公开(公告)号：US11768086B2

公开(公告)日：2023-09-26

申请号：US16456905

申请日：2019-06-28

Applicant: Infineon Technologies AG

Inventor： Franz Jost ,  Harald Witschnig ,  Juergen Zimmer

IPC: G01D5/16 ,  G01R33/09 ,  G01R33/00 ,  G01D3/08 ,  H10B61/00 ,  H10N59/00 ,  H10N50/00

CPC classification number: G01D5/16 ,  G01D3/08 ,  G01R33/0052 ,  G01R33/09 ,  H10B61/00 ,  H10N50/00 ,  H10N59/00

Abstract: A method for forming a sensor circuit. The method includes forming a plurality of magnetoresistive structures having a first predefined reference magnetization direction in a first common area of a common semiconductor substrate; forming a plurality of magnetoresistive structures having a second predefined reference magnetization direction in a second common area of the common semiconductor substrate; and forming electrically conductive structures electrically coupling the magnetoresistive structures having the first predefined reference magnetization direction to the magnetoresistive structures having the second predefined reference magnetization direction to form a plurality of half-bridge sensor circuits, wherein each half-bridge sensor circuit comprises a magnetoresistive structure having the first predefined reference magnetization direction electrically coupled to a second magnetoresistive structure having the second predefined reference magnetization direction.

公开(公告)号：US10712176B2

公开(公告)日：2020-07-14

申请号：US15652646

申请日：2017-07-18

Applicant: Infineon Technologies AG

Inventor： Juergen Zimmer ,  Klemens Pruegl

IPC: G01D5/16 ,  G01R33/09 ,  G01R33/02 ,  G01B7/30 ,  H04L12/877 ,  H04L12/911 ,  H04L12/927 ,  H04L12/863

Abstract: Embodiments relate to xMR sensors, in particular AMR and/or TMR angle sensors with an angle range of 360 degrees. In embodiments, AMR angle sensors with a range of 360 degrees combine conventional, highly accurate AMR angle structures with structures in which an AMR layer is continuously magnetically biased by an exchange bias coupling effect. The equivalent bias field is lower than the external rotating magnetic field and is applied continuously to separate sensor structures. Thus, in contrast with conventional solutions, no temporary, auxiliary magnetic field need be generated, and embodiments are suitable for magnetic fields up to about 100 mT or more. Additional embodiments relate to combined TMR and AMR structures. In such embodiments, a TMR stack with a free layer functioning as an AMR structure is used. With a single such stack, contacted in different modes, a high-precision angle sensor with 360 degrees of uniqueness can be realized.

公开(公告)号：US10677859B2

公开(公告)日：2020-06-09

申请号：US15956247

申请日：2018-04-18

Applicant: Infineon Technologies AG

Inventor： Wolfgang Granig ,  Juergen Zimmer

IPC: G01R33/09 ,  G01R33/00

Abstract: Embodiments relate to magnetoresistive sensors suitable for both angle and field strength sensing. In an embodiment, a sensor comprises two different magnetoresistive (xMR) sensor components for sensing two different aspects or characteristics of a magnetic field. In an embodiment, the first xMR sensor component is configured for magnetic field angle or rotation sensing, while the second xMR sensor component is configured for magnetic field strength sensing. In an embodiment, the second xMR sensor component is configured for magnetic field strength sensing in two dimensions. The second xMR sensor therefore can determine, in embodiment, whether the field sensed with respect to angle or rotation by the first xMR sensor component is of sufficient strength or meets a minimum magnitude threshold. If the minimum threshold is not met, an alarm or alert can be provided.

公开(公告)号：US09915707B2

公开(公告)日：2018-03-13

申请号：US15433524

申请日：2017-02-15

Applicant: Infineon Technologies AG

Inventor： Juergen Zimmer ,  Klemens Pruegl ,  Olaf Kuehn ,  Andreas Strasser ,  Ralf-Rainer Schledz ,  Norbert Thyssen

IPC: H01L21/00 ,  G01R33/00 ,  G01R33/09 ,  H01L43/12 ,  H01L43/08 ,  H01L27/22 ,  H01L43/02

CPC classification number: G01R33/0052 ,  G01R33/09 ,  G01R33/093 ,  G01R33/096 ,  G01R33/098 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically affecting the performance relevant magnetic field sensitive layer system while also providing comparatively uniform structure widths over a wafer, down to about 100 nm in embodiments. Embodiments can also provide xMR stacks having side walls of the performance relevant free layer system that are smooth and/or of a defined lateral geometry which is important for achieving a homogeneous magnetic behavior over the wafer.

公开(公告)号：US09733107B2

公开(公告)日：2017-08-15

申请号：US14535537

申请日：2014-11-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Juergen Zimmer ,  Klemens Pruegl

IPC: G01R33/09 ,  G01R33/02 ,  G01D5/16 ,  H04L12/877 ,  H04L12/911 ,  H04L12/927 ,  G01B7/30 ,  H04L12/863

CPC classification number: G01D5/16 ,  G01B7/30 ,  G01R33/02 ,  G01R33/09 ,  G01R33/093 ,  H04L47/525 ,  H04L47/6215 ,  H04L47/72 ,  H04L47/781 ,  H04L47/805

Abstract: Embodiments relate to xMR sensors, in particular AMR and/or TMR angle sensors with an angle range of 360 degrees. In embodiments, AMR angle sensors with a range of 360 degrees combine conventional, highly accurate AMR angle structures with structures in which an AMR layer is continuously magnetically biased by an exchange bias coupling effect. The equivalent bias field is lower than the external rotating magnetic field and is applied continuously to separate sensor structures. Thus, in contrast with conventional solutions, no temporary, auxiliary magnetic field need be generated, and embodiments are suitable for magnetic fields up to about 100 mT or more. Additional embodiments relate to combined TMR and AMR structures. In such embodiments, a TMR stack with a free layer functioning as an AMR structure is used. With a single such stack, contacted in different modes, a high-precision angle sensor with 360 degrees of uniqueness can be realized.

公开(公告)号：US09620707B2

公开(公告)日：2017-04-11

申请号：US14688177

申请日：2015-04-16

Applicant: Infineon Technologies AG

Inventor： Juergen Zimmer ,  Andreas Strasser ,  Wolfgang Raberg ,  Klemens Pruegl

IPC: H01L21/02 ,  H01L43/08 ,  H01L43/12 ,  H01L43/02 ,  H01L27/22

CPC classification number: H01L43/08 ,  H01L27/224 ,  H01L27/228 ,  H01L43/02 ,  H01L43/12

Abstract: A magnetoresistive device can include a first magnetic layer structure having a first length, a barrier layer disposed on the first magnetic layer structure, a second magnetic layer structure disposed on the barrier layer and having a second length that is less than the first length.

公开(公告)号：US20170059360A1

公开(公告)日：2017-03-02

申请号：US14840574

申请日：2015-08-31

Applicant: Infineon Technologies AG

Inventor： Juergen Zimmer ,  Hansjoerg Kuemmel ,  Harald Witschnig ,  Franz Jost ,  Hegedus Akos ,  Konrad Kapser ,  Llorenç Vallmajó i Ribas

IPC: G01D5/16 ,  G01R33/09

CPC classification number: G01D5/16 ,  G01D5/145 ,  G01R33/09 ,  G01R33/098

Abstract: A magnetic angle sensor including a first Wheatstone bridge circuit having a plurality of first magnetoresistive elements; and a second Wheatstone bridge circuit having a plurality of second magnetoresistive elements, wherein the plurality of second magnetoresistive elements have diversity with respect to the plurality of first magnetoresistive elements.

Abstract translation: 一种磁角传感器，包括具有多个第一磁阻元件的第一惠斯通电桥电路; 以及具有多个第二磁阻元件的第二惠斯通电桥电路，其中所述多个第二磁阻元件相对于所述多个第一磁阻元件具有分集。

公开(公告)号：US20160351800A1

公开(公告)日：2016-12-01

申请号：US15215631

申请日：2016-07-21

Applicant: Infineon Technologies AG

Inventor： Stefan Kolb ,  Klemens Pruegl ,  Juergen Zimmer

IPC: H01L43/14 ,  H01L43/06 ,  H01L43/08 ,  H01L43/04

CPC classification number: H01L27/22 ,  G01R33/07 ,  G01R33/09 ,  G01R33/093 ,  G01R33/098 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/552 ,  H01L43/02 ,  H01L43/04 ,  H01L43/06 ,  H01L43/08 ,  H01L43/12 ,  H01L43/14

Abstract: In the method of manufacturing a magnetoresistive sensor module, at first a composite arrangement out of a semiconductor substrate and a metal-insulator arrangement is provided, wherein a semiconductor circuit arrangement is integrated adjacent to a main surface of the semiconductor substrate into the same, wherein the metal-insulator arrangement is arranged on the main surface of the semiconductor substrate and comprises a structured metal sheet and insulation material at least partially surrounding the structured metal sheet, wherein the structured metal sheet is electrically connected to the semiconductor circuit arrangement. Then, a magnetoresistive sensor structure is applied onto a surface of the insulation material of the composite arrangement, and finally an electrical connection between the magnetoresistive sensor structure and the structured metal sheet is established, so that the magnetoresistive sensor structure is connected to the integrated circuit arrangement.

Abstract translation: 在制造磁阻传感器模块的方法中，首先提供从半导体衬底和金属 - 绝缘体布置中的复合布置，其中半导体电路布置与半导体衬底的主表面相邻地集成在其中，其中 金属绝缘体布置在半导体衬底的主表面上并且包括结构化金属片和至少部分地围绕结构化金属片的绝缘材料，其中结构化金属片电连接到半导体电路装置。 然后，将磁阻传感器结构施加到复合布置的绝缘材料的表面上，最后建立磁阻传感器结构和结构金属片之间的电连接，使得磁阻传感器结构连接到集成电路 安排。

公开(公告)号：US20160202328A1

公开(公告)日：2016-07-14

申请号：US15078429

申请日：2016-03-23

Applicant: Infineon Technologies AG

Inventor： Wolfgang Granig ,  Juergen Zimmer

IPC: G01R33/09 ,  G01R33/00

CPC classification number: G01R33/091 ,  G01R33/0047 ,  G01R33/09 ,  G01R33/093

Abstract: Embodiments relate to magnetoresistive sensors suitable for both angle and field strength sensing. In an embodiment, a sensor comprises two different magnetoresistive (xMR) sensor components for sensing two different aspects or characteristics of a magnetic field. In an embodiment, the first xMR sensor component is configured for magnetic field angle or rotation sensing, while the second xMR sensor component is configured for magnetic field strength sensing. In an embodiment, the second xMR sensor component is configured for magnetic field strength sensing in two dimensions. The second xMR sensor therefore can determine, in embodiment, whether the field sensed with respect to angle or rotation by the first xMR sensor component is of sufficient strength or meets a minimum magnitude threshold. If the minimum threshold is not met, an alarm or alert can be provided.

Abstract translation: 实施例涉及适用于角度和场强度感测的磁阻传感器。 在一个实施例中，传感器包括用于感测磁场的两个不同方面或特性的两个不同的磁阻（xMR）传感器部件。 在一个实施例中，第一xMR传感器部件被配置用于磁场角或旋转感测，而第二xMR传感器部件被配置用于磁场强度感测。 在一个实施例中，第二xMR传感器部件被配置用于二维的磁场强度感测。 因此，在实施例中，第二xMR传感器可以确定由第一xMR传感器部件相对于角度或旋转感测的场是否具有足够的强度或满足最小幅度阈值。 如果不满足最小门槛，可以提供警报或警报。

公开(公告)号：US20160099405A1

公开(公告)日：2016-04-07

申请号：US14966205

申请日：2015-12-11

Applicant: Infineon Technologies AG

Inventor： Juergen Zimmer ,  Wolfgang Raberg ,  Stephan Schmitt

IPC: H01L43/08 ,  H01L43/02 ,  H01L43/12

CPC classification number: H01L43/08 ,  H01L43/02 ,  H01L43/12

Abstract: A magnetoresistive device includes a substrate and an electrically insulating layer arranged over the substrate. The magnetoresistive device further includes a first free layer embedded in the electrically insulating layer and a second free layer embedded in the electrically insulating layer. The first free layer and the second free layer are separated by a portion of the electrically insulating layer.

Abstract translation: 磁阻器件包括衬底和布置在衬底上的电绝缘层。 磁阻器件还包括嵌入在电绝缘层中的第一自由层和嵌入电绝缘层中的第二自由层。 第一自由层和第二自由层被电绝缘层的一部分分开。