公开(公告)号：US20090085173A1

公开(公告)日：2009-04-02

申请号：US12056356

申请日：2008-03-27

申请人： Juergen Boemmels ,  Frank Feustel ,  Ralf Richter

发明人： Juergen Boemmels ,  Frank Feustel ,  Ralf Richter

IPC分类号： H01L23/58 ,  H01L21/311 ,  H01L21/44

CPC分类号： H01L23/53295 ,  H01L21/76814 ,  H01L21/76831 ,  H01L21/76843 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： The present disclosure generally relates to forming a metallization layer in a semiconductor device. In particular, this disclosure concerns the damascene inlay technique in low-k dielectric layers. Etching trenches and vias in low-k dielectric materials leads to uneven and porous sidewalls of the trenches and vias due to the porous nature of the low-k dielectric materials. Thus, smooth and dense sidewalls cannot be achieved, which is a prerequisite for an effective barrier layer, which prevents copper from being diffused into the low-k dielectric material. As a consequence, process tolerances are high and the reliability of the semiconductor device is reduced. The present disclosure overcomes these drawbacks by a surface treatment of the sidewalls of trenches and vias in order to densify the surface such that the following barrier layer may more effectively prevent copper from diffusing into the low-k or ultra high-k dielectric material.

摘要翻译： 本公开一般涉及在半导体器件中形成金属化层。 特别地，本公开涉及在低k电介质层中的镶嵌技术。 由于低k介电材料的多孔性质，低k电介质材料中的蚀刻沟槽和通孔导致沟槽和通孔的不均匀和多孔的侧壁。 因此，不能实现平滑和致密的侧壁，这是有效阻挡层的先决条件，其阻止铜扩散到低k电介质材料中。 因此，工艺公差高，半导体器件的可靠性降低。 本公开通过沟槽和通孔的侧壁的表面处理克服了这些缺点，以便使表面致密化，使得后续阻挡层可以更有效地防止铜扩散到低k或超高k电介质材料中。

公开(公告)号：US20080265426A1

公开(公告)日：2008-10-30

申请号：US11943820

申请日：2007-11-21

申请人： Robert Seidel ,  Ralf Richter ,  Frank Feustel

发明人： Robert Seidel ,  Ralf Richter ,  Frank Feustel

IPC分类号： H01L23/52 ,  H01L21/4763

CPC分类号： H01L21/7684 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76885

摘要： A method of forming a semiconductor structure comprises providing a substrate comprising a layer of a first material. A protection layer is formed over the layer of first material. At least one opening is formed in the layer of first material and the protection layer. A layer of a second material is formed over the layer of first material and the protection layer to fill the opening with the second material. A planarization process is performed to remove portions of the layer of second material outside the opening. At least a portion of the protection layer is not removed during the planarization process. An etching process is performed to remove the portions of the protection layer which were not removed during the planarization process.

摘要翻译： 一种形成半导体结构的方法包括提供包括第一材料层的衬底。 在第一材料层上形成保护层。 在第一材料层和保护层中形成至少一个开口。 在第一材料层上形成第二材料层，并且保护层用第二材料填充开口。 执行平面化处理以去除开口外部的第二材料层的部分。 在平坦化处理期间，保护层的至少一部分不被去除。 执行蚀刻处理以去除在平坦化处理期间未被去除的保护层的部分。

公开(公告)号：US20080203487A1

公开(公告)日：2008-08-28

申请号：US11873547

申请日：2007-10-17

申请人： Joerg Hohage ,  Michael Finken ,  Christof Streck ,  Ralf Richter

发明人： Joerg Hohage ,  Michael Finken ,  Christof Streck ,  Ralf Richter

IPC分类号： H01L21/469 ,  H01L29/78

CPC分类号： H01L21/76801 ,  H01L21/76825 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/823807 ,  H01L29/7833 ,  H01L29/7843

摘要： By providing a highly stressed interlayer dielectric material, the performance of at least one type of transistor may be increased due to an enhanced strain-inducing mechanism. For instance, by providing a highly compressive silicon dioxide of approximately 400 Mega Pascal and more as an interlayer dielectric material, the drive current of the P-channel transistors may be increased by 2% and more while not unduly affecting the performance of the N-channel transistors.

摘要翻译： 通过提供高度应力的层间介电材料，由于增强的应变诱导机制，至少一种类型的晶体管的性能可能会增加。 例如，通过提供大约400兆帕以上的高度压缩二氧化硅作为层间电介质材料，P沟道晶体管的驱动电流可以增加2％以上，而不会不适当地影响N- 通道晶体管。

公开(公告)号：US20080078738A1

公开(公告)日：2008-04-03

申请号：US11733350

申请日：2007-04-10

申请人： Ralf Richter ,  Joerg Hohage ,  Martin Mazur

发明人： Ralf Richter ,  Joerg Hohage ,  Martin Mazur

IPC分类号： H01B13/00

CPC分类号： H01L21/76814 ,  H01L21/02063 ,  H01L21/31144 ,  H01L21/76802

摘要： By incorporating a material exhibiting a high adhesion on chamber walls of a process chamber during sputter etching, the defect rate in a patterning sequence on the basis of an ARC layer may be significantly reduced, since the adhesion material may be reliably exposed during a sputter preclean process. The corresponding adhesion layer may be positioned within the ARC layer stack so as to be reliably consumed, at least partially, while nevertheless providing the required optical characteristics. Hence, a low defect rate in combination with a high process efficiency may be achieved.

摘要翻译： 通过在溅射蚀刻期间结合在处理室的室壁上表现出高粘附性的材料，可以显着地减少基于ARC层的图案化顺序中的缺陷率，因为粘合材料可以在溅射预清洗期间可靠地暴露 处理。 相应的粘合层可以定位在ARC层堆叠内，以便至少部分地可靠地消耗，同时仍然提供所需的光学特性。 因此，可以实现低缺陷率与高工艺效率的组合。

公开(公告)号：US07084300B2

公开(公告)日：2006-08-01

申请号：US10411277

申请日：2003-04-11

申请人： Juergen Herwig ,  Ralf Richter ,  Martin Roos ,  Georg Oenbrink

发明人： Juergen Herwig ,  Ralf Richter ,  Martin Roos ,  Georg Oenbrink

IPC分类号： C07C51/16 ,  C07C51/27 ,  C07C51/42 ,  C07C51/245

CPC分类号： C07C51/41 ,  C07C51/316 ,  C07C51/42 ,  C07C55/02 ,  C07C55/21

摘要： Degradation acids obtained in the synthesis of carboxylic acids, in particular dicarboxylic acids, having from 8 to 16 carbon atoms may be isolated by separating the degradation acids in the form of a solid from the crude reaction mixture, then washing the degradation acids in the form of an oil with water at an elevated temperature. The resulting degradation acids having low oxidant and metal contents, and the metal catalyst may be recirculated back to the process.

公开(公告)号：US20050040782A1

公开(公告)日：2005-02-24

申请号：US10938606

申请日：2004-09-13

申请人： Richard Jasinski ,  Ralf Richter

发明人： Richard Jasinski ,  Ralf Richter

IPC分类号： B60H1/00 ,  B60L1/02 ,  G05B5/00 ,  H02K23/66 ,  H02P20060101 ,  H02P1/00

CPC分类号： B60H1/00835 ,  B60L1/02 ,  H02K23/66 ,  Y02T10/641

摘要： A motor actuator of a climate control system includes an specialized electric motor with a motor housing enclosing an encoder ring on a motor shaft having a plurality of opposite encoder-segment sets with encoder brushes on the housing wiping the encoder ring and thereby forming an encoder circuit through opposite segments of the encoder-segment sets. The electric motor further includes power and encoder terminals positioned externally of the motor housing with at least one power terminal being electrically coupled to one of the power brushes and at least one encoder terminal being electrically coupled to one of the encoder brushes. A control head of the system includes a continuity pulse counter coupled to the at least one encoder terminal for creating pulses representative of impedance in the encoder circuit and, therefore, movement of the motor shaft and a damper linked thereto.

摘要翻译： 气候控制系统的电动机执行器包括专用电动机，其具有电动机壳体，该电动机壳体在电动机轴上包围编码器环，该电动机轴具有多个相对的编码器段组，其中编码器电刷在壳体上擦拭编码器环，从而形成编码器电路 通过编码器段组的相反段。 电动机还包括位于电动机壳体外部的动力和编码器端子，其中至少一个电力端子电耦合到电力电刷中的一个，并且至少一个编码器端子电耦合到编码器电刷之一。 该系统的控制头包括连接到至少一个编码器端子的连续脉冲计数器，用于产生代表编码器电路中的阻抗的脉冲，并因此产生与电动机轴和与之相连的阻尼器的运动。

公开(公告)号：US06726999B2

公开(公告)日：2004-04-27

申请号：US10024385

申请日：2001-12-21

申请人： Ralf Schueler ,  Heinz Peirick ,  Harald Haeger ,  Ralf Richter

发明人： Ralf Schueler ,  Heinz Peirick ,  Harald Haeger ,  Ralf Richter

IPC分类号： B32B2706

CPC分类号： C08L67/02 ,  Y10T428/31732 ,  Y10T428/31736 ,  Y10T428/31739 ,  C08L2666/20

摘要： A molding composition comprises from 80 to 99.9 parts by weight of thermoplastic polyester and from 0.1 to 20 parts by weight of a polyamide-polyamine graft copolymer, where the sum of the parts by weight of the polyester and of the graft copolymer is 100. The molding composition has improved flowability.

摘要翻译： 模塑组合物包含80-99.9重量份的热塑性聚酯和0.1-20重量份聚酰胺 - 聚胺接枝共聚物，其中聚酯和接枝共聚物的重量份数之和为100. 成型组合物具有改善的流动性。

公开(公告)号：US06677015B2

公开(公告)日：2004-01-13

申请号：US10021355

申请日：2001-12-19

申请人： Martin Himmelmann ,  Wilfried Bartz ,  Franz-Erich Baumann ,  Guido Schmitz ,  Georg Oenbrink ,  Harald Haeger ,  Ralf Richter

发明人： Martin Himmelmann ,  Wilfried Bartz ,  Franz-Erich Baumann ,  Guido Schmitz ,  Georg Oenbrink ,  Harald Haeger ,  Ralf Richter

IPC分类号： B32B102

CPC分类号： C08G73/028 ,  C08L79/02 ,  Y10T428/1352 ,  Y10T428/31725 ,  Y10T428/31732

摘要： A molding composition of at least 50% by weight of a polyamine-polyamide copolymer obtained from 0.05 to 2.5% by weight of a polyamine having at least 4 nitrogen atoms and having a viscosity of at least 5 000 Pa•s at 250° C. and at a shear rate of 0.1 l/s, and having a viscosity ratio of at least 7 at 250° C., when the melt viscosities at shear rates of 0.1 l/s and 100 l/s are compared with one another, has high melt stiffness and is easy to cut, and performs well in blow molding.

摘要翻译： 一种至少50重量％的多胺 - 聚酰胺共聚物的模塑组合物，其由0.05至2.5重量％的具有至少4个氮原子并且在250℃下具有至少5 000Pa.s的粘度的多胺获得。 并且以0.1l / s的剪切速率，并且在250℃下具有至少7的粘度比，当在0.1l / s和100l / s的剪切速率下的熔体粘度相互比较时，具有 熔体刚度高，易切削，吹塑性能好。

公开(公告)号：US08759232B2

公开(公告)日：2014-06-24

申请号：US13588460

申请日：2012-08-17

申请人： Joerg Hohage ,  Hartmut Ruelke ,  Ralf Richter

发明人： Joerg Hohage ,  Hartmut Ruelke ,  Ralf Richter

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/76832 ,  C23C16/345 ,  C23C16/45523 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/76834 ,  H01L21/823807 ,  H01L29/665 ,  H01L29/7833 ,  H01L29/7843

摘要： The present disclosure provides manufacturing techniques and semiconductor devices in which performance of P-channel transistors may be enhanced on the basis of a stress mechanism that involves the deposition of a dielectric bi-layer system. Contrary to conventional strategies, an additional pre-treatment may be performed prior to the deposition of an adhesion layer in a plasma-free process atmosphere, thereby enabling a reduced thickness of the adhesion layer and a higher internal stress level of the subsequent top layer.

摘要翻译： 本公开提供了制造技术和半导体器件，其中可以基于涉及沉积介电双层系统的应力机制来增强P沟道晶体管的性能。 与常规策略相反，可以在粘附层在无等离子体的工艺气氛中沉积之前进行另外的预处理，从而能够减小粘合层的厚度和随后的顶层的更高的内应力水平。

公开(公告)号：US08741770B2

公开(公告)日：2014-06-03

申请号：US13468083

申请日：2012-05-10

申请人： Ralf Richter ,  Robert Seidel ,  Juergen Boemmels ,  Thomas Foltyn

发明人： Ralf Richter ,  Robert Seidel ,  Juergen Boemmels ,  Thomas Foltyn

IPC分类号： H01L23/48 ,  H01L21/4763

CPC分类号： H01L21/7681 ,  H01L21/76811 ,  H01L21/76816

摘要： Interlayer connections, i.e., vertical connections, may be formed on the basis of a hard mask material, which may be positioned below, within or above an interlayer dielectric material, wherein one lateral dimension is defined by a trench mask, thereby obtaining a desired interlayer connection in a common patterning process. Furthermore, the thickness of at least certain portions of the metal lines may be adjusted with a high degree of flexibility, thereby providing the possibility of significantly reducing the overall resistivity of metal lines in metal levels, in which device performance may significantly depend on resistivity rather than parasitic capacitance.

摘要翻译： 中间层连接（即垂直连接）可以基于硬掩模材料形成，硬掩模材料可以位于层间电介质材料的内部或之上，其中一个横向尺寸由沟槽掩模限定，从而获得所需的中间层 连接在共同的图案化过程中。 此外，金属线的至少某些部分的厚度可以以高度的柔性来调节，从而提供了显着降低金属线中金属线的整体电阻率的可能性，其中器件性能可能显着地取决于电阻率 比寄生电容。