公开(公告)号：US06299741B1

公开(公告)日：2001-10-09

申请号：US09450858

申请日：1999-11-29

申请人： Lizhong Sun ,  Stan Tsai ,  Fritz Redeker

发明人： Lizhong Sun ,  Stan Tsai ,  Fritz Redeker

IPC分类号： C25D1700

CPC分类号： H01L21/3212 ,  H01L21/32115

摘要： In advanced electrolytic polish (AEP) method, a metal wafer (10) acts as an anodic electrodes and another metal plate (65) is used as a cathodic electrode. A voltage differential is applied to the anode and cathode under a predetermined anodic dissolution current density. This causes a reaction that provides a planarized surface on the metal wafers. Additives are included in the electrolyte solution (55) which adsorb onto the wafer surface urging a higher removal rate at higher spots and a lower removal rate at lower spots. Also, in another embodiment of the present invention is a pulsed-electrolytic process (260) in which positive and negative potentials are applied to the anodic and cathodic electrodes alternately, further encouraging surface planarization.

摘要翻译： 在高级电解抛光（AEP）方法中，金属晶片（10）用作阳极电极，另一金属板（65）用作阴极电极。 在预定的阳极溶解电流密度下，对阳极和阴极施加电压差。 这导致在金属晶片上提供平坦化表面的反应。 添加剂被包括在吸附在晶片表面上的电解质溶液（55）中，促使较高点处的更高的去除率和较低的去除率降低。 此外，在本发明的另一实施例中，脉冲电解方法（260）其中正电位和负电位交替地施加到阳极和阴极电极，进一步促进了表面平坦化。

公开(公告)号：US07077725B2

公开(公告)日：2006-07-18

申请号：US09949275

申请日：2001-09-07

申请人： Lizhong Sun ,  Stan Tsai ,  Fritz Redeker

发明人： Lizhong Sun ,  Stan Tsai ,  Fritz Redeker

IPC分类号： B24B1/00

CPC分类号： H01L21/3212 ,  H01L21/32115

摘要： In advanced electrolytic polish (AEP) method, a metal wafer (10) acts as an anodic electrodes and another metal plate (65) is used as a cathodic electrode. A voltage differential is applied to the anode and cathode under a predetermined anodic dissolution current density. This causes a reaction that provides a planarized surface on the metal wafers. Additives are included in the electrolyte solution (55) which adsorb onto the wafer surface urging a higher removal rate at higher spots and a lower removal rate at lower spots. Also, in another embodiment of the present invention is a pulsed-electrolytic process (260) in which positive and negative potentials are applied to the anodic and cathodic electrodes alternately, further encouraging surface planarization. AEP can be used either as a first step followed by a mechanical polish or a second step between initial CMP polish and a third step mechanical polish. The present invention may also be added as a last step of copper electroplating process and so may be used in the manufacture of all kinds of patterned metal wafers.

摘要翻译： 在高级电解抛光（AEP）方法中，金属晶片（10）用作阳极电极，另一金属板（65）用作阴极电极。 在预定的阳极溶解电流密度下，对阳极和阴极施加电压差。 这导致在金属晶片上提供平坦化表面的反应。 添加剂被包括在吸附在晶片表面上的电解质溶液（55）中，促使较高点处的更高的去除率和较低的去除率降低。 此外，在本发明的另一个实施例中，脉冲电解方法（260）其中正电位和负电位交替地施加到阳极和阴极电极，进一步促进了表面平坦化。 AEP可以作为第一步，然后是机械抛光，或者在初始CMP抛光和第三步机械抛光之间使用第二步。 本发明也可以作为铜电镀工艺的最后一步添加，因此可用于制造各种图案化的金属晶片。

公开(公告)号：US20050284770A1

公开(公告)日：2005-12-29

申请号：US11215254

申请日：2005-08-30

申请人： Paul Butterfield ,  Liang-Yuh Chen ,  Yonqi Hu ,  Antoine Manens ,  Rashid Mavliev ,  Stan Tsai ,  Feng Liu ,  Ralph Wadensweiler ,  Lizhong Sun ,  Siew Neo ,  Alain Duboust

发明人： Paul Butterfield ,  Liang-Yuh Chen ,  Yonqi Hu ,  Antoine Manens ,  Rashid Mavliev ,  Stan Tsai ,  Feng Liu ,  Ralph Wadensweiler ,  Lizhong Sun ,  Siew Neo ,  Alain Duboust

IPC分类号： B23H5/00 ,  B23H5/06 ,  B23H5/08 ,  B23H5/10 ,  B24B37/04 ,  B24B49/16 ,  B24B53/007 ,  B24D13/14 ,  C25D17/00 ,  C25D17/10 ,  H01L21/321

CPC分类号： B23H5/06 ,  B23H5/08 ,  B23H5/10 ,  B24B37/046 ,  B24B37/11 ,  B24B37/22 ,  B24B37/24 ,  B24B37/26 ,  B24B49/16 ,  B24B53/017 ,  C25D17/10 ,  H01L21/32125

摘要： Embodiments of a polishing article for polishing a substrate are provided. In one embodiment, the polishing article includes a ring-shaped upper layer having a polishing surface, and a conductive layer coupled to the upper layer and forming a replaceable assembly therewith.

摘要翻译： 提供了用于研磨衬底的抛光制品的实施例。 在一个实施例中，抛光制品包括具有抛光表面的环形上层，以及耦合到上层并与其形成可更换组件的导电层。

公开(公告)号：US20050000801A1

公开(公告)日：2005-01-06

申请号：US10880752

申请日：2004-06-30

申请人： Yan Wang ,  Siew Neo ,  Feng Liu ,  Stan Tsai ,  Yongqi Hu ,  Alain Duboust ,  Antoine Manens ,  Ralph Wadensweiler ,  Rashid Mavliev ,  Liang-Yuh Chen ,  Donald Olgado ,  Paul Butterfield ,  Ming-Kuei Tseng ,  Shou-Sung Chang ,  Lizhong Sun

发明人： Yan Wang ,  Siew Neo ,  Feng Liu ,  Stan Tsai ,  Yongqi Hu ,  Alain Duboust ,  Antoine Manens ,  Ralph Wadensweiler ,  Rashid Mavliev ,  Liang-Yuh Chen ,  Donald Olgado ,  Paul Butterfield ,  Ming-Kuei Tseng ,  Shou-Sung Chang ,  Lizhong Sun

IPC分类号： B23H5/06 ,  B23H5/08 ,  B23H5/10 ,  B24B37/04 ,  B24B49/16 ,  B24B53/007 ,  B24D13/14 ,  H01L21/321 ,  C25D17/00

CPC分类号： B23H5/06 ,  B23H5/08 ,  B23H5/10 ,  B24B37/046 ,  B24B37/16 ,  B24B49/16 ,  B24B53/017 ,  H01L21/32125

摘要： Embodiments of the invention generally provide a method and apparatus for processing a substrate in an electrochemical mechanical planarizing system. In one embodiment, a cell for polishing a substrate includes a processing pad disposed on a top surface of a platen assembly. A plurality of conductive elements are arranged in a spaced-apart relation across the upper planarizing surface and adapted to bias the substrate relative to an electrode disposed between the pad and the platen assembly. A plurality of passages are formed through the platen assembly between the top surface and a plenum defined within the platen assembly. In another embodiment, a system is provided having a bulk processing cell and a residual processing cell. The residual processing cell includes a biased conductive planarizing surface. In further embodiments, the conductive element is protected from attack by process chemistries.

摘要翻译： 本发明的实施方案通常提供用于在电化学机械平面化系统中处理基底的方法和装置。 在一个实施例中，用于抛光衬底的单元包括设置在压板组件的顶表面上的处理衬垫。 多个导电元件跨过上平坦化表面以间隔的关系布置，并且适于相对于设置在垫和压板组件之间的电极偏压衬底。 多个通道通过压板组件形成在顶表面和限定在压板组件内的气室之间。 在另一个实施例中，提供了具有批处理单元和残余处理单元的系统。 残余处理单元包括偏置的导电平面化表面。 在另外的实施方案中，保护导电元件免受过程化学物质的侵蚀。

公开(公告)号：US06709316B1

公开(公告)日：2004-03-23

申请号：US09698864

申请日：2000-10-27

申请人： Lizhong Sun ,  Stan Tsai ,  Shijian Li

发明人： Lizhong Sun ,  Stan Tsai ,  Shijian Li

IPC分类号： B24B700

CPC分类号： C09G1/02 ,  H01L21/7684

摘要： A method and composition for planarizing a substrate surface having a barrier layer disposed thereon. In one aspect, the invention provides for planarizing a substrate surface having a barrier layer and a copper containing material disposed thereon including chemical mechanical polishing the substrate to selectively remove excess copper containing material, chemical mechanical polishing the substrate to selectively remove residual copper containing material and a portion of the barrier layer, and chemical mechanical polishing the substrate to selectively remove residual barrier layer.

摘要翻译： 一种用于平坦化其上设置有阻挡层的衬底表面的方法和组合物。 在一个方面，本发明提供了平面化具有阻挡层和设置在其上的含铜材料的衬底表面，包括化学机械抛光衬底以选择性地去除过量的含铜材料，化学机械抛光衬底以选择性地去除剩余的含铜材料，以及 阻挡层的一部分，以及化学机械抛光衬底以选择性地去除残留阻挡层。

公开(公告)号：US06541384B1

公开(公告)日：2003-04-01

申请号：US09657391

申请日：2000-09-08

申请人： Lizhong Sun ,  Stan Tsai ,  Shijian Li ,  John White

发明人： Lizhong Sun ,  Stan Tsai ,  Shijian Li ,  John White

IPC分类号： H01L2100

CPC分类号： C09G1/02

摘要： The present invention provides a chemical mechanical polishing composition for planarizing copper and a method for planarizing, or initiating the planarization of, copper using the composition. The chemical mechanical polishing composition includes an oxidizing agent and a copper (II) compound. The composition optionally includes one or more of the following compound types: a complexing agent; a corrosion inhibitor; an acid; and, an abrasive. In one embodiment, the oxidizing agent is hydrogen peroxide, ferric nitrate or an iodate. In another embodiment, the copper (II) compound is CuSO4. The chemical mechanical polishing method involves the step of polishing a copper layer using a composition that includes an oxidizing agent and a copper (II) compound. The composition is formed in a variety of ways. In one embodiment, it is formed by adding the copper (II) compound to a solution containing the oxidizing agent, and any included optional compound types, in deionized water. In another embodiment, it is formed by adding a solution containing the copper (II) compound in deionized water to a solution containing the oxidizing agent, and any included optional compound types, in deionized water.

摘要翻译： 本发明提供了一种用于平坦化铜的化学机械抛光组合物和使用该组合物平坦化或起始铜的平面化的方法。 化学机械抛光组合物包括氧化剂和铜（II）化合物。 组合物任选地包括一种或多种以下化合物类型：络合剂; 腐蚀抑制剂; 酸; 和磨料。 在一个实施方案中，氧化剂是过氧化氢，硝酸铁或碘酸盐。 在另一个实施方案中，铜（II）化合物是CuSO 4。 化学机械抛光方法包括使用包含氧化剂和铜（II）化合物的组合物抛光铜层的步骤。 组合物以各种方式形成。 在一个实施方案中，其通过将铜（II）化合物加入到含有氧化剂的溶液和任何所包含的任选化合物类型的去离子水中而形成。 在另一个实施方案中，其通过在去离子水中将含有铜（II）化合物的溶液在去离子水中加入到含有氧化剂和任何所包含的任选化合物类型的溶液中而形成。

公开(公告)号：US07384534B2

公开(公告)日：2008-06-10

申请号：US11074274

申请日：2005-03-07

申请人： Lizhong Sun ,  Feng Q. Liu ,  Siew Neo ,  Stan Tsai ,  Liang-Yuh Chen

发明人： Lizhong Sun ,  Feng Q. Liu ,  Siew Neo ,  Stan Tsai ,  Liang-Yuh Chen

IPC分类号： C25F3/00 ,  C09K13/06

CPC分类号： B23H3/08 ,  B23H5/08 ,  B24B37/0056 ,  B24B37/044 ,  B24B37/046 ,  C09G1/04 ,  C25F3/02 ,  H01L21/32125 ,  H01L21/32134

摘要： Electrolyte compositions and methods for planarizing a surface of a substrate using the electrolyte compositions are provided. In one aspect, an electrolyte composition includes one or more chelating agents, one or more corrosion inhibitors, and one or more pH adjusting agents. In another aspect, an electrolyte composition includes one or more chelating agents, two or more corrosion inhibitors, and one or more pH adjusting agents. In another aspect, an electrolyte composition includes one or more chelating agents, one or more corrosion inhibitors, one or more pH adjusting agents, and one or more electrically resistive additives.

摘要翻译： 提供了电解质组合物和使用电解质组合物平坦化基材表面的方法。 一方面，电解质组合物包括一种或多种螯合剂，一种或多种腐蚀抑制剂和一种或多种pH调节剂。 另一方面，电解质组合物包括一种或多种螯合剂，两种或更多种腐蚀抑制剂和一种或多种pH调节剂。 另一方面，电解质组合物包括一种或多种螯合剂，一种或多种腐蚀抑制剂，一种或多种pH调节剂和一种或多种电阻添加剂。

公开(公告)号：US07022608B2

公开(公告)日：2006-04-04

申请号：US10419440

申请日：2003-04-21

申请人： Lizhong Sun ,  Stan Tsai ,  Shijian Li

发明人： Lizhong Sun ,  Stan Tsai ,  Shijian Li

IPC分类号： H01L21/302

CPC分类号： C09G1/02

摘要： A method, composition, and computer readable medium for planarizing a substrate. In one aspect, the composition includes one or more chelating agents and ions of at least one transition metal, one or more surfactants, one or more oxidizers, one or more corrosion inhibitors, and deionized water. The composition may further comprise one or more agents to adjust the pH and/or abrasive particles. The method comprises planarizing a substrate using a composition including one or more chelating agents and ions of at least one transition metal. In one aspect, the method comprises processing a substrate disposed on a polishing pad including performing a first polishing process to substantially remove the copper containing material, performing a second polishing process to remove residual copper containing material, the second polishing process comprising delivering a CMP composition to the polishing pad, mixing one or more chelating agents and ions of at least one transition metal in situ with the CMP composition, and removing residual copper containing materials from the substrate surface. The invention also provides a computer readable medium bearing instructions for planarizing a substrate surface, the instructions arranged, when executed by one or more processors, to cause one or more processors to control a system to perform polishing the substrate to substantially remove copper containing material formed thereon and polishing the substrate with a CMP composition comprising one or more chelating agents and ions of at least one transition metal to remove residual copper containing material.

公开(公告)号：US20080045021A1

公开(公告)日：2008-02-21

申请号：US11923276

申请日：2007-10-24

申请人： Stan Tsai ,  Shijian Li ,  Feng Liu ,  Lizhong Sun ,  Liang-Yuh Chen

发明人： Stan Tsai ,  Shijian Li ,  Feng Liu ,  Lizhong Sun ,  Liang-Yuh Chen

IPC分类号： H01L21/461

CPC分类号： B24B37/0056 ,  B24B37/044 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/3212

摘要： Compositions and methods for removal of barrier layer materials by a chemical mechanical polishing technique are provided. In one aspect, the invention provides a composition adapted for removing a barrier layer material in a chemical mechanical polishing technique including at least one reducing agent selected from the group of bicarboxylic acids, tricarboxylic acids, and combinations thereof, at least one reducing agent selected from the group of glucose, hydroxylamine, and combinations thereof, and deionized water, wherein the composition has a pH of about 7 or less. The composition may be used in a method for removing the barrier layer material including applying the composition to a polishing pad and polishing the substrate in the presence of the composition to remove the barrier layer.

摘要翻译： 提供了通过化学机械抛光技术去除阻挡层材料的组合物和方法。 一方面，本发明提供一种组合物，其适于在化学机械抛光技术中除去阻挡层材料，该技术包括至少一种选自二羧酸，三羧酸及其组合的还原剂，至少一种还原剂，其选自 该组葡萄糖，羟胺及其组合以及去离子水，其中所述组合物具有约7或更低的pH。 组合物可以用于除去阻挡层材料的方法，包括将组合物施加到抛光垫上，并在组合物存在下抛光基底以除去阻挡层。

公开(公告)号：US20050282380A1

公开(公告)日：2005-12-22

申请号：US10972191

申请日：2004-10-22

申请人： Stan Tsai ,  Liang-Yuh Chen ,  Lizhong Sun ,  Shijian Li ,  Feng Liu ,  Rashid Mavliev ,  Ratson Morad ,  Daniel Carl

发明人： Stan Tsai ,  Liang-Yuh Chen ,  Lizhong Sun ,  Shijian Li ,  Feng Liu ,  Rashid Mavliev ,  Ratson Morad ,  Daniel Carl

IPC分类号： B24B37/04 ,  B24B49/16 ,  H01L21/321 ,  H01L21/768 ,  H01L21/00 ,  B24B49/00 ,  B24B51/00 ,  H01L21/4763

CPC分类号： H01L21/7684 ,  B24B37/042 ,  B24B49/16 ,  H01L21/3212 ,  Y02P80/30

摘要： Methods and apparatus for processing substrates to improve polishing uniformity, improve planarization, remove residual material and minimize defect formation are provided. In one aspect, a method is provided for processing a substrate having a conductive material and a low dielectric constant material disposed thereon including polishing a substrate at a polishing pressures of about 2 psi or less and at platen rotational speeds of about 200 cps or greater. The polishing process may use an abrasive-containing polishing composition having up to about 1 wt. % of abrasives. The polishing process may be integrated into a multi-step polishing process.

摘要翻译： 提供了用于处理基板以改善抛光均匀性，改善平面化，去除残留材料并最小化缺陷形成的方法和装置。 在一个方面，提供了一种用于处理具有导电材料和设置在其上的低介电常数材料的衬底的方法，其包括在约2psi或更小的抛光压力和约200cps或更高的压板旋转速度下抛光衬底。 抛光工艺可以使用含有至多约1重量％的磨料的抛光组合物。 磨料的百分比。 抛光工艺可以集成到多步抛光工艺中。