公开(公告)号：US08119463B2

公开(公告)日：2012-02-21

申请号：US12507725

申请日：2009-07-22

申请人： Jae Bon Koo ,  In-Kyu You ,  Seongdeok Ahn ,  Kyoung Ik Cho

发明人： Jae Bon Koo ,  In-Kyu You ,  Seongdeok Ahn ,  Kyoung Ik Cho

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L29/78603 ,  H01L27/1266 ,  H01L29/66757 ,  H01L29/78618

摘要： Provided is a method of manufacturing a thin film transistor that can improve self-alignment. In this method, a semiconductor layer comprising a first doped region, a second doped region and a channel region is formed on a sacrificial layer on a first substrate. Next, the semiconductor layer is separated from the first substrate and is then coupled on a second substrate. Next, a dielectric layer is formed on the second substrate and the semiconductor layer, and a first photoresist layer is formed on the dielectric layer. Thereafter, the first photoresist layer is exposed to light from a rear surface of the second substrate by using the first doped region and the second doped region as a mask, to form a first mask pattern. Next, a gate electrode overlapping the channel region is formed on the dielectric layer by using the first mask pattern as a mask, and a source electrode and a drain electrode connected to the first doped region and the second doped region, respectively are formed to complete a thin film transistor.

摘要翻译： 提供了一种可以改善自对准的薄膜晶体管的制造方法。 在该方法中，在第一衬底上的牺牲层上形成包括第一掺杂区域，第二掺杂区域和沟道区域的半导体层。 接下来，半导体层与第一衬底分离，然后耦合在第二衬底上。 接下来，在第二基板和半导体层上形成电介质层，在电介质层上形成第一光致抗蚀剂层。 此后，通过使用第一掺杂区域和第二掺杂区域作为掩模，将第一光致抗蚀剂层从第二基板的后表面曝光，以形成第一掩模图案。 接下来，通过使用第一掩模图案作为掩模在介电层上形成与沟道区重叠的栅电极，分别形成连接到第一掺杂区和第二掺杂区的源电极和漏极，以完成 薄膜晶体管。

公开(公告)号：US20100243994A1

公开(公告)日：2010-09-30

申请号：US12555986

申请日：2009-09-09

申请人： Sung Min Yoon ,  Shin Hyuk Yang ,  Soon Woon Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

发明人： Sung Min Yoon ,  Shin Hyuk Yang ,  Soon Woon Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

IPC分类号： H01L27/115 ,  H01L51/10 ,  H01L29/12 ,  H01L21/8246

CPC分类号： H01L21/28291 ,  H01L29/78391 ,  H01L29/7869

摘要： Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.

摘要翻译： 提供了一种透明非易失性存储器薄膜晶体管（TFT）及其制造方法。 存储TFT包括设置在透明基板上的源极和漏极。 透明半导体薄层设置在源电极和漏电极之间，并且透明基板设置在源极和漏极之间。 有机铁电薄层设置在透明半导体薄层上。 栅电极与透明半导体薄层对准地设置在有机铁电薄层上。 因此，透明非易失性存储器TFT采用有机铁电薄层，氧化物半导体薄层和设置在有机铁电薄层之上和之下的辅助绝缘层，从而能够低成本地制造能够低的透明非易失性存储器件 温度过程。

公开(公告)号：US20100237374A1

公开(公告)日：2010-09-23

申请号：US12727632

申请日：2010-03-19

申请人： Hye Yong CHU ,  Jeong Ik Lee ,  Jong Hee Lee ,  Kyoung Ik Cho

发明人： Hye Yong CHU ,  Jeong Ik Lee ,  Jong Hee Lee ,  Kyoung Ik Cho

IPC分类号： H01L51/52

CPC分类号： H01L27/3227 ,  H01L27/288 ,  H01L31/056 ,  H01L51/5206 ,  H01L51/5218 ,  H01L51/5271 ,  H01L2251/5315 ,  H01L2251/5323 ,  H01L2251/5361 ,  H02S40/38 ,  Y02E10/52

摘要： Provided is a transparent organic light emitting diode (OLED) lighting device in which opaque metal reflectors are formed to adjust light emitting directions. The transparent OLED lighting device includes a transparent substrate, a transparent anode formed on a predetermined region of the transparent substrate, a reflective anode formed adjacent to the transparent anode on another region of the transparent substrate, an organic layer formed on the transparent and reflective anodes, and a transparent cathode and an encapsulation substrate sequentially stacked on the organic layer. Directions of light emitted from the organic layer vary depending on the current applied to the transparent and reflective anodes.

摘要翻译： 提供了一种透明有机发光二极管（OLED）照明装置，其中形成不透明金属反射器以调节发光方向。 透明OLED照明装置包括透明基板，形成在透明基板的预定区域上的透明阳极，在透明基板的另一区域上与透明阳极相邻形成的反射阳极，形成在透明和反射阳极上的有机层 以及依次层叠在有机层上的透明阴极和封装基板。 从有机层发射的光的方向根据施加到透明和反射阳极的电流而变化。

公开(公告)号：US20100144088A1

公开(公告)日：2010-06-10

申请号：US12631206

申请日：2009-12-04

申请人： Jiyoung Oh ,  Jonghyurk Park ,  Seung Youl Kang ,  Chul Am Kim ,  In-Kyu You ,  Kyoung Ik Cho

发明人： Jiyoung Oh ,  Jonghyurk Park ,  Seung Youl Kang ,  Chul Am Kim ,  In-Kyu You ,  Kyoung Ik Cho

IPC分类号： H01L21/328 ,  C01G9/02

CPC分类号： H01L29/7869 ,  B82Y10/00 ,  C01G9/02 ,  C01P2002/52 ,  C01P2004/03 ,  C01P2006/40 ,  H01L29/66969

摘要： Provided is a method for forming a metal oxide. A method for forming a metal oxide according to embodiments of the present invention includes preparing a metal oxide precursor solution including a dopant chemical species, preparing an alcohol-based solution including a basic chemical species, reacting the alcohol-based solution with the metal oxide precursor solution to form a reactant, and purifying the reactant to form a metal oxide.

摘要翻译： 提供了形成金属氧化物的方法。 根据本发明实施方案的形成金属氧化物的方法包括制备包括掺杂剂化学物质的金属氧化物前体溶液，制备包含碱性化学物质的醇基溶液，使醇类溶液与金属氧化物前体反应 溶液以形成反应物，并纯化反应物以形成金属氧化物。

公开(公告)号：US07659799B2

公开(公告)日：2010-02-09

申请号：US11588176

申请日：2006-10-25

申请人： Dong Suk Jun ,  Kyoung Ik Cho ,  Hong Yeol Lee ,  Dong Young Kim ,  Sang Seok Lee

发明人： Dong Suk Jun ,  Kyoung Ik Cho ,  Hong Yeol Lee ,  Dong Young Kim ,  Sang Seok Lee

IPC分类号： H01P1/208

CPC分类号： H01P1/2088

摘要： Provided is a dielectric waveguide filter. The filter includes: a multi-layered structure of dielectric substrates having first and second ground planes at its top and bottom; first, second, and third waveguide resonators disposed at multiple layers within the multi-layered structure; converters for signal transition between input/output ports and the first and third waveguide resonators; first vias for forming the first, second, and third waveguide resonators; and second vias disposed at a boundary surface of the first waveguide resonator and the third waveguide resonator.

摘要翻译： 提供了一种电介质波导滤波器。 该滤波器包括：绝缘基片的多层结构，其顶部和底部具有第一和第二接地平面; 设置在多层结构内的多层的第一，第二和第三波导谐振器; 转换器，用于输入/输出端口与第一和第三波导谐振器之间的信号转换; 用于形成第一，第二和第三波导谐振器的第一通孔; 以及设置在第一波导谐振器和第三波导谐振器的边界面处的第二通孔。

公开(公告)号：US20100006837A1

公开(公告)日：2010-01-14

申请号：US12496558

申请日：2009-07-01

申请人： Doo Hee Cho ,  Sang Hee Park ,  Chi Sun Hwang ,  Hye Yong Chu ,  Kyoung Ik Cho ,  Shin Hyuk Yang ,  Chun Won Byun ,  Eun Suk Park ,  Oh Sang Kwon ,  Min Ki Ryu ,  Jae Heon Shin ,  Woo Seok Cheong ,  Sung Mook Chung ,  Jeong Ik Lee

发明人： Doo Hee Cho ,  Sang Hee Park ,  Chi Sun Hwang ,  Hye Yong Chu ,  Kyoung Ik Cho ,  Shin Hyuk Yang ,  Chun Won Byun ,  Eun Suk Park ,  Oh Sang Kwon ,  Min Ki Ryu ,  Jae Heon Shin ,  Woo Seok Cheong ,  Sung Mook Chung ,  Jeong Ik Lee

IPC分类号： H01L29/786 ,  H01L21/336 ,  H01B1/08

CPC分类号： H01L29/7869 ,  C23C14/08 ,  H01L29/247

摘要： Provided are a composition for an oxide semiconductor thin film, a field effect transistor using the same and a method of fabricating the field effect transistor. The composition includes an aluminum oxide, a zinc oxide, an indium oxide and a tin oxide. The thin film formed of the composition is in amorphous phase. The field effect transistor having an active layer formed of the composition can have an improved electrical characteristic and be fabricated by a low temperature process.

摘要翻译： 提供了一种用于氧化物半导体薄膜的组合物，使用该组合物的场效应晶体管和制造场效应晶体管的方法。 该组合物包括氧化铝，氧化锌，氧化铟和氧化锡。 由组合物形成的薄膜是非晶相。 具有由组合物形成的有源层的场效应晶体管可以具有改进的电特性并通过低温工艺制造。

公开(公告)号：US20080142843A1

公开(公告)日：2008-06-19

申请号：US12068161

申请日：2008-02-04

申请人： Jin Yeong Kang ,  Scung Yun Lee ,  Kyoung Ik Cho

发明人： Jin Yeong Kang ,  Scung Yun Lee ,  Kyoung Ik Cho

IPC分类号： H01L27/12 ,  H01L29/778 ,  H01L21/336 ,  H01L21/84

CPC分类号： H01L29/66242 ,  H01L21/84 ,  H01L27/1203

摘要： Provided are an NMOS device, a PMOS device and a SiGe HBT device which are implemented on an SOI substrate and a method of fabricating the same. In manufacturing a Si-based high speed device, a SiGe HBT and a CMOS are mounted on a single SOI substrate. In particular, a source and a drain of the CMOS are formed of SiGe and metal, and thus leakage current is prevented and low power consumption is achieved. Also, heat generation in a chip is suppressed, and a wide operation range may be obtained even at a low voltage.

摘要翻译： 提供了在SOI衬底上实现的NMOS器件，PMOS器件和SiGe HBT器件及其制造方法。 在制造Si基高速器件时，SiGe HBT和CMOS安装在单个SOI衬底上。 特别地，CMOS的源极和漏极由SiGe和金属形成，因此防止漏电流并实现低功耗。 此外，芯片中的发热被抑制，即使在低电压下也可以获得宽的工作范围。

公开(公告)号：US06940354B2

公开(公告)日：2005-09-06

申请号：US10735037

申请日：2003-12-11

申请人： Dong Min Kang ,  Hyung Sup Yoon ,  Hea Cheon Kim ,  Kyoung Ik Cho

发明人： Dong Min Kang ,  Hyung Sup Yoon ,  Hea Cheon Kim ,  Kyoung Ik Cho

IPC分类号： H03F3/189 ,  H03F3/60 ,  H03F3/68 ,  H03F3/191

CPC分类号： H03F3/605

摘要： A microwave power amplifier comprising a drive amplifying stage includes power elements, gate and drain bias circuits of the power elements, a RC parallel circuit connected between input port and gates of said power elements, a shunt resistor connected between ground terminal and said gates of power elements, and a negative feedback circuit connected in series with resistors and capacitors and in parallel with the power elements. An interstage matching circuit is connected in series with the drive amplifying stage; and a power amplifying stage including power elements connected in parallel with a power divider and a power coupler, gate and drain bias circuits of said power elements, a RC parallel circuit connected between the gates of power elements and the interstage matching circuit, and a shunt resistor connected between a ground and the gates of power elements.

摘要翻译： 包括驱动放大级的微波功率放大器包括功率元件，功率元件的栅极和漏极偏置电路，连接在所述功率元件的输入端口和栅极之间的RC并联电路，连接在接地端子和所述功率门之间的分流电阻器 元件和与电阻器和电容器串联连接并与功率元件并联的负反馈电路。 级间匹配电路与驱动放大级串联; 以及功率放大级，包括与功率分配器和功率耦合器并联连接的功率元件，所述功率元件的栅极和漏极偏置电路，连接在功率元件的栅极和级间匹配电路之间的RC并联电路，以及分流器 电阻连接在地和功率元件的门之间。

公开(公告)号：US06605894B2

公开(公告)日：2003-08-12

申请号：US09871992

申请日：2001-05-31

申请人： Sung Yool Choi ,  Kyoung Ik Cho

发明人： Sung Yool Choi ,  Kyoung Ik Cho

IPC分类号： H01J162

CPC分类号： B82Y10/00 ,  H01J1/304 ,  H01J2201/30469 ,  Y10S977/939

摘要： A field emission device using carbon nanotubes grown in a direction parallel to a substrate and a method of manufacturing a high definition field emission display using an edge emitting luminescent thin film. The device includes a process of selectively depositing a metal catalyst on a sidewall of the pattern to grow the carbon nanotube in a direction parallel to the metal catalyst and a process of attaching the grown carbon nanotube on the main board by application process, so that it can be freely applied in a subsequent process. The device employs a carbon nanotube field emission emitter and an edge emitting in a high fine luminescent body deposited in a thin film type. Thus, a close relationship with the substrate can be maintained due to the horizontally grown carbon nanotubes, a subsequent semiconductor process can be freely applied using a thin film type luminescent body, and a high fine field emission display can be thus manufactured.

公开(公告)号：US06411542B1

公开(公告)日：2002-06-25

申请号：US09966112

申请日：2001-10-01

申请人： Yil Suk Yang ,  Byoung Gon Yu ,  In Kyu You ,  Won Jae Lee ,  Kyoung Ik Cho

发明人： Yil Suk Yang ,  Byoung Gon Yu ,  In Kyu You ,  Won Jae Lee ,  Kyoung Ik Cho

IPC分类号： G11C1122

CPC分类号： G11C11/22

摘要： A ferroelectric memory device including a single ferroelectric transistor that one unit memory cell is independently selected and programmed, when the unit memory cell is programmed for “the first state” or “the second state” by applying a DC bias voltage to the single ferroelectric transistor's gate and well. In addition, the ferroelectric memory device can be applied with normal power level Vdd and GND. The ferroelectric memory device includes a plurality of unit memory cells which are arranged in a matrix, by crossing at least one word line in a column direction with a plurality of bit lines and source lines in a row direction and is connected between the source line and the bit line.

摘要翻译： 当单位存储单元被编程为“第一状态”或“第二状态”时，包括单个存储单元被独立地选择和编程的单个铁电晶体管的铁电存储器件通过将DC偏置电压施加到单个铁电晶体管 门和井。 此外，铁电存储器件可以应用正常的功率电平Vdd和GND。 铁电存储器件包括多个单元存储单元，它们以矩阵形式布置，使列方向上的至少一个字线与行方向上的多个位线和源极线相交，并连接在源极线和 位线。