公开(公告)号：US11791166B2

公开(公告)日：2023-10-17

申请号：US17532143

申请日：2021-11-22

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Qi Zhang ,  Haichun Yang ,  Hua Chung ,  Ting Xie ,  Michael X. Yang

IPC: H01L21/3213 ,  H01L21/311 ,  H01L21/3065

CPC classification number: H01L21/32136 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32135

Abstract: Systems and methods for etching titanium containing layers on a workpiece are provided. In one example, a method includes placing the workpiece on a workpiece support in a processing chamber. The workpiece includes a first layer and a second layer. The first layer is a titanium containing layer. The method includes admitting a process gas into the processing chamber. The process gas includes an ozone gas and a fluorine containing gas. The method includes exposing the first layer and the second layer on the workpiece to the process gas to at least partially etch the first layer at a greater etch rate relative to the second layer.

公开(公告)号：US11626269B2

公开(公告)日：2023-04-11

申请号：US17201081

申请日：2021-03-15

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Qi Zhang ,  Xinliang Lu ,  Hua Chung

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/311

Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include conducting a pre-treatment process on a processing chamber to generate a hydrogen radical affecting layer on a surface of the processing chamber prior to performing a hydrogen radical based surface treatment process on a workpiece in the processing chamber. In this manner, a pretreatment process can be conducted to condition a processing chamber to increase uniformity of hydrogen radical exposure to a workpiece.

公开(公告)号：US11462413B2

公开(公告)日：2022-10-04

申请号：US16930392

申请日：2020-07-16

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Shanyu Wang ,  Chun Yan ,  Hua Chung ,  Michael X. Yang ,  Tsai Wen Sung ,  Qi Zhang

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/311

Abstract: Apparatus, systems, and methods for conducting an etch removal process on a workpiece are provided. The method can include generating a plasma from a deposition process gas in a plasma chamber using a plasma source to deposit a passivation layer on certain layers of a high aspect ratio structure. The method can include generating a plasma from an etch process gas in a plasma chamber using a plasma source to remove certain layers from the high aspect ratio structure. The method can include removing silicon nitride layers at a faster etch rate than silicon dioxide layers on the high aspect ratio structure.

公开(公告)号：US11387111B2

公开(公告)日：2022-07-12

申请号：US16379912

申请日：2019-04-10

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Michael X. Yang ,  Hua Chung ,  Xinliang Lu

IPC: H01L21/67 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/02 ,  H01L21/3065 ,  H01J37/32 ,  C23C14/34

Abstract: Methods for material removal of a film, such as a metal nitride film, from a workpiece are provided. One example implementation is directed to a method for processing a workpiece. The workpiece can include a film (e.g., a metal nitride film). The method can include generating one or more species (e.g., hydrogen radicals, excited inert gas molecules, etc.). The method can include mixing alkyl halide with the one or more species to generate one or more alkyl radicals. The method can include exposing the film to the one or more alkyl radicals.

公开(公告)号：US20220084839A1

公开(公告)日：2022-03-17

申请号：US17532143

申请日：2021-11-22

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Qi Zhang ,  Haichun Yang ,  Hua Chung ,  Ting Xie ,  Michael X. Yang

IPC: H01L21/3213 ,  H01L21/311 ,  H01L21/3065

Abstract: Systems and methods for etching titanium containing layers on a workpiece are provided. In one example, a method includes placing the workpiece on a workpiece support in a processing chamber. The workpiece includes a first layer and a second layer. The first layer is a titanium containing layer. The method includes admitting a process gas into the processing chamber. The process gas includes an ozone gas and a fluorine containing gas. The method includes exposing the first layer and the second layer on the workpiece to the process gas to at least partially etch the first layer at a greater etch rate relative to the second layer.

公开(公告)号：US11195718B2

公开(公告)日：2021-12-07

申请号：US16916849

申请日：2020-06-30

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Tsai Wen Sung ,  Chun Yan ,  Hua Chung ,  Michael X. Yang ,  Dixit V. Desai ,  Peter J. Lembesis

IPC: H01L21/033 ,  H01L21/311

Abstract: Systems and methods for processing a workpiece are provided. In one example, a method includes placing a workpiece on a workpiece support in a processing chamber. The method includes performing a spacer treatment process to expose the workpiece to species generated from a first process gas in a first plasma to perform a spacer treatment process on a spacer layer on the workpiece. The first plasma can be generated in the processing chamber. After performing the spacer treatment process, the method can include performing a spacer etch process to expose the workpiece to neutral radicals generated from a second process gas in a second plasma to etch at least a portion of the spacer layer on the workpiece. The second plasma can be generated in a plasma chamber that is remote from the processing chamber.

公开(公告)号：US11183397B2

公开(公告)日：2021-11-23

申请号：US17071293

申请日：2020-10-15

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Qi Zhang ,  Haichun Yang ,  Hua Chung ,  Ting Xie ,  Michael X. Yang

IPC: H01L21/3213 ,  H01L21/311 ,  H01L21/3065

Abstract: Systems and methods for etching titanium containing layers on a workpiece are provided. In one example, a method includes placing the workpiece on a workpiece support in a processing chamber. The workpiece includes a first layer and a second layer. The first layer is a titanium containing layer. The method includes admitting a process gas into the processing chamber. The process gas includes an ozone gas and a fluorine containing gas. The method includes exposing the first layer and the second layer on the workpiece to the process gas to at least partially etch the first layer at a greater etch rate relative to the second layer.

公开(公告)号：US20210307151A1

公开(公告)日：2021-09-30

申请号：US17346754

申请日：2021-06-14

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Shuang Meng ,  Xinliang Lu ,  Shawming Ma ,  Hua Chung

IPC: H05H1/00 ,  G01N21/00 ,  H01J37/32

Abstract: Plasma processing apparatus and associated methods for detecting air leak are provided. In one example implementation, the plasma processing apparatus can include a processing chamber to process a workpiece, a plasma chamber separated from the processing chamber by a separation grid, and an inductive coupling element to induce an oxygen plasma using a process gas in the plasma chamber. The plasma processing apparatus can detect afterglow emission strength from reaction between nitric oxide (NO) and oxygen radical(s) in a process space downstream to an oxygen plasma to measure nitrogen concentrations due to presence of air leak.

公开(公告)号：US11062910B2

公开(公告)日：2021-07-13

申请号：US16444146

申请日：2019-06-18

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Michael X. Yang ,  Hua Chung ,  Xinliang Lu

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/30 ,  C23C16/452 ,  H01L21/311 ,  H01L21/3213 ,  B01D67/00 ,  C23F1/12 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/02 ,  H01J37/32 ,  H01L21/027 ,  H01L21/768 ,  C23F4/00

Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include performing an organic radical based surface treatment process on a workpiece. The organic radical based surface treatment process can include generating one or more species in a first chamber. The surface treatment process can include mixing one or more hydrocarbon molecules with the species to create a mixture. The mixture can include one or more organic radicals. The surface treatment process can include exposing a semiconductor material on the workpiece to the mixture in a second chamber.

公开(公告)号：US20210066088A1

公开(公告)日：2021-03-04

申请号：US16904669

申请日：2020-06-18

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Qi Zhang ,  Xinliang Lu ,  Hua Chung ,  Haichun Yang

IPC: H01L21/311 ,  H01L21/02

Abstract: Systems and methods for processing a workpiece are provided. In one example, a method includes exposing the workpiece to a first gas mixture when the workpiece is at a first temperature to conduct a doped silicate glass etch process. The first gas mixture can include hydrofluoric acid (HF) vapor. The doped silicate glass etch process at least partially removes the doped silicate glass layer at a first etch rate that is greater than a second etch rate associated with removal of the at least one second layer. The method can include heating the workpiece to a second temperature. The second temperature is greater than the first temperature. The method can include exposing the workpiece to a second gas mixture when the workpiece is at a second temperature to remove a residue from the workpiece.