公开(公告)号：US20050211670A1

公开(公告)日：2005-09-29

申请号：US10501987

申请日：2003-01-28

申请人： Lee Chen

发明人： Lee Chen

IPC分类号： C23F1/00 ,  C23F4/00 ,  H01L21/00 ,  H01L21/3213

CPC分类号： H01L21/67069 ,  C23F4/00 ,  H01J37/32082 ,  H01L21/32136

摘要： An apparatus and method are described for etching Ni-containing films using gas phase plasma etching. Etching of Ti—Ni alloys is carried out by exposure to plasma comprising hydrogen halide (HX) and carbonyl etching gases. The Ti in the Ti—Ni alloy is etched via an ion-assisted reaction with HX and the Ni is etched by reacting with CO. The method is particularly well suited for anisotropic etching of Ti—Ni metal gates for CMOS applications. Etching of Ni—Fe layers is carried out by exposure to plasma comprising a carbonyl etching gas.

摘要翻译： 描述了使用气相等离子体蚀刻来蚀刻含Ni膜的装置和方法。 通过暴露于包含卤化氢（HX）和羰基蚀刻气体的等离子体进行Ti-Ni合金的蚀刻。 通过与HX的离子辅助反应对Ti-Ni合金中的Ti进行蚀刻，并通过与CO反应蚀刻Ni，该方法特别适用于CMOS应用的Ti-Ni金属栅极的各向异性蚀刻。 通过暴露于包含羰基蚀刻气体的等离子体来进行Ni-Fe层的蚀刻。

公开(公告)号：US5286331A

公开(公告)日：1994-02-15

申请号：US786448

申请日：1991-11-01

申请人： Lee Chen ,  Shwu-Jen Jeng ,  Wesley C. Natzle ,  Chienfan Yu

发明人： Lee Chen ,  Shwu-Jen Jeng ,  Wesley C. Natzle ,  Chienfan Yu

IPC分类号： C23F4/02 ,  C23F4/00 ,  H01L21/302 ,  H01L21/311 ,  H01L21/00

CPC分类号： H01L21/31116 ,  C23F4/00

摘要： In supersonic molecular beam etching, the reactivity of the etchant gas and substrate surface is improved by creating etchant gas molecules with high internal energies through chemical reactions of precursor molecules, forming clusters of etchant gas molecules in a reaction chamber, expanding the etchant gas molecules and clusters of etchant gas molecules through a nozzle into a vacuum, and directing the molecules and clusters of molecules onto a substrate. Translational energy of the molecules and clusters of molecules can be improved by seeding with inert gas molecules. The process provides improved controllability, surface purity, etch selectivity and anisotropy. Etchant molecules may also be expanded directly (without reaction in a chamber) to produce clusters whose translational energy can be increased through expansion with a seeding gas.

摘要翻译： 在超音速分子束蚀刻中，蚀刻剂气体和衬底表面的反应性通过通过前体分子的化学反应产生具有高内能的蚀刻剂气体分子来改善，在反应室中形成蚀刻剂气体分子簇，使蚀刻剂气体分子膨胀， 蚀刻剂气体分子的簇通过喷嘴进入真空，并将分子和分子簇引导到基底上。 可以通过用惰性气体分子进行接种来改善分子和分子团簇的平移能。 该方法提供改进的可控性，表面纯度，蚀刻选择性和各向异性。 蚀刻剂分子也可以直接扩增（在室中没有反应）以产生其平移能量可以通过用接种气体膨胀而增加的簇。

公开(公告)号：US4741799A

公开(公告)日：1988-05-03

申请号：US931909

申请日：1986-11-17

申请人： Lee Chen ,  Gangadhara S. Mathad

发明人： Lee Chen ,  Gangadhara S. Mathad

IPC分类号： H01L21/3065 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： H01L21/3065

摘要： A method of high rate anisotropic etching of silicon in a high pressure plasma is described. In one embodiment the etching ambient is a mixture of either NF.sub.3 or SF.sub.6, an inert gas such as nitrogen, and a polymerizing gas such as CHF.sub.3 that creates conditions necessary for anisotropy not normally possible with nonpolymerizing fluorinated gases in a high pressure regime. The etch process is characterized by high etch rates and good uniformity utilizing photoresist or similar materials as a mask. The present process may advantageously be used to etch deep trenches in silicon using a photoresist mask.

摘要翻译： 描述了高压等离子体中硅的高速各向异性蚀刻的方法。 在一个实施方案中，蚀刻环境是NF 3或SF 6，惰性气体如氮气和诸如CHF 3的聚合气体的混合物，其产生通常在高压状态下非聚合氟化气体通常不可能的各向异性所需的条件。 蚀刻工艺的特征在于利用光致抗蚀剂或类似材料作为掩模的高蚀刻速率和良好的均匀性。 本方法可有利地用于使用光致抗蚀剂掩模来蚀刻硅中的深沟槽。

公开(公告)号：US4493745A

公开(公告)日：1985-01-15

申请号：US575611

申请日：1984-01-31

申请人： Lee Chen ,  Henri A. Khoury ,  Harlan R. Seymour

发明人： Lee Chen ,  Henri A. Khoury ,  Harlan R. Seymour

IPC分类号： H01L21/302 ,  C23F4/00 ,  H01J37/32 ,  H01L21/3065 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： H01J37/32935 ,  C23F4/00

摘要： A method for etching a batch of semiconductor wafers to end point using optical emission spectroscopy is described. The method is applicable to any form of dry plasma etching which produces an emission species capable of being monitored. In a preferred embodiment, as well as a first alternative embodiment, a computer simulation is performed using an algorithm describing the concentration of the monitored etch species within the etching chamber as a function of time. The simulation produces a time period for continuing the etching process past a detected time while monitoring the intensity of emission of the etch species. In a second alternative embodiment, this latter time period is calculated using mathematical distributions describing the parameters of the etching process. In all three embodiments, the actual time that end point of an etching process is reached is closely approximated. In this manner, all wafers in a batch of wafers being etched reach end point while at the same time, the amount of over etching is greatly minimized.

摘要翻译： 描述了使用光发射光谱法将一批半导体晶片蚀刻到终点的方法。 该方法适用于产生能够被监测的发射物质的任何形式的干等离子体蚀刻。 在优选实施例中，以及第一替代实施例，使用描述作为时间的函数的蚀刻室内监测的蚀刻物质的浓度的算法来执行计算机模拟。 模拟产生一个时间段，用于在监测蚀刻物质的发射强度的同时，在检测到的时间内继续蚀刻工艺。 在第二替代实施例中，使用描述蚀刻工艺的参数的数学分布来计算后一时间段。 在所有三个实施例中，达到蚀刻工艺的终点的实际时间是非常接近的。 以这种方式，一批待蚀刻的晶片中的所有晶片都到达终点，而同时过度蚀刻的量大大减至最小。

公开(公告)号：US4478677A

公开(公告)日：1984-10-23

申请号：US564524

申请日：1983-12-22

申请人： Lee Chen ,  Tung J. Chuang ,  Gangadhara S. Mathad

发明人： Lee Chen ,  Tung J. Chuang ,  Gangadhara S. Mathad

IPC分类号： B23K26/06 ,  C03C23/00 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： C03C23/0025 ,  B23K26/066 ,  B23K2201/40

摘要： Disclosed is an apparatus and method for etching a glass substrate by laser induced dry etching. The apparatus features a housing including a vacuum chamber for receiving the substrate; a vacuum pump coupled to the chamber for evacuating the chamber; a gas source coupled to the chamber for supplying a halogen base gas which is capable of wetting the substrate surface and forming a glass etching specie when activated; a laser source for transmitting a light beam of predetermined wavelength and intensity through the gas; and a mask optically coupled to the laser source for patterning the light beam and also coupled to the chamber so that the light patterned by the mask may fall upon the substrate causing excitation thereof and activation of an etch specie for etching the substrate in conformity with the patterned light.The disclosed method comprises the steps of loading the substrate into a vacuum chamber; evacuating the chamber to a low pressure; controllably introducing a halogen base gas into the chamber to wet substrate surface layer to be etched; and introducing a patterned light beam of predetermined wavelength and intensity through the gas onto the surface layer causing excitation thereof and activation of an etch specie for etching the substrate in conformity with the patterned light.The laser light may be of the pulse type and of 10.6 microns wavelength in case of a CO.sub.2 laser or 249 nanometer or 193 nanometer wavelength in case of an eximer laser.

摘要翻译： 公开了一种通过激光干蚀刻蚀刻玻璃基板的装置和方法。 该装置具有包括用于接收基板的真空室的壳体; 联接到所述室的真空泵，用于抽空所述室; 耦合到所述室的气源，用于供应卤素基础气体，其能够润湿所述衬底表面并在被激活时形成玻璃蚀刻物质; 用于透过气体传输预定波长和强度的光束的激光源; 以及与激光源光学耦合以用于图案化光束并且还耦合到腔室的掩模，使得由掩模图案化的光可能落在基板上，引起其激发，并激活用于蚀刻基板的蚀刻种类 图案光。 所公开的方法包括将基板装载到真空室中的步骤; 将室抽空至低压; 可控地将卤素基础气体引入室内以湿式待蚀刻的基底表面层; 并将预定波长和强度的图案化光束通过气体引入到表面层上，引起其激发，并激活用于根据图案化光蚀刻衬底的蚀刻物质。 在二氧化碳激光器的情况下，激光可以是脉冲型，波长为10.6微米，激光的情况下为249纳米或193纳米。

公开(公告)号：US09960967B2

公开(公告)日：2018-05-01

申请号：US12603471

申请日：2009-10-21

申请人： Lee Chen ,  John Chiong

发明人： Lee Chen ,  John Chiong

IPC分类号： H04L12/24 ,  H04L29/12 ,  H04L29/08

CPC分类号： H04L41/12 ,  H04L29/12066 ,  H04L61/1511 ,  H04L67/1002 ,  H04L67/1021 ,  H04L67/1036

摘要： A method and system to determine a web server based on geo-location information is disclosed. The system includes: a local DNS server coupled to a web client; a plurality of web servers; and a global load balancer coupled to the local DNS server. The global load balancer: receives a request for a web service sent by the web client, the request comprising local DNS server information; determines a geographic location for the local DNS server based on the local DNS server information; determines a web server from the plurality of web servers based on the requested web service; determines a geographic location for the determined web server; determines that the geographic location for the local DNS server matches the geographic location for the determined web server; selects the determined web server; and sends a response comprising information on the selected web server to the local DNS server.

公开(公告)号：US09219751B1

公开(公告)日：2015-12-22

申请号：US13943642

申请日：2013-07-16

申请人： Lee Chen ,  John Chiong ,  Dennis Oshiba

发明人： Lee Chen ,  John Chiong ,  Dennis Oshiba

IPC分类号： H04L29/06 ,  H04L29/08 ,  H04L12/58 ,  H04M1/725 ,  G06F21/00

CPC分类号： H04L63/0263 ,  G06F21/00 ,  G06F21/44 ,  H04L12/66 ,  H04L51/04 ,  H04L63/02 ,  H04L63/0227 ,  H04L63/0236 ,  H04L63/0245 ,  H04L63/0254 ,  H04L63/029 ,  H04L63/0407 ,  H04L63/08 ,  H04L63/10 ,  H04L63/102 ,  H04L63/105 ,  H04L63/164 ,  H04L63/168 ,  H04L63/20 ,  H04L63/30 ,  H04L65/1026 ,  H04L67/10 ,  H04L67/1004 ,  H04L67/104 ,  H04L67/141 ,  H04L67/22 ,  H04L67/306 ,  H04L67/42 ,  H04L69/28 ,  H04L69/329 ,  H04M1/72547 ,  H04W12/00

摘要： Method for applying a security policy to an application session, includes: recognizing the application session between a network and an application via a security gateway; determining by the security gateway a user identity of the application session using information about the application session; obtaining by the security gateway the security policy comprising network parameters mapped to the user identity; and applying the security policy to the application session by the security gateway. The user identity may be a network user identity or an application user identity recognized from packets of the application session. The security policy may comprise a network traffic policy mapped and/or a document access policy mapped to the user identity, where the network traffic policy is applied to the application session. The security gateway may further generate a security report concerning the application of the security policy to the application session.

摘要翻译： 将安全策略应用于应用会话的方法包括：通过安全网关识别网络与应用之间的应用会话; 使用关于应用会话的信息由安全网关确定应用会话的用户身份; 由安全网关获取包括映射到用户身份的网络参数的安全策略; 并将安全策略应用于安全网关的应用会话。 用户身份可以是从应用会话的分组识别的网络用户身份或应用用户身份。 安全策略可以包括被映射的网络流量策略和/或映射到用户身份的文档访问策略，其中将网络流量策略应用于应用会话。 安全网关还可以生成关于安全策略应用于应用会话的安全报告。

公开(公告)号：US09215275B2

公开(公告)日：2015-12-15

申请号：US12894142

申请日：2010-09-30

申请人： Lalgudi Narayanan Kannan ,  Ronald Wai Lun Szeto ,  Lee Chen ,  Feilong Xu ,  Rajkumar Jalan

发明人： Lalgudi Narayanan Kannan ,  Ronald Wai Lun Szeto ,  Lee Chen ,  Feilong Xu ,  Rajkumar Jalan

IPC分类号： G06F15/16 ,  H04L29/08

CPC分类号： H04L67/1008 ,  H04L67/02 ,  H04L67/1002

摘要： A method, system, and computer program product for balancing servers based on server load status, include: receiving from a server a service response to a service request, the service response including a result from a processing of the service request and a server status indicating a computing load status of the server; obtaining the server status from the service response; receiving a next service request from a host, the next service request comprising a Uniform Resource Locator (URL); determining that the server is configured to process the URL; determining whether the server status indicates that the server is available to process the next service request; and in response to determining that the server status indicates that the server is available to process the next service request, sending the next service request to the server.

摘要翻译： 一种用于基于服务器负载状态平衡服务器的方法，系统和计算机程序产品，包括：从服务器接收对服务请求的服务响应，所述服务响应包括来自所述服务请求的处理的结果和指示 服务器的计算负载状态; 从服务响应获取服务器状态; 从主机接收下一服务请求，所述下一服务请求包括统一资源定位符（URL）; 确定服务器被配置为处理URL; 确定服务器状态是否指示服务器可用于处理下一个服务请求; 并且响应于确定服务器状态指示服务器可用于处理下一服务请求，将下一服务请求发送到服务器。

公开(公告)号：US08847159B2

公开(公告)日：2014-09-30

申请号：US13433071

申请日：2012-03-28

申请人： Lee Chen ,  Barton Lane ,  Merritt Funk ,  Jianping Zhao ,  Radha Sundararajan

发明人： Lee Chen ,  Barton Lane ,  Merritt Funk ,  Jianping Zhao ,  Radha Sundararajan

IPC分类号： G01T1/185 ,  H01J49/48 ,  H01J37/32 ,  H05H1/00

CPC分类号： H01J37/32935 ,  H01J49/488 ,  H05H1/0081 ,  Y10T29/49002

摘要： An ion energy analyzer for determining an ion energy distribution of a plasma and comprising an entrance grid, a selection grid, and an ion collector. The entrance grid includes a first plurality of openings dimensioned to be less than a Debye length for the plasma. The ion collector is coupled to the entrance grid via a first voltage source. The selection grid is positioned between the entrance grid and the ion collector and is coupled to the entrance grid via a second voltage source. An ion current meter is coupled to the ion collector to measure an ion flux onto the ion collector and transmit a signal related thereto.

摘要翻译： 一种用于确定等离子体的离子能量分布并包括入口格栅，选择栅格和离子收集器的离子能量分析器。 入口格栅包括尺寸小于等离子体的德拜长度的第一多个开口。 离子收集器通过第一电压源耦合到入口电网。 选择网格位于入口格栅和离子收集器之间，并通过第二电压源耦合到入口格栅。 离子电流计耦合到离子收集器以测量离子收集器上的离子通量并传输与其相关的信号。

公开(公告)号：US08782751B2

公开(公告)日：2014-07-15

申请号：US13423953

申请日：2012-03-19

申请人： Lee Chen ,  John Chiong ,  Yang Yu

发明人： Lee Chen ,  John Chiong ,  Yang Yu

IPC分类号： G06F21/57

CPC分类号： H04L63/08 ,  G11C7/24 ,  H04L63/107 ,  H04W12/06 ,  H04W12/08

摘要： Systems and methods of authenticating user access based on an access point to a secure data network include a secure data network having a plurality of a network access points serving as entry points for a user to access the secure data network using a user device. The user is associated with a user identity, each network access point with a network access point identity. The user uses a user device to send an access request, requesting access to the secure data network, to the network access point, which then sends an authentication request to an identity server. The identity server processes the authentication request, by validating the combination of the user identity and the network access point identity, and responds with an authentication response, granting or denying access, as communicated to the user device via an access response.

摘要翻译： 基于对安全数据网络的接入点认证用户接入的系统和方法包括具有多个网络接入点的安全数据网络，该网络接入点用作用户使用用户设备访问安全数据网络的入口点。 用户与用户身份相关联，每个网络接入点具有网络接入点身份。 用户使用用户设备向网络接入点发送访问安全数据网络的访问请求，网络接入点然后向认证服务器发送认证请求。 身份服务器通过验证用户身份和网络接入点身份的组合来处理身份验证请求，并通过访问响应传达给用户设备的认证响应，授予或拒绝访问进行响应。