公开(公告)号：US09349619B2

公开(公告)日：2016-05-24

申请号：US14238552

申请日：2012-08-28

申请人： Masaya Kawamata ,  Masanobu Honda ,  Kazuhiro Kubota

发明人： Masaya Kawamata ,  Masanobu Honda ,  Kazuhiro Kubota

IPC分类号： H01L21/67 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/311 ,  H01L21/683

CPC分类号： H01L21/67069 ,  H01J37/32091 ,  H01J37/32449 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831

摘要： A plasma etching apparatus includes a processing chamber; a holding unit for holding the substrate within the processing chamber; an electrode plate facing the holding unit; a plurality of supply parts arranged at different radial positions with respect to the substrate for supplying processing gas to a space between the holding unit and the electrode plate; a high frequency power supply that supplies high frequency power to the holding unit and/or the electrode plate to convert the processing gas supplied to the space into plasma; an adjustment unit that adjusts a supply condition for each of the supply parts; and a control unit that controls the adjustment unit to vary the supply condition between a position where an effect of diffusion of processing gas on an active species concentration distribution at the substrate is dominant and a position where an effect of flow of the processing gas is dominant.

摘要翻译： 等离子体蚀刻装置包括处理室; 保持单元，用于将基板保持在处理室内; 面对所述保持单元的电极板; 多个供给部件，其布置在相对于所述基板的不同径向位置处，用于将处理气体供应到所述保持单元和所述电极板之间的空间; 高频电源，其向所述保持单元和/或所述电极板提供高频电力，以将供应到所述空间的处理气体转换为等离子体; 调整单元，调整各供给部的供给条件; 以及控制单元，其控制所述调整单元改变处理气体的扩散对所述基板的活性种类浓度分布的影响为主的位置与所述处理气体的流动的影响为主的位置之间的供给条件 。

公开(公告)号：US20100304505A1

公开(公告)日：2010-12-02

申请号：US12791082

申请日：2010-06-01

申请人： Wataru Shimizu ,  Kazuhiro Kubota ,  Daisuke Hayashi

发明人： Wataru Shimizu ,  Kazuhiro Kubota ,  Daisuke Hayashi

IPC分类号： H01L21/30

CPC分类号： H01L21/76814 ,  H01L21/3105 ,  H01L21/76826 ,  Y10S438/935

摘要： There is provided a processing method for performing a recovery process on a damaged layer formed on a surface of a low-k film of a target substrate by introducing a processing gas containing a methyl group into a processing chamber. The method includes: increasing an internal pressure of the processing chamber up to a first pressure lower than a processing pressure for the recovery process by introducing a dilution gas into the processing chamber maintained in a depressurized state; then stopping the introduction of the dilution gas, and increasing the internal pressure of the processing chamber up to a second pressure as the processing pressure for the recovery process by introducing the processing gas into a region where the target substrate exists within the processing chamber; and performing the recovery process on the target substrate while the processing pressure is maintained.

摘要翻译： 提供了一种处理方法，用于通过将含有甲基的处理气体引入处理室来对目标衬底的低k膜的表面上形成的损伤层进行恢复处理。 该方法包括：通过将稀释气体引入维持在减压状态的处理室中，将处理室的内部压力提高到低于回收处理的处理压力的第一压力; 然后停止引入稀释气体，并且通过将处理气体引入到处理室内存在目标衬底的区域中，将处理室的内部压力提高到第二压力作为回收处理的处理压力; 并且在维持处理压力的同时对目标基板进行恢复处理。

公开(公告)号：US20080310068A1

公开(公告)日：2008-12-18

申请号：US12155078

申请日：2008-05-29

申请人： Hiroo Yabe ,  Kazuhiro Kubota ,  Masato Sasahara

发明人： Hiroo Yabe ,  Kazuhiro Kubota ,  Masato Sasahara

IPC分类号： H03K17/18 ,  H02H5/04

CPC分类号： H03K17/18 ,  H01L2924/0002 ,  H03K17/08122 ,  H03K2017/0806 ,  H05B39/047 ,  Y02B20/144 ,  H01L2924/00

摘要： A control circuit of a semiconductor device includes: a semiconductor element which supplies an electric power to a load; an over-heat protecting unit having: a temperature detecting section which detects a rise in temperature; a latch section which holds an output of the temperature detecting section; and a gate interrupting section which interrupts an input to a gate of the semiconductor element in accordance with the output of the latch section; a control unit which supplies a PWM signal for turning on/off the semiconductor element; a driving electric power supply unit which supplies a driving electric power for driving the over-heat protecting unit; and a timer unit which allows the driving electric power supply unit to supply the driving electric power for a predetermined period when the input to the gate of the semiconductor element is interrupted and the control unit stops to supply the PWM signal.

摘要翻译： 半导体器件的控制电路包括：向负载提供电力的半导体元件; 一种过热保护单元，具有：温度检测部，其检测温度上升; 闩锁部，其保持所述温度检测部的输出; 以及栅极中断部，其根据所述闩锁部的输出中断对所述半导体元件的栅极的输入; 控制单元，其提供用于打开/关闭所述半导体元件的PWM信号; 提供用于驱动过热保护单元的驱动电力的驱动电力供给单元; 以及定时器单元，其允许驱动电力供应单元在半导体元件的栅极的输入被中断并且控制单元停止以提供PWM信号时将驱动电力提供预定周期。

公开(公告)号：US06577091B2

公开(公告)日：2003-06-10

申请号：US09910840

申请日：2001-07-24

申请人： Hiroo Yabe ,  Kazuhiro Kubota

发明人： Hiroo Yabe ,  Kazuhiro Kubota

IPC分类号： H02P104

CPC分类号： B60S1/08

摘要： A wiper control apparatus includes a combination switch 2, a wipermotor 7, an autostop (AS) switch 8, a first semiconductor switch element 4 for on/off controlling energization of the wiper motor, a second semiconductor switch element 5 for turning on a closed circuit which passes a reverse current through the wiper motor 7 while the energization for the wiper motor 7 is off, a controller for ON/OFF controlling the first and the second semiconductor switch element, and a current limiting resistor R1 for limiting the current flowing the second semiconductor switch element 5. In this configuration, a wiper control apparatus can be provided which can solve the problem when the abnormality of short-circuiting downstream of the wiper motor occurs, is compact, reliable and surely operable using semiconductor switches and a digital-controlled controller.

摘要翻译： 刮水器控制装置包括组合开关2，擦拭马达7，自动停止（AS）开关8，用于开/关控制刮水器马达的通电的第一半导体开关元件4，用于打开关闭的第二半导体开关元件5 在擦拭器电动机7的通电关闭的同时使反向电流通过刮水器马达7的电路，用于开/关控制第一和第二半导体开关元件的控制器，以及用于限制流过电流的电流的限流电阻器R1 第二半导体开关元件5.在该结构中，可以提供一种雨刮器控制装置，其可以解决当雨刮器电动机下游发生短路的异常发生时的问题，使用半导体开关和数字 - 控制控制器。

公开(公告)号：US06190495B1

公开(公告)日：2001-02-20

申请号：US09361992

申请日：1999-07-28

申请人： Kazuhiro Kubota ,  Shigeki Tozawa ,  Jun Hirose ,  Akira Koshiishi ,  Tomomi Kondo

发明人： Kazuhiro Kubota ,  Shigeki Tozawa ,  Jun Hirose ,  Akira Koshiishi ,  Tomomi Kondo

IPC分类号： B23K1000

CPC分类号： H01L21/67069 ,  C23F4/00 ,  H01J37/32082 ,  H01J37/3266

摘要： The magnetron plasma processing apparatus includes a vacuum chamber in which a semiconductor wafer is accommodated. In the chamber, a pair of electrodes are provided to face each other, and the wafer is placed on one electrode. Between a pair of the electrodes, a vertical electric field is formed, and a horizontal magnetic field is formed by the dipole ring magnet to cross perpendicularly to the electric field. The magnetic field has a gradient of the magnetic field intensity such that the intensity is high on the upstream side and is low on the downstream side in the electron-drift direction. Further, the magnetic field is formed such that the intensity is made uniform over a large area including the end portion of the wafer on the upstream side in the electron-drift direction and a region right outside it.

摘要翻译： 磁控管等离子体处理装置包括容纳半导体晶片的真空室。 在室内设置一对电极以彼此面对，并且将晶片放置在一个电极上。 在一对电极之间形成垂直电场，并且由偶极环磁体形成水平磁场以垂直于电场交叉。 磁场具有磁场强度的梯度，使得上游侧的强度高，并且在电子漂移方向的下游侧具有低的磁场强度。 此外，磁场形成为使得强度在包括晶片在电子漂移方向上游侧的晶片的端部和右侧的区域的大面积上均匀。

公开(公告)号：US4809394A

公开(公告)日：1989-03-07

申请号：US91602

申请日：1987-08-31

申请人： Hisao Suka ,  Akira Iwao ,  Kazuhiro Kubota ,  Yoshitaro Ishii ,  Masao Sunagawa

发明人： Hisao Suka ,  Akira Iwao ,  Kazuhiro Kubota ,  Yoshitaro Ishii ,  Masao Sunagawa

IPC分类号： A47L9/00 ,  A47L5/14

CPC分类号： A47L9/0072

摘要： A vacuum cleaner with panel portion structure which includes an improved panel main body and a blower facility valve body. The panel main body has an exhaust air port and an opening for a blower facility. The blower facility valve body is provided at a lower side of the panel main body and is rotatably supported so as to normally shut the blower facility opening. A first exhaust air passage is formed between the intermediate exhaust air port to the main body exhaust air port. A second exhaust air passage is formed between the intermediate exhaust air port to the blower facility opening. The first exhaust air passage and the second exhaust air passage are changed over by the blower facility valve body. The improved blower facility structure permits the development of a series of vacuum cleaners with and without a blower facility.

摘要翻译： 一种具有面板部分结构的真空吸尘器，包括改进的面板主体和鼓风机设备阀体。 面板主体具有排气口和用于鼓风机设备的开口。 鼓风机设置阀体设置在面板主体的下侧，并被可旋转地支撑，以便正常地关闭鼓风机设备开口。 第一排气通道形成在主体排气口的中间排气口之间。 第二排气通道形成在吹风机设置开口的中间排气口之间。 第一排气通道和第二排气通道被鼓风机设备阀体转过。 改进的鼓风机设备结构允许开发具有和不具有鼓风机设备的一系列真空吸尘器。

公开(公告)号：US09385498B2

公开(公告)日：2016-07-05

申请号：US14112736

申请日：2012-04-17

申请人： Shuuji Satake ,  Akiyoshi Kanazawa ,  Ken Ito ,  Yoshimitsu Maejima ,  Kazuya Tsubaki ,  Kazuhiro Kubota

发明人： Shuuji Satake ,  Akiyoshi Kanazawa ,  Ken Ito ,  Yoshimitsu Maejima ,  Kazuya Tsubaki ,  Kazuhiro Kubota

IPC分类号： H01R43/042 ,  H01R43/048 ,  H04L29/12

CPC分类号： H01R43/042 ,  H01R43/048 ,  H01R2201/26 ,  H04L61/2038 ,  Y10T29/53235

摘要： Disclosed is a crimp machine capable of eliminating product management for a relay connector per an ID. In the crimp machine, by a power source line, a ground line, and a signal line being positioned between a terminal mount table to which a crimp connector disposed in the relay connector is mounted and a crimp blade, and by the crimp blade being move close to a terminal mount table, the power source line, the ground line, and the signal line are thus crimped, wherein a connection terminal is disposed on the terminal mount table and an ID is made to output from the connection terminal.

摘要翻译： 公开了一种能够消除ID的中继连接器的产品管理的压接机。 在压接机中，通过电源线，接地线和信号线位于安装在中继连接器中的压接连接器的端子安装台和压接刀之间，并且通过压接刀移动 靠近端子安装台，电源线，接地线和信号线被压接，其中连接端子设置在端子安装台上，并且从连接端子输出ID。

公开(公告)号：US20120034779A1

公开(公告)日：2012-02-09

申请号：US13276894

申请日：2011-10-19

申请人： Satoru SHIMURA ,  Kazuhiro Kubota ,  Ryuichi Asako ,  Seiichi Takayama

发明人： Satoru SHIMURA ,  Kazuhiro Kubota ,  Ryuichi Asako ,  Seiichi Takayama

IPC分类号： H01L21/308

CPC分类号： H01L21/76831 ,  H01L21/02063 ,  H01L21/31058 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/67167 ,  H01L21/67178 ,  H01L21/67207 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76814 ,  H01L21/76826

摘要： In a semiconductor device manufacturing method, an etching mask (75b) having a predetermined opening pattern is formed on an etching target film (74) disposed on a target object. Then, an etching process is performed on the etching target film (74) through the opening pattern of the etching mask (75b) within a first process chamber, thereby forming a groove or hole (78a) in the etching target film. Then, the target object treated by the etching process is transferred from the first process chamber to a second process chamber, within a vacuum atmosphere. Then, a silylation process is performed on a side surface of the groove or hole (78a), which is an exposed portion of the etching target film (74), within the second process chamber.

摘要翻译： 在半导体器件制造方法中，在设置在目标物体上的蚀刻靶膜（74）上形成具有规定的开口图案的蚀刻掩模（75b）。 然后，通过第一处理室内的蚀刻掩模（75b）的开口图案对蚀刻目标膜（74）进行蚀刻处理，从而在蚀刻目标膜中形成凹槽或孔（78a）。 然后，通过蚀刻处理处理的目标物体在真空气氛中从第一处理室转移到第二处理室。 然后，在第二处理室内，作为蚀刻对象膜（74）的露出部的槽（78a）的侧面进行甲硅烷化处理。

公开(公告)号：US07902806B2

公开(公告)日：2011-03-08

申请号：US12219585

申请日：2008-07-24

申请人： Hiroo Yabe ,  Kazuhiro Kubota ,  Kazuya Tsubaki ,  Masato Sasahara

发明人： Hiroo Yabe ,  Kazuhiro Kubota ,  Kazuya Tsubaki ,  Masato Sasahara

IPC分类号： G05F1/575

CPC分类号： H05B39/047 ,  H05B37/02

摘要： A load control unit for controlling the supply of an electric power to a load from battery in accordance with a pulse-width modulation control includes: a reference voltage generating unit; a first charging/discharging unit; a second charging/discharging unit connected in series to the first charging/discharging unit to charge and discharge in reverse to those of the first charging/discharging unit; a first comparing unit that compares the voltage of the first charging/discharging unit with the reference voltage and switches between the charge and discharge of the first charging/discharging unit to generate a triangle wave; and a second comparing unit that compares a divided voltage by dividing the voltage of the battery with the voltage of the triangle wave generated by the first comparing unit to generate a PWM pulse. The ratio of capacities between the first and second charging/discharging units approximates to the ratio of resistances for obtaining the divided voltage.

摘要翻译： 一种负载控制单元，用于根据脉冲宽度调制控制来控制从电池向负载供电的电力包括：基准电压产生单元; 第一充电/放电单元; 与第一充电/放电单元串联连接的与第一充电/放电单元相反充放电的第二充电/放电单元; 第一比较单元，其将第一充电/放电单元的电压与参考电压进行比较，并且在第一充电/放电单元的充电和放电之间切换以产生三角波; 以及第二比较单元，其通过将电池的电压除以由第一比较单元生成的三角波的电压来分压分压，以产生PWM脉冲。 第一和第二充电/放电单元之间的容量比接近用于获得分压的电阻的比率。

公开(公告)号：US07768759B2

公开(公告)日：2010-08-03

申请号：US12155078

申请日：2008-05-29

申请人： Hiroo Yabe ,  Kazuhiro Kubota ,  Masato Sasahara

发明人： Hiroo Yabe ,  Kazuhiro Kubota ,  Masato Sasahara

IPC分类号： H02H5/04

CPC分类号： H03K17/18 ,  H01L2924/0002 ,  H03K17/08122 ,  H03K2017/0806 ,  H05B39/047 ,  Y02B20/144 ,  H01L2924/00

摘要： A control circuit of a semiconductor device includes: a semiconductor element which supplies an electric power to a load; an over-heat protecting unit having: a temperature detecting section which detects a rise in temperature; a latch section which holds an output of the temperature detecting section; and a gate interrupting section which interrupts an input to a gate of the semiconductor element in accordance with the output of the latch section; a control unit which supplies a PWM signal for turning on/off the semiconductor element; a driving electric power supply unit which supplies a driving electric power for driving the over-heat protecting unit; and a timer unit which allows the driving electric power supply unit to supply the driving electric power for a predetermined period when the input to the gate of the semiconductor element is interrupted and the control unit stops to supply the PWM signal.

摘要翻译： 半导体器件的控制电路包括：向负载提供电力的半导体元件; 一种过热保护单元，具有：温度检测部，其检测温度上升; 闩锁部，其保持所述温度检测部的输出; 以及栅极中断部，其根据所述闩锁部的输出中断对所述半导体元件的栅极的输入; 控制单元，其提供用于打开/关闭所述半导体元件的PWM信号; 提供用于驱动过热保护单元的驱动电力的驱动电力供给单元; 以及定时器单元，其允许驱动电力供应单元在半导体元件的栅极的输入被中断并且控制单元停止以提供PWM信号时将驱动电力提供预定周期。