UCP5
    31.
    发明申请
    UCP5 有权

    公开(公告)号:US20060088914A1

    公开(公告)日:2006-04-27

    申请号:US11283522

    申请日:2005-11-18

    CPC classification number: C07K14/4702 C07K2319/30

    Abstract: The present invention is directed to novel polypeptides having homology to certain human uncoupling proteins (“UCPs”) and to nucleic acid molecules encoding those polypeptides. Also provided herein are vectors and host cells comprising those nucleic acid sequences, chimeric polypeptide molecules comprising the polypeptides of the present invention fused to heterologous polypeptide sequences, antibodies which bind to the polypeptides of the present invention, and methods for producing the polypeptides of the present invention.

    Method of fabricating a strained silicon channel FinFET
    38.
    发明申请
    Method of fabricating a strained silicon channel FinFET 有权
    制造应变硅沟道FinFET的方法

    公开(公告)号:US20050153486A1

    公开(公告)日:2005-07-14

    申请号:US10755763

    申请日:2004-01-12

    CPC classification number: H01L29/785 H01L29/66795 H01L29/7842

    Abstract: An exemplary embodiment relates to a method of FinFET channel structure formation. The method can include providing a compound semiconductor layer above an insulating layer, providing a trench in the compound semiconductor layer, and providing a strained semiconductor layer above the compound semiconductor layer and within the trench. The method can also include removing the strained semiconductor layer from above the compound semiconductor layer, thereby leaving the strained semiconductor layer within the trench and removing the compound semiconductor layer to leave the strained semiconductor layer and form the fin-shaped channel region.

    Abstract translation: 示例性实施例涉及FinFET沟道结构形成的方法。 该方法可以包括在绝缘层之上提供化合物半导体层,在化合物半导体层中提供沟槽,并在化合物半导体层之上和沟槽内提供应变半导体层。 该方法还可以包括从化合物半导体层上方去除应变半导体层,从而将应变半导体层留在沟槽内,并去除化合物半导体层以留下应变半导体层并形成鳍状沟道区。

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