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    ZnO-BASED THIN FILM
    1.
    发明申请
    ZnO-BASED THIN FILM 审中-公开
    基于ZnO的薄膜

    公开(公告)号：US20100323160A1

    公开(公告)日：2010-12-23

    申请号：US12526113

    申请日：2008-02-06

    申请人： Ken Nakahara ,  Hiroyuki Yuji ,  Kentaro Tamura ,  Shunsuke Akasaka ,  Masashi Kawasaki ,  Akira Ohtomo ,  Atsushi Tsukazaki

    发明人： Ken Nakahara ,  Hiroyuki Yuji ,  Kentaro Tamura ,  Shunsuke Akasaka ,  Masashi Kawasaki ,  Akira Ohtomo ,  Atsushi Tsukazaki

    IPC分类号： B32B33/00 ,  C30B29/16 ,  B32B9/00

    CPC分类号： H01L21/02554 ,  C30B23/02 ,  C30B29/16 ,  H01L21/02403 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0262 ,  Y10T428/24355 ,  Y10T428/2457 ,  Y10T428/24612

    摘要： Provided is a ZnO-based thin film for growing a flat film when the ZnO-based thin film is formed on a substrate. In FIG. 1(a), a ZnO-based film 2 is formed on a ZnO-based substrate 1. Meanwhile, in FIG. 1(b), a ZnO-based laminated body 10 that is a laminated body of ZnO-based thin films is formed on the ZnO-based substrate 1. The ZnO-based laminated body 10 is the laminated body in which multiple ZnO-based thin films including a ZnO-based thin film 3, a ZnO-based thin film 4 and the like are laminated. When forming the ZnO-based thin film 2 or the ZnO-based laminated body 10, the film or the body is formed at a growth temperature of 750° C. or above, or alternatively, a step structure on a surface of the film is formed into a predetermined structure such that roughness on the surface of the film is in a predetermined range.

    摘要翻译： 提供了当在基板上形成ZnO基薄膜时用于生长平坦膜的ZnO基薄膜。 在图 如图1（a）所示，在ZnO系基板1上形成ZnO系膜2。 如图1（b）所示，在ZnO系基板1上形成作为ZnO系薄膜的层叠体的ZnO系叠层体10. ZnO系叠层体10为多层ZnO系 层叠包含ZnO系薄膜3，ZnO系薄膜4等的薄膜。 当形成ZnO基薄膜2或ZnO基层叠体10时，在750℃以上的生长温度下形成薄膜或者本体，或者也可以在薄膜的表面上形成台阶结构 形成为预定结构，使得薄膜表面上的粗糙度处于预定范围内。

    Semiconductor Light Emitting Device
    2.
    发明申请
    Semiconductor Light Emitting Device 有权
    半导体发光装置

    公开(公告)号：US20080073659A1

    公开(公告)日：2008-03-27

    申请号：US11662097

    申请日：2005-09-07

    申请人： Kentaro Tamura ,  Ken Nakahara

    发明人： Kentaro Tamura ,  Ken Nakahara

    IPC分类号： H01L33/00

    CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L33/405

    摘要： A semiconductor light emitting device is provided, in which the light emitting efficiency of a LED is improved. A semiconductor light emitting device (11) includes a light emitting layer (16) made of a GaN-based semiconductor sandwiched with an n-type GaN-based semiconductor layer (17) and a p-type GaN-based semiconductor layer (15), and a ZnO-based or an ITO transparent electrode layer (14). Further, a value of an equation represented by 3t/(A/π)1/2−3(t/(A/π)1/2)2+(t/(A/π)1/2)3 is 0.1 or more, where a thickness of the transparent electrode layer is represented by t and an area of the light emitting layer (light emitting area) of the light emitting device (11) is represented by A. The light emitting efficiency is improved using the transparent electrode layer (14) having an optimum thickness to the light emitting area.

    摘要翻译： 提供了一种提高了LED的发光效率的半导体发光器件。 半导体发光器件（11）包括由夹在n型GaN基半导体层（17）和p型GaN基半导体层（15）之间的GaN基半导体制成的发光层（16） ，以及ZnO系或ITO透明电极层（14）。 此外，由3t /（A / pi）×1 / 3-3（t /（A / pi）1/2）表示的等式的值 2 +（t /（A / pi）1/2）3 3以上，透明电极层的厚度为t 并且发光器件（11）的发光层（发光区域）的面积由A表示。使用对于发光区域具有最佳厚度的透明电极层（14）来提高发光效率。

    Nitride Semiconductor Device and Method for Growing Nitride Semiconductor Crystal Layer
    3.
    发明申请
    Nitride Semiconductor Device and Method for Growing Nitride Semiconductor Crystal Layer 审中-公开
    氮化物半导体器件和氮化物半导体晶体层生长方法

    公开(公告)号：US20080308836A1

    公开(公告)日：2008-12-18

    申请号：US11883062

    申请日：2006-01-26

    申请人： Ken Nakahara ,  Kentaro Tamura

    发明人： Ken Nakahara ,  Kentaro Tamura

    IPC分类号： H01L33/00 ,  H01L21/00

    CPC分类号： H01L21/02658 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/66454 ,  H01L29/66462 ,  H01L29/7787 ,  H01L33/007 ,  H01L33/12

    摘要： There are provided a nitride semiconductor device such as a nitride semiconductor light emitting device, a transistor device or the like, obtained by forming a buffer layer of a single crystal of the nitride semiconductor, in which both a-axis and c-axis are aligned, directly on a substrate lattice-mismatched with the nitride semiconductor without forming an amorphous low temperature buffer layer, and growing epitaxially the nitride semiconductor layer on the buffer layer of the single crystal. In this device, a single crystal buffer layer (2), made of a single crystal of AlxGayIn1-x-yN (0≦x≦1, 0≦y≦1 and 0≦x+y≦1), in which a-axis and c-axis are aligned, is directly formed on a substrate (1) lattice-mismatched with nitride semiconductor, and a nitride semiconductor layer (3) is epitaxially grown on the buffer layer (2) of the single crystal. The buffer layer of the single crystal can be formed by the use of a PLD method.

    摘要翻译： 提供了一种氮化物半导体器件，例如氮化物半导体发光器件，晶体管器件等，其通过形成氮化物半导体的单晶的缓冲层而获得，其中a轴和c轴都被对准 直接在与氮化物半导体晶格失配的衬底上，而不形成非晶低温缓冲层，并且在单晶缓冲层上外延生长氮化物半导体层。 在该器件中，由AlxGayIn1-x-yN（0≤x≤1,0<= y <= 1和0 <= x + y <= 1）的单晶制成的单晶缓冲层（2） ），其中a轴和c轴对准，直接形成在与氮化物半导体晶格失配的衬底（1）上，并且氮化物半导体层（3）外延生长在 单晶。 单晶的缓冲层可以通过使用PLD法形成。

    MULTILAYER SUBSTRATE
    4.
    发明申请
    MULTILAYER SUBSTRATE 审中-公开
    多层基板

    公开(公告)号：US20080187776A1

    公开(公告)日：2008-08-07

    申请号：US12026863

    申请日：2008-02-06

    申请人： Ken Nakahara ,  Hiroyuki Yuji ,  Kentaro Tamura ,  Shunsuke Akasaka ,  Yoshio Nishimoto ,  Masashi Kawasaki ,  Akira Ohtomo ,  Atsushi Tsukazaki

    发明人： Ken Nakahara ,  Hiroyuki Yuji ,  Kentaro Tamura ,  Shunsuke Akasaka ,  Yoshio Nishimoto ,  Masashi Kawasaki ,  Akira Ohtomo ,  Atsushi Tsukazaki

    IPC分类号： B32B15/00

    CPC分类号： C23C28/322 ,  C23C28/34 ,  C23C28/345 ,  C23C28/3455 ,  Y10T428/12778

    摘要： Provided is a multilayer substrate having the configuration in which a multilayer film is formed on a principal surface opposite to a principal surface in the oxide-thin-film lamination direction in a translucent substrate. The multilayer film is formed by sequentially laminating a dielectric film, Au (gold) film, and oxide film in this order from the translucent substrate. On the principal surface opposite to the principal surface on which the oxide thin film is disposed, the multilayer film containing the Au film is formed, the Au film can reflect and block the excessive infrared light from a substrate holder or a heat source at the time of growth. As a result, temperature can be accurately measured.

    摘要翻译： 提供一种多层基板，其具有在透光性基板中在与氧化物薄膜层叠方向的主面相反的主面上形成多层膜的结构。 通过从透光性基板依次层叠电介质膜Au（金）膜和氧化膜而形成多层膜。 在与设置有氧化物薄膜的主表面相对的主表面上形成含有Au膜的多层膜，Au膜可以反映并阻挡来自衬底保持器或热源的过多红外光 的增长。 结果，可以精确地测量温度。

    OXIDE THIN FILM AND OXIDE THIN FILM DEVICE
    10.
    发明申请
    OXIDE THIN FILM AND OXIDE THIN FILM DEVICE 审中-公开
    氧化物薄膜和氧化物薄膜装置

    公开(公告)号：US20100090214A1

    公开(公告)日：2010-04-15

    申请号：US12450614

    申请日：2008-04-02

    申请人： Ken Nakahara ,  Hiroyuki Yuji ,  Kentaro Tamura ,  Shunsuke Akasaka ,  Masashi Kawasaki ,  Akira Ohtomo ,  Atsushi Tsukazaki

    发明人： Ken Nakahara ,  Hiroyuki Yuji ,  Kentaro Tamura ,  Shunsuke Akasaka ,  Masashi Kawasaki ,  Akira Ohtomo ,  Atsushi Tsukazaki

    IPC分类号： H01L29/22

    CPC分类号： C23C14/08 ,  C23C28/04 ,  C23C28/322 ,  C23C28/345 ,  C23C28/42 ,  C23C30/00 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02631 ,  H01L33/285

    摘要： Provided are an oxide thin film doped with an n-type impurity, and an oxide thin film device. In an oxide thin film (2), as shown in FIG. 1(b), doped oxide layers (2a) doped with an n-type (electron-conductivity type) impurity and undoped oxide layers (2b) not doped with an n-type impurity are laminated in an alternating and repeated manner. When an oxide layer is doped with the n-type impurity at a high concentration, roughness of a surface of the oxide layer becomes large. For this reason, the doped oxide layers (2a) are covered with the undoped oxide layers (2b) capable of ensuring surface flatness, before surface roughness attributable to the doped oxide layers (2a) becomes very large. Thus, a flat oxide thin film can be formed.

    摘要翻译： 提供掺杂有n型杂质的氧化物薄膜和氧化物薄膜器件。 在氧化物薄膜（2）中，如图1所示， 如图1（b）所示，掺杂有n型（电子传导型）杂质的掺杂氧化物层（2a）和未掺杂n型杂质的未掺杂氧化物层（2b）以交替重复的方式层叠。 当以高浓度掺杂n型杂质的氧化物层时，氧化物层的表面的粗糙度变大。 为此，在由掺杂氧化物层（2a）引起的表面粗糙度变得非常大之前，掺杂氧化物层（2a）被能够确保表面平坦度的未掺杂氧化物层（2b）覆盖。 因此，可以形成平坦的氧化物薄膜。