a vacuum chamber, a substance from which low molecular components were removed is used as the lubricant. It is thus possible to inhibit sample contamination and suppress the occurrence of defects in a process following measurement of the samples.
摘要:
Disclosed is a scanning electron microscope capable of performing speedy focusing by automatically measuring an electrostatic voltage of a surface of a wafer inside a specimen chamber in an accurate, and easy speedy manner, the wafer assuming different electrostatic voltages inside and outside the specimen chamber. The scanning electron microscope that controls optical systems measures an electrostatic voltage of the specimen according to an electrostatic capacitance between the both parts of the divided electrode plate, by dividing an electrode plate into two parts and switching potentials of electrodes obtained by the division with each other, an electrostatic voltage of the specimen based on an electrostatic capacitance between the both parts of the divided electrode plate. The electrode plate is used for applying a retarding voltage and arranged over a specimen.
摘要:
The present invention aims to provide a method and a device of capable of suppressing error in electrostatic charge amount or defocus on the basis of electrostatic charge storage due to electron beam scanning when measuring the electrostatic charge amount of the sample or a focus adjustment amount by scanning the electron beam.In order to achieve the above object, according to one aspect of the present invention, an electrostatic charge measurement method, a focus adjustment method, or a scanning electron microscope for measuring an electrostatic charge amount or controlling an application voltage to the sample by changing the application voltage to the energy filter while moving the scanning location of the electron beam on the sample is proposed.
摘要:
An object of this invention is to provide a charged particle beam apparatus that is capable of handling samples without adhering impurities onto the samples. In a scanning electron microscope in which a lubricant was coated on a sliding portion of a movable member that moves inside a vacuum chamber, a substance from which low molecular components were removed is used as the lubricant. It is thus possible to inhibit sample contamination and suppress the occurrence of defects in a process following measurement of the samples.
摘要:
A sample measuring method and a charged particle beam apparatus are provided which remove contaminants, that have adhered to a sample in a sample chamber of an electron microscope, to eliminate adverse effects on the subsequent manufacturing processes. To achieve this objective, after the sample measurement or inspection is made by using a charged particle beam, contaminants on the sample are removed before the next semiconductor manufacturing process. This allows the contaminants adhering to the sample in the sample chamber to be removed and therefore failures or defects that may occur in a semiconductor fabrication process following the measurement and inspection can be minimized.