摘要:
There are provided a semiconductor device and a method for manufacturing the same. The semiconductor device according to the present invention includes a base substrate; a semiconductor layer that includes a receiving groove and a protrusion part formed on the base substrate, a first carrier injection layer and at least two insulating layers formed to traverse the first carrier injection layer formed in the semiconductor layer, and a second carrier injection layer spaced apart from the first carrier injection layer formed on the protrusion part; a source electrode and a drain electrode that are disposed to be spaced apart from each other on the semiconductor layer; and a gate electrode that is insulated from the source electrode and the drain electrode and has a recess part recessed into the receiving groove, wherein the lowest end portion of the receiving groove contacts the uppermost layer of the first carrier injection layer and the insulating pattern disposed at the innermost side of the semiconductor layer among the insulating patterns traverses the entire layer forming the first carrier injection layer and is disposed at the outer side of both side end portions in the thickness direction of the receiving groove.
摘要:
The present invention provides a semiconductor component. The semiconductor component in accordance with the present invention includes a lower layer including a low resistance layer and a high resistance layer with higher resistivity than the low resistance layer while surrounding a lateral surface of the low resistance layer; a source electrode disposed on a front surface of the high resistance layer; a gate structure disposed on a front surface of the low resistance layer; a drain structure disposed on a rear surface of the low resistance layer; and a base substrate surrounding the drain structure on a rear surface of the high resistance layer.
摘要:
The present invention relates to a dish washing machine, and more particularly to a dish washing machine having a structure in which a bottom surface of the dish washing machine is not wet with water. The dish washing machine includes a washing chamber (150) for washing dishes, a fan (90) for discharging air from the washing chamber (150), a housing for a space to install the fan (90), an exhaust duct (92) for guiding the air from the housing (94) to an outside of the dish washing machine, and a passage for draining water to an outside of the housing (94) whenever the water is present in the housing (94).
摘要:
There is provided an air inlet structure of a laundry dryer. In the air inlet structure, a base defines an air inlet, a front cabinet is disposed in front of the base and defines a suction hole to pass ambient air into the base, a cooling fan is stably disposed in the base to suck the ambient air, a blower tube forms a flow passage for the ambient air, a blower cover is fixed to the base to connect the blower tube and the cooling fan, and an air guide is disposed between the base and the blower cover, the air guide having a shroud at a center portion.
摘要:
There is provided an air inlet structure of a laundry dryer. In the air inlet structure, a base defines an air inlet, a front cabinet is disposed in front of the base and defines a suction hole to pass ambient air into the base, a cooling fan is stably disposed in the base to suck the ambient air, a blower tube forms a flow passage for the ambient air, a blower cover is fixed to the base to connect the blower tube and the cooling fan, and an air guide is disposed between the base and the blower cover, the air guide having a shroud at a center portion.
摘要:
A clothes dryer and a method for controlling its operation are disclosed, in which the clothes dryer includes a second motor being separately driven from a drum or a circulation fan to control a cooling fan for cooling a condenser. As for the second motor, a variable speed motor is used and amount of heating of a heater of the clothes dryer is variable. In the method for controlling an operation of a clothes dryer, the cooling fan is operated when a predetermined period of time passes after the cooling fan being stopped during an initial operation, or the cooling fan is operated at a regular speed when a temperature of air circulating reaches a predetermined degree after the cooling fan being operated at a low speed during the initial operation of the clothes dryer. Also, the speed of the cooling fan is varied according to amount of heating of the heater.
摘要:
A process for the preparation of aromatic polyamide pulp having both excellent physical properties and a high degree of polymerization by continuous polymerization and orientation by using of mixed solutions. The solutions are prepared by reacting diamine with aromatic diacid dichloride in an amide and/or urea-based polymerization solvent containing inorganic salts, or a mixture of inorganic salts and a Lewis acid compound. The process can be practiced by polymerization-orientation apparatus located on the continuous transferable polymerization-orientation means comprised of a belt and one or more stirring bars.
摘要:
Provided are an apparatus and method for performing a complex number operation using a Single Instruction Multiple Data (SIMD) architecture. A SIMD operation apparatus may perform, in parallel, a real part operation and an imaginary part operation of a plurality of complex numbers. The real part operation and the imaginary part operation may be performed sequentially, or in parallel.
摘要:
The present invention relates to a nitride semiconductor device and a manufacturing method thereof. According to one aspect of the present invention, a nitride semiconductor device including: a nitride semiconductor layer having a 2DEG channel; a source electrode in ohmic contact with the nitride semiconductor layer; a drain electrode in ohmic contact with the nitride semiconductor layer; a plurality of p-type nitride semiconductor segments formed on the nitride semiconductor layer and each formed lengthways from a first sidewall thereof, which is spaced apart from the source electrode, to a drain side; and a gate electrode formed to be close to the source electrode and in contact with the nitride semiconductor layer between the plurality of p-type semiconductor segments and portions of the p-type semiconductor segments extending in the direction of a source-side sidewall of the gate electrode aligned with the first sidewalls of the p-type nitride semiconductor segments is provided.
摘要:
A concrete girder includes a pair of ultra high performance concrete (UHPC) side form members, each having a lower flange and a web perpendicular thereto, extending in the longitudinal direction and being prepared with UHPC by using a precast, the pair of UHPC side form members being disposed in parallel so that lateral side surfaces of the lower flanges are successively positioned; and concrete placed in a space between the pair of UHPC side form members so that the placed concrete is integrated with the pair of UHPC side form members to form both traverse side surfaces thereof and the lower flange forms a lower flange thereof.