公开(公告)号：US11522112B2

公开(公告)日：2022-12-06

申请号：US16777796

申请日：2020-01-30

申请人： Lextar Electronics Corporation ,  ULTRA DISPLAY TECHNOLOGY CO., LTD.

发明人： Shiou-Yi Kuo ,  Jian-Chin Liang ,  Shen-De Chen

IPC分类号： H01L33/00 ,  H01L33/62

摘要： A light emitting diode includes an active layer, a first type semiconductor layer, a second type semiconductor layer, a coupling layer, and a sacrificial thin film. The first type semiconductor layer and the second type semiconductor layer are disposed at opposite sides of the active layer. The coupling layer is disposed on the second type semiconductor layer. The sacrificial thin film is disposed on the coupling layer, in which the coupling layer is disposed between the sacrificial thin film and the second type semiconductor layer, and the sacrificial thin film has a thickness less than a total thickness of the first type semiconductor layer, the active layer, the second type semiconductor layer and the coupling layer.

公开(公告)号：US11038088B2

公开(公告)日：2021-06-15

申请号：US16600577

申请日：2019-10-14

申请人： Lextar Electronics Corporation

发明人： Te-Chung Wang ,  Shiou-Yi Kuo

IPC分类号： H01L33/56 ,  H01L27/15 ,  H01L33/48 ,  H01L33/54 ,  H01L33/62 ,  H01L33/52 ,  H01L29/06 ,  H01L21/02

摘要： A light emitting diode (LED) package includes a substrate, at least one micro LED chip, a black material layer, and a transparent material layer. The substrate has a width ranging from 100 micrometers to 1000 micrometers. The at least one micro LED chip is electrically mounted on a top surface of the substrate and has a width ranging from 1 micrometer to 100 micrometers. The black material layer covers the top surface of the substrate to expose the at least one micro LED chip. The transparent material layer covers the at least one micro LED chip and the black material layer.

公开(公告)号：US10573683B2

公开(公告)日：2020-02-25

申请号：US16046990

申请日：2018-07-26

申请人： Lextar Electronics Corporation

发明人： Shiou-Yi Kuo

IPC分类号： H01L27/15 ,  H01L23/62 ,  H01L33/06 ,  H01L33/38 ,  H01L25/16 ,  H01L33/60

摘要： A light-emitting diode (LED) chip includes a substrate, a conductive layer, a first insulator layer, a light-emitting component, and an ESD protection component. The conductive layer is disposed on the substrate. The first insulator layer is disposed on the conductive layer and has a first opening and a second opening. The light-emitting component is disposed on the first insulator layer and includes a first semiconductor layer, a first quantum well layer, and a second semiconductor layer. The ESD protection component is disposed on the first insulator layer and separated from the light-emitting component. The ESD protection component includes a third semiconductor layer, a second quantum well layer, and a fourth semiconductor layer. The second quantum well layer is disposed between the third and fourth semiconductor layers. The first and fourth semiconductor layers are electrically isolated from each other before packaging the LED chip.

公开(公告)号：US10211598B2

公开(公告)日：2019-02-19

申请号：US15638356

申请日：2017-06-29

申请人： Lextar Electronics Corporation

发明人： Te-Chung Wang ,  Shiou-Yi Kuo ,  Jun-Rong Chen

IPC分类号： H01S5/32 ,  H01L33/60 ,  H01S5/042 ,  H01S5/18 ,  H01S5/20

摘要： A side-view light emitting laser element includes a support substrate, a first electrode layer, a second electrode layer, and a light emitting multilayer unit sandwiched between the first electrode layer and the second electrode layer. The first electrode layer is disposed on the support substrate. The second electrode layer is disposed on the first electrode layer. The light emitting multilayer unit includes a first semiconductor layer, a second semiconductor layer and an activating layer sandwiched between the first semiconductor layer and the second semiconductor layer. A first refractive index of the first electrode layer and a second refractive index of the second electrode layer are between 1 and 0, respectively.

公开(公告)号：US09773944B2

公开(公告)日：2017-09-26

申请号：US14290974

申请日：2014-05-29

申请人： Lextar Electronics Corporation

发明人： Shiou-Yi Kuo

IPC分类号： H01L33/10 ,  H01L33/38 ,  H01L33/14 ,  H01L33/32 ,  H01L33/44

CPC分类号： H01L33/10 ,  H01L33/145 ,  H01L33/32 ,  H01L33/38 ,  H01L33/44

摘要： The disclosure provides a light-emitting diode which includes a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a reflective layer, a current blocking layer and a current spreading layer. The light-emitting layer is positioned on the first semiconductor layer, and the second semiconductor layer is positioned on the light-emitting layer. The reflective layer is positioned on a part of the second semiconductor layer, so as to expose another part of the second semiconductor layer. The current blocking layer covers the reflective layer, and the current spreading layer covers the exposed second semiconductor layer and current blocking layer.

公开(公告)号：US20170155018A1

公开(公告)日：2017-06-01

申请号：US15293403

申请日：2016-10-14

申请人： Lextar Electronics Corporation

发明人： Shiou-Yi Kuo ,  Chao-Hsien Lin ,  Ya-Ru Yang

IPC分类号： H01L33/46 ,  H01L33/54 ,  H01L33/32 ,  H01L33/50 ,  H01L33/62 ,  H01L33/60 ,  H01L33/38

CPC分类号： H01L33/46 ,  H01L33/32 ,  H01L33/382 ,  H01L33/505 ,  H01L33/54 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/16245

摘要： A semiconductor light-emitting structure and a semiconductor package structure thereof are provided. The semiconductor light-emitting structure includes a first-type semiconductor layer, an active layer, a second-type semiconductor layer, a metal layer and a distributed Bragg reflector. The active layer is disposed on the first-type semiconductor layer. The second-type semiconductor layer is disposed on the active layer. The metal layer is disposed on the second-type semiconductor layer as a first reflective structure, wherein the metal layer has an opening portion. The distributed Bragg reflector is disposed on the metal layer and interposed into the opening portion as a second reflective structure. The first reflective structure and the second reflective structure form a reflective surface on the second-type semiconductor layer.