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104 条记录 (耗时 0.037 秒)

    Optical Resonator Tuning Using Piezoelectric Actuation
    31.
    发明申请
    Optical Resonator Tuning Using Piezoelectric Actuation 有权
    使用压电驱动的光谐振器调谐

    公开(公告)号：US20090245714A1

    公开(公告)日：2009-10-01

    申请号：US12260016

    申请日：2008-10-28

    申请人： Alexandre Bratkovski ,  Sagi Mathai ,  Duncan Stewart

    发明人： Alexandre Bratkovski ,  Sagi Mathai ,  Duncan Stewart

    IPC分类号： G02F1/01 ,  G02B6/26

    CPC分类号： G02B6/12007

    摘要： An optical resonator configured to be tuned using piezoelectric actuation, includes a core, the core being configured to transmit light; a piezoelectric layer; a first electrode and a second electrode. The piezoelectric layer is interposed between the first electrode and the second electrode. A voltage difference across the first and second electrodes alters a geometric dimension of the piezoelectric layer such that physical force is applied to the core and a resonant optical frequency of the resonator is changed. A method of utilizing mechanical stress to tune an optical resonator includes applying physical force to the resonator by subjecting a piezoelectric material to an electric field, the physical force changing a resonant frequency of the resonator.

    摘要翻译： 构造成使用压电致动调谐的光学谐振器包括芯，所述芯被配置为透射光; 压电层; 第一电极和第二电极。 压电层介于第一电极和第二电极之间。 第一和第二电极两端的电压差改变了压电层的几何尺寸，使得物理力被施加到磁芯上，并且谐振器的谐振光频率改变。 利用机械应力来调谐光学谐振器的方法包括通过使压电材料经受电场来施加物理力，所述物理力改变谐振器的谐振频率。

    Ridge Waveguide
    32.
    发明申请
    Ridge Waveguide 有权
    脊波导

    公开(公告)号：US20090180748A1

    公开(公告)日：2009-07-16

    申请号：US12253196

    申请日：2008-10-16

    申请人： Duncan Stewart ,  Marco Fiorentino ,  Nathaniel Quitoriano ,  Charles Santori

    发明人： Duncan Stewart ,  Marco Fiorentino ,  Nathaniel Quitoriano ,  Charles Santori

    IPC分类号： G02B6/10

    CPC分类号： G02B6/136 ,  G02B2006/12097

    摘要： A ridge waveguide with decreased optical losses from surface scattering includes a ridge waveguide with etched surfaces and an optical layer deposited on the ridge waveguide that substantially covers the etched surfaces. A method of reducing optical energy losses from scattering at etched surfaces of a ridge waveguide includes depositing a layer of optical material over the etched surfaces, the layer of optical material filling surface irregularities in the etched surfaces.

    摘要翻译： 具有从表面散射减少的光损失的脊波导包括具有蚀刻表面的脊波导和沉积在脊波导上的基本上覆盖蚀刻表面的光学层。 降低脊波导蚀刻表面散射光能损失的方法包括在蚀刻表面上沉积光学材料层，该光学材料层填充蚀刻表面中的表面凹凸。

    Photonic crystal Raman sensors and methods including the same
    33.
    发明授权
    Photonic crystal Raman sensors and methods including the same 有权
    光子晶体拉曼传感器和方法包括相同

    公开(公告)号：US07466407B2

    公开(公告)日：2008-12-16

    申请号：US11413877

    申请日：2006-04-27

    申请人： Sean M. Spillane ,  Raymond G. Beausoleil ,  Zhiyong Li ,  Duncan Stewart

    发明人： Sean M. Spillane ,  Raymond G. Beausoleil ,  Zhiyong Li ,  Duncan Stewart

    IPC分类号： G01J3/44

    CPC分类号： G01J3/44 ,  G01N21/658

    摘要： Raman-enhancing structures include a photonic crystal having a resonant cavity and at least one waveguide coupled to the resonant cavity. A nanostructure comprising a Raman-enhancing material is disposed proximate the resonant cavity of the photonic crystal. Raman-enhancing structures include a microdisk resonator, at least one waveguide coupled to the microdisk resonator, and a nanostructure comprising a Raman-enhancing material disposed proximate the microdisk resonator. Methods for performing Raman spectroscopy include generating radiation, guiding the radiation through a waveguide to a resonant cavity in a photonic crystal or a microdisk resonator, resonating the radiation in the resonant cavity or microdisk resonator, providing an analyte proximate the resonant cavity or microdisk resonator, subjecting the analyte to the resonating radiation, and detecting Raman scattered radiation.

    摘要翻译： 拉曼增强结构包括具有谐振腔和耦合到谐振腔的至少一个波导的光子晶体。 包含拉曼增强材料的纳米结构设置在光子晶体的谐振腔附近。 拉曼增强结构包括微盘谐振器，耦合到微盘谐振器的至少一个波导和包括靠近微盘谐振器设置的拉曼增强材料的纳米结构。 用于执行拉曼光谱的方法包括产生辐射，将辐射通过波导引导到光子晶体或微盘谐振器中的谐振腔，谐振谐振腔或微盘谐振器中的辐射，提供靠近谐振腔或微盘谐振器的分析物， 对分析物进行共振辐射，并检测拉曼散射辐射。

    Nanowire interconnection and nano-scale device applications
    36.
    发明申请
    Nanowire interconnection and nano-scale device applications 失效
    纳米线互连和纳米级器件应用

    公开(公告)号：US20060097389A1

    公开(公告)日：2006-05-11

    申请号：US10982051

    申请日：2004-11-05

    申请人： M. Islam ,  Philip Kuekes ,  Shih-Yuan Wang ,  Duncan Stewart ,  Shashank Sharma

    发明人： M. Islam ,  Philip Kuekes ,  Shih-Yuan Wang ,  Duncan Stewart ,  Shashank Sharma

    IPC分类号： H01L23/48

    CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y20/00 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01S5/0261 ,  H01S5/041 ,  H01S5/183 ,  H01S5/341 ,  H01S5/3412 ,  H01S5/3428 ,  Y10S977/762 ,  Y10S977/763 ,  Y10S977/764 ,  Y10S977/938

    摘要： A nano-colonnade structure-and methods of fabrication and interconnection thereof utilize a nanowire column grown nearly vertically from a (111) horizontal surface of a semiconductor layer to another horizontal surface of another layer to connect the layers. The nano-colonnade structure includes a first layer having the (111) horizontal surface; a second layer having the other horizontal surface; an insulator support between the first layer and the second layer that separates the first layer from the second layer. A portion of the second layer overhangs the insulator support, such that the horizontal surface of the overhanging portion is spaced from and faces the (111) horizontal surface of the first layer. The structure further includes a nanowire column extending nearly vertically from the (111) horizontal surface to the facing horizontal surface, such that the nanowire column connects the first layer to the second layer.

    摘要翻译： 纳米柱廊结构及其制造和互连方法利用从半导体层的（111）水平表面几乎垂直地生长到另一层的另一水平表面的纳米线列，以连接这些层。 纳米柱廊结构包括具有（111）水平表面的第一层; 具有另一水平表面的第二层; 第一层和第二层之间的绝缘体支撑，其将第一层与第二层分离。 第二层的一部分突出于绝缘体支撑件上，使得伸出部分的水平表面与第一层的（111）水平表面间隔开并面对第一层的（111）水平表面。 该结构还包括从（111）水平表面几乎垂直延伸到相对的水平表面的纳米线列，使得纳米线列将第一层连接到第二层。

    Custom electrodes for molecular memory and logic devices
    37.
    发明申请
    Custom electrodes for molecular memory and logic devices 审中-公开
    用于分子存储器和逻辑器件的定制电极

    公开(公告)号：US20050164412A1

    公开(公告)日：2005-07-28

    申请号：US10995608

    申请日：2004-11-22

    申请人： Patricia Beck ,  Douglas Ohlberg ,  Duncan Stewart ,  Zhiyong Li

    发明人： Patricia Beck ,  Douglas Ohlberg ,  Duncan Stewart ,  Zhiyong Li

    IPC分类号： H01L21/28 ,  G11C13/02 ,  H01L21/285 ,  H01L27/28 ,  H01L29/06 ,  H01L21/00

    CPC分类号： H01L27/28 ,  G11C13/02 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for tailoring at least portions of an exposed non-planar layered surface of a conductive layer formed on a substrate having a first surface roughness to provide the exposed surface with a second surface roughness. The method includes: forming the conductive layer on the substrate; and tailoring at least portions of the exposed surface of the conductive layer in a plasma to at least smooth the exposed surface of the conductive layer, whereby the second surface roughness is essentially the same as the first surface roughness.

    摘要翻译： 一种用于调整形成在具有第一表面粗糙度的基底上的导电层的暴露的非平面层状表面的至少一部分以提供具有第二表面粗糙度的暴露表面的方法。 该方法包括：在基板上形成导电层; 以及在等离子体中定制导电层的暴露表面的至少部分，以至少平滑导电层的暴露表面，由此第二表面粗糙度基本上与第一表面粗糙度相同。

    Custom electrodes for molecular memory and logic devices
    39.
    发明申请
    Custom electrodes for molecular memory and logic devices 审中-公开
    用于分子存储器和逻辑器件的定制电极

    公开(公告)号：US20050026427A1

    公开(公告)日：2005-02-03

    申请号：US10930062

    申请日：2004-08-30

    申请人： Patricia Beck ,  Douglas Ohlberg ,  Duncan Stewart ,  Zhiyong Li

    发明人： Patricia Beck ,  Douglas Ohlberg ,  Duncan Stewart ,  Zhiyong Li

    IPC分类号： H01L21/28 ,  G11C13/02 ,  H01L21/285 ,  H01L27/28 ,  H01L29/06 ,  H01L21/00

    CPC分类号： H01L27/28 ,  G11C13/02 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method is provided for fabricating molecular electronic devices comprising at least a bottom electrode and a molecular switch film on the bottom electrode. The method includes forming the bottom electrode by a process including: cleaning portions of the substrate where the bottom electrode is to be deposited; pre-sputtering the portions; depositing a conductive layer on at least the portions; and cleaning the top surface of the conductive layer. Advantageously, the conductive electrode properties include: low or controlled oxide formation (or possibly passivated), high melting point, high bulk modulus, and low diffusion. Smooth deposited film surfaces are compatible with Langmuir-Blodgett molecular film deposition. Tailored surfaces are further useful for SAM deposition. The metallic nature gives high conductivity connection to molecules. Barrier layers may be added to the device stack, i.e., Al2O3 over the conductive layer.

    摘要翻译： 提供了一种用于制造分子电子器件的方法，该分子电子器件至少包括底部电极和底部电极上的分子开关膜。 该方法包括通过以下工艺形成底部电极，该方法包括：清洗要沉积底部电极的衬底的部分; 预溅射部分; 在至少部分上沉积导电层; 并清洁导电层的顶表面。 有利地，导电电极的性质包括：低或受控的氧化物形成（或可能钝化），高熔点，高体积弹性模量和低扩散。 光滑的沉积膜表面与Langmuir-Blodgett分子膜沉积相容。 定制的表面对于SAM沉积是更有用的。 金属性质使分子具有高导电性。 阻挡层可以被添加到器件堆叠，即在导电层上的Al 2 O 3。