公开(公告)号：US06190495B1

公开(公告)日：2001-02-20

申请号：US09361992

申请日：1999-07-28

申请人： Kazuhiro Kubota ,  Shigeki Tozawa ,  Jun Hirose ,  Akira Koshiishi ,  Tomomi Kondo

发明人： Kazuhiro Kubota ,  Shigeki Tozawa ,  Jun Hirose ,  Akira Koshiishi ,  Tomomi Kondo

IPC分类号： B23K1000

CPC分类号： H01L21/67069 ,  C23F4/00 ,  H01J37/32082 ,  H01J37/3266

摘要： The magnetron plasma processing apparatus includes a vacuum chamber in which a semiconductor wafer is accommodated. In the chamber, a pair of electrodes are provided to face each other, and the wafer is placed on one electrode. Between a pair of the electrodes, a vertical electric field is formed, and a horizontal magnetic field is formed by the dipole ring magnet to cross perpendicularly to the electric field. The magnetic field has a gradient of the magnetic field intensity such that the intensity is high on the upstream side and is low on the downstream side in the electron-drift direction. Further, the magnetic field is formed such that the intensity is made uniform over a large area including the end portion of the wafer on the upstream side in the electron-drift direction and a region right outside it.

摘要翻译： 磁控管等离子体处理装置包括容纳半导体晶片的真空室。 在室内设置一对电极以彼此面对，并且将晶片放置在一个电极上。 在一对电极之间形成垂直电场，并且由偶极环磁体形成水平磁场以垂直于电场交叉。 磁场具有磁场强度的梯度，使得上游侧的强度高，并且在电子漂移方向的下游侧具有低的磁场强度。 此外，磁场形成为使得强度在包括晶片在电子漂移方向上游侧的晶片的端部和右侧的区域的大面积上均匀。

公开(公告)号：US20050269292A1

公开(公告)日：2005-12-08

申请号：US11137492

申请日：2005-05-26

申请人： Akira Koshiishi ,  Jun Hirose ,  Masahiro Ogasawara ,  Taichi Hirano ,  Hiromitsu Sasaki ,  Tetsuo Yoshida ,  Michishige Saito ,  Hiroyuki Ishihara ,  Jun Ooyabu ,  Kohji Numata

发明人： Akira Koshiishi ,  Jun Hirose ,  Masahiro Ogasawara ,  Taichi Hirano ,  Hiromitsu Sasaki ,  Tetsuo Yoshida ,  Michishige Saito ,  Hiroyuki Ishihara ,  Jun Ooyabu ,  Kohji Numata

IPC分类号： H05H1/46 ,  B01J3/00 ,  B01J19/08 ,  C23F1/00 ,  H01J37/32 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065

CPC分类号： H01J37/32449 ,  H01J37/32027 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32541 ,  H01J37/3255 ,  H01J37/32587

摘要： A plasma processing apparatus includes a process container configured to have a vacuum atmosphere therein. A first upper electrode is disposed to have a ring shape and to face a target substrate placed within the process container. A second upper electrode is disposed radially inside the first upper electrode and electrically insulated therefrom. A first electric feeder is configured to supply a first RF output from a first RF power supply to the first upper electrode at a first power value. A second electric feeder branches from the first electric feeder and is configured to supply the first RF output from the first RF power supply to the second upper electrode at a second power value smaller than the first power value.

摘要翻译： 一种等离子体处理装置，包括被配置为在其中具有真空气氛的处理容器。 第一上电极被设置成具有环形并且面对放置在处理容器内的目标衬底。 第二上电极径向设置在第一上电极内并与其电绝缘。 第一馈电器被配置为以第一功率值将第一RF电源的第一RF输出提供给第一上电极。 第二馈电器从第一馈电器分支并且被配置为以小于第一功率值的第二功率值将第一RF电源的第一RF输出提供给第二上电极。

公开(公告)号：US20110214813A1

公开(公告)日：2011-09-08

申请号：US13108612

申请日：2011-05-16

申请人： Akira Koshiishi ,  Jun Hirose ,  Masahiro Ogasawara ,  Taichi Hirano ,  Hiromitsu Sasaki ,  Tetsuo Yoshida ,  Michishige Saito ,  Hiroyuki Ishihara ,  Jun Ooyabu ,  Kohji Numata

发明人： Akira Koshiishi ,  Jun Hirose ,  Masahiro Ogasawara ,  Taichi Hirano ,  Hiromitsu Sasaki ,  Tetsuo Yoshida ,  Michishige Saito ,  Hiroyuki Ishihara ,  Jun Ooyabu ,  Kohji Numata

IPC分类号： H01L21/00 ,  C23F1/08

CPC分类号： H01J37/32082 ,  H01J37/32422 ,  H01J37/32935

摘要： A plasma processing method is arranged to supply a predetermined process gas into a plasma generation space in which a target substrate is placed, and turn the process gas into plasma. The substrate is subjected to a predetermined plasma process by this plasma. The spatial distribution of density of the plasma and the spatial distribution of density of radicals in the plasma are controlled independently of each other relative to the substrate by a facing portion opposite the substrate to form a predetermined process state over the entire target surface of the substrate.

摘要翻译： 等离子体处理方法被布置成将预定的处理气体供给到其中放置目标衬底的等离子体产生空间中，并将处理气体转化为等离子体。 通过该等离子体对衬底进行预定的等离子体处理。 等离子体的密度的空间分布和等离子体中的自由基密度的空间分布相对于衬底彼此独立地通过与衬底相对的面对部分彼此独立地控制，以在衬底的整个靶表面上形成预定的工艺状态 。

公开(公告)号：US20100043974A1

公开(公告)日：2010-02-25

申请号：US12607828

申请日：2009-10-28

申请人： Akira Koshiishi ,  Jun Hirose ,  Masahiro Ogasawara ,  Taichi Hirano ,  Hiromitsu Sasaki ,  Tetsuo Yoshida ,  Michishige Saito ,  Hiroyuki Ishihara ,  Jun Ooyabu ,  Kohji Numata

发明人： Akira Koshiishi ,  Jun Hirose ,  Masahiro Ogasawara ,  Taichi Hirano ,  Hiromitsu Sasaki ,  Tetsuo Yoshida ,  Michishige Saito ,  Hiroyuki Ishihara ,  Jun Ooyabu ,  Kohji Numata

IPC分类号： H01L21/465

CPC分类号： H01J37/32082 ,  H01J37/32422 ,  H01J37/32935

摘要： A plasma processing method is arranged to supply a predetermined process gas into a plasma generation space in which a target substrate is placed, and turn the process gas into plasma. The substrate is subjected to a predetermined plasma process by this plasma. The spatial distribution of density of the plasma and the spatial distribution of density of radicals in the plasma are controlled independently of each other relative to the substrate by a facing portion opposite the substrate to form a predetermined process state over the entire target surface of the substrate.

摘要翻译： 等离子体处理方法被布置成将预定的处理气体供给到其中放置目标衬底的等离子体产生空间中，并将处理气体转化为等离子体。 通过该等离子体对衬底进行预定的等离子体处理。 等离子体的密度的空间分布和等离子体中的自由基密度的空间分布相对于衬底彼此独立地通过与衬底相对的面对部分彼此独立地控制，以在衬底的整个靶表面上形成预定的工艺状态 。

公开(公告)号：US07658816B2

公开(公告)日：2010-02-09

申请号：US10933383

申请日：2004-09-03

申请人： Akira Koshiishi ,  Hideaki Tanaka ,  Nobuyuki Okayama ,  Masaaki Miyagawa ,  Shunsuke Mizukami ,  Wataru Shimizu ,  Jun Hirose ,  Toshikatsu Wakaki ,  Tomonori Miwa ,  Jun Ooyabu ,  Daisuke Hayashi

发明人： Akira Koshiishi ,  Hideaki Tanaka ,  Nobuyuki Okayama ,  Masaaki Miyagawa ,  Shunsuke Mizukami ,  Wataru Shimizu ,  Jun Hirose ,  Toshikatsu Wakaki ,  Tomonori Miwa ,  Jun Ooyabu ,  Daisuke Hayashi

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： H01L21/68735 ,  H01J37/32642 ,  H01L21/68757

摘要： A focus ring and a plasma processing apparatus capable of improving an in-surface uniformity of a surface and reducing occurrences of deposition on a backside surface of a peripheral portion of a semiconductor wafer compared to a conventional case are provided. Installed in a vacuum chamber is a susceptor for mounting the semiconductor wafer thereon and a focus ring is installed to surround the semiconductor wafer mounted on the susceptor. The focus ring includes an annular lower member made of a dielectric, and an annular upper member made of a conductive material and mounted on the lower member. The upper member includes a flat portion which is an outer peripheral portion having a top surface positioned higher than a surface to be processed of the semiconductor wafer W, and an inclined portion which is an inner peripheral portion inclined inwardly.

摘要翻译： 提供了一种聚焦环和等离子体处理装置，其能够改善表面的表面均匀性并减少与常规情况相比在半导体晶片的周边部分的背面上沉积的情况。 安装在真空室中的是用于在其上安装半导体晶片的基座，并且安装聚焦环以围绕安装在基座上的半导体晶片。 聚焦环包括由电介质制成的环形下部构件和由导电材料制成并安装在下部构件上的环形上部构件。 上部构件包括平坦部，该平坦部是具有位于比半导体晶片W的待加工表面高的顶面的外周部，以及作为向内倾斜的内周部的倾斜部。

公开(公告)号：US20060000803A1

公开(公告)日：2006-01-05

申请号：US11137673

申请日：2005-05-26

申请人： Akira Koshiishi ,  Jun Hirose ,  Masahiro Ogasawara ,  Taichi Hirano ,  Hiromitsu Sasaki ,  Tetsuo Yoshida ,  Michishige Saito ,  Hiroyuki Ishihara ,  Jun Ooyabu ,  Kohji Numata

发明人： Akira Koshiishi ,  Jun Hirose ,  Masahiro Ogasawara ,  Taichi Hirano ,  Hiromitsu Sasaki ,  Tetsuo Yoshida ,  Michishige Saito ,  Hiroyuki Ishihara ,  Jun Ooyabu ,  Kohji Numata

IPC分类号： C23F1/00

CPC分类号： H01J37/32082 ,  H01J37/32422 ,  H01J37/32935

摘要： A plasma processing method is arranged to supply a predetermined process gas into a plasma generation space in which a target substrate is placed, and turn the process gas into plasma. The substrate is subjected to a predetermined plasma process by this plasma. The spatial distribution of density of the plasma and the spatial distribution of density of radicals in the plasma are controlled independently of each other relative to the substrate by a facing portion opposite the substrate to form a predetermined process state over the entire target surface of the substrate.

公开(公告)号：US08512510B2

公开(公告)日：2013-08-20

申请号：US13108612

申请日：2011-05-16

申请人： Akira Koshiishi ,  Jun Hirose ,  Masahiro Ogasawara ,  Taichi Hirano ,  Hiromitsu Sasaki ,  Tetsuo Yoshida ,  Michishige Saito ,  Hiroyuki Ishihara ,  Jun Ooyabu ,  Kohji Numata

发明人： Akira Koshiishi ,  Jun Hirose ,  Masahiro Ogasawara ,  Taichi Hirano ,  Hiromitsu Sasaki ,  Tetsuo Yoshida ,  Michishige Saito ,  Hiroyuki Ishihara ,  Jun Ooyabu ,  Kohji Numata

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32082 ,  H01J37/32422 ,  H01J37/32935

摘要： A plasma processing method is arranged to supply a predetermined process gas into a plasma generation space in which a target substrate is placed, and turn the process gas into plasma. The substrate is subjected to a predetermined plasma process by this plasma. The spatial distribution of density of the plasma and the spatial distribution of density of radicals in the plasma are controlled independently of each other relative to the substrate by a facing portion opposite the substrate to form a predetermined process state over the entire target surface of the substrate.

摘要翻译： 等离子体处理方法被布置成将预定的处理气体供给到其中放置目标衬底的等离子体产生空间中，并将处理气体转化为等离子体。 通过该等离子体对衬底进行预定的等离子体处理。 等离子体的密度的空间分布和等离子体中的自由基密度的空间分布相对于衬底彼此独立地通过与衬底相对的面对部分彼此独立地控制，以在衬底的整个靶表面上形成预定的工艺状态 。

公开(公告)号：US07494561B2

公开(公告)日：2009-02-24

申请号：US11137492

申请日：2005-05-26

申请人： Akira Koshiishi ,  Jun Hirose ,  Masahiro Ogasawara ,  Taichi Hirano ,  Hiromitsu Sasaki ,  Tetsuo Yoshida ,  Michishige Saito ,  Hiroyuki Ishihara ,  Jun Ooyabu ,  Kohji Numata

发明人： Akira Koshiishi ,  Jun Hirose ,  Masahiro Ogasawara ,  Taichi Hirano ,  Hiromitsu Sasaki ,  Tetsuo Yoshida ,  Michishige Saito ,  Hiroyuki Ishihara ,  Jun Ooyabu ,  Kohji Numata

IPC分类号： C23C16/00 ,  H01L21/306 ,  C23F1/00

CPC分类号： H01J37/32449 ,  H01J37/32027 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32541 ,  H01J37/3255 ,  H01J37/32587

摘要： A plasma processing apparatus includes a process container configured to have a vacuum atmosphere therein. A first upper electrode is disposed to have a ring shape and to face a target substrate placed within the process container. A second upper electrode is disposed radially inside the first upper electrode and electrically insulated therefrom. A first electric feeder is configured to supply a first RF output from a first RF power supply to the first upper electrode at a first power value. A second electric feeder branches from the first electric feeder and is configured to supply the first RF output from the first RF power supply to the second upper electrode at a second power value smaller than the first power value.

摘要翻译： 一种等离子体处理装置，包括被配置为在其中具有真空气氛的处理容器。 第一上电极被设置成具有环形并且面对放置在处理容器内的目标衬底。 第二上电极径向设置在第一上电极内并与其电绝缘。 第一馈电器被配置为以第一功率值将第一RF电源的第一RF输出提供给第一上电极。 第二馈电器从第一馈电器分支并且被配置为以小于第一功率值的第二功率值将第一RF电源的第一RF输出提供给第二上电极。

公开(公告)号：US20070169891A1

公开(公告)日：2007-07-26

申请号：US10933383

申请日：2004-09-03

申请人： Akira Koshiishi ,  Hideaki Tanaka ,  Nobuyuki Okayama ,  Masaaki Miyagawa ,  Shunsuke Mizukami ,  Wataru Shimizu ,  Jun Hirose ,  Toshikatsu Wakaki ,  Tomonori Miwa ,  Jun Ooyabu ,  Daisuke Hayashi

发明人： Akira Koshiishi ,  Hideaki Tanaka ,  Nobuyuki Okayama ,  Masaaki Miyagawa ,  Shunsuke Mizukami ,  Wataru Shimizu ,  Jun Hirose ,  Toshikatsu Wakaki ,  Tomonori Miwa ,  Jun Ooyabu ,  Daisuke Hayashi

IPC分类号： C23F1/00

CPC分类号： H01L21/68735 ,  H01J37/32642 ,  H01L21/68757

摘要： A focus ring and a plasma processing apparatus capable of improving an in-surface uniformity of a surface and reducing occurrences of deposition on a backside surface of a peripheral portion of a semiconductor wafer compared to a conventional case are provided. Installed in a vacuum chamber is a susceptor for mounting the semiconductor wafer thereon and a focus ring is installed to surround the semiconductor wafer mounted on the susceptor. The focus ring includes an annular lower member made of a dielectric, and an annular upper member made of a conductive material and mounted on the lower member. The upper member includes a flat portion which is an outer peripheral portion having a top surface positioned higher than a surface to be processed of the semiconductor wafer W, and an inclined portion which is an inner peripheral portion inclined inwardly.

摘要翻译： 提供了一种聚焦环和等离子体处理装置，其能够改善表面的表面均匀性并减少与常规情况相比在半导体晶片的周边部分的背面上沉积的情况。 安装在真空室中的是用于在其上安装半导体晶片的基座，并且安装聚焦环以围绕安装在基座上的半导体晶片。 聚焦环包括由电介质制成的环形下部构件和由导电材料制成并安装在下部构件上的环形上部构件。 上部构件包括平坦部，该平坦部是具有位于比半导体晶片W的待加工表面高的顶面的外周部，以及作为向内倾斜的内周部的倾斜部。

公开(公告)号：US20050257743A1

公开(公告)日：2005-11-24

申请号：US11137516

申请日：2005-05-26

申请人： Akira Koshiishi ,  Jun Hirose ,  Masahiro Ogasawara ,  Taichi Hirano ,  Hiromitsu Sasaki ,  Tetsuo Yoshida ,  Michishige Saito ,  Hiroyuki Ishihara ,  Jun Ooyabu ,  Kohji Numata

发明人： Akira Koshiishi ,  Jun Hirose ,  Masahiro Ogasawara ,  Taichi Hirano ,  Hiromitsu Sasaki ,  Tetsuo Yoshida ,  Michishige Saito ,  Hiroyuki Ishihara ,  Jun Ooyabu ,  Kohji Numata

IPC分类号： H05H1/46 ,  C23C16/00 ,  C23C16/509 ,  C23F4/00 ,  H01J37/32 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311

CPC分类号： H01J37/32577 ,  H01J37/32082 ,  H01J37/32174 ,  H01L21/31116

摘要： A plasma processing apparatus includes a process container configured to have a vacuum atmosphere therein. An upper electrode is disposed to face a target substrate placed within the process container. An electric feeder includes a first cylindrical conductive member continuously connected to the upper electrode in an annular direction. The electric feeder is configured to supply a first RF output from a first RF power supply to the upper electrode.

摘要翻译： 一种等离子体处理装置，包括被配置为在其中具有真空气氛的处理容器。 上电极被设置为面对放置在处理容器内的目标衬底。 电动给料器包括在环形方向上连续地连接到上电极的第一圆柱形导电构件。 电馈送器被配置为将第一RF电源的第一RF输出提供给上电极。