摘要:
A stage for a voltage controlled oscillator includes a first p-channel transistor having a gate defining a control node, having a source adapted to be coupled to a supply voltage, and having a drain; a second p-channel transistor having a gate coupled to the control node, having a source coupled to the supply voltage, and having a drain; a first n-channel transistor having a gate defining a first input, having a drain coupled to the drain of the first p-channel transistor and defining a first node, and having a source; a second n-channel transistor having a gate defining a second input, having a drain coupled to the drain of the second p-channel transistor and defining a second node, and having a source; a current draw; first and second loads; a first source follower having an input coupled to the first node; and a second source follower.
摘要:
A stage for a ring oscillator, the stage including a first p-channel transistor having a gate defining a control node, having a source adapted to be coupled to a supply voltage, and having a drain; a second p-channel transistor having a gate coupled to the control node, having a source coupled to the supply voltage, and having a drain; a first n-channel transistor having a gate defining a first input, having a drain coupled to the drain of the first p-channel transistor and defining a first node, and having a source; a second n-channel transistor having a gate defining a second input, having a drain coupled to the drain of the second p-channel transistor and defining a second node, and having a source; a current source coupled to the sources of the first and second n-channel transistors directing current from the sources of the first and second n-channel transistors; a first resistor coupled between the supply voltage and the drain of the first n-type transistor; a second resistor coupled between the supply voltage and drain of the second n-type transistor; a first source follower having an input coupled to the first node and having an output defining a first output of the stage; and a second source follower having an input coupled to the second node and having an output defining a second output of the stage.
摘要:
A radio frequency identification device comprises an integrated circuit including a receiver, a transmitter, and a microprocessor. The receiver and transmitter together define an active transponder. The integrated circuit is preferably a monolithic single die integrated circuit including the receiver, the transmitter, and the microprocessor. Because the device includes an active transponder, instead of a transponder which relies on magnetic coupling for power, the device has a much greater range.
摘要:
A method of using a phase lock loop to receive an oscillating input signal and produce an output signal, the phase lock loop comprising a plurality of flip-flops which are chained together, the plurality of flip-flops including a first flip-flop having a first output, including a second flip-flop having an input coupled to the first output and having a second output, and including a third flip-flop having an input coupled to the second output, the phase lock loop further comprising a control node, the method including using the flip-flops to determine time spacing between transitions to perform a frequency comparison of the output signal relative to the input signal; extracting a clock from an input digital signal; and performing phase control and adjusting the voltage on the control node of the voltage controlled oscillator.
摘要:
A communications system including a clock recovery circuit that extracts a clock signal from incoming digital data, the clock recovery circuit including a voltage controlled oscillator having a control node and having an output producing an output wave having a frequency that varies in response to a voltage applied to the control node; charge pump and loop filter circuitry that controls the rate of change of the voltage on the control node of the voltage controlled oscillator; a start-up circuit that performs frequency detection and, in conjunction with the charge pump and loop filter circuitry, adjusts the voltage on the control node of the voltage controlled oscillator; and a state machine that performs phase detection and adjusts the voltage on the control node of the voltage controlled oscillator.
摘要:
A communications system including a clock recovery circuit that extracts a clock signal from incoming digital data, the clock recovery circuit comprising: a voltage controlled oscillator having a control node and an output producing an output wave having a frequency that varies in response to a voltage applied to the control node; charge pump and loop filter circuitry that controls the rate of change of the voltage on the control node of the voltage controlled oscillator; a start-up circuit that performs frequency detection and, in conjunction with the charge pump and loop filter circuitry, adjusts the voltage on the control node of the voltage controlled oscillator; and a state machine that performs phase detection and adjusts the voltage on the control node of the voltage controlled oscillator.
摘要:
A communications system including a clock recovery circuit that extracts a clock signal from incoming digital data, the clock recovery circuit comprising:a voltage controlled oscillator having a control node and having an output producing an output wave having a frequency that varies in response to a voltage applied to the control node; charge pump and loop filter circuitry that controls the rate of change of the voltage on the control node of the voltage controlled oscillator; a start-up circuit that performs frequency detection and, in conjunction with the charge pump and loop filter circuitry, adjusts the voltage on the control node of the voltage controlled oscillator; and a state machine that performs phase detection and adjusts the voltage on the control node of the voltage controlled oscillator.
摘要:
An integrated circuit such as an SRAM or DRAM fabricated in a package having a number of external pins includes a plurality of inputs and outputs electrically coupled to the external package pins, an internal substrate that is unconnected to any of the external pins, a test mode indicator circuit having an input coupled to an external pin and an output for providing a test mode signal and a switch responsive to the test mode signal for coupling the substrate to a predetermined voltage. The predetermined voltage can either be ground, or a negative voltage introduced on a pin that is normally set to a logic zero during package level testing. The test mode signal can also be used to disable the on-chip charge pump. The test mode indicator circuit can include a super voltage indicator, an electronic key, or latch circuit in order to receive the test mode indication signal on an existing package pin.
摘要:
An integrated cirucuit is provided with a depletion mode filter capacitor, which reduces voltage spiking, while at the same time avoiding latchup problems caused by the capacitor. The depletion mode capacitor has a barrier layer which is doped to an opposite conductivity type as the integrated circuit's substrate, achieved by doping to provide an opposite difference from four valence electrons as the substrate. The barrier is formed as a part of a CMOS process, in a manner which avoids additional process steps. The capacitor is formed with one node connected to ground or substrate, and the other node directly to a power bus. The capacitor is located on open space available on the whole siliocn chip (memory as well as logic chip), particularly directly underneath the metal power bus to achieve an on-chip power bus decoupling capacitor wth capacitance in excess of 0.001 .mu.F.
摘要:
A margin test circuit (10) is provided for a semiconductor memory circuit having a plurality of memory cells (16). Each of the memory cells (16) in one row of cells (16) are interconnected to a word line (14). The margin test circuit (10) further includes a row decoder/driver (12) which receives a variable voltage (V.sub.cc *) for changing the signal level stored within a memory cell (16) to thereby determine the marginal voltage level at which the memory cell (16) will maintain storage of a signal level. The variable voltage (V.sub.cc *) is the semiconductor memory circuit main supply source (V.sub.cc) in normal operation but can be forced to a different voltage during the margin test.