公开(公告)号：US20120100719A1

公开(公告)日：2012-04-26

申请号：US13377319

申请日：2010-06-17

申请人： Christophe Constancias ,  Bernard Dalzotto ,  Frank Fournel ,  Philippe Michallon ,  Hubert Moriceau ,  Valerie Pouteau

发明人： Christophe Constancias ,  Bernard Dalzotto ,  Frank Fournel ,  Philippe Michallon ,  Hubert Moriceau ,  Valerie Pouteau

IPC分类号： H01L21/31 ,  G01N3/08

CPC分类号： B81C1/00158 ,  B81B2201/0264 ,  B81B2201/047 ,  B81C2201/017

摘要： A method for determining a minimum tension compensation stress which will have a membrane of a thickness of less than or equal to one micrometer, secured to a frame, having, in the absence of any external stress, a desired deflection. The membrane can be made as planar as possible in absence of any external stress, and its thickness can be less than or equal to one micrometer.

摘要翻译： 一种用于确定最小张力补偿应力的方法，其将具有小于或等于1微米厚度的膜，固定到框架，在没有任何外部应力的情况下具有期望的偏转。 膜可以在没有任何外部应力的情况下制成尽可能平坦的，并且其厚度可以小于或等于1微米。

公开(公告)号：US20120088352A1

公开(公告)日：2012-04-12

申请号：US13273982

申请日：2011-10-14

申请人： Rémi Beneyton ,  Hubert Moriceau ,  Frank Fournel ,  François Rieutord ,  Yannick Le Tiec

发明人： Rémi Beneyton ,  Hubert Moriceau ,  Frank Fournel ,  François Rieutord ,  Yannick Le Tiec

IPC分类号： H01L21/762

CPC分类号： C09J5/06

摘要： The invention relates to a process for producing a bond between a first and a second substrate. The process includes preparing surfaces of the substrates to be assembled, and attaching the surfaces to form an assembly of these two surfaces, by direct molecular bonding. The assembly is then heat treated, which includes maintaining the temperature within the range of 50° C. to 100° C. for at least one hour.

摘要翻译： 本发明涉及一种用于在第一和第二基底之间产生粘结的方法。 该方法包括制备要组装的基底的表面，并且通过直接分子键合来附着表面以形成这两个表面的组合。 然后对组件进行热处理，其包括将温度保持在50℃至100℃的范围内至少1小时。

公开(公告)号：US07940477B2

公开(公告)日：2011-05-10

申请号：US12678730

申请日：2008-09-16

申请人： Mickaël Brun ,  Salim Mimouni ,  Sergio Nicoletti ,  Ludovic Poupinet ,  Hubert Moriceau

发明人： Mickaël Brun ,  Salim Mimouni ,  Sergio Nicoletti ,  Ludovic Poupinet ,  Hubert Moriceau

IPC分类号： G02B3/08 ,  G02B7/02

CPC分类号： G01Q60/22 ,  B29D11/00009 ,  B29D11/00346 ,  G01Q70/12 ,  G11B7/1374 ,  G11B7/1387

摘要： The invention generally pertains to the field of solid immersion lenses for optical applications in high resolution microscopy. The lens of the invention includes a spherical sector limited by a planar surface and an object having nanometric dimensions arranged on the planar surface at the focus of said solid immersion lens. A light-opaque layer having a central opening with nanometric dimensions can be provided on the planar surface, said opening being centred on the focus of the solid immersion lens. The nano-object can be a tube or a thread having a cylindrical shape. The lens of the invention can be made using lithography techniques.

摘要翻译： 本发明一般涉及在高分辨率显微镜中用于光学应用的固体浸没透镜领域。 本发明的透镜包括由平面表面限制的球形部分和在所述固体浸没透镜的焦点处的平面表面上具有纳米尺寸的物体。 具有纳米尺寸的中心开口的不透光层可以设置在平坦表面上，所述开口以固体浸没透镜的焦点为中心。 纳米物体可以是具有圆柱形状的管或线。 本发明的透镜可以使用光刻技术制成。

公开(公告)号：US07902038B2

公开(公告)日：2011-03-08

申请号：US10474984

申请日：2002-04-11

申请人： Bernard Aspar ,  Hubert Moriceau ,  Olivier Rayssac ,  Bruno Ghyselen

发明人： Bernard Aspar ,  Hubert Moriceau ,  Olivier Rayssac ,  Bruno Ghyselen

IPC分类号： H01L23/58

CPC分类号： B81C99/008 ,  H01L21/76254 ,  Y10S438/958

摘要： The invention relates to a method for production of a detachable substrate, comprising a method step for the production of an interface by means of fixing, using molecular adhesion, one face of a layer on one face of a substrate, in which, before fixing, a treatment stage for at least one of said faces is provided, rendering the mechanical hold at the interface at such a controlled level to be compatible with a subsequent detachment.

摘要翻译： 本发明涉及一种可拆卸基板的制造方法，其特征在于，包括：通过使用分子粘合固定，在基板的一个面上的一个面的固定来制造界面的方法步骤， 提供了用于至少一个所述面部的处理台，使得在该受控水平处的界面处的机械保持与随后的分离兼容。

公开(公告)号：US07776716B2

公开(公告)日：2010-08-17

申请号：US11746297

申请日：2007-05-09

申请人： Chrystel Deguet ,  Takeshi Akatsu ,  Hubert Moriceau ,  Thomas Signamarcheix ,  Loic Sanchez

发明人： Chrystel Deguet ,  Takeshi Akatsu ,  Hubert Moriceau ,  Thomas Signamarcheix ,  Loic Sanchez

IPC分类号： H01L21/46 ,  H01L21/30

CPC分类号： H01L21/76254

摘要： A method for fabricating semiconductor on insulator wafers by providing a semiconductor substrate or a substrate that includes an epitaxial semiconductor layer as a source substrate, attaching the source substrate to a handle substrate to form a source handle assembly and detaching the source substrate at a predetermined splitting area provided inside the source substrate and being essentially parallel to its main surface, to remove a layer from the source handle assembly to thereby create the semiconductor on insulator wafer. A diffusion barrier layer, in particular, an oxygen diffusion barrier layer can be provided on the source substrate. In addition the invention relates to the corresponding semiconductor on insulator wafers that are produced by the method.

摘要翻译： 一种通过提供半导体衬底或包括外延半导体层作为源极衬底的衬底来制造绝缘体上半导体晶片的方法，将源极衬底附接到手柄衬底以形成源极手柄组件，并以预定的分裂分离源极衬底 区域设置在源极基底内并基本上平行于其主表面，以从源手柄组件移除一层，从而形成绝缘体上半导体晶片。 可以在源极基板上设置扩散阻挡层，特别是氧扩散阻挡层。 此外，本发明涉及通过该方法制造的相应的绝缘体上半导体晶片。

公开(公告)号：US07713369B2

公开(公告)日：2010-05-11

申请号：US10468223

申请日：2002-04-11

申请人： Bernard Aspar ,  Hubert Moriceau ,  Marc Zussy ,  Olivier Rayssac

发明人： Bernard Aspar ,  Hubert Moriceau ,  Marc Zussy ,  Olivier Rayssac

IPC分类号： B32B38/10

CPC分类号： H01L21/7813 ,  H01L21/6835 ,  H01L21/76254 ,  H01L21/76259 ,  H01L2221/68318 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2924/19041 ,  Y10T156/11

摘要： The invention relates to the preparation of a thin layer comprising a step in which an interface is created between a layer used to create said thin layer and a substrate, characterized in that said interface is made in such a way that it is provided with at least one first zone (Z1) which has a first level of mechanical strength, and a second zone (Z2) which has a level of mechanical strength which is substantially lower than that of the first zone. Said interface can be created by glueing surfaces which are prepared in a differentiated manner, by a layer which is buried and embrittled in a differentiated manner in said zones, or by an intermediate porous layer.

摘要翻译： 本发明涉及薄层的制备，其包括在用于产生所述薄层的层与基底之间形成界面的步骤，其特征在于所述界面以至少提供至少 具有第一级机械强度的第一区域（Z1）和具有基本上低于第一区域的机械强度水平的第二区域（Z2）。 所述界面可以通过以不同的方式制备的表面，通过在所述区域中以不同的方式被掩埋和脆化的层或通过中间多孔层来胶合表面而形成。

公开(公告)号：US07541263B2

公开(公告)日：2009-06-02

申请号：US11576259

申请日：2005-10-06

申请人： Hubert Moriceau ,  Christophe Morales ,  Marc Zussy ,  Jerome Dechamp

发明人： Hubert Moriceau ,  Christophe Morales ,  Marc Zussy ,  Jerome Dechamp

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76251 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/76259

摘要： The invention relates to a method for producing a semiconducting structure on a semiconducting substrate, one surface of which has a topology, this method including: a) a step for forming a first layer (24) in a first insulating material on said surface, b) a step for forming a second layer in a second insulating material (28), less dense than the first insulating material, with a thickness between 2.5 p and 3.5 p, c) a step for planarization of the assembly.

摘要翻译： 本发明涉及在半导体衬底上制造半导体结构的方法，其一个表面具有拓扑结构，该方法包括：a）在所述表面上形成第一绝缘材料中的第一层（24）的步骤，b ）在第二绝缘材料（28）中形成第二层的步骤，第二绝缘材料（28）的密度小于第一绝缘材料，厚度在2.5p和3.5p之间，c）用于使组件平坦化的步骤。

公开(公告)号：US07476595B2

公开(公告)日：2009-01-13

申请号：US10581111

申请日：2004-12-06

申请人： Hubert Moriceau ,  Christophe Morales ,  Lea Di Cioccio

发明人： Hubert Moriceau ,  Christophe Morales ,  Lea Di Cioccio

IPC分类号： H01L21/30 ,  H01L21/00 ,  H01L23/02 ,  H01L23/34

CPC分类号： H01L25/50 ,  H01L24/08 ,  H01L24/80 ,  H01L25/0657 ,  H01L2224/08145 ,  H01L2224/08225 ,  H01L2224/8001 ,  H01L2224/80012 ,  H01L2224/80896 ,  H01L2224/80948 ,  H01L2924/0002

摘要： A method for direct molecular adhesion of an electronic compound (6) on a polymer (4) is described. The polymer (4) is coated with a bonding layer (5), for example silicon oxide, which enables the problems caused by the presence of hydrocarbons to be overcome. The method makes it possible to produce adhesive-free three-dimensional structures (10).

摘要翻译： 描述了电子化合物（6）在聚合物（4）上直接分子粘合的方法。 聚合物（4）涂覆有结合层（5），例如氧化硅，其能够克服由烃的存在引起的问题。 该方法使得可以生产无粘合剂的三维结构（10）。

公开(公告)号：US20080296712A1

公开(公告)日：2008-12-04

申请号：US11630283

申请日：2005-06-29

申请人： Guy Feuillet ,  Hubert Moriceau ,  Stephane Pocas ,  Eric Jalaguier ,  Moussy Norbert

发明人： Guy Feuillet ,  Hubert Moriceau ,  Stephane Pocas ,  Eric Jalaguier ,  Moussy Norbert

IPC分类号： H01L21/50 ,  H01L33/00

CPC分类号： H01L27/14636 ,  H01L24/83 ,  H01L27/14634 ,  H01L33/0079 ,  H01L2224/83801 ,  H01L2224/83894 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/07811 ,  Y10T29/49126 ,  H01L2924/3512 ,  H01L2924/00

摘要： The invention relates to an assembly method to enable local electrical bonds between zones located on a face of a first substrate and corresponding zones located on a face of a second substrate, said faces being located facing each other, at least one of the substrates having a surface topography, characterised in that the method comprises steps consisting of: forming an intermediate layer comprising at least one burial layer on the face of the substrate or substrates having a surface topography to make it (them) compatible with molecular bonding of said faces of substrates to each other from a topographic point of view, the resistivity and/or thickness of the intermediate layer being chosen to enable said local electrical bonds, bringing the two faces into contact, the substrates being positioned so as to create electrical bonds between areas located on the first substrate and the corresponding areas located on the second substrate, bonding the faces of the first and second substrates by molecular bonding.

摘要翻译： 本发明涉及一种组装方法，其能够在位于第一基板的表面上的区域和位于第二基板的表面上的相应区域之间进行局部电接合，所述面彼此面对，所述基板中的至少一个具有 表面形貌，其特征在于该方法包括以下步骤：形成中间层，该中间层包含在基底表面上的至少一个埋藏层或具有表面形貌的基底，以使其（它们）与基底的分子结合相容 从地形角度来看，中间层的电阻率和/或厚度被选择为使得能够实现所述局部电接合，使两个面接触，基板被定位成在位于 所述第一基板和位于所述第二基板上的对应区域接合所述第一和第二基板的所述表面 通过分子键合。

公开(公告)号：US07268060B2

公开(公告)日：2007-09-11

申请号：US10968695

申请日：2004-10-18

申请人： Bruno Ghyselen ,  Hubert Moriceau

发明人： Bruno Ghyselen ,  Hubert Moriceau

IPC分类号： H01L21/30

CPC分类号： H01L21/3225 ,  H01L21/3226 ,  H01L21/76254 ,  H01L29/32

摘要： A method for fabricating a substrate containing a useful semiconductor layer on a support having high resistivity by: preparing a base substrate of a semiconductor material containing a controlled quantity of interstitial oxygen, heat treating the base substrate to achieve at least partial precipitation of the interstitial oxygen therein, removing a superficial layer over a controlled depth from a surface of the base substrate that intended to receive a useful layer, forming the useful layer on the surface of the base substrate, with the base substrate serving as a support for the useful layer. This method is applicable in particular to SOI substrates having high resistivity for use in forming high frequency electronic circuits.

摘要翻译： 一种在具有高电阻率的支持体上制造含有有用的半导体层的基板的方法，该方法包括：制备含有受控量的间隙氧的半导体材料的基底，热处理基底以实现间隙氧的至少部分沉淀 在基底基板的表面上，在基底基板的表面上从受控的深度去除表层，形成有用层，基底基板作为有用层的支撑体。 该方法特别适用于用于形成高频电子电路的具有高电阻率的SOI衬底。