Inks for display device manufacturing and methods of manufacturing and using the same
    31.
    发明申请
    Inks for display device manufacturing and methods of manufacturing and using the same 审中-公开
    用于显示装置制造的油墨及其制造和使用方法

    公开(公告)号:US20080022885A1

    公开(公告)日:2008-01-31

    申请号:US11494286

    申请日:2006-07-27

    申请人: Lizhong Sun

    发明人: Lizhong Sun

    IPC分类号: C09K3/18

    摘要: An ink composition is provided for display device manufacturing via ink jetting. The ink includes (1) a first solvent having a first evaporation rate of about 0 to about 0.353; and (2) a second solvent having a second, different evaporation rate of about 0 to about 0.353 combined with the first solvent. Numerous other aspects are provided.

    摘要翻译: 提供了用于通过喷墨的显示装置制造的油墨组合物。 油墨包括(1)第一蒸发速率为约0至约0.353的第一溶剂; 和(2)具有与第一溶剂组合的约0至约0.353的第二不同蒸发速率的第二溶剂。 提供了许多其他方面。

    Methods for reducing delamination during chemical mechanical polishing
    32.
    发明授权
    Methods for reducing delamination during chemical mechanical polishing 失效
    在化学机械抛光过程中减少分层的方法

    公开(公告)号:US07244168B2

    公开(公告)日:2007-07-17

    申请号:US11393278

    申请日:2006-03-30

    IPC分类号: B24B49/00 B24B1/00

    摘要: Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material form thereon in a polishing apparatus having a rotational carrier head and a rotatable platen, wherein the substrate is disposed in the rotational carrier head and the platen has a polishing article disposed thereon, rotating the first carrier head at a first carrier head rotational rate and rotating a platen at a first platen rotational rate, contacting the substrate and the polishing article, accelerating the first carrier head rotational rate to a second carrier head rotational rate and accelerating the first platen rotational rate to a second platen rotational rate, and polishing the substrate at the second carrier head rotational rate and at the second platen rotational rate.

    摘要翻译: 提供了用于抛光衬底的方法和装置,其包括具有降低或最小衬底表面损伤和分层的导电和低k电介质材料。 一方面,提供了一种处理衬底的方法,包括在具有旋转载体头和可旋转压板的抛光装置中定位其上具有导电材料的衬底,其中衬底设置在旋转载体头部中,并且压板具有 设置在其上的抛光制品,以第一载体头旋转速率旋转第一载体头并以第一压板旋转速率旋转压板,使基板和抛光制品接触,将第一载体头旋转速率加速到第二载体头旋转 速度并将第一压板转速加速到第二压板旋转速率,并以第二承载头转速和第二压板旋转速率抛光衬底。

    Red printing ink for color filter applications
    33.
    发明申请
    Red printing ink for color filter applications 审中-公开
    用于滤色镜应用的红色油墨

    公开(公告)号:US20070015847A1

    公开(公告)日:2007-01-18

    申请号:US11182501

    申请日:2005-07-15

    IPC分类号: C03C17/00

    CPC分类号: C09D11/322

    摘要: Red inks for displays are provided. In one aspect, the red inks include one or more red organic pigments, one or more monomers, one or more polymeric dispersants, and one or more organic solvents. In another aspect, the red inks include one or more red organic pigments, one or more yellow pigments, one or more monomers, one or more oligomers, one or more polymeric dispersants, and one or more organic solvents. Methods of forming displays that include dispensing the red inks by inkjetting onto a substrate and displays that include the red inks are also provided.

    摘要翻译: 提供了用于显示器的红色油墨。 一方面,红色油墨包括一种或多种红色有机颜料,一种或多种单体,一种或多种聚合物分散剂和一种或多种有机溶剂。 另一方面,红色油墨包括一种或多种红色有机颜料,一种或多种黄色颜料,一种或多种单体,一种或多种低聚物,一种或多种聚合物分散剂和一种或多种有机溶剂。 形成显示器的方法包括通过喷墨到基板上分配红色油墨并且还提供包括红色油墨的显示器。

    Methods for reducing delamination during chemical mechanical polishing

    公开(公告)号:US20060172664A1

    公开(公告)日:2006-08-03

    申请号:US11393278

    申请日:2006-03-30

    IPC分类号: B24B51/00 B24B7/30 B24B1/00

    摘要: Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material form thereon in a polishing apparatus having a rotational carrier head and a rotatable platen, wherein the substrate is disposed in the rotational carrier head and the platen has a polishing article disposed thereon, rotating the first carrier head at a first carrier head rotational rate and rotating a platen at a first platen rotational rate, contacting the substrate and the polishing article, accelerating the first carrier head rotational rate to a second carrier head rotational rate and accelerating the first platen rotational rate to a second platen rotational rate, and polishing the substrate at the second carrier head rotational rate and at the second platen rotational rate.

    Method and composition for the removal of residual materials during substrate planarization

    公开(公告)号:US07022608B2

    公开(公告)日:2006-04-04

    申请号:US10419440

    申请日:2003-04-21

    IPC分类号: H01L21/302

    CPC分类号: C09G1/02

    摘要: A method, composition, and computer readable medium for planarizing a substrate. In one aspect, the composition includes one or more chelating agents and ions of at least one transition metal, one or more surfactants, one or more oxidizers, one or more corrosion inhibitors, and deionized water. The composition may further comprise one or more agents to adjust the pH and/or abrasive particles. The method comprises planarizing a substrate using a composition including one or more chelating agents and ions of at least one transition metal. In one aspect, the method comprises processing a substrate disposed on a polishing pad including performing a first polishing process to substantially remove the copper containing material, performing a second polishing process to remove residual copper containing material, the second polishing process comprising delivering a CMP composition to the polishing pad, mixing one or more chelating agents and ions of at least one transition metal in situ with the CMP composition, and removing residual copper containing materials from the substrate surface. The invention also provides a computer readable medium bearing instructions for planarizing a substrate surface, the instructions arranged, when executed by one or more processors, to cause one or more processors to control a system to perform polishing the substrate to substantially remove copper containing material formed thereon and polishing the substrate with a CMP composition comprising one or more chelating agents and ions of at least one transition metal to remove residual copper containing material.

    Tantalum removal during chemical mechanical polishing

    公开(公告)号:US07012025B2

    公开(公告)日:2006-03-14

    申请号:US09755717

    申请日:2001-01-05

    IPC分类号: H01L21/302

    CPC分类号: H01L21/3212 C09G1/02

    摘要: The invention relates generally to a composition and a method for selective removal of a barrier layer in chemical mechanical polishing. In one aspect, the composition for selective removal of a barrier layer includes at least one reducing agent, ions from at least one transitional metal, and water. The composition may further include at least one buffer for pH stability, at least one pH adjusting agent for providing an initial pH, a corrosion inhibitor, abrasive particles, and/or a metal chelating agent. In another embodiment, the invention relates generally to a composition and a method for removal of a conductive material layer and a barrier layer in chemical mechanical polishing. In one aspect, the method for removal of a conductive material layer and a barrier layer includes applying a conductive-material-layer-selective composition to a polishing pad, polishing the substrate in presence of the conductive-material-layer-selective composition, applying a barrier-layer-selective composition to a polishing pad, and polishing the substrate in presence of the barrier-layer-selective composition.

    Control of removal profile in electrochemically assisted CMP
    38.
    发明授权
    Control of removal profile in electrochemically assisted CMP 失效
    电化学辅助CMP中去除曲线的控制

    公开(公告)号:US06991526B2

    公开(公告)日:2006-01-31

    申请号:US10244697

    申请日:2002-09-16

    IPC分类号: B24B1/00 C25F7/00

    CPC分类号: B24B37/042 B23H5/08

    摘要: Aspects of the invention generally provide a method and apparatus for polishing a substrate using electrochemical deposition techniques. In one aspect, an apparatus for polishing a substrate comprises a counter-electrode and a pad positioned between a substrate and the counter-electrode and a pad positioned between a substrate and the counter-electrode. A dielectric insert is positioned between the counter-electrode and the substrate. The dielectric insert has a plurality of zones, each zone permitting a separate current density between the counter-electrode and the substrate. In another embodiment, an apparatus for polishing a substrate that include a conductive layer comprises a counter-electrode to the material layer. The counter-electrode comprises a plurality of electrically isolated conductive elements. An electrical connector is separately coupled to each of the conductive elements.

    摘要翻译: 本发明的各方面通常提供使用电化学沉积技术来抛光衬底的方法和装置。 一方面,用于研磨衬底的装置包括对电极和位于衬底和对电极之间的衬垫以及位于衬底和对电极之间的衬垫。 电介质插入件位于对电极和衬底之间。 电介质插入件具有多个区域,每个区域允许在对电极和衬底之间分开的电流密度。 在另一个实施例中,用于抛光包括导电层的衬底的装置包括与材料层相对的对电极。 对电极包括多个电绝缘的导电元件。 电连接器分别耦合到每个导电元件。

    Method and apparatus for face-up substrate polishing
    39.
    发明授权
    Method and apparatus for face-up substrate polishing 失效
    面朝上衬底抛光的方法和装置

    公开(公告)号:US06776693B2

    公开(公告)日:2004-08-17

    申请号:US10163796

    申请日:2002-06-04

    IPC分类号: B24B100

    摘要: A method and apparatus are provided for polishing a substrate surface. In one aspect, an apparatus for polishing a substrate includes a basin and a polishing head. A carrier is disposed in the basin and has a substrate supporting surface. A retaining ring is disposed on the carrier and at least partially circumscribes the substrate supporting surface. The polishing head is supported above the basin and includes a conductive polishing pad. Embodiments may further include a vent to allow gas to escape through the polishing head. Embodiments may further include an electrolyte supply that flows electrolyte into the polishing head and out through a permeable electrode and the conductive pad to the substrate. Embodiments may also be configured with a polishing head diameter smaller than the substrate supported by the carrier.

    摘要翻译: 提供了一种用于抛光衬底表面的方法和装置。 一方面,用于抛光衬底的装置包括盆和抛光头。 载体布置在盆中并具有基底支撑表面。 保持环设置在载体上并且至少部分地限定基板支撑表面。 抛光头支撑在盆面上方,并包括导电抛光垫。 实施例还可包括通气孔,以允许气体通过抛光头逸出。 实施例还可以包括将电解质流入抛光头并通过可渗透电极流出并将导电垫流到基底的电解质供应。 实施例还可以被配置为具有小于由载体支撑的基板的抛光头直径。

    Advanced electrolytic polish (AEP) assisted metal wafer planarization method and apparatus
    40.
    发明授权
    Advanced electrolytic polish (AEP) assisted metal wafer planarization method and apparatus 失效
    先进的电解抛光(AEP)辅助金属晶圆平面化方法和装置

    公开(公告)号:US06299741B1

    公开(公告)日:2001-10-09

    申请号:US09450858

    申请日:1999-11-29

    IPC分类号: C25D1700

    CPC分类号: H01L21/3212 H01L21/32115

    摘要: In advanced electrolytic polish (AEP) method, a metal wafer (10) acts as an anodic electrodes and another metal plate (65) is used as a cathodic electrode. A voltage differential is applied to the anode and cathode under a predetermined anodic dissolution current density. This causes a reaction that provides a planarized surface on the metal wafers. Additives are included in the electrolyte solution (55) which adsorb onto the wafer surface urging a higher removal rate at higher spots and a lower removal rate at lower spots. Also, in another embodiment of the present invention is a pulsed-electrolytic process (260) in which positive and negative potentials are applied to the anodic and cathodic electrodes alternately, further encouraging surface planarization.

    摘要翻译: 在高级电解抛光(AEP)方法中,金属晶片(10)用作阳极电极,另一金属板(65)用作阴极电极。 在预定的阳极溶解电流密度下,对阳极和阴极施加电压差。 这导致在金属晶片上提供平坦化表面的反应。 添加剂被包括在吸附在晶片表面上的电解质溶液(55)中,促使较高点处的更高的去除率和较低的去除率降低。 此外,在本发明的另一实施例中,脉冲电解方法(260)其中正电位和负电位交替地施加到阳极和阴极电极,进一步促进了表面平坦化。