公开(公告)号：US06605894B2

公开(公告)日：2003-08-12

申请号：US09871992

申请日：2001-05-31

申请人： Sung Yool Choi ,  Kyoung Ik Cho

发明人： Sung Yool Choi ,  Kyoung Ik Cho

IPC分类号： H01J162

CPC分类号： B82Y10/00 ,  H01J1/304 ,  H01J2201/30469 ,  Y10S977/939

摘要： A field emission device using carbon nanotubes grown in a direction parallel to a substrate and a method of manufacturing a high definition field emission display using an edge emitting luminescent thin film. The device includes a process of selectively depositing a metal catalyst on a sidewall of the pattern to grow the carbon nanotube in a direction parallel to the metal catalyst and a process of attaching the grown carbon nanotube on the main board by application process, so that it can be freely applied in a subsequent process. The device employs a carbon nanotube field emission emitter and an edge emitting in a high fine luminescent body deposited in a thin film type. Thus, a close relationship with the substrate can be maintained due to the horizontally grown carbon nanotubes, a subsequent semiconductor process can be freely applied using a thin film type luminescent body, and a high fine field emission display can be thus manufactured.

公开(公告)号：US06204608B1

公开(公告)日：2001-03-20

申请号：US09442486

申请日：1999-11-18

申请人： Yoon Ho Song ,  Jin Ho Lee ,  Seung Youl Kang ,  Sung Yool Choi ,  Kyoung Ik Cho

发明人： Yoon Ho Song ,  Jin Ho Lee ,  Seung Youl Kang ,  Sung Yool Choi ,  Kyoung Ik Cho

IPC分类号： G09G330

CPC分类号： G09G3/22 ,  G09G2300/0842

摘要： A field emission display device is disclosed. The device comprises an upper plate and a lower plate that are vacuum-packaged in parallel, wherein the lower plate is composed of matrix-addressable pixels, wherein the pixel formed on an insulation substrate comprises a field emitter array, a control thin-film transistor having a drain connected to an emitter electrode of the emitter array, and an addressing thin-film transistor having a drain connected to a gate electrode of the control thin-film transistor. Designing the control thin-film transistor to have a large parasitic capacitance between the source and the gate, one can obtain an active matrix display having a memory function and eliminate a conventional complex fabricating process of a memory capacitor, thereby simplify a panel fabricating process remarkably and largely increase the aperture ratio of a pixel. Furthermore, in the present invention, introducing glass for a substrate material instead of conventional single crystal silicon wafer, one can cheaply produce a large size panel and easily carry out a vacuum packaging that is indispensable for fabricating a field emission display.

摘要翻译： 公开了一种场致发射显示装置。 该装置包括平行真空包装的上板和下板，其中下板由可矩阵寻址的像素组成，其中形成在绝缘基板上的像素包括场致发射阵列，控制薄膜晶体管 具有连接到发射极阵列的发射极的漏极，以及具有连接到控制薄膜晶体管的栅电极的漏极的寻址薄膜晶体管。 将控制薄膜晶体管设计成在源极和栅极之间具有大的寄生电容，可以获得具有存储功能的有源矩阵显示器，并消除了存储电容器的常规复杂制造工艺，从而显着地简化了面板制造工艺 并大大提高像素的开口率。 此外，在本发明中，为了代替传统的单晶硅晶片引入用于基板材料的玻璃，可以廉价地生产大尺寸面板，并且容易地实现对于制造场致发射显示器而言不可或缺的真空包装。

公开(公告)号：US08493768B2

公开(公告)日：2013-07-23

申请号：US13300688

申请日：2011-11-21

申请人： Chunwon Byun ,  ByeongHoon Kim ,  Sung Min Yoon ,  Shinhyuk Yang ,  Min Ki Ryu ,  Chi-Sun Hwang ,  Sang-Hee Park ,  Kyoung Ik Cho

发明人： Chunwon Byun ,  ByeongHoon Kim ,  Sung Min Yoon ,  Shinhyuk Yang ,  Min Ki Ryu ,  Chi-Sun Hwang ,  Sang-Hee Park ,  Kyoung Ik Cho

IPC分类号： G11C11/22

CPC分类号： G11C11/22

摘要： Provided is a memory cell including: a ferroelectric transistor; a plurality of switching elements electrically connected to the ferroelectric transistor; and a plurality of control lines for transmitting individual control signals to each of the plurality of switching element for separately controlling the plurality of switching elements. The plurality of switching elements are configured to be separately controlled on the basis of the individual control signals so as to prevent each electrode of the ferroelectric transistor from being floated.

摘要翻译： 提供一种存储单元，包括：铁电晶体管; 电连接到所述铁电晶体管的多个开关元件; 以及多个控制线，用于将各个控制信号发送到多个开关元件中的每一个，用于分别控制多个开关元件。 多个开关元件被配置为基于各个控制信号单独控制，以防止铁电晶体管的每个电极浮动。

公开(公告)号：US08421610B2

公开(公告)日：2013-04-16

申请号：US12534672

申请日：2009-08-03

申请人： Seongdeok Ahn ,  In-Kyu You ,  Jiyoung Oh ,  Chul Am Kim ,  Jae Bon Koo ,  Sang Seok Lee ,  Kyung Soo Suh ,  Kyoung Ik Cho

发明人： Seongdeok Ahn ,  In-Kyu You ,  Jiyoung Oh ,  Chul Am Kim ,  Jae Bon Koo ,  Sang Seok Lee ,  Kyung Soo Suh ,  Kyoung Ik Cho

IPC分类号： G08B6/00

CPC分类号： G06F3/044 ,  G06F3/016 ,  G06F3/045

摘要： Provided are a touch screen and a method of operating the same. The touch screen includes a detecting part, a control part, and a tactile feedback part. The detecting part detects object's approach or contact. The control part receives a signal of the detecting part to output a feedback signal. The tactile feedback part receives the feedback signal of the control part to provide a tactile feedback to a contact position using a magnetic force. The tactile feedback uses the magnetic force of a magnetic dipole.

摘要翻译： 提供一种触摸屏及其操作方法。 触摸屏包括检测部分，控制部分和触觉反馈部分。 检测部件检测物体的接近或接触。 控制部分接收检测部分的信号以输出反馈信号。 触觉反馈部分接收控制部分的反馈信号，以使用磁力向接触位置提供触觉反馈。 触觉反馈使用磁偶极子的磁力。

公开(公告)号：US20120225500A1

公开(公告)日：2012-09-06

申请号：US13469558

申请日：2012-05-11

申请人： Sung Min YOON ,  Shin Hyuk Yang ,  Soon Won Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

发明人： Sung Min YOON ,  Shin Hyuk Yang ,  Soon Won Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

IPC分类号： H01L51/40

CPC分类号： H01L21/28291 ,  H01L29/78391 ,  H01L29/7869

摘要： Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.

摘要翻译： 提供了一种透明非易失性存储器薄膜晶体管（TFT）及其制造方法。 存储TFT包括设置在透明基板上的源极和漏极。 透明半导体薄层设置在源电极和漏电极之间，并且透明基板设置在源极和漏极之间。 有机铁电薄层设置在透明半导体薄层上。 栅电极与透明半导体薄层对准地设置在有机铁电薄层上。 因此，透明非易失性存储器TFT采用有机铁电薄层，氧化物半导体薄层和设置在有机铁电薄层之上和之下的辅助绝缘层，从而能够低成本地制造能够低的透明非易失性存储器件 温度过程。

公开(公告)号：US08198625B2

公开(公告)日：2012-06-12

申请号：US12555986

申请日：2009-09-09

申请人： Sung Min Yoon ,  Shin Hyuk Yang ,  Soon Won Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

发明人： Sung Min Yoon ,  Shin Hyuk Yang ,  Soon Won Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

IPC分类号： H01L35/24

CPC分类号： H01L21/28291 ,  H01L29/78391 ,  H01L29/7869

摘要： Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.

摘要翻译： 提供了一种透明非易失性存储器薄膜晶体管（TFT）及其制造方法。 存储TFT包括设置在透明基板上的源极和漏极。 透明半导体薄层设置在源电极和漏电极之间，并且透明基板设置在源极和漏极之间。 有机铁电薄层设置在透明半导体薄层上。 栅电极与透明半导体薄层对准地设置在有机铁电薄层上。 因此，透明非易失性存储器TFT采用有机铁电薄层，氧化物半导体薄层和设置在有机铁电薄层之上和之下的辅助绝缘层，从而能够低成本地制造能够低的透明非易失性存储器件 温度过程。

公开(公告)号：US20110266542A1

公开(公告)日：2011-11-03

申请号：US13094933

申请日：2011-04-27

申请人： Min Ki RYU ,  Sang Hee Park ,  Chi Sun Hwang ,  Kyoung Ik Cho

发明人： Min Ki RYU ,  Sang Hee Park ,  Chi Sun Hwang ,  Kyoung Ik Cho

IPC分类号： H01L29/04 ,  H01L21/336

CPC分类号： H01L27/124 ,  H01L27/1225 ,  H01L29/78648

摘要： Provided are a semiconductor device including a dual gate transistor and a method of fabricating the same. The semiconductor device includes a lower gate electrode, an upper gate electrode on the lower gate electrode, a contact plug interposed between the lower gate electrode and the upper gate electrode, and connecting the lower gate electrode to the upper gate electrode, and a functional electrode spaced apart from the upper gate electrode and formed at the same height as the upper gate electrode. The dual gate transistor exhibiting high field effect mobility is applied to the semiconductor device, so that characteristics of the semiconductor device can be improved. In particular, since no additional mask or deposition process is necessary, a large-area high-definition semiconductor device can be mass-produced with neither an increase in process cost nor a decrease in yield.

摘要翻译： 提供一种包括双栅晶体管的半导体器件及其制造方法。 半导体器件包括下栅极电极，下栅电极上的上栅电极，插入在下栅电极和上栅电极之间的接触插塞，并将下栅电极连接到上栅电极，功能电极 与上栅电极间隔开并形成与上栅电极相同的高度。 表现出高场效应迁移率的双栅极晶体管被施加到半导体器件，从而可以提高半导体器件的特性。 特别是，由于不需要附加的掩模或沉积工艺，所以大面积的高分辨率半导体器件既可以增加工艺成本也不会降低产量。

公开(公告)号：US20110133257A1

公开(公告)日：2011-06-09

申请号：US12782303

申请日：2010-05-18

申请人： Jae Bon KOO ,  Jong-Hyun Ahn ,  Seung Youl Kang ,  Hasan Musarrat ,  In-Kyu You ,  Kyoung Ik Cho

发明人： Jae Bon KOO ,  Jong-Hyun Ahn ,  Seung Youl Kang ,  Hasan Musarrat ,  In-Kyu You ,  Kyoung Ik Cho

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/1218 ,  H01L29/78603

摘要： Provided are a transferred thin film transistor and a method of manufacturing the same. The method includes: forming a source region and a drain region that extend in a first direction in a first substrate and a channel region between the source region and the drain region; forming trenches that extend in a second direction in the first substrate to define an active layer between the trenches, the second direction intersecting the first direction; separating the active layer between the trenches from the first substrate by performing an anisotropic etching process on the first substrate inside the trenches; attaching the active layer on a second substrate; and forming a gate electrode in the first direction on the channel region of the active layer.

摘要翻译： 提供了一种转移的薄膜晶体管及其制造方法。 该方法包括：形成在第一衬底中沿第一方向延伸的源极区域和漏极区域以及源极区域和漏极区域之间的沟道区域; 形成在所述第一衬底中沿第二方向延伸的沟槽，以在所述沟槽之间限定有源层，所述第二方向与所述第一方向相交; 通过在所述沟槽内的所述第一衬底上进行各向异性蚀刻工艺，从所述第一衬底分离所述沟槽之间的有源层; 将活性层附着在第二基底上; 以及在有源层的沟道区上沿第一方向形成栅电极。

公开(公告)号：US07943995B2

公开(公告)日：2011-05-17

申请号：US12068161

申请日：2008-02-04

申请人： Jin Yeong Kang ,  Seung Yun Lee ,  Kyoung Ik Cho

发明人： Jin Yeong Kang ,  Seung Yun Lee ,  Kyoung Ik Cho

IPC分类号： H01L27/01 ,  H01L27/12 ,  H01L31/0392

CPC分类号： H01L29/66242 ,  H01L21/84 ,  H01L27/1203

摘要： Provided are an NMOS device, a PMOS device and a SiGe HBT device which are implemented on an SOI substrate and a method of fabricating the same. In manufacturing a Si-based high speed device, a SiGe HBT and a CMOS are mounted on a single SOI substrate. In particular, a source and a drain of the CMOS are formed of SiGe and metal, and thus leakage current is prevented and low power consumption is achieved. Also, heat generation in a chip is suppressed, and a wide operation range may be obtained even at a low voltage.

摘要翻译： 提供了在SOI衬底上实现的NMOS器件，PMOS器件和SiGe HBT器件及其制造方法。 在制造Si基高速器件时，SiGe HBT和CMOS安装在单个SOI衬底上。 特别地，CMOS的源极和漏极由SiGe和金属形成，因此防止漏电流并实现低功耗。 此外，芯片中的发热被抑制，即使在低电压下也可以获得宽的工作范围。

公开(公告)号：US06975796B2

公开(公告)日：2005-12-13

申请号：US10749145

申请日：2003-12-31

申请人： Ho Young Kim ,  Eun Soo Nam ,  Kyoung Ik Cho

发明人： Ho Young Kim ,  Eun Soo Nam ,  Kyoung Ik Cho

IPC分类号： G02B26/00 ,  G02B6/34 ,  H01S3/067 ,  H01S3/0941 ,  H01S3/106 ,  H01S3/16 ,  G02B6/26 ,  H01S3/082 ,  H01S3/30

CPC分类号： G02B6/29319 ,  G02B6/02076 ,  G02B6/278 ,  G02B6/29322 ,  H01S3/0675 ,  H01S3/0941 ,  H01S3/106 ,  H01S3/1608

摘要： The present invention relates to a millimeter wave frequency band optical oscillator used for an oscillating frequency signal source of millimeter waves transmitted from a repeater to a wireless subscriber in a millimeter wave wireless subscriber communication system for a next-generation (i.e., 5th generation or less) very high speed wireless internet service, wherein a loop mirror and a pair of optical fiber grating mirrors are used. A wavelength fixed type and a wavelength tunable type optical fiber grating mirrors are connected in a serial manner to constitute a dual laser mode resonator capable of simultaneously oscillating two laser modes, which are appropriate to each wavelength. Therefore, it is possible to obtain a laser light source capable of an extremely high frequency (60 GHz or more) modulation by using beat phenomena between two laser modes.

摘要翻译： 本发明涉及一种毫米波频带光学振荡器，用于在下一代的毫米波无线用户通信系统（即，第5代或更少）中从中继器向无线用户发射的毫米波的振荡频率信号源 ）非常高速的无线互联网服务，其中使用环形镜和一对光纤光栅镜。 波长固定型和波长可调型光纤光栅镜以串联方式连接，构成能够同时振荡两种激光模式的双激光模式谐振器，这两种激光模式适合于每种波长。 因此，可以通过使用两种激光模式之间的拍子现象来获得能够进行极高频率（60GHz以上）调制的激光光源。