公开(公告)号：US07622370B2

公开(公告)日：2009-11-24

申请号：US10525297

申请日：2003-08-19

Applicant: James S. Im

Inventor： James S. Im

IPC: H01L21/20

CPC classification number: H01L21/02686 ,  B23K26/0622 ,  B23K26/066 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66742 ,  H01L29/78651

Abstract: A process and system for processing a thin film sample are provided. In particular, a beam generator can be controlled to emit at least one beam pulse. The beam pulse is then masked to produce at least one masked beam pulse, which is used to irradiate at least one portion of the thin film sample. With the at least one masked beam pulse, the portion of the film sample is irradiated with sufficient intensity for such portion to later crystallize. This portion of the film sample is allowed to crystallize so as to be composed of a first area and a second area. Upon the crystallization thereof, the first area includes a first set of grains, and the second area includes a second set of grains whose at least one characteristic is different from at least one characteristic of the second set of grains. The first area surrounds the second area, and is configured to allow an active region of a thin-film transistor (“TFT”) to be provided at a distance therefrom.

Abstract translation: 提供了一种用于处理薄膜样品的方法和系统。 特别地，可以控制光束发生器发射至少一个光束脉冲。 然后对光束脉冲进行掩模以产生至少一个掩模束脉冲，其用于照射薄膜样品的至少一部分。 利用至少一个掩蔽光束脉冲，膜样品的部分被照射足够的强度用于这种部分以后结晶。 允许该薄膜样品的该部分结晶，以便由第一区域和第二区域组成。 在其结晶时，第一区域包括第一组晶粒，第二区域包括第二组晶粒，其至少一个特性与第二组晶粒的至少一个特征不同。 第一区域围绕第二区域，并且被配置为允许在与其一定距离处提供薄膜晶体管（“TFT”）的有源区域。

公开(公告)号：US20090140173A1

公开(公告)日：2009-06-04

申请号：US11502056

申请日：2006-08-10

Applicant: James S. Im

Inventor： James S. Im

IPC: G21K5/00

CPC classification number: H01L28/60 ,  H01L21/76838 ,  H01L21/76894 ,  Y10S438/94 ,  Y10S438/955

Abstract: A method and apparatus for processing a thin metal layer on a substrate to control the grain size, grain shape, and grain boundary location and orientation in the metal layer by irradiating the metal layer with a first excimer laser pulse having an intensity pattern defined by a mask to have shadow regions and beamlets. Each region of the metal layer overlapped by a beamlet is melted throughout its entire thickness, and each region of the metal layer overlapped by a shadow region remains at least partially unmelted. Each at least partially unmelted region adjoins adjacent melted regions. After irradiation by the first excimer laser pulse, the melted regions of the metal layer are permitted to resolidify. During resolidification, the at least partially unmelted regions seed growth of grains in adjoining melted regions to produce larger grains. After completion of resolidification of the melted regions following irradiation by the first excimer laser pulse, the metal layer is irradiated by a second excimer laser pulse having a shifted intensity pattern so that the shadow regions overlap regions of the metal layer having fewer and larger grains. Each region of the metal layer overlapped by one of the shifted beamlets is melted throughout its entire thickness, while each region of the metal layer overlapped by one of the shifted shadow regions remains at least partially unmelted. During resolidification of the melted regions after irradiation by the second radiation beam pulse, the larger grains in the at least partially unmelted regions seed growth of even larger grains in adjoining melted regions. The irradiation, resolidification and re-irradiation of the metal layer may be repeated, as needed, until a desired grain structure is obtained in the metal layer.

Abstract translation: 一种用于通过用第一受激准分子激光脉冲照射金属层来处理衬底上的薄金属层以控制金属层中的晶粒尺寸，晶粒形状和晶界位置和取向的方法和装置，所述第一准分子激光脉冲具有由 面具有阴影区域和子束。 由子束重叠的金属层的每个区域在其整个厚度上熔化，并且金属层与阴影区域重叠的每个区域保持至少部分未熔化。 每个至少部分未熔化的区域邻接相邻的熔融区域。 在通过第一准分子激光脉冲照射之后，允许金属层的熔融区域重新凝固。 在再凝固期间，至少部分未熔化的区域使相邻熔融区域中的晶粒生长成长以产生较大的晶粒。 在通过第一准分子激光脉冲照射完成熔融区域的再凝固后，通过具有偏移强度图案的第二准分子激光脉冲照射金属层，使得阴影区域与具有越来越小的晶粒的金属层的区域重叠。 与其中一个移位的子束重叠的金属层的每个区域在其整个厚度上熔化，而与偏移的阴影区域之一重叠的金属层的每个区域至少部分地未熔化。 在通过第二辐射束脉冲照射之后的熔融区域再凝固期间，至少部分未熔化的区域中较大的晶粒使相邻熔融区域中甚至更大的晶粒生长。 可以根据需要重复金属层的照射，再凝固和再照射，直到在金属层中获得所需的晶粒结构。

公开(公告)号：US07341928B2

公开(公告)日：2008-03-11

申请号：US10544498

申请日：2004-02-18

Applicant: James S. Im

Inventor： James S. Im

IPC: H01L21/36 ,  H01L21/20

CPC classification number: B23K26/0673 ,  B23K26/0622 ,  B23K26/064 ,  B23K26/0648 ,  B23K26/0665 ,  B23K26/067 ,  B23K26/12 ,  B23K26/127 ,  B23K26/128 ,  H01L21/02686 ,  H01L21/2026 ,  Y10S117/904 ,  Y10T428/24802

Abstract: A process and system are provided for processing at least one section of each of a plurality of semiconductor film samples. In these process and system, the irradiation beam source is controlled to emit successive irradiation beam pulses at a predetermined predetermined repetition rate. Using such emitted beam pulses, at least one section of one of the semiconductor film samples is irradiated using a first sequential lateral solidification (“SLS”) technique and/or a first uniform small grained material (“UGS”) techniques to process the such sections) of the first sample. Upon the completion of the processing of this section of the first sample, the beam pulses are redirected to impinge at least one section of a second sample of the semiconductor film samples. Then, using the redirected beam pulses, such sections) of the second sample are irradiated using a second SLS technique and/or a second UGS technique to process the at least one section of the second sample. The first and second techniques can be different from one another or substantially the same.

Abstract translation: 提供了一种用于处理多个半导体薄膜样品中的每一个的至少一个部分的工艺和系统。 在这些处理和系统中，照射束源被控制成以预定的预定重复频率发射连续的照射光束脉冲。 使用这种发射的光束脉冲，使用第一顺序侧向固化（“SLS”）技术和/或第一均匀小粒度材料（“UGS”）技术照射半导体膜样品之一的至少一个部分，以处理这样的 部分）。 在完成第一采样的这一部分的处理之后，光束脉冲被重定向以冲击半导体薄膜样品的第二样品的至少一个部分。 然后，使用第二SLS技术和/或第二UGS技术照射第二样品的重定向光束脉冲，这样的部分）以处理第二样品的至少一个部分。 第一和第二技术可以彼此不同或基本上相同。

公开(公告)号：US07311778B2

公开(公告)日：2007-12-25

申请号：US10944350

申请日：2004-09-17

Applicant: James S. Im ,  Paul Christiaan van der Wilt

Inventor： James S. Im ,  Paul Christiaan van der Wilt

IPC: C30B35/00

CPC classification number: C30B35/00 ,  B23K26/066 ,  C30B13/24 ,  C30B28/08 ,  G03F7/70041 ,  G03F7/70725 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1008

Abstract: A method of processing a polycrystalline film on a substrate includes generating a plurality of laser beam pulses, positioning the film on a support capable of movement in at least one direction, directing the plurality of laser beam pulses through a mask to generate patterned laser beams; each of said beams having a length l′, a width w′ and a spacing between adjacent beams d′, irradiating a region of the film with the patterned beams, said beams having an intensity that is sufficient to melt an irradiated portion of the film to induce crystallization of the irradiated portion of the film, wherein the film region is irradiated n times; and after irradiation of each film portion, translating either the film or the mask, or both, a distance in the x- and y-directions, where the distance of translation in the y-direction is in the range of about 1′/n-δ, where δ is a value selected to form overlapping the beamlets from the one irradiation step to the next, and where the distance of translation in the x-direction is selected such that the film is moved a distance of about λ′ after n irradiations, where λ′=w′+d′.

Abstract translation: 在衬底上处理多晶膜的方法包括产生多个激光束脉冲，将膜定位在能够在至少一个方向上移动的支撑件上，将多个激光束脉冲引导通过掩模以产生图案化的激光束; 每个所述光束具有长度l'，宽度w'和相邻光束d'之间的间隔，用图案化光束照射膜的区域，所述光束具有足以熔化膜的照射部分的强度 以引起膜的照射部分的结晶，其中膜区域被照射n次; 并且在每个胶片部分照射之后，将胶片或掩模或两者都平移在x方向和y方向上的距离，其中在y方向上的平移距离在约1'/ n -delta，其中delta是选择以形成从一个照射步骤到下一个照射步骤的子束重叠的值，并且其中选择x方向上的平移距离使得膜在n之后移动约λ'的距离 辐射，其中λ'= w'+ d'。

公开(公告)号：US07220660B2

公开(公告)日：2007-05-22

申请号：US10939271

申请日：2004-09-13

Applicant: James S. Im ,  Robert S. Sposili ,  Mark A. Crowder

Inventor： James S. Im ,  Robert S. Sposili ,  Mark A. Crowder

IPC: B23K26/00 ,  B23K26/06 ,  H01L21/00 ,  H01L21/20 ,  H01L21/302 ,  H01L21/321

CPC classification number: H01L21/02686 ,  B23K26/06 ,  B23K26/0622 ,  B23K26/066 ,  B23K26/0853 ,  B23K26/3576 ,  B23K2101/40 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/302 ,  H01L21/32115 ,  H01L21/67253 ,  Y10S438/942

Abstract: Systems and methods for reducing a surface roughness of a polycrystalline or single crystal thin film produced by the sequential lateral solidification process are disclosed. In one arrangement, the system includes an excimer laser (110) for generating a plurality of excimer laser pulses of a predetermined fluence, an energy density modulator (120) for controllably modulating the fluence of the excimer laser pulses such that the fluence is below that which is required to completely melt the thin film, a beam homoginizer (144) for homoginizing modulated laser pulses in a predetermined plane, a sample stage (170) for receiving homoginized laser pulses to effect melting of portions of the polycrystalline or single crystal thin film corresponding to the laser pulses, translating means for controllably translating a relative position of the sample stage (170) with respect to the laser pulses, and a computer (110) for coordinating the excimer pulse generation and fluence modulation with the relative positions of the sample stage (170) to thereby process the polycrystalline or single crystal thin film by sequential translation of the sample stage (170) relative to the laser pulses.

Abstract translation: 公开了用于降低由顺序侧向凝固过程产生的多晶或单晶薄膜的表面粗糙度的系统和方法。 在一种布置中，该系统包括用于产生预定注量的多个准分子激光脉冲的准分子激光器（110），用于可控制地调节准分子激光脉冲的能量密度的能量密度调制器（120） 需要使薄膜完全熔化的光束均质化器（144），用于使预定平面中的调制激光脉冲同调化，用于接收均质化的激光脉冲以实现多晶或单晶薄膜的部分熔化的样品台（170） 对应于激光脉冲，用于可控地平移样品台（170）相对于激光脉冲的相对位置的平移装置，以及用于将准​​分子脉冲产生和能量密度调制与样品的相对位置协调的计算机（110） （170），从而通过样品台（1）的顺序平移来处理多晶或单晶薄膜 70）相对于激光脉冲。

公开(公告)号：US07164153B2

公开(公告)日：2007-01-16

申请号：US10521345

申请日：2003-11-04

Applicant: Su-Gyeong Lee ,  Sook-Young Kang ,  Myung-Koo Kang ,  Hyun-Jae Kim ,  James S. Im

Inventor： Su-Gyeong Lee ,  Sook-Young Kang ,  Myung-Koo Kang ,  Hyun-Jae Kim ,  James S. Im

IPC: H01L29/04

CPC classification number: H01L27/1214 ,  H01L27/1255 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/78645

Abstract: A thin film transistor array panel is provided, which includes: a substrate including a plurality of pixel areas; a semiconductor layer formed on the substrate and including a plurality of pairs of first and second semiconductor portions in respective pixel areas; a first insulating layer formed on the semiconductor layer; a gate wire formed on the first insulating layer; a second insulating layer formed on the gate wire; a data wire formed on the second insulating layer; a third insulating layer formed on the data wire; a pixel electrode formed on the third insulating layer and connected to the data wire, wherein width and length of at least one of the first and the second semiconductor portions vary between at least two pixel areas.

Abstract translation: 提供一种薄膜晶体管阵列面板，其包括：包括多个像素区域的基板; 半导体层，形成在所述基板上，并且在各像素区域中包括多对第一和第二半导体部分; 形成在所述半导体层上的第一绝缘层; 形成在所述第一绝缘层上的栅极线; 形成在栅极线上的第二绝缘层; 形成在所述第二绝缘层上的数据线; 形成在数据线上的第三绝缘层; 形成在第三绝缘层上并连接到数据线的像素电极，其中第一和第二半导体部分中的至少一个的宽度和长度在至少两个像素区域之间变化。

公开(公告)号：US06573531B1

公开(公告)日：2003-06-03

申请号：US09390537

申请日：1999-09-03

Applicant: James S. Im ,  Robert S. Sposili ,  Mark A. Crowder

Inventor： James S. Im ,  Robert S. Sposili ,  Mark A. Crowder

IPC: H01L2904

CPC classification number: H01L21/02686 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/2026

Abstract: System and methods for processing an amorphous silicon thin film sample into a single or polycrystalline silicon thin film are disclosed. The system includes an excimer laser for generating a plurality of excimer laser pulses of a predetermined fluence, an energy density modulator for controllably modulating fluence of the excimer laser pulses, a beam homoginizer for homoginizing modulated laser pulses in a predetermined plane, a mask for masking portions of the homoginized modulated laser pulses into patterned beamlets, a sample stage for receivingthe patterned beamlets to effect melting of portions of any amorphous silicon thin film sample placed thereon corresponding to the beamlets, translating means for controllably translating a relative position of the sample stage with respect to a position of the mask and a computer for controlling the controllable fluence modulation of the excimer laser pulses and the controllable relative positions of the sample stage and mask, and for coordinating excimer pulse generation and fluence modulation with the relative positions of the sample stage and mask, to thereby process amorphous silicon thin film sample into a single or polycrystalline silicon thin film by sequential translation of the sample stage relative to the mask and irradiation of the sample by patterned beamlets of varying fluence at corresponding sequential locations thereon.

Abstract translation: 公开了将非晶硅薄膜样品加工成单个或多晶硅薄膜的系统和方法。 该系统包括用于产生预定能量密度的多个准分子激光脉冲的准分子激光器，用于可控地调制准分子激光脉冲的注量的能量密度调制器，用于在预定平面中均匀化调制的激光脉冲的光束均质器，用于掩蔽的掩模 将均质化的调制的激光脉冲的部分转换成图案化的子束，样品台，用于接收图案化的子束以实现对应于子束放置在其上的任何非晶硅薄膜样品的部分的熔化，用于可控地将样品台的相对位置与 相对于掩模的位置和用于控制准分子激光脉冲的可控注量调制和样品台和掩模的可控相对位置的计算机，并且用于将准分子脉冲产生和能量密度调制与样品台的相对位置协调 和面具，从而处理amorp 通过对样品台相对于掩模进行顺序平移，并通过在其上相应的顺序位置上具有变化的注量的图案化的子束照射样品，将壳硅薄膜样品转变为单个或多晶硅薄膜。

公开(公告)号：US06563077B2

公开(公告)日：2003-05-13

申请号：US09823547

申请日：2001-03-30

Applicant: James S. Im

Inventor： James S. Im

IPC: B23K26067

CPC classification number: H01L21/02691 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/2026

Abstract: A method and system for processing an amorphous silicon thin film sample to produce a large grained, grain boundary-controlled silicon thin film. The film sample includes a first edge and a second edge. In particular, using this method and system, an excimer laser is used to provide a pulsed laser beam, and the pulse laser beam is masked to generate patterned beamlets, each of the patterned beamlets having an intensity which is sufficient to melt the film sample. The film sample is continuously scanned at a first constant predetermined speed along a first path between the first edge and the second edge with the patterned beamlets. In addition, the film sample is continuously scanned at a second constant predetermined speed along a second path between the first edge and the second edge with the patterned beamlets.

Abstract translation: 一种用于处理非晶硅薄膜样品以产生大晶粒，晶界控制的硅薄膜的方法和系统。 胶片样品包括第一边缘和第二边缘。 特别地，使用这种方法和系统，使用准分子激光器来提供脉冲激光束，并且脉冲激光束被掩蔽以产生图案化的子束，每个图案化的子束具有足以熔化膜样品的强度。 利用图案化的子束，以第一边缘和第二边缘之间的第一路径以第一恒定的预定速度连续地扫描胶片样品。 此外，利用图案化的子束，沿着第一边缘和第二边缘之间的第二路径以第二恒定的预定速度连续地扫描薄膜样本。

公开(公告)号：US06368945B1

公开(公告)日：2002-04-09

申请号：US09526585

申请日：2000-03-16

Applicant: James S. Im

Inventor： James S. Im

IPC: H01L2120

CPC classification number: H01L21/02691 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/2026

Abstract: A method and system for processing an amorphous silicon thin film sample to produce a large grained, grain boundary-controlled silicon thin film. The film sample includes a first edge and a second edge. In particular, using this method and system, an excimer laser is used to provide a pulsed laser beam, and the pulse laser beam is masked to generate patterned beamlets, each of the patterned beamlets having an intensity which is sufficient to melt the film sample. The film sample is continuously scanned at a first constant predetermined speed along a first path between the first edge and the second edge with the patterned beamlets. In addition, the film sample is continuously scanned at a second constant predetermined speed along a second path between the first edge and the second edge with the patterned beamlets.

Abstract translation: 一种用于处理非晶硅薄膜样品以产生大晶粒，晶界控制的硅薄膜的方法和系统。 胶片样品包括第一边缘和第二边缘。 特别地，使用这种方法和系统，使用准分子激光器来提供脉冲激光束，并且脉冲激光束被掩蔽以产生图案化的子束，每个图案化的子束具有足以熔化膜样品的强度。 利用图案化的子束，以第一边缘和第二边缘之间的第一路径以第一恒定的预定速度连续地扫描胶片样品。 此外，利用图案化的子束，沿着第一边缘和第二边缘之间的第二路径以第二恒定的预定速度连续地扫描薄膜样本。

公开(公告)号：US08859436B2

公开(公告)日：2014-10-14

申请号：US12402208

申请日：2009-03-11

Applicant: James S. Im ,  Robert S. Sposili ,  Mark A. Crowder

Inventor： James S. Im ,  Robert S. Sposili ,  Mark A. Crowder

IPC: H01L21/02 ,  H01L21/20 ,  H01L27/12 ,  G03F7/20 ,  B23K26/06 ,  H01L29/04

CPC classification number: B23K26/0622 ,  B23K26/0626 ,  B23K26/066 ,  G03F7/70041 ,  G03F7/70725 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02686 ,  H01L21/02691 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04

Abstract: Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed. In one preferred arrangement, a method includes the steps of generating a sequence of excimer laser pulses, controllably modulating each excimer laser pulse in the sequence to a predetermined fluence, masking portions of each fluence controlled laser pulse in the sequence with a two dimensional pattern of slits to generate a sequence of fluence controlled pulses of line patterned beamlets, irradiating an amorphous silicon thin film sample with the sequence of fluence controlled slit patterned beamlets to effect melting of portions thereof, and controllably sequentially translating a relative position of the sample with respect to each of the fluence controlled pulse of slit patterned beamlets to thereby process the amorphous silicon thin film sample into a single or polycrystalline silicon thin film.

Abstract translation: 公开了将非晶硅薄膜样品加工成多晶硅薄膜的方法。 在一个优选的布置中，一种方法包括以下步骤：产生准分子激光脉冲序列，可控制地将序列中的每个受激准分子激光脉冲调制成预定的注量，以序列中的每个注量受控激光脉冲的部分掩蔽， 缝隙以产生线图案化子束的注量控制脉冲序列，用注量控制的狭缝图案化子束的顺序照射非晶硅薄膜样品以实现其部分的熔化，并且可控地顺序地将样品相对于 每个切口图案化的子束的注量控制脉冲，从而将非晶硅薄膜样品处理成单个或多晶硅薄膜。