公开(公告)号：US20240194483A1

公开(公告)日：2024-06-13

申请号：US18064352

申请日：2022-12-12

Applicant: Intel Corporation

Inventor： Eungnak Han ,  Florian Gstrein ,  Gurpreet Singh

IPC: H01L21/027 ,  H01L21/033 ,  H01L21/8234 ,  H01L23/528 ,  H01L23/532 ,  H01L27/088

CPC classification number: H01L21/0274 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/823475 ,  H01L23/5283 ,  H01L23/53295 ,  H01L27/088

Abstract: A cross-linkable diblock copolymer can facilitate multi-pitch patterning for forming an IC device. The IC device may include a metal layer with different pitches. The metal layer may include a first region having a first pitch and a second region having a second pitch that is greater than the first pitch. The cross-linkable diblock copolymer may be deposited over the metal layer. The portion of the diblock copolymer over the second region may be exposed to light (e.g., UV), which causes cross-linking of functional groups in the diblock copolymer. The cross-linking may form a structure that includes an amorphous phase of the diblock copolymer. The structure may be over and aligned with the second region of the metal layer. After the structure is formed, the diblock copolymer over the first region may self-assemble and form lamellar structures that are aligned with metal lines and insulative structures in the first region.

公开(公告)号：US20220199540A1

公开(公告)日：2022-06-23

申请号：US17125232

申请日：2020-12-17

Applicant: Intel Corporation

Inventor： Gurpreet Singh ,  Eungnak Han ,  Xuanxuan Chen ,  Tayseer Mahdi ,  Marie Krysak ,  Brandon Jay Holybee ,  Florian Gstrein

IPC: H01L23/538

Abstract: Disclosed herein are guided vias in microelectronic structures. For example, a microelectronic structure may include a metallization layer including a conductive via in contact with a conductive line, wherein a center of a top surface of the conductive via is laterally offset from a center of a bottom surface of the conductive via.

公开(公告)号：US20220199420A1

公开(公告)日：2022-06-23

申请号：US17124730

申请日：2020-12-17

Applicant: INTEL CORPORATION

Inventor： Gurpreet Singh ,  Eungnak Han ,  Manish Chandhok ,  Richard E. Schenker ,  Florian Gstrein ,  Paul A. Nyhus ,  Charles Henry Wallace

IPC: H01L21/311 ,  H01L21/768

Abstract: Disclosed herein are colored gratings in microelectronic structures. For example, a microelectronic structure may include first conductive structures alternating with second conductive structures, wherein individual ones of the first conductive structures include a bottom portion and a top portion, individual cap structures are on individual ones of the second conductive structures, the bottom portions of the first conductive structures are laterally spaced apart from and aligned with the second conductive structures, and the top portions of the first conductive structures are laterally spaced apart from and aligned with the cap structures. In some embodiments, a microelectronic structure may include one or more unordered lamellar regions laterally spaced apart from and aligned with the first conductive structures.

公开(公告)号：US20210375745A1

公开(公告)日：2021-12-02

申请号：US17032517

申请日：2020-09-25

Applicant: Intel Corporation

Inventor： James Munro Blackwell ,  Robert L. Bristol ,  Xuanxuan Chen ,  Lauren Elizabeth Doyle ,  Florian Gstrein ,  Eungnak Han ,  Brandon Jay Holybee ,  Marie Krysak ,  Tayseer Mahdi ,  Richard E. Schenker ,  Gurpreet Singh ,  Emily Susan Walker

IPC: H01L23/528 ,  H01L23/522

Abstract: Disclosed herein are structures and techniques utilizing directed self-assembly for microelectronic device fabrication. For example, a microelectronic structure may include a patterned region including a first conductive line and a second conductive line, wherein the second conductive line is adjacent to the first conductive line; and an unordered region having an unordered lamellar pattern, wherein the unordered region is coplanar with the patterned region.

公开(公告)号：US20210371566A1

公开(公告)日：2021-12-02

申请号：US17313932

申请日：2021-05-06

Applicant: Intel Corporation

Inventor： Eungnak Han ,  Gurpreet Singh ,  Tayseer Mahdi ,  Florian Gstrein ,  Lauren Doyle ,  Marie Krysak ,  James Blackwell ,  Robert Bristol

IPC: C08F265/04 ,  C08F265/02 ,  G03F7/11

Abstract: A chemical composition includes a polymer chain having a surface anchoring group at a terminus of the polymer chain. The surface anchoring group is metal or dielectric selective and the polymer chain further includes at least one of a photo-acid generator, quencher, or a catalyst. In some embodiments, the surface anchoring group is metal selective or dielectric selective. In some embodiments, the polymer chain includes side polymer chains where the side polymer chains include polymers of photo-acid generators, quencher, or catalyst.