公开(公告)号：US07217932B2

公开(公告)日：2007-05-15

申请号：US10717904

申请日：2003-11-21

申请人： Minoru Niigaki ,  Yasufumi Takagi ,  Kazutoshi Nakajima ,  Yoshitaka Suzuki ,  Nobuharu Suzuki

发明人： Minoru Niigaki ,  Yasufumi Takagi ,  Kazutoshi Nakajima ,  Yoshitaka Suzuki ,  Nobuharu Suzuki

IPC分类号： G01J5/10

CPC分类号： G01J1/429 ,  H01L2224/48465

摘要： A UV sensor (1) includes a container (5) in which the upper end opening of a metal side tube (2) is sealed with a front plate (3) composed of borosilicate glass as an incident light window and the lower end opening is sealed with a base plate (4). The front plate (3) serving as an incident light window constitutes part of the wall of container (5) by sealing the upper end opening of the metal side tube (2). A pin-type photodiode (6) is disposed inside the container (5). The pin-type photodiode (6) comprises a photoabsorption layer (9) formed from InxGa(1−x)N (0

摘要翻译： UV传感器（1）包括容器（5），金属侧管（2）的上端开口用作为入射光窗的硼硅玻璃构成的前板（3）密封，下端开口 用基板（4）密封。 用作入射光窗的前板（3）通过密封金属侧管（2）的上端开口构成容器（5）的壁的一部分。 销式光电二极管（6）设置在容器（5）的内部。 针式光电二极管（6）包括由n个（n-1）x（1-x）N（0

公开(公告)号：US07214971B2

公开(公告)日：2007-05-08

申请号：US10864797

申请日：2004-06-10

申请人： Minoru Niigaki ,  Kazutoshi Nakajima

发明人： Minoru Niigaki ,  Kazutoshi Nakajima

IPC分类号： H01L29/32 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L31/03046 ,  H01L31/1035 ,  Y02E10/544

摘要： A semiconductor light-receiving device has a substrate including upper, middle and lower regions in its front side. A p-type layer on the lower region has a top surface including a portion on a level with the middle region. An electrode covers at least part of the boundary between the portion of the p-type layer and the middle region. An n-type layer on the p-type layer has a top surface including a portion on a level with the upper region. Another electrode covers at least part of the boundary between the portion of the n-type layer and the upper region.

摘要翻译： 半导体光接收装置具有包括其前侧的上部，中部和下部区域的基板。 下部区域上的p型层具有顶部表面，该顶部表面包括与中间区域在水平面上的部分。 电极覆盖p型层的部分和中间区域之间的边界的至少一部分。 p型层上的n型层具有包括与上部区域的层的一部分的顶面。 另一个电极覆盖n型层的部分和上部区域之间的边界的至少一部分。

公开(公告)号：US07094664B2

公开(公告)日：2006-08-22

申请号：US10416199

申请日：2001-11-09

申请人： Minoru Niigaki ,  Kazutoshi Nakajima

发明人： Minoru Niigaki ,  Kazutoshi Nakajima

IPC分类号： H01L21/30

CPC分类号： H01L31/0203 ,  H01L31/1085 ,  H01L31/184 ,  H01L31/1892 ,  H01L2224/45144 ,  H01L2224/48091 ,  Y02E10/544 ,  H01L2924/00014 ,  H01L2924/00

摘要： Multilayer films (2 to 7 ) containing a light absorption layer (4) are formed on a GaAs substrate. After laminating the GaAs substrate (1) and a glass substrate (8) so that an uppermost surface film (7) of the multilayer film and the glass substrate (8) may come into contact with each other, by pressurizing between the GaAs substrate (1) and the glass substrate (8) and heating them together, both substrates (1) and (8) are fusion-bonded. Next, the GaAs substrate (1) and the buffer layer (2) are first removed, and then the etch stop layer (3) is removed. Then, while coming into contact with the light absorption layer (4), comb-type Schottky electrodes (10) and (11), which are mutually apart, are formed.

摘要翻译： 在GaAs衬底上形成含有光吸收层（4）的多层膜（2〜7）。 在层叠GaAs基板（1）和玻璃基板（8）之后，通过在GaAs基板（3）之间加压，使得多层膜的最上表面膜（7）和玻璃基板（8） 1）和玻璃基板（8）并将它们加热在一起，两个基板（1）和（8）都被熔合。 接下来，首先去除GaAs衬底（1）和缓冲层（2），然后去除蚀刻停止层（3）。 然后，在与光吸收层（4）接触的同时，形成相互分开的梳型肖特基电极（10）和（11）。

公开(公告)号：US20050051784A1

公开(公告)日：2005-03-10

申请号：US10864797

申请日：2004-06-10

申请人： Minoru Niigaki ,  Kazutoshi Nakajima

发明人： Minoru Niigaki ,  Kazutoshi Nakajima

IPC分类号： H01L31/10 ,  H01L27/14 ,  H01L29/22 ,  H01L29/24 ,  H01L31/0304 ,  H01L31/103 ,  H01L33/00

CPC分类号： H01L31/03046 ,  H01L31/1035 ,  Y02E10/544

摘要： A semiconductor light-receiving device has a substrate including upper, middle and lower regions in its front side. A p-type layer on the lower region has a top surface including a portion on a level with the middle region. An electrode covers at least part of the boundary between the portion of the p-type layer and the middle region. An n-type layer on the p-type layer has a top surface including a portion on a level with the upper region. Another electrode covers at least part of the boundary between the portion of the n-type layer and the upper region.

摘要翻译： 半导体光接收装置具有包括其前侧的上部，中部和下部区域的基板。 下部区域上的p型层具有顶部表面，该顶部表面包括与中间区域在水平面上的部分。 电极覆盖p型层的部分和中间区域之间的边界的至少一部分。 p型层上的n型层具有包括与上部区域的水平面的部分的顶面。 另一个电极覆盖n型层的部分和上部区域之间的边界的至少一部分。

公开(公告)号：US20050014321A1

公开(公告)日：2005-01-20

申请号：US10416199

申请日：2001-11-09

申请人： Minoru Niigaki ,  Kazutoshi Nakajima

发明人： Minoru Niigaki ,  Kazutoshi Nakajima

IPC分类号： H01L29/872 ,  H01L29/47 ,  H01L31/0203 ,  H01L31/108 ,  H01L31/18 ,  H01L21/8238

CPC分类号： H01L31/0203 ,  H01L31/1085 ,  H01L31/184 ,  H01L31/1892 ,  H01L2224/45144 ,  H01L2224/48091 ,  Y02E10/544 ,  H01L2924/00014 ,  H01L2924/00

摘要： Multilayer films 2 to 7 containing a light absorption layer 4 are formed on a GaAs substrate. After laminating the GaAs substrate 1 and a glass substrate 8 so that an uppermost surface film 7 of the multilayer film and the glass substrate 8 may come into contact with each other, by pressurizing between the GaAs substrate 1 and the glass substrate 8 and heating them together, both substrates 1 and 8 are fusion-bonded. Next, the GaAs substrate 1 and the buffer layer 2 are first removed, and then the etch stop layer 3 is removed. Then, while coming into contact with the light absorption layer 4, comb-type Schottky electrodes 10 and 11, which are mutually apart, are formed.

摘要翻译： 在GaAs衬底上形成含有光吸收层4的多层膜2〜7。 在层叠了GaAs衬底1和玻璃衬底8之后，通过在GaAs衬底1和玻璃衬底8之间加压并加热它们，使得多层膜的最上表面膜7和玻璃衬底8可能相互接触 一起，基板1和8都被熔接。 接下来，首先除去GaAs衬底1和缓冲层2，然后去除蚀刻停止层3。 然后，在与光吸收层4接触的同时，形成相互分离的梳型肖特基电极10和11。

公开(公告)号：US07208874B2

公开(公告)日：2007-04-24

申请号：US10507011

申请日：2003-02-24

申请人： Minoru Niigaki ,  Shoichi Uchiyama ,  Hirofumi Kan

发明人： Minoru Niigaki ,  Shoichi Uchiyama ,  Hirofumi Kan

IPC分类号： H01J40/06 ,  H01J43/00

CPC分类号： H01J31/50 ,  H01J1/32 ,  H01J29/023 ,  H01J29/482 ,  H01J31/506 ,  H01J43/22

摘要： A transmission secondary electron emitter is provided which emits secondary electrons generated by the incidence of primary electrons. The transmission secondary electron emitter includes a secondary electron emitting layer which is made of diamond or a material containing diamond as a main component, and of which one surface is the surface of incidence for making the primary electrons incident thereon, and the other surface is the surface of emission for emitting the secondary electrons. Also included is a voltage applying arrangement for applying a predetermined voltage between the surfaces of the incidence and the emission of the secondary electron emitting layer to form an electric field in the secondary electron emitting layer.

摘要翻译： 提供发射二次电子发射器，其发射由一次电子的入射产生的二次电子。 透射二次电子发射体包括由金刚石制成的二次电子发射层，或以金刚石为主要成分的材料，其中一个表面是使一次电子入射到其上的入射面，另一面为 用于发射二次电子的发射表面。 还包括用于在入射表面和二次电子发射层的发射之间施加预定电压以在二次电子发射层中形成电场的电压施加装置。

公开(公告)号：US07910895B2

公开(公告)日：2011-03-22

申请号：US11547807

申请日：2005-04-07

申请人： Shoichi Uchiyama ,  Yasufumi Takagi ,  Minoru Niigaki ,  Minoru Kondo ,  Itaru Mizuno

发明人： Shoichi Uchiyama ,  Yasufumi Takagi ,  Minoru Niigaki ,  Minoru Kondo ,  Itaru Mizuno

IPC分类号： H01J49/02

CPC分类号： H01J37/244 ,  H01J49/025 ,  H01J2237/2443 ,  H01L33/502

摘要： A light-emitting body of rapid speed of response and high light emission intensity, and an electron beam detector, scanning electron microscope and mass spectroscope using this are provided. In the light-emitting body 10 according to the present invention, when fluorescence is emitted by a nitride semiconductor layer 14 formed on one face 12a of a substrate 12 in response to incidence of electrons, at least some of this fluorescence is transmitted through this substrate 12, whereby that fluorescence is emitted from the other face 12b of the substrate. The response speed of this fluorescence is not more than μsec order. Also, the intensity of emission of this fluorescence is almost identical to that of a conventional P47 phosphor. Specifically, with this light-emitting body 10, a response speed and light emission intensity are obtained that are fully satisfactory for application to a scanning electron microscope or mass spectroscope. In addition, a cap layer 16 contributes to improvement in the persistence rate of light emission in the nitride semiconductor layer 14, so, with this light-emitting body 10, not only high-speed response and high light emission intensity are obtained, but also an excellent persistence rate.

摘要翻译： 提供了快速响应和高发光强度的发光体，以及使用该发光体的电子束检测器，扫描电子显微镜和质谱仪。 在根据本发明的发光体10中，当响应于电子的入射而形成在衬底12的一个面12a上的氮化物半导体层14发射荧光时，该荧光中的至少一部分透过该衬底 从而从基板的另一面12b发射荧光。 该荧光的响应速度不超过μsec次。 此外，该荧光的发射强度与常规P47荧光体的发射强度几乎相同。 具体地说，利用该发光体10，可以获得对扫描型电子显微镜或质谱仪应用完全满意的响应速度和发光强度。 此外，盖层16有助于提高氮化物半导体层14中的发光持续率，所以利用该发光体10，不仅获得高速响应和高发光强度，而且 持久性很好。

公开(公告)号：US07586968B2

公开(公告)日：2009-09-08

申请号：US11878745

申请日：2007-07-26

申请人： Minoru Niigaki ,  You Wang ,  Yujin Zheng ,  Hirofumi Kan

发明人： Minoru Niigaki ,  You Wang ,  Yujin Zheng ,  Hirofumi Kan

IPC分类号： H01S3/22

CPC分类号： H01S3/227 ,  H01S3/02 ,  H01S3/041 ,  H01S3/08054 ,  H01S3/0815 ,  H01S3/09415 ,  H01S3/1028 ,  H01S5/4062

摘要： An alkali-encapsulated cell internally having an alkali metal vapor G encapsulated is provided with first and second heaters 11, 12. The alkali-encapsulated cell 10 has first and second end faces 10a, 10b opposed to each other, and a side face 10c connecting the two end faces 10a, 10b. Each of the first and second heaters 11, 12 has a covering portion 11B, 12B and an extending portion 11C, 12C. Some portions of the alkali-encapsulated cell 10 are inserted in the covering portions 11B, 12B. On the other hand, the extending portions 11C, 12C extend in directions away from the alkali-encapsulated cell 10. The first and second heaters 11, 12 are separated from each other with a distance d0 between them in an opposing direction of the first and second end faces 10a, 10b.

摘要翻译： 在内部具有封入了碱金属蒸气G的碱封装的电池设置有第一和第二加热器11,12。碱封装的电池10具有彼此相对的第一和第二端面10a，10b，以及连接 两个端面10a，10b。 第一和第二加热器11,12中的每一个具有覆盖部分11B，12B和延伸部分11C，12C。 碱封装电池10的一部分插入到覆盖部11B，12B中。 另一方面，延伸部分11C，12C沿着远离碱封装的电池10的方向延伸。第一和第二加热器11,12彼此分开，在它们之间的距离d0在第一和第二加热器10的相反方向上 第二端面10a，10b。

公开(公告)号：US20080116368A1

公开(公告)日：2008-05-22

申请号：US11547807

申请日：2005-04-07

申请人： Shoichi Uchiyama ,  Yasufumi Takagi ,  Minoru Niigaki ,  Minoru Kondo ,  Itaru Mizuno

发明人： Shoichi Uchiyama ,  Yasufumi Takagi ,  Minoru Niigaki ,  Minoru Kondo ,  Itaru Mizuno

IPC分类号： B01D59/44 ,  G01N23/225 ,  H01L29/12

CPC分类号： H01J37/244 ,  H01J49/025 ,  H01J2237/2443 ,  H01L33/502

摘要： A light-emitting body of rapid speed of response and high light emission intensity, and an electron beam detector, scanning electron microscope and mass spectroscope using this are provided. In the light-emitting body 10 according to the present invention, when fluorescence is emitted by a nitride semiconductor layer 14 formed on one face 12a of a substrate 12 in response to incidence of electrons, at least some of this fluorescence is transmitted through this substrate 12, whereby that fluorescence is emitted from the other face 12b of the substrate. The response speed of this fluorescence is not more than μsec order. Also, the intensity of emission of this fluorescence is almost identical to that of a conventional P47 phosphor. Specifically, with this light-emitting body 10, a response speed and light emission intensity are obtained that are fully satisfactory for application to a scanning electron microscope or mass spectroscope. In addition, a cap layer 16 contributes to improvement in the persistence rate of light emission in the nitride semiconductor layer 14, so, with this light-emitting body 10, not only high-speed response and high light emission intensity are obtained, but also an excellent persistence rate.

摘要翻译： 提供了快速响应和高发光强度的发光体，以及使用该发光体的电子束检测器，扫描电子显微镜和质谱仪。 在根据本发明的发光体10中，当响应于电子的入射而形成在衬底12的一个面12a上的氮化物半导体层14发射荧光时，通过该荧光透射中的至少一些荧光 衬底12，从而荧光从衬底的另一个面12bb发射。 该荧光的响应速度不超过音乐顺序。 此外，该荧光的发射强度与常规P47荧光体的发射强度几乎相同。 具体地说，利用该发光体10，可以获得对扫描型电子显微镜或质谱仪应用完全满意的响应速度和发光强度。 此外，盖层16有助于提高氮化物半导体层14中的发光持续率，所以利用该发光体10，不仅获得高速响应和高发光强度，而且 持久性很好。

公开(公告)号：US07045957B2

公开(公告)日：2006-05-16

申请号：US10223378

申请日：2002-08-20

申请人： Minoru Niigaki ,  Shoichi Uchiyama ,  Hirofumi Kan

发明人： Minoru Niigaki ,  Shoichi Uchiyama ,  Hirofumi Kan

IPC分类号： H01J40/06

CPC分类号： H01J43/08 ,  H01J1/34 ,  H01J40/06 ,  H01J2201/3421 ,  H01J2231/50021 ,  Y10T428/30

摘要： In the polycrystal diamond thin film in accordance with the present invention, the average particle size is at least 1.5 μm and, in a Raman spectrum obtained by Raman spectroscopy, a peak intensity near a wave number of 1580 cm−1 has a ratio of 0.2 or less with respect to a peak intensity near a wave number of 1335 cm−1. The photocathode and electron tube in accordance with the present invention comprise the polycrystal diamond thin film as a light-absorbing layer.

摘要翻译： 在本发明的多晶金刚石薄膜中，平均粒径为1.5μm以上，通过拉曼光谱法获得的拉曼光谱中，波数为1580cm -1以上的峰强度， SUP>相对于波数为1335cm -1附近的峰值强度具有0.2或更小的比率。 根据本发明的光电阴极和电子管包括多晶金刚石薄膜作为光吸收层。