公开(公告)号：US06186153B1

公开(公告)日：2001-02-13

申请号：US09040423

申请日：1998-03-18

申请人： Hiroyuki Kitsunai ,  Nobuo Tsumaki ,  Shigeru Kakuta ,  Kazuo Nojiri ,  Kazue Takahashi

发明人： Hiroyuki Kitsunai ,  Nobuo Tsumaki ,  Shigeru Kakuta ,  Kazuo Nojiri ,  Kazue Takahashi

IPC分类号： C25F700

CPC分类号： H01L21/02046 ,  C23C16/4405 ,  H01L21/30604 ,  Y10S438/905

摘要： Providing a dry cleaning method capable of removing deposition films which adhere to the inner walls of a semiconductor manufacturing apparatus-that is, removing dust production sources therefrom. To this end, the dry cleaning process is supplemented by a step of removing either ion sputtered matter or products of the internal member materials of the apparatus or chemical compounds of such apparatus internal member materials and of an etching gas, in addition to a step of removing etching reaction products. It thus becomes possible to eliminate dust generation due to pealing off of deposition films with an increase in the number of wafers being processed, which in turn increases the manufacturing yield and working efficiency of the manufacturing apparatus.

摘要翻译： 提供能够除去附着在半导体制造装置的内壁上的沉积膜的干式清洗方法，即从其除去灰尘生成源。 为此，通过除去离子溅射物质或该装置内部构件材料的内部构件材料的产物或这种设备内部构件材料的化学化合物和蚀刻气体的步骤来补充干法，除了步骤 去除蚀刻反应产物。 因此，随着处理晶片数量的增加，可以消除由于沉积膜剥落引起的灰尘的产生，这又提高了制造装置的制造成品率和工作效率。

公开(公告)号：US20070162172A1

公开(公告)日：2007-07-12

申请号：US11645680

申请日：2006-12-27

申请人： Junichi Tanaka ,  Hiroyuki Kitsunai ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Kazue Takahashi

发明人： Junichi Tanaka ,  Hiroyuki Kitsunai ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Kazue Takahashi

IPC分类号： G06F19/00

CPC分类号： G05B21/02 ,  G05B19/41875 ,  G05B23/0221 ,  G05B2219/32053 ,  G05B2219/32182 ,  Y02P90/22

摘要： A plasma processing method for processing a sample by using plasma on a lot unit basis, including: detecting plural kinds of information as monitor data relating to a processing state of the sample, using a plurality of sensors; selecting a detection time range of the monitor data thus detected; converting the monitor data within the selected detection time range into a converted signal; predicting a pattern shape of the sample based on the converted signal; calculating a correction quantity of a processing parameter, for decreasing a deviation between the predicted pattern shape and a standard value; and converting the correction quantity of a processing parameter obtained by the calculating operation when a kind of a next sample of a next lot is different from the sample, thereby to use a converted correction quantity of the processing parameter for a processing of the next sample.

摘要翻译： 一种等离子体处理方法，用于通过使用基于批量单位的等离子体处理样品，包括：使用多个传感器检测作为与样品的处理状态相关的监测数据的多种信息; 选择检测到的监视数据的检测时间范围; 将所选择的检测时间范围内的监视数据转换成转换信号; 基于转换的信号预测样本的图案形状; 计算处理参数的校正量，以减小预测图案形状与标准值之间的偏差; 并且当下一个批次的下一个样本的种类与样本不同时，转换通过计算操作获得的处理参数的校正量，从而使用用于下一个样本的处理的转换的处理参数的校正量。

公开(公告)号：US07208422B2

公开(公告)日：2007-04-24

申请号：US10953537

申请日：2004-09-30

申请人： Saburo Kanai ,  Kazue Takahashi ,  Kouichi Okamura ,  Ryoji Hamasaki ,  Satoshi Ito

发明人： Saburo Kanai ,  Kazue Takahashi ,  Kouichi Okamura ,  Ryoji Hamasaki ,  Satoshi Ito

IPC分类号： H01L21/302

CPC分类号： H01J37/32504 ,  H01J37/32522 ,  H01J2237/022 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831

摘要： A plasma processing method utilizing a plasma processing apparatus having a plasma generating unit, a process chamber including an outer cylinder for withstanding a reduced pressure, and an inner cylinder made of non-magnetic material and being replaceable arranged inside the outer cylinder, a process gas supply unit for supplying gas to the process chamber, a specimen table for holding a specimen and a vacuum pumping unit. A temperature of the inner cylinder is monitored, and a desired inner cylinder temperature which is inputted in advance in response to a processing condition of the specimen is compared with the monitored temperature of the inner cylinder. A temperature of the outer cylinder is controlled in response to a result of the comparison so as to control the inner cylinder temperature to a predetermined value.

摘要翻译： 一种利用等离子体处理装置的等离子体处理方法，该等离子体处理装置具有等离子体发生单元，具有用于承受减压的外筒的处理室，以及由非磁性材料制成的可更换的内筒， 用于向处理室供给气体的供给单元，用于保持试样的试样台和真空泵送单元。 监测内筒的温度，并将根据试样的加工条件预先输入的期望的内筒温度与内筒的监测温度进行比较。 响应于比较的结果来控制外筒的温度，以将内筒温度控制到预定值。

公开(公告)号：US20050090914A1

公开(公告)日：2005-04-28

申请号：US10987121

申请日：2004-11-15

申请人： Junichi Tanaka ,  Hiroyuki Kitsunai ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Kazue Takahashi

发明人： Junichi Tanaka ,  Hiroyuki Kitsunai ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Kazue Takahashi

IPC分类号： H01L21/205 ,  G05B23/02 ,  H01L21/00 ,  H01L21/02 ,  G05B11/01 ,  G05B15/00 ,  G05B21/02

CPC分类号： G05B21/02 ,  G05B19/41875 ,  G05B23/0221 ,  G05B2219/32053 ,  G05B2219/32182 ,  Y02P90/22

摘要： A monitor data acquisition section acquires a plurality of monitor data relating to a processing state of one sample in a processing apparatus, via sensors. A data selection section selects monitor data belonging to an arbitrary processing division included in a plurality of processing divisions for the sample, from among the plurality of monitor data. A monitoring signal generation section generates monitoring signals based on the monitor data belonging to the arbitrary processing division selected by the data selection section. A display setting controller displays a plurality of monitoring signals obtained with respect to samples processed in the processing apparatus, on a display section in a time series manner.

摘要翻译： 监视器数据获取部通过传感器获取与处理装置中的一个样本的处理状态有关的多个监视数据。 数据选择部从多个监视数据中选择属于包含在多个处理部中的任意处理分区的监视数据。 监视信号生成部基于属于由数据选择部选择的任意处理部的监视数据，生成监视信号。 显示设置控制器以时间序列方式在显示部分上显示关于在处理设备中处理的样本获得的多个监视信号。

公开(公告)号：US06879867B2

公开(公告)日：2005-04-12

申请号：US09945691

申请日：2001-09-05

申请人： Junichi Tanaka ,  Hiroyuki Kitsunai ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Kazue Takahashi

发明人： Junichi Tanaka ,  Hiroyuki Kitsunai ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Kazue Takahashi

IPC分类号： H01L21/205 ,  G05B23/02 ,  H01L21/00 ,  H01L21/02 ,  G06F19/00

CPC分类号： G05B21/02 ,  G05B19/41875 ,  G05B23/0221 ,  G05B2219/32053 ,  G05B2219/32182 ,  Y02P90/22

摘要： A monitor data acquisition section acquires a plurality of monitor data relating to a processing state of one sample in a processing apparatus, via sensors. A data selection section selects monitor data belonging to an arbitrary processing division included in a plurality of processing divisions for the sample, from among the plurality of monitor data. A monitoring signal generation section generates monitoring signals based on the monitor data belonging to the arbitrary processing division selected by the data selection section. A display setting controller displays a plurality of monitoring signals obtained with respect to samples processed in the processing apparatus, on a display section in a time series manner.

公开(公告)号：US06759253B2

公开(公告)日：2004-07-06

申请号：US09788629

申请日：2001-02-16

申请人： Tatehito Usui ,  Tetsuo Ono ,  Ryoji Nishio ,  Kazue Takahashi ,  Nobuyuki Mise

发明人： Tatehito Usui ,  Tetsuo Ono ,  Ryoji Nishio ,  Kazue Takahashi ,  Nobuyuki Mise

IPC分类号： H01L21302

CPC分类号： H01L22/34 ,  C23C16/50 ,  C23C16/52 ,  G01N21/73 ,  H01J37/32935 ,  H01L21/67253 ,  H01L2924/0002 ,  H01L2924/00

摘要： The intensity of the light emitted from the light-emitting diode on wafer is measured and then the potential difference between the terminals of the light-emitting element, and the plasma current flowing thereinto are derived from measured light intensity. Since the use of a camera enables non-contact measurement of emitted light intensity, the lead-in terminals for lead wires that are always required in conventional probing methods become unnecessary. In addition, since the target wafer does not require lead wire connection, wafers can be changed in the same way as performed for etching.

摘要翻译： 测量从晶片上的发光二极管发射的光的强度，然后从测量的光强度导出发光元件的端子与其中流动的等离子体电流之间的电位差。 由于使用相机能够非接触地测量发射的光强度，所以在常规探测方法中始终需要的导线的引入端子变得不必要。 此外，由于目标晶片不需要引线连接，因此可以以与蚀刻相同的方式来改变晶片。

公开(公告)号：US06676805B2

公开(公告)日：2004-01-13

申请号：US10107138

申请日：2002-03-28

申请人： Naoyuki Tamura ,  Kazue Takahashi ,  Youichi Ito ,  Yoshifumi Ogawa ,  Hiroyuki Shichida ,  Tsunehiko Tsubone

发明人： Naoyuki Tamura ,  Kazue Takahashi ,  Youichi Ito ,  Yoshifumi Ogawa ,  Hiroyuki Shichida ,  Tsunehiko Tsubone

IPC分类号： H05H100

CPC分类号： H01L21/6835 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6833 ,  H01L2924/3025 ,  Y10T279/23

摘要： A method and system of holding a substrate where foreign substances on the back surface can be decreased. The substrate holding system comprises a ring-shaped leakage-proof surface having a smooth surface on the specimen table corresponding to the periphery of the substrate, a plurality of contact holding portions within the periphery of the substrate, and electrostatic attraction means for fixing the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions. The substrate contacts to the cooling surface at the ring-shaped leakage-proof surface and the contact holding portion placed on a position inside the ring-shaped leakage-proof surface. The back surface of the substrate and the cooling surface do not contact to each other in the large portion of the remaining area.

摘要翻译： 可以减少背面上的异物的保持基板的方法和系统。 基板保持系统包括：在与基板周边相对应的样品台上具有光滑表面的环形防漏表面，在基板周边内的多个接触保持部分，以及用于固定基板的静电吸引装置 通过使基板的背面与环状的防漏面和接触保持部接触。 基板在环状防漏面与冷却面接触，接触保持部位置于环状防漏面内。 衬底的背面和冷却表面在剩余区域的大部分中彼此不接触。

公开(公告)号：US5906684A

公开(公告)日：1999-05-25

申请号：US50417

申请日：1998-03-31

申请人： Naoyuki Tamura ,  Kazue Takahashi ,  Youichi Ito ,  Yoshifumi Ogawa ,  Hiroyuki Shichida ,  Tsunehiko Tsubone

发明人： Naoyuki Tamura ,  Kazue Takahashi ,  Youichi Ito ,  Yoshifumi Ogawa ,  Hiroyuki Shichida ,  Tsunehiko Tsubone

IPC分类号： H01L21/00 ,  H01L21/68 ,  H01L21/683 ,  C23C16/00 ,  H05H1/00

CPC分类号： H01L21/6835 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6833 ,  H01L2924/3025 ,  Y10T279/23

摘要： In a method of holding a substrate and a substrate holding system where, the amount of foreign substances on the back surface of the substrate can be decreased and only a small amount of foreign substances transferred from a mounting table to the substrate. For this purpose, the substrate holding system has a ring-shaped leakage-proof surface providing a smooth support surface on the specimen table corresponding to the periphery of the substrate, a plurality of contact holding portions which bear against the substrate on the specimen table between the corresponding position to the periphery of the substrate and the corresponding position to the center of the substrate, and electrostatic attraction means for fixing the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions. The substrate is exposed to a cooling surface at the ring-shaped leakage-proof surface and the contact holding portion placed at a position inside the ring-shaped leakage-proof surface. The back surface of the substrate and the cooling surface do not contact each other in the large portion of the remaining area.

摘要翻译： 在保持基板和基板保持系统的方法中，可以减少基板的背面上的异物量，并且只有少量的异物从安装台传递到基板。 为此，基板保持系统具有环形防漏表面，在对应于基板的周边的样品台上提供平滑的支撑表面，多个接触保持部分抵靠在样品台上的基板上， 与基板周边相对应的位置和与基板中心相对应的位置，以及静电吸引装置，用于通过使基板的背面与环状的防漏表面接触而固定基板，以及接触保持部 。 将基板暴露于环状防漏表面处的冷却表面和位于环形防漏表面内的位置处的接触保持部。 基板的后表面和冷却表面在剩余区域的大部分中彼此不接触。

公开(公告)号：US5874012A

公开(公告)日：1999-02-23

申请号：US611758

申请日：1996-03-08

申请人： Saburo Kanai ,  Kazue Takahashi ,  Kouichi Okamura ,  Ryoji Hamasaki ,  Satoshi Ito

发明人： Saburo Kanai ,  Kazue Takahashi ,  Kouichi Okamura ,  Ryoji Hamasaki ,  Satoshi Ito

IPC分类号： C30B25/10 ,  C23F4/00 ,  C30B25/16 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  B44C1/22 ,  C23C16/00 ,  C23F1/02

CPC分类号： H01J37/32504 ,  H01J37/32522 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831 ,  H01J2237/022

摘要： A plasma processing apparatus is provided. In the apparatus, an inside surface of a process chamber is prevented from having its quality varied or becoming a heavy metal contamination source by plasma in the chamber, and at the same time the plasma characteristic is stabilized over time. In a plasma processing apparatus including a plasma generating unit, a process chamber capable of having its inside pressure reduced, a gas supply system for supplying a gas to the process chamber, a sample table for holding a sample and a vacuum pumping system, the process chamber has an outer cylinder capable of withstanding depressurization and an inner cylinder arranged inside the outer cylinder and being spaced therefrom through a gap, and a heater and a temperature control are provided in the outer cylinder. A non-magnetic metallic material not containing heavy metals, or ceramic, carbon, silicon or quartz is used for the inner cylinder. The temperature of the inner cylinder is controlled to a desired value by heating the outer cylinder using the heater and the temperature control. By controlling the temperature of the inner cylinder to, for example, 100.degree. C. to 350.degree. C., the surface temperature of the inner cylinder can be maintained at a desired value.

摘要翻译： 提供了一种等离子体处理装置。 在该装置中，通过室内的等离子体防止了处理室的内表面的质量变化或变成重金属污染源，同时等离子体特性随时间稳定。 在包括等离子体发生单元的等离子体处理装置中，能够使其内部压力降低的处理室，用于向处理室供给气体的气体供给系统，用于保持样品的样品台和真空泵送系统，该方法 腔室具有能够承受减压的外筒和布置在外筒内部并通过间隙与其间隔开的内筒，并且在外筒中设置加热器和温度控制。 内筒使用不含重金属或陶瓷，碳，硅或石英的非磁性金属材料。 通过使用加热器和温度控制加热外筒来将内筒的温度控制到期望值。 通过将内筒的温度控制在例如100〜350℃，能够将内筒的表面温度保持在期望值。

公开(公告)号：US5781400A

公开(公告)日：1998-07-14

申请号：US710514

申请日：1996-09-18

申请人： Kazue Takahashi ,  Youichi Itou ,  Saburo Kanai ,  Seiichiro Kanno

发明人： Kazue Takahashi ,  Youichi Itou ,  Saburo Kanai ,  Seiichiro Kanno

IPC分类号： H01L21/683 ,  H02N13/00

CPC分类号： H01L21/6833

摘要： The present invention allows the electrostatically attracting electrode, whose size corresponds to large-diameter wafers, to be fabricated easily and with precision. The first electrode 1 is provided with a recess in which to install the second electrode 2. An insulating film 4 is formed in the recess and then the second electrode is securely fitted in the recess. The assembled electrode is machined to make the surfaces of the first and second electrodes flush with each other in the same plane. The flat surfaces are covered with the sprayed electrostatic attraction film 3, which is then polished until it has a predetermined thickness. This fabrication process allows the electrostatic attraction electrode suitable to large-diameter wafers.

摘要翻译： 本发明允许容易且准确地制造其尺寸对应于大直径晶片的静电吸引电极。 第一电极1设置有用于安装第二电极2的凹部。绝缘膜4形成在凹部中，然后第二电极牢固地配合在凹部中。 加工组装好的电极使第一和第二电极的表面在同一平面上相互齐平。 平坦表面被喷涂的静电吸引膜3覆盖，然后将其抛光直到其具有预定厚度。 该制造工艺允许静电吸引电极适用于大直径晶片。