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公开(公告)号：US20180067350A1
公开(公告)日：2018-03-08
申请号：US15806478
申请日：2017-11-08
Applicant: Japan Display Inc.
Inventor： Takenori HIROTA , Yasuhiro KANAYA , Hidehiro SONODA , Toshiki KANEKO
IPC: G02F1/1339 , G02F1/1333
CPC classification number: G02F1/1339 , G02F1/133345 , G02F2001/133388
Abstract: A reliability of seal portion of a liquid crystal display device can be improved by the following structure. A liquid crystal display device includes: a TFT substrate which includes a display region and a terminal part, and has an inorganic insulating film formed on an organic passivation film and an alignment film formed over the inorganic insulating film; a counter substrate, the TFT substrate and the counter substrate bonded together by a sealing material formed at a seal part surrounding the display region; and a liquid crystal sealed inside. At the seal part, a transparent conductive oxide film is formed between the inorganic insulating film and the alignment film. The transparent conductive oxide film exists inside an edge of the TFT substrate and hence, the edge of the TFT substrate is free of the transparent conductive oxide film.
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公开(公告)号：US20160147110A1
公开(公告)日：2016-05-26
申请号：US15002453
申请日：2016-01-21
Inventor： Hideo TANABE , Masaru TAKABATAKE , Toshiki KANEKO , Atsushi HASEGAWA , Hiroko SEHATA
IPC: G02F1/1333
CPC classification number: G02F1/133345 , G02F1/133305 , G02F1/133504 , G02F1/133555 , G02F1/134363 , G02F1/136213 , G02F1/136227 , G02F1/1368 , G02F2001/13685 , H01L27/124 , H01L27/1248 , H01L29/78675
Abstract: A LCD device having a large pixel holding capacitance includes opposedly facing first and second substrates, and liquid crystal between them. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode connected to the video signal line and a second electrode connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film above the first silicon nitride film, a capacitance electrode above the organic insulation film, and a second silicon nitride film above the capacitance electrode and below the pixel electrode. A contact hole etched in both the first and second silicon nitride films connects the second electrode and the pixel electrode to each other. A holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.
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公开(公告)号：US20150370102A1
公开(公告)日：2015-12-24
申请号：US14840604
申请日：2015-08-31
Applicant: Japan Display Inc.
Inventor： Noboru KUNIMATSU , Masaki MATSUMORI , Hidehiro SONODA , Yasushi TOMIOKA , Toshiki KANEKO
IPC: G02F1/1337 , G02F1/1339 , G02F1/1333 , G02F1/1368 , G02F1/1362
CPC classification number: G02F1/1337 , G02F1/1333 , G02F1/133345 , G02F1/133723 , G02F1/13378 , G02F1/133788 , G02F1/1339 , G02F1/13394 , G02F1/136286 , G02F1/1368
Abstract: The present invention prevents the shaving of an alignment film caused by a columnar spacer in a liquid crystal display device of an IPS method using photo-alignment. A plinth higher than a pixel electrode is formed at a part where a columnar spacer formed over a counter substrate touches a TFT substrate. When an alignment film of a double-layered structure is applied over the pixel electrode and the plinth, the thickness of the alignment film over the plinth reduces by a leveling effect. When photo-alignment is applied in the state, a photodegraded upper alignment film over the plinth disappears and a lower alignment film having a high mechanical strength remains. As a result, it is possible to prevent the shaving of the alignment film.
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公开(公告)号：US20140132902A1
公开(公告)日：2014-05-15
申请号：US14156957
申请日：2014-01-16
Inventor： Hideo TANABE , Masaru TAKABATAKE , Toshiki KANEKO , Atsushi HASEGAWA , Hiroko SEHATA
IPC: G02F1/1333
CPC classification number: G02F1/133345 , G02F1/133305 , G02F1/133504 , G02F1/133555 , G02F1/134363 , G02F1/136213 , G02F1/136227 , G02F1/1368 , G02F2001/13685 , H01L27/124 , H01L27/1248 , H01L29/78675
Abstract: A LCD device having a large pixel holding capacitance includes opposedly facing first and second substrates, and liquid crystal between them. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode connected to the video signal line and a second electrode connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film above the first silicon nitride film, a capacitance electrode above the organic insulation film, and a second silicon nitride film above the capacitance electrode and below the pixel electrode. A contact hole etched in both the first and second silicon nitride films connects the second electrode and the pixel electrode to each other. A holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.
Abstract translation: 具有大像素保持电容的LCD装置包括相对的第一和第二基板以及它们之间的液晶。 第一基板包括视频信号线，像素电极，具有连接到视频信号线的第一电极的薄膜晶体管和连接到像素电极的第二电极，形成在第二电极上方的第一氮化硅膜，有机物 第一氮化硅膜上方的绝缘膜，有机绝缘膜上方的电容电极，以及电容电极上方和像素电极下方的第二氮化硅膜。 在第一和第二氮化硅膜中蚀刻的接触孔将第二电极和像素电极彼此连接。 保持电容由像素电极，第二氮化硅膜和电容电极形成。
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公开(公告)号：US20130334524A1
公开(公告)日：2013-12-19
申请号：US13915671
申请日：2013-06-12
Applicant: Japan Display Inc.
Inventor： Hidekazu MIYAKE , Norihiro UEMURA , Takeshi NODA , Isao SUZUMURA , Toshiki KANEKO
IPC: H01L27/12
CPC classification number: H01L27/1244 , H01L27/1225 , H01L27/1288 , H01L27/3244
Abstract: The present invention provides a display device having: gate electrodes formed on a transparent substrate; a gate insulating film for covering the gate electrodes; an oxide semiconductor formed on the gate insulating film; drain electrodes and source electrodes formed at a distance from each other with channel regions of the oxide semiconductor in between; an interlayer capacitor film for covering the drain electrodes and source electrodes; common electrodes formed on top of the interlayer capacitor film; and pixel electrodes formed so as to face the common electrodes, and wherein an etching stopper layer for covering the channel regions is formed between the oxide semiconductor and the drain electrodes and source electrodes, the drain electrodes are a multilayer film where a transparent conductive film and a metal film are layered on top of each other, and the drain electrodes and source electrodes make direct contact with the oxide semiconductor.
Abstract translation: 本发明提供一种显示装置，具有：形成在透明基板上的栅电极; 用于覆盖栅电极的栅极绝缘膜; 形成在栅极绝缘膜上的氧化物半导体; 漏电极和源极之间形成有一定距离的氧化物半导体的沟道区; 用于覆盖漏电极和源电极的层间电容膜; 公共电极形成在层间电容器膜的顶部; 以及形成为与公共电极相对的像素电极，并且其中在氧化物半导体与漏电极和源电极之间形成用于覆盖沟道区的蚀刻停止层，漏电极是多层膜，其中透明导电膜和 金属膜层叠在一起，漏电极和源电极与氧化物半导体直接接触。
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Patent Agency Ranking
公开(公告)号：US20230137206A1
公开(公告)日：2023-05-04
申请号：US18148072
申请日：2022-12-29
Applicant: Japan Display Inc.
Inventor： Akio TAKIMOTO , Toshiki KANEKO , Takuo KAITOH , Kazuhiro NISHIYAMA , Hiroyuki KIMURA
IPC: G02F1/137 , F21V8/00 , G02F1/1335 , G09G3/36 , H04N23/57
Abstract: According to one embodiment, an electronic apparatus includes a camera, a first polarizer, a second polarizer, a liquid crystal panel, and a controller controlling the liquid crystal panel. The liquid crystal panel includes a first region and a second region. The controller controls a first opening mode of transmitting light through the first region and the second region, and a second opening mode of making a quantity of light transmitted through the first region smaller than a quantity of light transmitted through the second region.
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公开(公告)号：US20230017598A1
公开(公告)日：2023-01-19
申请号：US17862419
申请日：2022-07-12
Applicant: Japan Display Inc.
Inventor： Toshiki KANEKO , Akihiro HANADA
IPC: H01L29/786 , H01L29/417
Abstract: According to one embodiment, a semiconductor device includes a gate electrode, a first insulating layer covering the gate electrode, an oxide semiconductor provided on the first insulating layer immediately above the gate electrode, a source electrode in contact with the oxide semiconductor, and a drain electrode in contact with the oxide semiconductor. Each of the source electrode and the drain electrode includes an oxide conductive layer in contact with the oxide semiconductor, a first metal layer stacked on the oxide conductive layer, a second metal layer formed of a different material from the first metal layer and stacked on the first metal layer, and a third metal layer formed of a same material as the first metal layer and stacked on the second metal layer.
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公开(公告)号：US20220326577A1
公开(公告)日：2022-10-13
申请号：US17841712
申请日：2022-06-16
Inventor： Shoichi UCHINO , Noboru KUNIMATSU , Hidehiro SONODA , Chikae MATSUI , Yuko MATSUMOTO , Tomio YAGUCHI , Toshiki KANEKO , Jun TANAKA
IPC: G02F1/1337 , G03F7/30 , G03F7/36
Abstract: Disclosed is a manufacturing method of a liquid crystal display device which is a manufacturing method of a liquid crystal display device including a liquid crystal alignment film to which an alignment regulating force is imparted by a photo-alignment treatment, including: a film forming step of forming a film containing a polymer whose main chain is cleaved by irradiation with light; a photo-alignment step of imparting an alignment regulating force to the film formed in the film forming step by irradiation of the film with light in an atmosphere of a temperature lower than 100° C.; and a removing step of removing a low-molecular weight component generated by cleaving the main chain of the polymer through the light irradiation after the light irradiation. Also disclosed is a liquid crystal display device manufactured by the manufacturing method.
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公开(公告)号：US20220140117A1
公开(公告)日：2022-05-05
申请号：US17511633
申请日：2021-10-27
Applicant: Japan Display Inc.
Inventor： Akihiro HANADA , Takuo KAITOH , Ryo ONODERA , Takashi OKADA , Tomoyuki ITO , Toshiki KANEKO
IPC: H01L29/66 , H01L29/786 , H01L21/385
Abstract: According to one embodiment, a method for manufacturing a semiconductor device, includes forming a first insulating film which covers a gate electrode, forming an island-shaped oxide semiconductor in contact with the first insulating film, forming a second insulating film which covers the oxide semiconductor, forming a source electrode in contact with the oxide semiconductor, forming a drain electrode in contact with the oxide semiconductor, forming a third insulating film which covers the source electrode and the drain electrode and forming a channel region between the source electrode and the drain electrode by supplying oxygen from the third insulating film to the oxide semiconductor via the second insulating film.
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公开(公告)号：US20210141266A1
公开(公告)日：2021-05-13
申请号：US17153336
申请日：2021-01-20
Applicant: Japan Display Inc.
Inventor： Akio TAKIMOTO , Toshiki KANEKO , Takuo KAITOH , Kazuhiro NISHIYAMA , Hiroyuki KIMURA
IPC: G02F1/1333 , H04N5/225 , G02F1/29 , F21V8/00 , G02F1/1335
Abstract: According to one embodiment, an electronic equipment includes a liquid crystal panel including a display portion, a polarizer superposed on the display portion, and a detection element superposed on the liquid crystal panel and the polarizer to detect infrared rays through the liquid crystal panel and the polarizer.
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