公开(公告)号：US08203193B2

公开(公告)日：2012-06-19

申请号：US13163349

申请日：2011-06-17

申请人： Takeshi Kajiyama ,  Yoshiaki Asao ,  Akihiro Nitayama

发明人： Takeshi Kajiyama ,  Yoshiaki Asao ,  Akihiro Nitayama

IPC分类号： H01L29/82 ,  G11C11/00 ,  G11C11/14

CPC分类号： H01L43/08 ,  B82Y10/00 ,  H01L27/228

摘要： A magnetic random access memory includes a magnetoresistive effect element which has a fixed layer, a recording layer and a non-magnetic layer provided between the fixed layer and the recording layer and in which the magnetization directions of the fixed layer and the recording layer are brought into a parallel state or an anti-parallel state in accordance with a direction of a current flowing between the fixed layer and the recording layer, a first contact which is connected to the recording layer and in which a contact area between the recording layer and the first contact is smaller than an area of the recording layer, and a cap layer which is provided between the first contact and the recording layer and which directly comes in contact with the first contact and which has a resistance higher than a resistance of the recording layer.

摘要翻译： 磁性随机存取存储器包括磁阻效应元件，其具有设置在固定层和记录层之间的固定层，记录层和非磁性层，并且固定层和记录层的磁化方向被带入 根据在固定层和记录层之间流动的电流的方向，形成平行状态或反平行状态;第一触点连接到记录层，并且记录层和记录层之间的接触区域 第一触点小于记录层的面积，盖层设置在第一触点和记录层之间，并直接与第一触点接触并且具有高于记录层电阻的电阻 。

公开(公告)号：US08081505B2

公开(公告)日：2011-12-20

申请号：US12556389

申请日：2009-09-09

申请人： Takeshi Kajiyama ,  Yoshiaki Asao ,  Shigeki Takahashi ,  Minoru Amano ,  Kuniaki Sugiura

发明人： Takeshi Kajiyama ,  Yoshiaki Asao ,  Shigeki Takahashi ,  Minoru Amano ,  Kuniaki Sugiura

IPC分类号： H01L29/82

CPC分类号： H01L27/228 ,  G11C11/161 ,  H01L43/08 ,  H01L43/12

摘要： A magnetoresistive element includes a stacked structure including a fixed layer having a fixed direction of magnetization, a recording layer having a variable direction of magnetization, and a nonmagnetic layer sandwiched between the fixed layer and the recording layer, a first protective film covering a circumferential surface of the stacked structure, and made of silicon nitride, and a second protective film covering a circumferential surface of the first protective film, and made of silicon nitride. A hydrogen content in the first protective film is not more than 4 at %, and a hydrogen content in the second protective film is not less than 6 at %.

摘要翻译： 磁阻元件包括堆叠结构，其包括具有固定磁化方向的固定层，具有可变磁化方向的记录层和夹在固定层和记录层之间的非磁性层，覆盖周向表面的第一保护膜 层叠结构，由氮化硅制成，第二保护膜覆盖第一保护膜的周面，由氮化硅构成。 第一保护膜中的氢含量不大于4原子％，第二保护膜中的氢含量不低于6原子％。

公开(公告)号：US20110248365A1

公开(公告)日：2011-10-13

申请号：US13163349

申请日：2011-06-17

申请人： Takeshi KAJIYAMA ,  Yoshiaki Asao ,  Akihiro Nitayama

发明人： Takeshi KAJIYAMA ,  Yoshiaki Asao ,  Akihiro Nitayama

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  B82Y10/00 ,  H01L27/228

摘要： A magnetic random access memory includes a magnetoresistive effect element which has a fixed layer, a recording layer and a non-magnetic layer provided between the fixed layer and the recording layer and in which the magnetization directions of the fixed layer and the recording layer are brought into a parallel state or an anti-parallel state in accordance with a direction of a current flowing between the fixed layer and the recording layer, a first contact which is connected to the recording layer and in which a contact area between the recording layer and the first contact is smaller than an area of the recording layer, and a cap layer which is provided between the first contact and the recording layer and which directly comes in contact with the first contact and which has a resistance higher than a resistance of the recording layer.

摘要翻译： 磁性随机存取存储器包括磁阻效应元件，其具有设置在固定层和记录层之间的固定层，记录层和非磁性层，并且固定层和记录层的磁化方向被带入 根据在固定层和记录层之间流动的电流的方向，形成平行状态或反平行状态;第一触点连接到记录层，并且记录层和记录层之间的接触区域 第一触点小于记录层的面积，盖层设置在第一触点和记录层之间，并直接与第一触点接触并且具有高于记录层电阻的电阻 。

公开(公告)号：US20080308887A1

公开(公告)日：2008-12-18

申请号：US11943831

申请日：2007-11-21

申请人： Yoshiaki Asao ,  Takeshi Kajiyama

发明人： Yoshiaki Asao ,  Takeshi Kajiyama

IPC分类号： H01L29/82

CPC分类号： G11C11/16 ,  B82Y10/00 ,  G11C13/0004 ,  G11C13/0007 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/79 ,  H01L27/228 ,  H01L27/24

摘要： A semiconductor memory device includes first to third wiring layers formed above a semiconductor substrate, extending in a first direction, and sequentially arranged in a second direction perpendicular to the first direction, a plurality of active areas formed in the semiconductor substrate, and extending in a direction oblique to the first direction, first and second selection transistors formed in each of the active areas, and sharing a source region electrically connected to the second wiring layer, a first magnetoresistive element having one terminal electrically connected to a drain region of the first selection transistor, and the other terminal electrically connected to the first wiring layer, and a second magnetoresistive element having one terminal electrically connected to a drain region of the second selection transistor, and the other terminal electrically connected to the third wiring layer.

摘要翻译： 半导体存储器件包括形成在半导体衬底上的第一至第三布线层，沿第一方向延伸，并且沿垂直于第一方向的第二方向依次布置;形成在半导体衬底中的多个有源区， 形成在每个有源区中的第一和第二选择晶体管，并且共用与第二布线层电连接的源极区;第一磁阻元件，具有与第一选择区的漏极区域电连接的一个端子 晶体管，另一个端子电连接到第一布线层，以及第二磁阻元件，其具有一个端子电连接到第二选择晶体管的漏极区域，另一个端子电连接到第三布线层。

公开(公告)号：US20080205126A1

公开(公告)日：2008-08-28

申请号：US12037425

申请日：2008-02-26

申请人： Takeshi Kajiyama ,  Yoshiaki Asao

发明人： Takeshi Kajiyama ,  Yoshiaki Asao

IPC分类号： G11C11/14

CPC分类号： H01L43/08 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10

摘要： A magnetic random access memory which is a memory cell array including a magnetoresistive effect element having a fixed layer whose magnetization direction is fixed, a recording layer whose magnetization direction is reversible, and a non-magnetic layer provided between the fixed layer and the recording layer, wherein all conductive layers in the memory cell array arranged below the magnetoresistive effect element are formed of materials each containing an element selected from a group including W, Mo, Ta, Ti, Zr, Nb, Cr, Hf, V, Co, and Ni.

摘要翻译： 一种磁性随机存取存储器，其是包括具有固定磁化方向的固定层的磁阻效应元件，其磁化方向可逆的记录层和设置在固定层与记录层之间的非磁性层的存储单元阵列 其中，布置在磁阻效应元件下方的存储单元阵列中的所有导电层由各自含有选自包括W，Mo，Ta，Ti，Zr，Nb，Cr，Hf，V，Co和 倪

公开(公告)号：US06984865B2

公开(公告)日：2006-01-10

申请号：US10847384

申请日：2004-05-18

申请人： Takeshi Kajiyama ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Hisanori Aikawa ,  Masatoshi Yoshikawa ,  Yoshiaki Asao ,  Hiroaki Yoda

发明人： Takeshi Kajiyama ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Hisanori Aikawa ,  Masatoshi Yoshikawa ,  Yoshiaki Asao ,  Hiroaki Yoda

IPC分类号： H01L29/82

CPC分类号： G11C11/16 ,  B82Y10/00 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

摘要： A magnetic random access memory concerning an example of the present invention comprises a magneto resistive element, a first insulating layer which covers side surfaces of the magneto resistive element, a second insulating layer which is arranged on the first insulating layer and has a first groove on the magneto resistive element, a write line which fills the first groove and is connected with the magneto resistive element, and a third insulating layer which is arranged between the first and second insulating layers except a bottom portion of the first groove and has an etching selection ratio with respect to at least the first and second insulating layers.

摘要翻译： 关于本发明的实例的磁性随机存取存储器包括磁阻元件，覆盖磁阻元件的侧表面的第一绝缘层，布置在第一绝缘层上并具有第一凹槽的第二绝缘层 磁阻元件，填充第一沟槽并与磁阻元件连接的写入线以及布置在除了第一沟槽的底部之外的第一和第二绝缘层之间的第三绝缘层，并且具有蚀刻选择 至少相对于第一绝缘层和第二绝缘层。

公开(公告)号：US06947314B2

公开(公告)日：2005-09-20

申请号：US10671743

申请日：2003-09-29

申请人： Hiroaki Yoda ,  Hisanori Aikawa ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Takeshi Kajiyama ,  Yoshiaki Asao

发明人： Hiroaki Yoda ,  Hisanori Aikawa ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Takeshi Kajiyama ,  Yoshiaki Asao

IPC分类号： H01L27/105 ,  G11C11/15 ,  H01L21/8246 ,  H01L43/08 ,  G11C11/00

CPC分类号： H01L43/12 ,  G11C11/15

摘要： A write wiring for writing information in an MTJ device is covered with a magnetic layer. The magnetic layer has a structure in which the growing direction of columnar grains is 30° or less from the normal-line direction of sidewalls, a structure in which grains are deposited like a layer, or a structure in which grains are amorphously deposited.

摘要翻译： 用于在MTJ设备中写入信息的写入线覆盖有磁性层。 磁性层具有其中柱状晶体的生长方向从侧壁的法线方向为30°以下的结构，其中晶粒沉积成层的结构或其中晶粒被非晶态沉积的结构。

公开(公告)号：US07920412B2

公开(公告)日：2011-04-05

申请号：US12605072

申请日：2009-10-23

申请人： Keiji Hosotani ,  Yoshiaki Asao ,  Akihiro Nitayama

发明人： Keiji Hosotani ,  Yoshiaki Asao ,  Akihiro Nitayama

IPC分类号： G11C11/00

CPC分类号： H01L27/228 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

摘要： A magnetic random access memory includes a first wiring, a second wiring formed above and spaced apart from the first wiring, a magnetoresistive effect element formed between the first wiring and the second wiring, formed in contact with an upper surface of the first wiring, and having a fixed layer, a recording layer, and a nonmagnetic layer formed between the fixed layer and the recording layer, a metal layer formed on the magnetoresistive effect element and integrated with the magnetoresistive effect element to form stacked layers, a first side insulating film formed on side surfaces of the metal layer, the magnetoresistive effect element, and the first wiring, a first contact formed in contact with a side surface of the first side insulating film, and a third wiring formed on the metal layer and the first contact to electrically connect the magnetoresistive effect element and the first contact.

摘要翻译： 磁性随机存取存储器包括第一布线，形成在第一布线上方并与第一布线间隔开的第二布线;形成在与第一布线的上表面接触形成的第一布线和第二布线之间的磁阻效应元件，以及 具有形成在固定层和记录层之间的固定层，记录层和非磁性层，形成在磁阻效应元件上并与磁阻效应元件集成以形成堆叠层的金属层，形成第一侧绝缘膜 在金属层的侧表面，磁阻效应元件和第一布线，与第一侧绝缘膜的侧表面接触形成的第一触点和形成在金属层上的第三布线和第一触点电连接 连接磁阻效应元件和第一触点。

公开(公告)号：US07916522B2

公开(公告)日：2011-03-29

申请号：US12400262

申请日：2009-03-09

申请人： Kiyotaro Itagaki ,  Tsuneo Inaba ,  Yoshihiro Ueda ,  Yoshiaki Asao

发明人： Kiyotaro Itagaki ,  Tsuneo Inaba ,  Yoshihiro Ueda ,  Yoshiaki Asao

IPC分类号： G11C11/15

CPC分类号： G11C11/5607 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/003 ,  G11C13/0061 ,  G11C13/0069 ,  G11C2013/0078 ,  G11C2013/0092 ,  G11C2213/75 ,  G11C2213/78

摘要： A semiconductor memory device includes n resistance change elements which are arranged in one cell, have a low-resistance state and a high resistance state, are connected in series or parallel, have different resistance values in the same resistance state, and change between the low-resistance state and the high-resistance state under different conditions, and a write circuit which is connected to one end of the n resistance change elements, and applies a pulse current m (1≦m≦n) times to the n resistance change elements during a write operation. Letting Im be a current value of an mth pulse current, condition I1>I2> . . . >Im holds.

摘要翻译： 半导体存储器件包括在一个单元中布置的具有低电阻状态和高电阻状态的n个电阻变化元件串联或并联连接，在相同电阻状态下具有不同的电阻值，并且在低电平 电阻状态和不同条件下的高电阻状态，以及与n个电阻变化元件的一端连接的写入电路，并向n个电阻变化元件施加脉冲电流m（1＆nlE; m＆nlE; n）次 在写操作期间。 令Im为第m个脉冲电流的当前值，条件I1> I2>。 。 。 > Im持有。

公开(公告)号：US07869259B2

公开(公告)日：2011-01-11

申请号：US12406898

申请日：2009-03-18

申请人： Yoshiaki Asao

发明人： Yoshiaki Asao

IPC分类号： G11C11/00

CPC分类号： G11C13/0069 ,  G11C13/0002 ,  G11C13/0097 ,  G11C16/0466 ,  G11C2013/0078 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625 ,  H01L45/1641 ,  H01L45/165

摘要： A resistance change memory includes a first interconnection, a second interconnection, a first resistance change element which has a first electrode, a second electrode, and a first tunnel insulating film provided between the first electrode and the second electrode, the first tunnel insulating film including a first trap region formed by introducing defects to trap holes or electrons, and the second electrode being connected to the first interconnection, and a first transistor whose current path has one end connected to the first electrode and the other end connected to the second interconnection.

摘要翻译： 电阻变化存储器包括第一互连，第二互连，第一电阻改变元件，其具有设置在第一电极和第二电极之间的第一电极，第二电极和第一隧道绝缘膜，第一隧道绝缘膜包括 通过引入缺陷以捕获空穴或电子而形成的第一陷阱区域，以及第二电极连接到第一互连件，以及第一晶体管，其电流通路的一端连接到第一电极，而另一端连接到第二互连。