摘要:
A cholesteric liquid crystal composition homogenously having a desired pitch length and pitch gradient and capable of giving a layer having a broad selective reflection bandwidth; a circularly-polarized light separating sheet having the broad selective reflection bandwidth and capable of being produced simply and homogenously; and a method for producing such a sheet. A cholesteric liquid crystal composition which contains a nematic liquid crystal compound having a reactive group, contains a chiral agent, has a Δn value of 0.18 or more and has an absolute value of a temperature dependency parameter δλ represented by δλ={(2(λb−λa)/(λb+λa)}×{100/(b−a)} (“a” and “b” represent the temperature (° C.), λa represents a selective reflection center wavelength at “a” ° C. and λb represents the selective reflection center wavelength at “b” ° C.) of 0.50 or less at “a”=25 and “b”=100; the circularly-polarized light separating sheet having a cured layer of the composition and the selective reflection bandwidth of 300 nm or more; and a method for producing the sheet using said composition.
摘要:
A method for producing an alkylsiloxane aerogel of the invention includes (a) a step of letting a reaction to produce a sol and a reaction to convert the sol to a gel take place in one step by adding a silicon compound whose molecules have a hydrolysable functional group and a nonhydrolysable functional group to an acidic aqueous solution containing a surfactant, and (b) a step of drying the gel produced in the step (a). In the step (b), the gel is dried at a temperature and a pressure below the critical point of a solvent used to dry the gel.
摘要:
There is provided a zinc oxide based compound semiconductor device in which drive voltage is not raised, property of crystal is satisfactory and device characteristics is excellent, even when the semiconductor device is formed by forming a lamination portion having a hetero junction of the ZnO based compound semiconductor layers. The zinc oxide based compound semiconductor device includes a substrate (1) made of MgxZn1-xO (0≦x≦0.5), the principal plane of which is a plane A (11-20) or a plane M (10-10), and single crystal layers (2) to (6) made of zinc oxide based compound semiconductor, which are epitaxially grown on the principal plane of the substrate (1) in such orientation that a plane parallel to the principal plane is a plane {11-20} or a plane {10-10} and a plane perpendicular to the principal plane is a plane {0001}.
摘要翻译:提供了一种氧化锌基化合物半导体器件,其中驱动电压不升高,晶体性能令人满意并且器件特性优异,即使通过形成具有ZnO基化合物的异质结的层叠部分形成半导体器件, 半导体层。 氧化锌系化合物半导体装置包括:由主要平面A(11-20)或平面M(10-10)构成的由Mg x Zn 1-x O(0≤x≤0.5)构成的基板(1) )和由氧化锌基化合物半导体制成的单晶层(2)至(6),其以基板(1)的主平面外延生长,使得平行于主平面的平面为{ 11-20}或平面{10-10},垂直于主平面的平面为{0001}平面。
摘要:
A container of a material supply apparatus is configured of a crucible and an orifice. The crucible has a cylindrical shape, a rectangular-column shape or the like, and is hollow. Heat sources such as heaters are disposed around the crucible. The orifice including an opening is provided on a side of the crucible in a material element supplying direction. The orifice includes a pipe portion that extends in the material element supplying direction. The opening is formed on a tip of the pipe portion. An opening area of the pipe portion is formed to become gradually narrower towards the material element supplying side, namely in a direction of the opening.