公开(公告)号：US07001461B2

公开(公告)日：2006-02-21

申请号：US10656202

申请日：2003-09-08

申请人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

发明人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

IPC分类号： C30B5/00 ,  G03F1/00 ,  H01L21/20

CPC分类号： H01L29/78675 ,  B23K26/066 ,  B23K26/073 ,  B23K26/0734 ,  G02B5/02 ,  G02B5/3083 ,  G03F1/28 ,  G03F1/34 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L27/1285 ,  H01L29/66757 ,  Y10T117/10

摘要： A crystallization apparatus includes an illumination system which applies illumination light for crystallization to a non-single-crystal semiconductor film, and a phase shifter which includes first and second regions disposed to form a straight boundary and transmitting the illumination light from the illumination system by a first phase retardation therebetween, and phase-modulates the illumination light to provide a light intensity distribution having an inverse peak pattern that light intensity falls in a zone of the non-single-crystal semiconductor film containing an axis corresponding to the boundary. The phase shifter further includes a small region which extends into at least one of the first and second regions from the boundary and transmits the illumination light by a second phase retardation with respect to the at least one of the first and second regions.

公开(公告)号：US20060197093A1

公开(公告)日：2006-09-07

申请号：US11403938

申请日：2006-04-14

申请人： Yoshinobu Kimura ,  Masakiyo Matsumura ,  Yoshitaka Yamamoto ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Fumiki Nakano

发明人： Yoshinobu Kimura ,  Masakiyo Matsumura ,  Yoshitaka Yamamoto ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Fumiki Nakano

IPC分类号： H01L29/04 ,  H01L21/84

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/2026 ,  H01L29/66757 ,  H01L29/78675

摘要： A method of manufacturing a thin-film semiconductor device substrate includes a step of forming a non-single crystalline semiconductor thin film on a base layer, and an annealing step of irradiating the non-single crystalline semiconductor thin film with an energy beam to enhance crystallinity of a non-single crystalline semiconductor constituting the non-single crystalline semiconductor thin film. The annealing step includes simultaneously irradiating the non-single crystalline semiconductor thin film with a plurality of energy beams to form a plurality of unit regions each including at least one irradiated region irradiated with the energy beam and at least one non-irradiated region that is not irradiated with the energy beam.

摘要翻译： 制造薄膜半导体器件衬底的方法包括在基底层上形成非单晶半导体薄膜的步骤和用能量束照射非单晶半导体薄膜以提高结晶度的退火步骤 构成非单晶半导体薄膜的非单晶半导体。 退火步骤包括同时用多个能量束照射非单晶半导体薄膜，以形成多个单位区域，每个单位区域包括至少一个被能量束照射的照射区域和至少一个不照射的非照射区域 用能量束照射。

公开(公告)号：US06953714B2

公开(公告)日：2005-10-11

申请号：US10293939

申请日：2002-11-14

申请人： Yoshinobu Kimura ,  Masakiyo Matsumura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Yoshitaka Yamamoto ,  Hideo Koseki

发明人： Yoshinobu Kimura ,  Masakiyo Matsumura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Yoshitaka Yamamoto ,  Hideo Koseki

IPC分类号： H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L29/786 ,  H01L21/00 ,  H01L21/84

CPC分类号： H01L21/02675 ,  H01L21/02532 ,  H01L21/2026 ,  H01L21/268 ,  H01L29/66757 ,  H01L29/78675

摘要： A method for producing a thin film semiconductor device is described. In the method, a thin film layer of non-single-crystalline semiconductor, which is deposited on a base layer of glass, is processed to an island-shaped thin film layer at the time prior to the layer irradiation step. The laser irradiation to the thin film layer of non-single-crystalline semiconductor is carried out after forming an insulation film layer and a gate electrode over the island-shaped thin film layer, by using the gate electrode as the irradiation mask, whereby the center area of the island-shaped thin film layer masked by the gate electrode is crystallized, and simultaneously, the both side areas thereof which is not masked by the gate electrode are annealed. Next, a source electrode and a drain electrode is formed in the annealed areas. The implantation of impurity ion may be carried out either before or after the laser irradiation. By the above order of steps, it becomes possible to obtain a thin film semiconductor device which has small numbers of crystals and less variance of grain size of crystals for each unit of electric circuit, compared with a device produced by the conventional process. Further, the process makes it possible to be even the boundary surface between the crystallized layer and the insulation layer in a device.

摘要翻译： 对薄膜半导体器件的制造方法进行说明。 在该方法中，沉积在玻璃基底层上的非单晶半导体薄膜层在层照射步骤之前被处理成岛形薄膜层。 通过使用栅电极作为照射掩模，在岛状薄膜层上形成绝缘膜层和栅电极之后，对非单晶半导体的薄膜层进行激光照射，由此中心 由栅电极掩蔽的岛状薄膜层的区域被结晶化，同时，未被栅极电极掩蔽的两侧区域退火。 接下来，在退火区域中形成源电极和漏电极。 杂质离子的注入可以在激光照射之前或之后进行。 通过上述步骤，与通过常规方法制造的器件相比，可以获得每个电路单元具有少量晶体和较小晶体粒径变化的薄膜半导体器件。 此外，该方法使得可以在器件中甚至结晶层和绝缘层之间的边界面。

公开(公告)号：US07087505B2

公开(公告)日：2006-08-08

申请号：US10755303

申请日：2004-01-13

申请人： Yoshinobu Kimura ,  Masakiyo Matsumura ,  Yoshitaka Yamamoto ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Fumiki Nakano

发明人： Yoshinobu Kimura ,  Masakiyo Matsumura ,  Yoshitaka Yamamoto ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Fumiki Nakano

IPC分类号： H01L21/20

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/2026 ,  H01L29/66757 ,  H01L29/78675

摘要： A method of manufacturing a thin-film semiconductor device substrate includes a step of forming a non-single crystalline semiconductor thin film on a base layer, and an annealing step of irradiating the non-single crystalline semiconductor thin film with an energy beam to enhance crystallinity of a non-single crystalline semiconductor constituting the non-single crystalline semiconductor thin film. The annealing step includes simultaneously irradiating the non-single crystalline semiconductor thin film with a plurality of energy beams to form a plurality of unit regions each including at least one irradiated region irradiated with the energy beam and at least one non-irradiated region that is not irradiated with the energy beam.

公开(公告)号：US20090181483A1

公开(公告)日：2009-07-16

申请号：US12403776

申请日：2009-03-13

申请人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

发明人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

IPC分类号： H01L21/336 ,  H01L21/26 ,  H01L21/78

CPC分类号： G03B21/56 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1012

摘要： A crystallization method includes wavefront-dividing an incident light beam into a plurality of light beams, condensing the wavefront-divided light beams in a corresponding phase shift portion of a phase shift mask or in the vicinity of the phase shift portion to form a light beam having an light intensity distribution of an inverse peak pattern in which a light intensity is minimum in a point corresponding to the phase shift portion of the phase shift mask, and irradiating a polycrystalline semiconductor film or an amorphous semiconductor film with the light beam having the light intensity distribution to produce a crystallized semiconductor film.

公开(公告)号：US07692864B2

公开(公告)日：2010-04-06

申请号：US12403726

申请日：2009-03-13

申请人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

发明人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

IPC分类号： G02B27/10

CPC分类号： G03B21/56 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1012

摘要： A crystallization method includes wavefront-dividing an incident light beam into a plurality of light beams, condensing the wavefront-divided light beams in a corresponding phase shift portion of a phase shift mask or in the vicinity of the phase shift portion to form a light beam having an light intensity distribution of an inverse peak pattern in which a light intensity is minimum in a point corresponding to the phase shift portion of the phase shift mask, and irradiating a polycrystalline semiconductor film or an amorphous semiconductor film with the light beam having the light intensity distribution to produce a crystallized semiconductor film.

摘要翻译： 结晶方法包括将入射光束波前分割成多个光束，将波前划分的光束聚集在相移掩模的相应相移部分中或在相移部分附近以形成光束 具有在与相移掩模的相移部分相对应的点中光强度最小的逆峰值图案的光强度分布，以及用具有光的光束照射多晶半导体膜或非晶半导体膜 强度分布以产生结晶的半导体膜。

公开(公告)号：US07572335B2

公开(公告)日：2009-08-11

申请号：US10958396

申请日：2004-10-06

申请人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

发明人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

IPC分类号： C30B35/00

CPC分类号： H01L21/02678 ,  B23K26/066 ,  H01L21/2026 ,  H01L21/268 ,  H01L29/66757 ,  H01L29/78675 ,  Y10S117/90 ,  Y10S117/904 ,  Y10S117/905 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： A crystallization apparatus includes an illumination system which illuminates a phase-shift mask and an image-forming optical system arranged in an optical path between the phase-shift mask and a semiconductor film. The semiconductor film is irradiated with a light beam having a light intensity distribution of inverted peak patterns whose light intensity is the lowest in portions corresponding to phase shift sections to form a crystallized semiconductor film. The image-forming optical system is located to optically conjugate the phase-shift mask and the semiconductor film and has an aberration corresponding to the given wavelength range to form a light intensity distribution of inverted peak patterns with no swell of intensity in the middle portion.

摘要翻译： 结晶装置包括照射相移掩模的照明系统和布置在相移掩模和半导体膜之间的光路中的成像光学系统。 用对应于相移部分的部分的光强度最低的具有反相峰值图案的光强度分布的光束照射半导体膜，以形成结晶的半导体膜。 成像光学系统被定位为将相移掩模和半导体膜光学共轭，并且具有对应于给定波长范围的像差，以形成中间部分没有强度波动的反向峰值图案的光强度分布。

公开(公告)号：US07413608B2

公开(公告)日：2008-08-19

申请号：US11224014

申请日：2005-09-13

申请人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

发明人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

IPC分类号： C30B25/12 ,  C30B25/14

CPC分类号： H01L29/78675 ,  B23K26/066 ,  B23K26/073 ,  B23K26/0734 ,  G02B5/02 ,  G02B5/3083 ,  G03F1/28 ,  G03F1/34 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L27/1285 ,  H01L29/66757 ,  Y10T117/10

摘要： A crystallization apparatus includes an illumination system which applies illumination light for crystallization to a non-single-crystal semiconductor film, and a phase shifter which includes first and second regions disposed to form a straight boundary and transmitting the illumination light from the illumination system by a first phase retardation therebetween, and phase-modulates the illumination light to provide a light intensity distribution having an inverse peak pattern that light intensity falls in a zone of the non-single-crystal semiconductor film containing an axis corresponding to the boundary. The phase shifter further includes a small region which extends into at least one of the first and second regions from the boundary and transmits the illumination light by a second phase retardation with respect to the at least one of the first and second regions.

摘要翻译： 结晶装置包括：向非单晶半导体膜施加用于结晶的照明光的照明系统;以及移相器，其包括设置成形成直边界的第一和第二区域，并将来自照明系统的照明光透过 第一相位相位差，并且对照明光进行相位调制，以提供具有光强度落在包含对应于边界的轴的非单晶半导体膜的区域中的反峰值图案的光强度分布。 移相器还包括从边界延伸到第一和第二区域中的至少一个区域的小区域，并相对于第一和第二区域中的至少一个透射照明光第二相位延迟。

公开(公告)号：US20060213431A1

公开(公告)日：2006-09-28

申请号：US11442331

申请日：2006-05-30

申请人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

发明人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

IPC分类号： C30B11/00 ,  C30B35/00

CPC分类号： G03B21/56 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1012

摘要： A crystallization method includes wavefront-dividing an incident light beam into a plurality of light beams, condensing the wavefront-divided light beams in a corresponding phase shift portion of a phase shift mask or in the vicinity of the phase shift portion to form a light beam having an light intensity distribution of an inverse peak pattern in which a light intensity is minimum in a point corresponding to the phase shift portion of the phase shift mask, and irradiating a polycrystalline semiconductor film or an amorphous semiconductor film with the light beam having the light intensity distribution to produce a crystallized semiconductor film.

公开(公告)号：US07056626B2

公开(公告)日：2006-06-06

申请号：US10624555

申请日：2003-07-23

申请人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

发明人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

IPC分类号： G01F9/00

CPC分类号： H01L21/0268 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/066 ,  B23K26/067 ,  B23K26/073 ,  G03F1/26 ,  H01L21/2026 ,  H01L27/1285 ,  Y10T117/1004

摘要： The present invention is directed to a crystallization apparatus including an illumination system to illuminate a phase shift mask, which converts a light beam from the illumination system into a light beam that has a light intensity distribution of an inverse peak pattern having a minimum intensity in an area corresponding to a phase shift portion of the phase shift mask. The crystallization apparatus further includes an optical member to form on a predetermined plane a light intensity distribution of a concave pattern, which has a light intensity that is minimum in an area corresponding to the phase shift portion and increases toward the circumference of that area based on the light from the illumination system, and an image-forming optical system to set a surface of the polycrystalline semiconductor film or the amorphous semiconductor film or its conjugate plane and the predetermined plane to an optical conjugate relationship.

摘要翻译： 本发明涉及一种结晶装置，其包括照明系统，用于照射相移掩模，该相移掩模将来自照明系统的光束转换成具有在具有最小强度的反峰值图案的光强度分布的光束 相应于相移掩模的相移部分的区域。 结晶装置还包括光学构件，以在预定平面上形成凹形图案的光强度分布，该凹形图案的光强度在与相移部分相对应的区域中最小，并且基于 来自照明系统的光，以及将多晶半导体膜或非晶半导体膜或其共轭面和预定平面的表面设定为光学共轭关系的成像光学系统。