公开(公告)号：US07012025B2

公开(公告)日：2006-03-14

申请号：US09755717

申请日：2001-01-05

申请人： Lizhong Sun ,  Stan D. Tsai ,  Shijian Li ,  Feng Liu

发明人： Lizhong Sun ,  Stan D. Tsai ,  Shijian Li ,  Feng Liu

IPC分类号： H01L21/302

CPC分类号： H01L21/3212 ,  C09G1/02

摘要： The invention relates generally to a composition and a method for selective removal of a barrier layer in chemical mechanical polishing. In one aspect, the composition for selective removal of a barrier layer includes at least one reducing agent, ions from at least one transitional metal, and water. The composition may further include at least one buffer for pH stability, at least one pH adjusting agent for providing an initial pH, a corrosion inhibitor, abrasive particles, and/or a metal chelating agent. In another embodiment, the invention relates generally to a composition and a method for removal of a conductive material layer and a barrier layer in chemical mechanical polishing. In one aspect, the method for removal of a conductive material layer and a barrier layer includes applying a conductive-material-layer-selective composition to a polishing pad, polishing the substrate in presence of the conductive-material-layer-selective composition, applying a barrier-layer-selective composition to a polishing pad, and polishing the substrate in presence of the barrier-layer-selective composition.

公开(公告)号：US07678245B2

公开(公告)日：2010-03-16

申请号：US10880752

申请日：2004-06-30

申请人： Yan Wang ,  Siew Neo ,  Feng Liu ,  Stan D. Tsai ,  Yongqi Hu ,  Alain Duboust ,  Antoine Manens ,  Ralph M. Wadensweiler ,  Rashid Mavliev ,  Liang-Yuh Chen ,  Donald J. K. Olgado ,  Paul D. Butterfield ,  Ming-Kuei Tseng ,  Shou-Sung Chang ,  Lizhong Sun

发明人： Yan Wang ,  Siew Neo ,  Feng Liu ,  Stan D. Tsai ,  Yongqi Hu ,  Alain Duboust ,  Antoine Manens ,  Ralph M. Wadensweiler ,  Rashid Mavliev ,  Liang-Yuh Chen ,  Donald J. K. Olgado ,  Paul D. Butterfield ,  Ming-Kuei Tseng ,  Shou-Sung Chang ,  Lizhong Sun

IPC分类号： C25B9/00

CPC分类号： B23H5/06 ,  B23H5/08 ,  B23H5/10 ,  B24B37/046 ,  B24B37/16 ,  B24B49/16 ,  B24B53/017 ,  H01L21/32125

摘要： Embodiments of the invention generally provide a method and apparatus for processing a substrate in an electrochemical mechanical planarizing system. In one embodiment, a cell for polishing a substrate includes a processing pad disposed on a top surface of a platen assembly. A plurality of conductive elements are arranged in a spaced-apart relation across the upper planarizing surface and adapted to bias the substrate relative to an electrode disposed between the pad and the platen assembly. A plurality of passages are formed through the platen assembly between the top surface and a plenum defined within the platen assembly. In another embodiment, a system is provided having a bulk processing cell and a residual processing cell. The residual processing cell includes a biased conductive planarizing surface. In further embodiments, the conductive element is protected from attack by process chemistries.

摘要翻译： 本发明的实施方案通常提供用于在电化学机械平面化系统中处理基底的方法和装置。 在一个实施例中，用于抛光衬底的单元包括设置在压板组件的顶表面上的处理衬垫。 多个导电元件跨过上平坦化表面以间隔的关系布置，并且适于相对于设置在垫和压板组件之间的电极偏压衬底。 多个通道通过压板组件形成在顶表面和限定在压板组件内的气室之间。 在另一个实施例中，提供了具有批处理单元和残余处理单元的系统。 残余处理单元包括偏置的导电平面化表面。 在另外的实施方案中，保护导电元件免受过程化学物质的侵蚀。

公开(公告)号：US20060144825A1

公开(公告)日：2006-07-06

申请号：US11368839

申请日：2006-03-06

申请人： Stand Tsai ,  Shijian Li ,  Feng Liu ,  Lizhong Sun ,  Liang-Yuh Chen

发明人： Stand Tsai ,  Shijian Li ,  Feng Liu ,  Lizhong Sun ,  Liang-Yuh Chen

IPC分类号： C09K13/00 ,  C03C15/00 ,  H01L21/302 ,  B44C1/22 ,  C23F1/00

CPC分类号： B24B37/0056 ,  B24B37/044 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/3212

摘要： Compositions and methods for removal of barrier layer materials by a chemical mechanical polishing technique are provided. In one aspect, the invention provides a composition adapted for removing a barrier layer material in a chemical mechanical polishing technique including at least one reducing agent selected from the group of bicarboxylic acids, tricarboxylic acids, and combinations thereof, at least one reducing agent selected from the group of glucose, hydroxylamine, and combinations thereof, and deionized water, wherein the composition has a pH of about 7 or less. The composition may be used in a method for removing the barrier layer material including applying the composition to a polishing pad and polishing the substrate in the presence of the composition to remove the barrier layer.

公开(公告)号：US20060166487A1

公开(公告)日：2006-07-27

申请号：US11393999

申请日：2006-03-30

申请人： Stan Tsai ,  Liang-Yuh Chen ,  Lizhong Sun ,  Shijian Li ,  Feng Liu ,  Rashid Mavliev ,  Ratson Morad ,  Daniel Carl

发明人： Stan Tsai ,  Liang-Yuh Chen ,  Lizhong Sun ,  Shijian Li ,  Feng Liu ,  Rashid Mavliev ,  Ratson Morad ,  Daniel Carl

IPC分类号： H01L21/4763 ,  H01L21/461

CPC分类号： H01L21/7684 ,  B24B37/042 ,  B24B49/16 ,  H01L21/3212 ,  Y02P80/30

摘要： Methods and apparatus for processing substrates to improve polishing uniformity, improve planarization, remove residual material and minimize defect formation are provided. In one aspect, a method is provided for processing a substrate having a conductive material and a low dielectric constant material disposed thereon including polishing a substrate at a polishing pressures of about 2 psi or less and at platen rotational speeds of about 200 cps or greater. The polishing process may use an abrasive-containing polishing composition having up to about 1 wt. % of abrasives. The polishing process may be integrated into a multi-step polishing process.

公开(公告)号：US20080045021A1

公开(公告)日：2008-02-21

申请号：US11923276

申请日：2007-10-24

申请人： Stan Tsai ,  Shijian Li ,  Feng Liu ,  Lizhong Sun ,  Liang-Yuh Chen

发明人： Stan Tsai ,  Shijian Li ,  Feng Liu ,  Lizhong Sun ,  Liang-Yuh Chen

IPC分类号： H01L21/461

CPC分类号： B24B37/0056 ,  B24B37/044 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/3212

摘要： Compositions and methods for removal of barrier layer materials by a chemical mechanical polishing technique are provided. In one aspect, the invention provides a composition adapted for removing a barrier layer material in a chemical mechanical polishing technique including at least one reducing agent selected from the group of bicarboxylic acids, tricarboxylic acids, and combinations thereof, at least one reducing agent selected from the group of glucose, hydroxylamine, and combinations thereof, and deionized water, wherein the composition has a pH of about 7 or less. The composition may be used in a method for removing the barrier layer material including applying the composition to a polishing pad and polishing the substrate in the presence of the composition to remove the barrier layer.

摘要翻译： 提供了通过化学机械抛光技术去除阻挡层材料的组合物和方法。 一方面，本发明提供一种组合物，其适于在化学机械抛光技术中除去阻挡层材料，该技术包括至少一种选自二羧酸，三羧酸及其组合的还原剂，至少一种还原剂，其选自 该组葡萄糖，羟胺及其组合以及去离子水，其中所述组合物具有约7或更低的pH。 组合物可以用于除去阻挡层材料的方法，包括将组合物施加到抛光垫上，并在组合物存在下抛光基底以除去阻挡层。

公开(公告)号：US20050282380A1

公开(公告)日：2005-12-22

申请号：US10972191

申请日：2004-10-22

申请人： Stan Tsai ,  Liang-Yuh Chen ,  Lizhong Sun ,  Shijian Li ,  Feng Liu ,  Rashid Mavliev ,  Ratson Morad ,  Daniel Carl

发明人： Stan Tsai ,  Liang-Yuh Chen ,  Lizhong Sun ,  Shijian Li ,  Feng Liu ,  Rashid Mavliev ,  Ratson Morad ,  Daniel Carl

IPC分类号： B24B37/04 ,  B24B49/16 ,  H01L21/321 ,  H01L21/768 ,  H01L21/00 ,  B24B49/00 ,  B24B51/00 ,  H01L21/4763

CPC分类号： H01L21/7684 ,  B24B37/042 ,  B24B49/16 ,  H01L21/3212 ,  Y02P80/30

摘要： Methods and apparatus for processing substrates to improve polishing uniformity, improve planarization, remove residual material and minimize defect formation are provided. In one aspect, a method is provided for processing a substrate having a conductive material and a low dielectric constant material disposed thereon including polishing a substrate at a polishing pressures of about 2 psi or less and at platen rotational speeds of about 200 cps or greater. The polishing process may use an abrasive-containing polishing composition having up to about 1 wt. % of abrasives. The polishing process may be integrated into a multi-step polishing process.

摘要翻译： 提供了用于处理基板以改善抛光均匀性，改善平面化，去除残留材料并最小化缺陷形成的方法和装置。 在一个方面，提供了一种用于处理具有导电材料和设置在其上的低介电常数材料的衬底的方法，其包括在约2psi或更小的抛光压力和约200cps或更高的压板旋转速度下抛光衬底。 抛光工艺可以使用含有至多约1重量％的磨料的抛光组合物。 磨料的百分比。 抛光工艺可以集成到多步抛光工艺中。

公开(公告)号：US20050284770A1

公开(公告)日：2005-12-29

申请号：US11215254

申请日：2005-08-30

申请人： Paul Butterfield ,  Liang-Yuh Chen ,  Yonqi Hu ,  Antoine Manens ,  Rashid Mavliev ,  Stan Tsai ,  Feng Liu ,  Ralph Wadensweiler ,  Lizhong Sun ,  Siew Neo ,  Alain Duboust

发明人： Paul Butterfield ,  Liang-Yuh Chen ,  Yonqi Hu ,  Antoine Manens ,  Rashid Mavliev ,  Stan Tsai ,  Feng Liu ,  Ralph Wadensweiler ,  Lizhong Sun ,  Siew Neo ,  Alain Duboust

IPC分类号： B23H5/00 ,  B23H5/06 ,  B23H5/08 ,  B23H5/10 ,  B24B37/04 ,  B24B49/16 ,  B24B53/007 ,  B24D13/14 ,  C25D17/00 ,  C25D17/10 ,  H01L21/321

CPC分类号： B23H5/06 ,  B23H5/08 ,  B23H5/10 ,  B24B37/046 ,  B24B37/11 ,  B24B37/22 ,  B24B37/24 ,  B24B37/26 ,  B24B49/16 ,  B24B53/017 ,  C25D17/10 ,  H01L21/32125

摘要： Embodiments of a polishing article for polishing a substrate are provided. In one embodiment, the polishing article includes a ring-shaped upper layer having a polishing surface, and a conductive layer coupled to the upper layer and forming a replaceable assembly therewith.

摘要翻译： 提供了用于研磨衬底的抛光制品的实施例。 在一个实施例中，抛光制品包括具有抛光表面的环形上层，以及耦合到上层并与其形成可更换组件的导电层。

公开(公告)号：US20050000801A1

公开(公告)日：2005-01-06

申请号：US10880752

申请日：2004-06-30

申请人： Yan Wang ,  Siew Neo ,  Feng Liu ,  Stan Tsai ,  Yongqi Hu ,  Alain Duboust ,  Antoine Manens ,  Ralph Wadensweiler ,  Rashid Mavliev ,  Liang-Yuh Chen ,  Donald Olgado ,  Paul Butterfield ,  Ming-Kuei Tseng ,  Shou-Sung Chang ,  Lizhong Sun

发明人： Yan Wang ,  Siew Neo ,  Feng Liu ,  Stan Tsai ,  Yongqi Hu ,  Alain Duboust ,  Antoine Manens ,  Ralph Wadensweiler ,  Rashid Mavliev ,  Liang-Yuh Chen ,  Donald Olgado ,  Paul Butterfield ,  Ming-Kuei Tseng ,  Shou-Sung Chang ,  Lizhong Sun

IPC分类号： B23H5/06 ,  B23H5/08 ,  B23H5/10 ,  B24B37/04 ,  B24B49/16 ,  B24B53/007 ,  B24D13/14 ,  H01L21/321 ,  C25D17/00

CPC分类号： B23H5/06 ,  B23H5/08 ,  B23H5/10 ,  B24B37/046 ,  B24B37/16 ,  B24B49/16 ,  B24B53/017 ,  H01L21/32125

摘要： Embodiments of the invention generally provide a method and apparatus for processing a substrate in an electrochemical mechanical planarizing system. In one embodiment, a cell for polishing a substrate includes a processing pad disposed on a top surface of a platen assembly. A plurality of conductive elements are arranged in a spaced-apart relation across the upper planarizing surface and adapted to bias the substrate relative to an electrode disposed between the pad and the platen assembly. A plurality of passages are formed through the platen assembly between the top surface and a plenum defined within the platen assembly. In another embodiment, a system is provided having a bulk processing cell and a residual processing cell. The residual processing cell includes a biased conductive planarizing surface. In further embodiments, the conductive element is protected from attack by process chemistries.

摘要翻译： 本发明的实施方案通常提供用于在电化学机械平面化系统中处理基底的方法和装置。 在一个实施例中，用于抛光衬底的单元包括设置在压板组件的顶表面上的处理衬垫。 多个导电元件跨过上平坦化表面以间隔的关系布置，并且适于相对于设置在垫和压板组件之间的电极偏压衬底。 多个通道通过压板组件形成在顶表面和限定在压板组件内的气室之间。 在另一个实施例中，提供了具有批处理单元和残余处理单元的系统。 残余处理单元包括偏置的导电平面化表面。 在另外的实施方案中，保护导电元件免受过程化学物质的侵蚀。

公开(公告)号：US20080026681A1

公开(公告)日：2008-01-31

申请号：US11868829

申请日：2007-10-08

申请人： PAUL BUTTERFIELD ,  Liang-Yuh Chen ,  Yonqi Hu ,  Antoine Manens ,  Rashid Mavliev ,  Stan Tsai ,  Feng Liu ,  Ralph Wadensweiler ,  Lizhong Sun ,  Siew Neo ,  Alain Duboust

发明人： PAUL BUTTERFIELD ,  Liang-Yuh Chen ,  Yonqi Hu ,  Antoine Manens ,  Rashid Mavliev ,  Stan Tsai ,  Feng Liu ,  Ralph Wadensweiler ,  Lizhong Sun ,  Siew Neo ,  Alain Duboust

IPC分类号： B24B29/00

CPC分类号： B23H5/06 ,  B23H5/08 ,  B23H5/10 ,  B24B37/046 ,  B24B37/11 ,  B24B37/22 ,  B24B37/24 ,  B24B37/26 ,  B24B49/16 ,  B24B53/017 ,  C25D17/10 ,  H01L21/32125

摘要： Embodiments of a polishing article for polishing a substrate are provided. In one embodiment, the polishing article includes an annular upper layer made of a dielectric material coupled to an annular lower layer made of a conductive material, and an annular subpad sandwiched between the annular upper layer and the annular lower layer forming a replaceable assembly therewith.

摘要翻译： 提供了用于研磨衬底的抛光制品的实施例。 在一个实施例中，抛光制品包括由与由导电材料制成的环形下层耦合的电介质材料制成的环形上层，以及夹在环形上层和环形下层之间的环形子垫，其与之形成可更换组件。

公开(公告)号：US20050145507A1

公开(公告)日：2005-07-07

申请号：US11074274

申请日：2005-03-07

申请人： Lizhong Sun ,  Feng Liu ,  Siew Neo ,  Stan Tsai ,  Liang-Yuh Chen

发明人： Lizhong Sun ,  Feng Liu ,  Siew Neo ,  Stan Tsai ,  Liang-Yuh Chen

IPC分类号： B23H3/08 ,  B23H5/08 ,  B24B37/04 ,  C09G1/04 ,  C25F3/02 ,  H01L21/321 ,  H01L21/3213 ,  B23H3/00

CPC分类号： B23H3/08 ,  B23H5/08 ,  B24B37/0056 ,  B24B37/044 ,  B24B37/046 ,  C09G1/04 ,  C25F3/02 ,  H01L21/32125 ,  H01L21/32134

摘要： Electrolyte compositions and methods for planarizing a surface of a substrate using the electrolyte compositions are provided. In one aspect, an electrolyte composition includes one or more chelating agents, one or more corrosion inhibitors, and one or more pH adjusting agents. In another aspect, an electrolyte composition includes one or more chelating agents, two or more corrosion inhibitors, and one or more pH adjusting agents. In another aspect, an electrolyte composition includes one or more chelating agents, one or more corrosion inhibitors, one or more pH adjusting agents, and one or more electrically resistive additives.